IXFN300N10P [IXYS]
Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET
| 型号： | IXFN300N10P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar Power MOSFET HiPerFET |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
PolarTM Power MOSFET
VDSS = 100V
ID25 = 295A
RDS(on) ≤ 5.5mΩ
≤ 200ns
IXFN300N10P
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
trr
Fast Intrinsic Diode
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
100
100
V
V
miniBLOC, SOT-227 B
E153432
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
S
VGSS
VGSM
Continuous
Transient
±20
V
V
G
± 30
ID25
ILRMS
IDM
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
295
100
900
A
A
A
S
D
IA
TC = 25°C
TC = 25°C
100
3
A
J
G = Gate
S = Source
D = Drain
EAS
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
20
V/ns
W
1070
TJ
-55 ... +175
175
°C
°C
°C
Features
TJM
Tstg
• Fast intrinsic diode
-55 ... +175
• Avalanche Rated
• Low RDS(ON) and QG
TL
1.6mm (0.062 in.) from case for 10s
300
°C
• Low package inductance
z High current capability
z Isolation voltage 3000 V~
z International standard package
VISOL
50/60 Hz, RMS
t = 1min
2500
3000
V~
V~
IISOL ≤ 1mA
t = 1s
Md
Mounting torque
Terminal connection torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Advantages
Weight
30
g
z
Easy to mount
Space savings
High power density
Low gate drive requirement
z
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20V, VDS = 0V
100
V
V
Applications
3.0
5.0
±200
25
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
nA
IDSS
VDS = VDSS
VGS = 0V
μA
1.5 mA
TJ = 150°C
• AC and DC motor drives
• Uninterrupted power supplies
• High speed power switching
applications
RDS(on)
VGS = 10V, ID = 50A, Note 1
5.5 mΩ
DS100016(07/08)
© 2008 IXYS CORPORATION, All rights reserved
IXFN300N10P
Symbol
Test Conditions
Characteristic Values
SOT-227B Outline (IXFN)
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
55
92
S
Ciss
Coss
Crss
td(on)
tr
23
6100
417
36
nF
pF
pF
ns
ns
ns
ns
VGS = 0V, VDS = 25V, f = 1MHz
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
35
td(off)
tf
56
25
Qg(on)
Qgs
279
84
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 150A
Qgd
107
RthJC
RthCS
0.14 °C/W
°C/W
0.05
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
300
A
A
V
ISM
Repetitive, pulse width limited by TJM
IF = 100A, VGS = 0V, Note 1
1000
1.3
VSD
trr
QRM
IRM
200
ns
μC
A
IF = 150A, -di/dt = 100A/μs
0.71
10
VR = 50V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFN300N10P
Fig. 2. Output Characteristics
@ 150ºC
Fig. 1. Extended Output Characteristics
@ 25ºC
350
300
250
200
150
100
50
300
250
200
150
100
50
VGS = 15V
VGS = 15V
10V
9V
10V
9V
8V
7V
8V
7V
6V
5V
6V
0
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 150A Value
vs. Drain Current
Fig. 3. RDS(on) Normalized to ID = 150A Value
vs. Junction Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
TJ = 175ºC
I D = 300A
VGS = 10V
I D = 150A
15V - - - - -
TJ = 25ºC
0
50
100
150
200
250
300
350
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
200
180
160
140
120
100
80
120
110
100
90
80
70
60
50
40
30
20
10
0
External Lead Current Limit
TJ = 150ºC
25ºC
- 40ºC
60
40
20
0
-50
-25
0
25
50
75
100
125
150
175
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
VGS - Volts
TJ - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFN300N10P
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
Fig. . Transconductance
180
160
140
120
100
80
350
300
250
200
150
100
50
TJ = - 40ºC
25ºC
150ºC
TJ = 150ºC
60
40
TJ = 25ºC
20
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
20
40
60
80
100 120 140 160 180 200
ID - Amperes
VSD - Volts
Fig. 10. Capacitance
Fig. 9. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
100,000
10,000
1,000
100
= 1 MHz
f
VDS = 50V
C
I
I
D = 150A
G = 10mA
iss
C
oss
C
rss
0
40
80
120
160
200
240
280
0
5
10
15
20
25
30
35
40
QG - NanoCoulombs
VDS - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Forward-Bias Safe Operating Area
1,000
100
10
1.000
0.100
0.010
0.001
RDS(on) Limit
100µs
External Lead Limit
1ms
TJ = 175ºC
C = 25ºC
Single Pulse
10ms
100ms
100
T
DC
1
0.0001
0.001
0.01
0.1
1
10
1
10
1000
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_300N10P(9S) 7-22-08
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