IXFN320N17T2 [IXYS]
GigaMOS TrenchT2 HiperFET Power MOSFET; GigaMOS TrenchT2 HiperFET功率MOSFET
| 型号： | IXFN320N17T2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GigaMOS TrenchT2 HiperFET Power MOSFET |
| 文件： | 总6页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
VDSS = 170V
ID25 = 260A
RDS(on) ≤ 5.2mΩ
IXFN320N17T2
trr
≤ 150ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
S
G
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
170
170
V
V
VDGR
S
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
D
ID25
TC = 25°C (Chip Capability)
260
A
G = Gate
D = Drain
S = Source
IL(RMS)
IDM
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
200
800
A
A
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
IA
TC = 25°C
TC = 25°C
100
5
A
J
EAS
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
20
V/ns
W
Features
1070
ꢀInternational Standard Package
ꢀminiBLOC, with Aluminium Nitride
Isolation
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
ꢀIsolation Voltage 2500 V~
ꢀHigh Current Handling Capability
ꢀFast Intrinsic Diode
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
VISOL
50/60 Hz, RMS
t = 1 minute
t = 1 second
2500
3000
V~
V~
ꢀAvalanche Rated
IISOL ≤ 1mA
ꢀ
Low RDS(on)
Md
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Advantages
Weight
30
g
ꢀ
Easy to Mount
Space Savings
High Power Density
ꢀ
ꢀ
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25°C, Unless Otherwise Specified)
Min.
170
2.5
Typ.
Max.
ꢀ
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
Synchronous Recification
ꢀDC-DC Converters
ꢀBattery Chargers
5.0
ꢀSwitched-Mode and Resonant-Mode
Power Supplies
±200 nA
IDSS
50 μA
5 mA
ꢀDC Choppers
TJ = 150°C
ꢀAC Motor Drives
ꢀUninterruptible Power Supplies
ꢀHigh Speed Power Switching
Applications
RDS(on)
VGS = 10V, ID = 60A, Note 1
5.2 mΩ
DS100189(09/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXFN320N17T2
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
120
190
S
Ciss
Coss
Crss
45
2890
410
nF
pF
pF
RGi
1.96
Ω
td(on)
tr
td(off)
tf
46
170
115
230
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
(M4 screws (4x) supplied)
Qg(on)
Qgs
640
185
175
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 160A
Qgd
RthJC
RthCS
0.14 °C/W
°C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
320
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
1280
1.25
150
trr
ns
μC
A
IF = 160A, -di/dt = 100A/μs
VR = 60V, VGS = 0V
QRM
IRM
0.53
9.00
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFN320N17T2
Fig. 1. Output Characteristics
@ TJ = 25ºC
Fig. 2. Extended Output Characteristics
@ TJ = 25ºC
320
280
240
200
160
120
80
400
350
300
250
200
150
100
50
VGS = 15V
VGS = 15V
10V
8V
7V
10V
7V
6V
6V
5.5V
5V
5.5V
5V
40
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
4
5
6
7
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ TJ = 150ºC
Fig. 4. RDS(on) Normalized to ID = 160A Value vs.
Junction Temperature
320
280
240
200
160
120
80
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 15V
VGS = 10V
10V
7V
I D = 320A
6V
I D = 160A
5V
4V
40
0
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 160A Value vs.
Drain Current
Fig. 6. Drain Current vs. Case Temperature
220
200
180
160
140
120
100
80
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 10V
External Lead Current Limit
TJ = 175ºC
60
TJ = 25ºC
40
20
0
-50
-25
0
25
50
75
100
125
150
175
0
50
100
150
200
250
300
350
400
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXFN320N17T2
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
180
160
140
120
100
80
400
350
300
250
200
150
100
50
TJ = - 40ºC
25ºC
150ºC
TJ = 150ºC
25ºC
60
- 40ºC
40
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
0
1
20
40
60
80
100
120
140
160
180
200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
400
350
300
250
200
150
100
50
VDS = 85V
I
I
D = 160A
G = 10mA
TJ = 150ºC
TJ = 25ºC
0
100
200
300
400
500
600
700
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000.0
100.0
10.0
1.0
100.0
10.0
1.0
R
Limit
DS(on)
25µs
C
iss
100µs
External Lead Limit
1ms
C
C
oss
10ms
T
T
= 175ºC
= 25ºC
J
100ms
DC
C
rss
= 1 MHz
5
f
Single Pulse
0.1
0.1
10
100
1,000
0
10
15
20
25
30
35
40
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_320N17T2(9V)9-02-09
IXFN320N17T2
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
380
340
300
260
220
180
140
100
360
320
280
240
200
160
120
80
RG = 1ꢀ , VGS = 10V
VDS = 85V
RG = 1Ω , VGS = 10V
VDS = 85V
I D = 200A
TJ = 125ºC
TJ = 25ºC
I D = 100A
40
0
40
60
80
100
120
140
160
180
200
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
700
600
500
400
300
200
100
0
220
700
600
500
400
300
200
100
240
t f
td(off) - - - -
t r
t
d(on) - - - -
TJ = 125ºC, VGS = 10V
DS = 85V
200
180
160
140
120
100
80
RG = 1Ω, VGS = 10V
200
160
120
80
VDS = 85V
V
I D = 200A
I D = 200A
I D = 100A
I D = 100A
40
0
25
35
45
55
65
75
85
95
105
115
125
1
2
3
4
5
6
7
8
9
10
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
700
600
500
400
300
200
100
0
220
200
180
160
140
120
100
80
t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
DS = 85V
I D = 200A
V
tf
t
d(off) - - - -
RG = 1ꢀ, VGS = 10V
DS = 85V
TJ = 125ºC
V
I D = 100A
TJ = 25ºC
1
2
3
4
5
6
7
8
9
10
40
60
80
100
120
ID - Amperes
140
160
180
200
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXFN320N17T2
Fig. 19. Maximium Transient Thermal Impedance
.sadgsfgsf
0.200
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_320N17T2(9V)9-02-09
相关型号：
©2020 ICPDF网 联系我们和版权申明