IXFN30N120P [IXYS]
Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET
| 型号： | IXFN30N120P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar Power MOSFET HiPerFET |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM Power MOSFET
HiPerFETTM
VDSS = 1200V
ID25 = 30A
RDS(on) ≤ 350mΩ
≤ 300ns
IXFN30N120P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
trr
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
VDSS
Test Conditions
Maximum Ratings
S
TJ = 25°C to 150°C
1200
1200
V
V
G
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
S
ID25
IDM
TC = 25°C
30
75
A
A
D
D = Drain
TC = 25°C, pulse width limited by TJM
G = Gate
S = Source
IA
TC = 25°C
TC = 25°C
15
2
A
J
EAS
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
20
V/ns
W
890
Features
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
• International standard package
• Encapsulating epoxy meets
UL94V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
-55 ... +150
TL
1.6mm (0.062 in.) from case for 10s
300
°C
VISOL
50/60 Hz, RMS
t = 1min
2500
3000
V~
V~
• Fast recovery diode
• Unclamped Inductive Switching (UIS)
rated
IISOL ≤ 1mA
t = 1s
Md
Mounting torque
Terminal connection torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
• Low package inductance
- easy to drive and to protect
Weight
30
g
Advantages
• Easy to mount
• Space savings
• High power density
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 1mA
VGS = ± 30V, VDS = 0V
1200
3.5
V
V
z High Voltage Switched-mode and
resonant-mode power supplies
z High Voltage Pulse Power
Applications
6.5
± 300 nA
z High Voltage Discharge circuits in
Laser Pulsers, Spark Igniters, RF
Generators
z High Voltage DC-DC converters
z High Voltage DC-AC inverters
IDSS
VDS = VDSS
VGS = 0V
50 μA
5 mA
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
350 mΩ
DS99884A (4/08)
© 2008 IXYS CORPORATION, All rights reserved
IXFN30N120P
Symbol
Test Conditions
Characteristic Values
SOT-227B Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
13
22
S
RGi
Gate input resistance
1.70
Ω
Ciss
Coss
Crss
19
960
25
nF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
57
60
95
56
ns
ns
ns
ns
Qg(on)
Qgs
310
104
137
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.14 °C/W
°C/W
0.05
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
30
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
120
1.5
trr
300 ns
IF = 15A, -di/dt = 100A/μs
QRM
IRM
1.6
μC
VR = 100V
14
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFN30N120P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
30
27
24
21
18
15
12
9
65
60
55
50
45
40
35
30
25
20
15
10
5
VGS = 10V
9V
VGS = 10V
8V
8V
7V
6V
7V
6V
6
3
0
0
0
1
2
3
4
5
6
7
8
9
10
22
70
0
5
10
15
20
25
30
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 15A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
30
27
24
21
18
15
12
9
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
8V
VGS = 10V
7V
I D = 30A
I D = 15A
6V
5V
6
3
0
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 15A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
2.4
2.2
2
35
30
25
20
15
10
5
VGS = 10V
TJ = 125ºC
1.8
1.6
1.4
1.2
1
TJ = 25ºC
0.8
0
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100
125
ID - Amperes
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFN30N120P
Fig. 7. Input Admittance
Fig. 8. Transconductance
30
25
20
15
10
5
35
30
25
20
15
10
5
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
0
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
4.5
5
5.5
6
6.5
7
7.5
8
1.3
40
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
90
80
70
60
50
40
30
20
10
0
VDS = 600V
I D = 15A
I G = 10mA
TJ = 125ºC
6
TJ = 25ºC
4
2
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
50
100
150
200
250
300
350
400
450
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.000
0.100
0.010
0.001
f = 1 MHz
C
iss
C
oss
C
rss
10
0
5
10
15
20
25
30
35
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_30N120P(97) 4-01-08-C
相关型号：
©2020 ICPDF网 联系我们和版权申明