IXFN340N07 [IXYS]
HiPerFET Power MOSFETs Single Die MOSFET; HiPerFET功率MOSFET的单芯片MOSFET
| 型号： | IXFN340N07 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Single Die MOSFET |
| 文件： | 总2页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
IXFN 340N07
VDSS = 70 V
Power MOSFETs
Single Die MOSFET
ID25
RDS(on)
= 340 A
= 4 mW
D
trr £ 250ns
N-ChannelEnhancementMode
AvalancheRated, Highdv/dt, Lowtrr
G
S
S
Symbol
TestConditions
Maximum Ratings
miniBLOC,SOT-227B(IXFN)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
70
70
V
V
S
TJ = 25°C to 150°C; RGS = 1 MW
G
VGS
Continuous
Transient
±20
±30
V
V
VGSM
S
ID25
IL(RMS)
IDM
TC = 25°C, Chip capability
Terminal current limit
340
100
A
A
A
A
D
TC = 25°C, pulse width limited by TJM
TC = 25°C
1360
200
IAR
G = Gate
D = Drain
S = Source
EAR
TC = 25°C
TC = 25°C
64
4
mJ
J
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
EAS
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
PD
TC = 25°C
700
W
Features
TJ
-55 ... +150
150
°C
°C
°C
Internationalstandardpackages
miniBLOC, withAluminiumnitride
isolation
TJM
Tstg
-55 ... +150
Low RDS (on) HDMOSTM process
Ruggedpolysilicongatecellstructure
UnclampedInductiveSwitching(UIS)
rated
Lowpackageinductance
FastintrinsicRectifier
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Md
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
DC-DC converters
Batterychargers
min. typ. max.
Switched-modeandresonant-mode
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
70
V
V
power supplies
VGH(th)
2.0
4.0
DC choppers
Temperatureandlightingcontrols
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
100 mA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
2
mA
Advantages
RDS(on)
VGS = 10 V, I = 100A
Pulse test, t £D300 ms,
duty cycle d £ 2 %
4
mW
Easy to mount
Space savings
High power density
© 2000 IXYS All rights reserved
98547B (10/00)
IXFN 340N07
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
miniBLOC, SOT-227 B
min.
typ. max.
VDS = 15 V; ID = 60A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
80
105
S
Ciss
Coss
Crss
16800
pF
pF
pF
8000
4800
td(on)
tr
td(off)
tf
140
95
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 100A
M4 screws (4x) supplied
RG = 1 W (External)
200
33
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
Qg(on)
Qgs
600
110
300
nC
nC
nC
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
VGS = 10 V, VDS = 50 V, ID = 100A
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
Qgd
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
RthJC
RthCK
0.18 K/W
K/W
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
0.05
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
340
1360
1.2
A
A
V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = 100A, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
IF = 50A, -di/dt = 100 A/ms, VR = 50V TJ = 25°C
250 ns
QRM
IRM
1.4
8
mC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXYS
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