IXFN32N60 [IXYS]
HiPerFET Power MOSFET; HiPerFET功率MOSFET
| 型号： | IXFN32N60 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFET |
| 文件： | 总4页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXFK 32N60 IXFN 32N60
IXFK 36N60 IXFN 36N60
Preliminary Data
VDSS ID25 RDS(on)
trr
IXFK/FN 36N60 600V 36A 0.18Ω 250ns
IXFK/FN 32N60 600V 32A 0.25Ω 250ns
HiPerFETTMPower MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
TO-264 AA (IXFK)
Symbol
TestConditions
Maximum Ratings
IXFK IXFN
VDSS
VDGR
TJ = 25°C to 150°C
600
600
600
600
V
V
G
TJ = 25°C to 150°C; RGS = 1 MΩ
D (TAB)
D
S
VGS
Continuous
Transient
±20
±30
±20
±30
V
V
VGSM
miniBLOC, SOT-227 B (IXFN)
E153432
ID25
IDM
TC = 25°C, Chip capability
32N60 32
36N60 36
32
36
128
144
20
A
A
A
A
A
S
G
TC = 25°C, pulse width limited by TJM 32N60 128
36N60 144
IAR
TC = 25°C
TC = 25°C
20
30
5
S
D
EAR
dv/dt
30
5
mJ
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC
can be used as Main or Kelvin Source
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
V/ns
PD
TC = 25°C
500
520
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
• International standard packages
• JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
-55 ... +150
TL
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMSt = 1 min
300
-
°C
VISOL
-
-
2500
3000
V~
V~
IISOL ≤ 1 mAt = 1 s
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
Md
Mounting torque
Terminal connection torque
0.9/6 1.5/13 Nm/lb.in.
- 1.5/13 Nm/lb.in.
Weight
10
30
g
• Low package inductance
• Fast intrinsic Rectifier
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
600
2
V
V
VGH(th)
4.5
• Temperature and lighting controls
• Low voltage relays
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
400 µA
2
mA
Advantages
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 32N60
36N60
0.18
0.25
Ω
Ω
92807G(01/96)
©1996IXYSCorporation. All rightsreserved.
IXYSCorporation
IXYSSemiconductor
3540 Bassett Street, Santa Clara,CA 95054
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: 408-982-0700
Fax: 408-496-0670
Tel: +49-6206-5030
Fax: +49-6206-503629
IXFK 32N60 IXFN 32N60
IXFK 36N60 IXFN 36N60
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-264 AA Outline
Symbol
gfs
TestConditions
VDS = 10 V; ID = 0.5 ID25, pulse test
36
S
Ciss
Coss
Crss
9000
840
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
280
td(on)
tr
td(off)
tf
30
45
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1 Ω (External),
100
60
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Qg(on)
Qgs
325
60
nC
nC
nC
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
Qgd
120
D
E
e
J
25.91 26.16
19.81 19.96
5.46 BSC
RthJC
RthCK
TO-264 AA
TO-264 AA
0.25 K/W
K/W
.215 BSC
0.00
0.00
0.25
0.25
.000
.000
.010
.010
0.15
0.05
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
RthJC
RthCK
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.24 K/W
K/W
P
Q
Q1
3.17
6.07
8.38
3.66
6.27
8.69
.125
.239
.330
.144
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
miniBLOC, SOT-227 B
Symbol
TestConditions
IS
IS
VGS = 0
VGS = 0
36N60
32N60
36
32
A
A
ISM
Repetitive; pulse width limited by TJM
36N60
32N60
144
128
A
A
VSD
IF = IS A, VGS = 0 V,
1.5
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IRM
250
ns
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V
20
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFK 32N60 IXFN 32N60
IXFK 36N60 IXFN 36N60
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSCorporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700
IXYSSemiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
Fax: 408-496-0670
IXFK 32N60 IXFN 32N60
IXFK 36N60 IXFN 36N60
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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