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IXFN340N07_04 [IXYS]

HiPerFET⑩ Power MOSFETs Single Die MOSFET; HiPerFET⑩功率MOSFET的单芯片MOSFET
IXFN340N07_04
型号： IXFN340N07_04
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerFET⑩ Power MOSFETs Single Die MOSFET
HiPerFET⑩功率MOSFET的单芯片MOSFET
文件： 总5页 (文件大小：103K)
中文：  中文翻译
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HiPerFETTM  
IXFN 340N07  
VDSS = 70 V  
Power MOSFETs  
Single Die MOSFET  
ID25  
RDS(on)  
= 340 A  
4 mΩ  
≤ 200 ns  
=
D
trr  
N-ChannelEnhancementMode  
AvalancheRated, Highdv/dt, Lowtrr  
G
S
S
Symbol  
TestConditions  
Maximum Ratings  
miniBLOC,SOT-227B(IXFN)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
70  
70  
V
V
S
G
VGS  
Continuous  
Transient  
20  
30  
V
V
VGSM  
S
ID25  
IL(RMS)  
IDM  
TC = 25°C, Chip capability  
Terminal current limit  
340  
100  
A
A
A
A
D
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
1360  
200  
IAR  
G = Gate  
D = Drain  
S = Source  
EAR  
TC = 25°C  
TC = 25°C  
64  
4
mJ  
J
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
EAS  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
10  
V/ns  
PD  
TC = 25°C  
700  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• International standard package  
• miniBLOC, withAluminiumnitride  
isolation  
TJM  
Tstg  
-55 ... +150  
• Low RDS (on) HDMOSTM process  
• Ruggedpolysilicongatecellstructure  
• UnclampedInductiveSwitching(UIS)  
rated  
• Lowpackageinductance  
• Fast intrinsic Rectifier  
VISOL  
50/60 Hz, RMS  
IISOL ≤ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Md  
Mounting torque  
Terminal connection torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Weight  
30  
g
Applications  
Symbol  
TestConditions  
Characteristic Values  
• DC-DC converters  
• Batterychargers  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• Switched-modeandresonant-mode  
VDSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
70  
V
V
power supplies  
VGH(th)  
2.0  
4.0  
• DC choppers  
• Temperature and lighting controls  
• Linear current regulators  
IGSS  
IDSS  
VGS = 20 VDC, VDS = 0  
200 nA  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 μA  
2
mA  
Advantages  
RDS(on)  
VGS = 10 V, I = 100A  
Pulse test, t ≤D300 μs,  
duty cycle d ≤ 2 %  
4
mΩ  
• Easy to mount  
• Space savings  
• High power density  
© 2004 IXYS All rights reserved  
DS98547D(05/04)  
IXFN 340N07  
Symbol  
gfs  
TestConditions  
Characteristic Values  
miniBLOC, SOT-227 B  
(TJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
VDS = 10 V; ID = 60A, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
80  
98  
S
Ciss  
Coss  
Crss  
12200  
pF  
pF  
pF  
7100  
3340  
td(on)  
tr  
td(off)  
tf  
100  
95  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 100A  
M4 screws (4x) supplied  
RG = 1 Ω (External)  
200  
33  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
Qg(on)  
Qgs  
490  
72  
nC  
nC  
nC  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
VGS = 10 V, VDS = 50 V, ID = 100A  
E
F
4.09  
14.91  
4.29  
15.11  
0.161  
0.587  
0.169  
0.595  
Qgd  
266  
G
H
30.12  
38.00  
30.30  
38.23  
1.186  
1.496  
1.193  
1.505  
RthJC  
RthCK  
0.18 K/W  
K/W  
J
K
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
0.05  
L
M
0.76  
12.60  
0.84  
12.85  
0.030  
0.496  
0.033  
0.506  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
Q
4.95  
26.54  
5.97  
26.90  
0.195  
1.045  
0.235  
1.059  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
T
U
24.59  
-0.05  
25.07  
0.1  
0.968  
-0.002  
0.987  
0.004  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
340  
1360  
1.2  
A
A
V
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = 100A, VGS = 0 V,  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
trr  
QRM  
IRM  
IF = 50A, -di/dt = 100 A/μs, VR = 50V TJ = 25°C  
100  
1.4  
8
200 ns  
μC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508 5,049,961  
5,034,796 5,063,307  
5,187,117  
5,237,481  
5,381,025 6,162,665  
6,306,728 B1 6,534,343  
6,683,344  
6,710,405B2  
5,486,715  
6,259,123B1 6,404,065B1 6,583,505  
IXFN 340N07  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Output Characteristics  
@ 125 Deg. C  
240  
200  
160  
120  
80  
240  
200  
160  
120  
80  
VGS=10V  
VGS=10V  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
5V  
6V  
5V  
40  
40  
0
0
0
0.4  
0.8  
1.2  
1.6  
2
0
0.3  
0.6  
0.9  
1.2  
1.5  
VDS - Volts  
V
DS - Volts  
Fig. 3. Temperature Dependence of  
RDS(ON)  
Fig. 4. RDS(ON) Normalized to IL(RMS)  
Value vs. Junction Temperature  
5.5  
1.8  
1.6  
1.4  
1.2  
1
5
4.5  
4
ID=200A  
ID=100A  
3.5  
3
ID=200A  
ID=100A  
0.8  
0.6  
2.5  
2
-50 -25  
0
25  
50  
75 100 125 150  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees Centigrade  
TJ - Degrees Centigrade  
Fig. 6. Temperature dependence of  
Breakdown & Threshold Voltage  
Fig. 5. RDS(ON) Normalized to IL(RMS)  
Value vs. ID  
1.2  
1.1  
1
1.6  
TJ=125 C  
°
VGS(TH)  
BVDSS  
1.5  
1.4  
1.3  
1.2  
1.1  
1
0.9  
0.8  
0.7  
TJ=25 C  
°
0.9  
-50 -25  
0
25 50 75 100 125 150  
0
50  
100  
150  
200  
250  
TJ - Degrees Centigrade  
ID - Amperes  
© 2004 IXYS All rights reserved  
IXFN 340N07  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
180  
150  
120  
90  
250  
200  
150  
100  
50  
TJ=25  
°
T = -40 C  
°
J
25 C  
°
60  
125 C  
°
30  
0
0
2.5  
3
3.5  
4
4.5  
5
5.5  
6
0
40  
80  
120  
160  
200  
240  
VGS - Volts  
ID - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
-240  
-200  
-160  
-120  
-80  
10  
8
VDS=50V  
ID=100A  
IG=10mA  
6
T =125 C  
°
J
4
T =25 C  
°
J
2
-40  
0
0
0
100  
200  
300  
400  
500  
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1  
VSD - Volts  
QG - nanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Transient Thermal Resistance  
100000  
10000  
1000  
1
f=100kHz  
0.1  
Ciss  
Coss  
0.01  
0.001  
Crss  
1
10  
100  
1000  
0
10  
20  
30  
40  
VDS - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFN 340N07  
Fig. 13. Forward-Bias Safe  
Operating Area  
10,000  
1,000  
100  
TC = 25ºC  
TJ = 150ºC  
RDS(on) Limit  
100µs  
1ms  
10ms  
DC  
10  
10  
1
100  
VD S - Volts  
© 2004 IXYS All rights reserved  

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