IXFN30N110P [IXYS]
Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET型号: | IXFN30N110P |
厂家: | IXYS CORPORATION |
描述: | Polar Power MOSFET HiPerFET |
文件: | 总4页 (文件大小:113K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PolarTM Power MOSFET
HiPerFETTM
VDSS = 1100V
ID25 = 25A
RDS(on) ≤ 360mΩ
≤ 300ns
IXFN30N110P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
trr
miniBLOC, SOT-227 B (IXFN)
E153432
S
Symbol
VDSS
Test Conditions
Maximum Ratings
G
TJ = 25°C to 150°C
1100
1100
V
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
S
D
D = Drain
ID25
IDM
TC = 25°C
25
75
A
A
G = Gate
S = Source
TC = 25°C, pulse width limited by TJM
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
IAR
TC = 25°C
TC = 25°C
15
A
J
EAS
1.5
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
20
V/ns
W
Features
695
• International standard package
• Encapsulating epoxy meets
UL94V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
• Fast recovery diode
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
TL
1.6mm (0.062 in.) from case for 10s
300
°C
VISOL
50/60 Hz, RMS
t = 1min
2500
3000
V~
V~
IISOL ≤ 1mA
t = 1s
Md
Mounting torque
Terminal connection torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Advantages
• Easy to mount
• Space savings
• High power density
Weight
30
g
Symbol
Test Conditions
Characteristic Values
Applications:
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
z High Voltage Switched-mode and
resonant-mode power supplies
z High Voltage Pulse Power Applications
z High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 1mA
VGS = ± 30V, VDS = 0V
1100
3.5
V
V
6.5
± 200 nA
z High Voltage DC-DC converters
z High Voltage DC-AC inverters
IDSS
VDS = VDSS
VGS = 0V
50 μA
2.5 mA
TJ = 125°C
RDS(on)
VGS = 10V, ID = 15A, Note 1
360 mΩ
DS99899A (04/08)
© 2008 IXYS CORPORATION, All rights reserved
IXFN30N110P
Symbol
Test Conditions
Characteristic Values
SOT-227B Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 15A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate input resistance
15
25
S
Ciss
Coss
Crss
13.6
795
70
nF
pF
pF
RGi
1.50
Ω
td(on)
tr
td(off)
tf
50
48
83
52
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 15A
RG = 1Ω (External)
Qg(on)
Qgs
235
102
79
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 15A
Qgd
RthJC
RthCS
0.18 °C/W
°C/W
0.05
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
30
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
120
1.5
trr
300 ns
IF = 20A, -di/dt = 100A/μs
QRM
IRM
1.8
μC
VR = 100V , VGS = 0V
13
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFN30N11 0P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
30
25
20
15
10
5
70
60
50
40
30
20
10
0
VGS = 10V
8V
VGS = 10V
7V
7V
6V
6V
5V
0
0
0
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 15A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
30
25
20
15
10
5
VGS = 10V
VGS = 10V
7V
I D = 30A
I D = 15A
6V
5V
0
5
10
15
20
25
-50
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 15A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
26
24
22
20
18
16
14
12
10
8
VGS = 10V
TJ = 125ºC
TJ = 25ºC
6
4
2
0
5
10 15 20 25 30 35 40 45 50 55 60 65
ID - Amperes
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFN30N110P
Fig. 7. Input Admittance
Fig. 8. Transconductance
40
35
30
25
20
15
10
5
55
50
45
40
35
30
25
20
15
10
5
TJ = - 40ºC
TJ = 125ºC
25ºC
- 40ºC
25ºC
125ºC
0
0
0
5
10
15
20
25
30
35
40
45
50
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
1.2
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
90
80
70
60
50
40
30
20
10
0
VDS = 550V
I
I
D = 15A
G = 10mA
6
TJ = 125ºC
TJ = 25ºC
4
2
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
50
100
150
200
250
300
350
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.000
0.100
0.010
0.001
= 1 MHz
f
C
iss
C
C
oss
rss
10
0
5
10
15
20
25
30
35
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_30N110P(96) 04-01-08-A
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