IXFN280N07_08 [IXYS]

HiPerFET Power MOSFETs Single Die MOSFET; HiPerFET功率MOSFET的单芯片MOSFET


型号：	IXFN280N07_08
厂家：	IXYS CORPORATION
描述：	HiPerFET Power MOSFETs Single Die MOSFET HiPerFET功率MOSFET的单芯片MOSFET
文件：	总4页 (文件大小：113K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFET^TM

Power MOSFETs

Single Die MOSFET

V_DSS= 70V

I_D25= 280A

R_DS(on)≤ 5mΩ

IXFN280N07

t_rr

≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated

High dV/dt, Low t_rr

miniBLOC, SOT-227 B (IXFN)

E153432

Symbol

V_DSS

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

Maximum Ratings

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

D = Drain

I_D25

T_C= 25°C

Terminal current limit

280

100

I_L(RMS)

I_DM

G = Gate

S = Source

T_C= 25°C, pulse width limited by T_JM

1120

I_AR

T_C= 25°C

180

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

E_AR

E_AS

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

Features

600

^zInternational standard package

^zminiBLOCwith Aluminium nitride

isolation

^zLow R_DS(on)HDMOS^TMprocess

^zRugged polysilicon gate cell structure

^zUnclamped inductive switching (UIS)

rated

^zLow package inductance

^zFast intrinsic Rectifier

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

1.6mm (0.062 in.) from case for 10s

300

°C

V_ISOL

50/60Hz, RMS

t = 1min

t = 1s

2500

3000

I_ISOL≤ 1mA

M_d

Mounting torque

Terminal connection torque

1.5/13

1.3/ 11.5

Nm/lb.in.

Advantages

Weight

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

^zDC-DC converters

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20V, V_DS= 0V

^zSynchronous rectification

^zBattery chargers

2.0

4.0

^zSwitched-mode and resonant-mode

power supplies

±200

^zDC choppers

I_DSS

V_DS= V_DSS

V_GS= 0V

100

μA

^zTemperature and lighting controls

^zLow voltage relays

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 120A, Note 1

mΩ

DS98555C(4/08)

IXFN280N07

Symbol

Test Conditions

Characteristic Values

SOT-227B Outline

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

g_fs

V_DS= 15V, I_D= 60A , Note 1

V_GS= 0V, V_DS= 25V, f = 1MHz

Gate input resistance

C_iss

C_oss

C_rss

11.5

4800

2650

R_Gi

0.74

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 90A

R_G= 1Ω (External)

Q_g(on)

Q_gs

360

V_GS= 10V, V_DS= 35V, I_D= 100A

Q_gd

182

R_thJC

R_thCS

0.22 °C/W

°C/W

0.05

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

I_S

V_GS= 0V

280

I_SM

V_SD

t_rr

Repetitive, pulse width limited by T_JM

I_F= 100A, V_GS= 0V, Note 1

1120

1.3

250

I_F= 50A, -di/dt = 100A/μs, V_R= 50V

Q_RM

I_RM

1.2

μC

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

IXFN280N07

Fig. 2. Output Characteristics

@ 125ºC

Fig. 1. Extended Output Characteristics

@ 25ºC

280

240

200

160

120

350

300

250

200

150

100

V_GS= 15V

10V

V_GS= 15V

10V

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V_DS- Volts

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= 140A Value

vs. Junction Temperature

Fig. 3. R_DS(on)Normalized to I_D= 140A Value

vs.Drain Current

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

V_GS= 10V

15V

- - - -

T_J= 125ºC

I _D= 280A

I _D= 140A

T_J= 25ºC

100

150

200

250

300

350

-50

-25

100

125

150

I_D- Amperes

T_J- Degrees Centigrade

Fig. 6. Forward Voltage Drop of

Intrinsic Diode

Fig. 5. Maximum Drain Current vs.

Case Temperature

120

110

100

330

300

270

240

210

180

150

120

External-Lead Current Limit

T_J= 125ºC

T_J= 25ºC

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

-50

-25

100

125

150

T_C- Degrees Centigrade

V_SD- Volts

IXFN280N07

Fig. 8. Transconductance

Fig. 7. Input Admittance

140

120

100

130

120

110

100

T_J= - 40ºC

25ºC

T_J= 125ºC

25ºC

- 40ºC

125ºC

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

100

120

140

160

180

V_GS- Volts

I_D- Amperes

Fig. 9. Capacitance

Fig. 10. Gate Charge

100,000

10,000

1,000

V_DS= 35V

_D= 100A

I _G= 10mA

= 1 MHz

iss

oss

rss

100

150

200

250

300

350

400

V_DS- Volts

Q_G- NanoCoulombs

Fig. 12. Maximum Transient Thermal

Impedance

Fig. 11. Forward-Bias Safe Operating Area

10,000

1,000

100

1.000

0.100

0.010

0.001

T_J= 150ºC

T_C= 25ºC

Single Pulse

100µs

25µs

1ms

R_DS(on)Limit

10ms

External-Lead Limit

100

0.0001

0.001

0.01

0.1

V_DS- Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

Pulse Width - Seconds

IXYS REF: F_280N07(9X)4-01-08

IXFN280N07_08 [IXYS]

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