IXFN300N20X3 [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXFN300N20X3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
X3-Class HiPerFETTM
Power MOSFET
VDSS = 200V
ID25 = 300A
RDS(on) 3.5m
IXFN300N20X3
D
N-Channel Enhancement Mode
Avalanche Rated
G
S
miniBLOC, SOT-227
E153432
S
S
G
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
200
200
V
V
VGSS
VGSM
Continuous
Transient
20
30
V
V
S
D
D = Drain
ID25
IL(RMS)
IDM
TC = 25C
External Lead Current Limit
TC = 25C, Pulse Width Limited by TJM
300
200
700
A
A
A
G = Gate
S = Source
IA
EAS
TC = 25C
TC = 25C
150
3.5
A
J
PD
TC = 25C
695
20
W
Features
dv/dt
IS IDM, VDD VDSS, TJ 150°C
V/ns
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
C
C
C
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation Voltage 2500V~
High Current Handling Capability
Avalanche Rated
VISOL
50/60 Hz, RMS
IISOL 1mA
t = 1 minute
t = 1 second
2500
3000
V~
V~
Md
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
Low RDS(on)
Weight
30
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
200
V
V
Applications
2.5
4.5
Switch-Mode and Resonant-Mode
Power Supplies
200 nA
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
IDSS
25 A
1.5 mA
TJ = 125C
RDS(on)
VGS = 10V, ID = 150A, Note 1
3.5 m
© 2017 IXYS CORPORATION, All Rights Reserved.
DS100845B(9/17)
IXFN300N20X3
Symbol
Test Conditions
Characteristic Values
SOT-227B (IXFN) Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
80
135
S
RGi
1.8
Ciss
Coss
Crss
23.8
4.0
nF
nF
pF
VGS = 0V, VDS = 25V, f = 1MHz
3.2
Effective Output Capacitance
Co(er)
Co(tr)
1640
5640
pF
pF
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
44
43
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 150A
(M4 screws (4x) supplied)
V
184
13
RG = 1(External)
Qg(on)
Qgs
375
117
94
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 150A
Qgd
RthJC
RthCS
0.18 C/W
C/W
0.05
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
300
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
1200
1.4
V
trr
QRM
IRM
172
1.1
12.8
ns
IF = 150A, -di/dt = 100A/μs
μC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFN300N20X3
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
300
250
200
150
100
50
900
800
700
600
500
400
300
200
100
0
V
= 10V
GS
9V
V
= 10V
9V
GS
8V
7V
8V
7V
6V
6V
5V
5V
6
0
0
0
0
0.2
0.4
0.6
0.8
1
1.2
0
2
4
8
10
12
14
16
18
20
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 150A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
300
250
200
150
100
50
V
= 10V
GS
V
= 10V
GS
9V
8V
I
= 300A
D
I
= 150A
D
7V
6V
5V
0
-50
-25
0
25
50
75
100
125
150
0.4
0.8
1.2
1.6
2
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 150A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
V
= 10V
GS
BV
DSS
o
T = 125 C
J
o
V
T = 25 C
GS(th)
J
-60
-40
-20
0
20
40
60
80
100
120
140
160
100
200
300
400
500
600
700
800
900
TJ - Degrees Centigrade
ID - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved.
IXFN300N20X3
Fig. 7. Maximum Drain Current vs. Case Temperature
Fig. 8. Input Admittance
400
350
300
250
200
150
100
50
220
200
180
160
140
120
100
80
External Lead Current Limit
o
T
J
= 125 C
o
25 C
60
o
- 40 C
40
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
-50
-25
0
25
50
75
100
125
350
350
150
400
400
TC - Degrees Centigrade
VGS - Volts
Fig. 10. Forward Voltage Drop of Intrinsic Diode
Fig. 9. Transconductance
400
350
300
250
200
150
100
50
800
700
600
500
400
300
200
100
0
o
T = - 40 C
J
o
25 C
o
125 C
o
T = 125 C
J
o
T = 25 C
J
0
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VSD - Volts
ID - Amperes
Fig. 12. Capacitance
Fig. 11. Gate Charge
100,000
10,000
1,000
100
10
9
8
7
6
5
4
3
2
1
0
V
= 100V
DS
C
C
iss
I
I
= 150A
= 10mA
D
G
oss
C
rss
10
= 1 MHz
f
1
0
50
100
150
200
250
300
1
10
100
1,000
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN300N20X3
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
30
25
20
15
10
5
1000
100
10
R
Limit
)
DS(
on
25μs
100μs
External Lead
Current Limit
1ms
10ms
1
o
T = 150 C
J
100ms
o
DC
T
C
= 25 C
Single Pulse
0
0.1
0
50
100
150
200
1
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.3
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYS REF: F_300N20X3(29-S202) 6-22-17
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