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IXFN280N085 [IXYS]

HiPerFET Power MOSFETs Single Die MOSFET; HiPerFET功率MOSFET的单芯片MOSFET
IXFN280N085
型号： IXFN280N085
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerFET Power MOSFETs Single Die MOSFET
HiPerFET功率MOSFET的单芯片MOSFET
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中文：  中文翻译
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HiPerFETTM Power  
MOSFETs Single Die  
MOSFET  
VDSS = 85V  
IXFN280N085  
ID25 = 280A  
RDS(on) ≤ 4.4mΩ  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
miniBLOC, SOT-227 B  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
S
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
85  
85  
V
V
G
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
S
D
ID25  
TC = 25°C, Chip capability  
280  
200  
A
A
A
IL(RMS)  
IDM  
External Lead Current Limit  
G = Gate  
S = Source  
D = Drain  
TC = 25°C, pulse width limited by TJM  
1120  
IA  
TC = 25°C  
TC = 25°C  
200  
4
A
J
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
EAS  
dV/dt  
Pd  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
5
V/ns  
W
700  
Features  
•International standard package  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
•miniBLOC, with Aluminium nitride  
TJM  
Tstg  
VISOL  
isolation  
-55 ... +150  
•Low RDS(on) HDMOSTM process  
50/60 Hz, RMS t = 1min  
2500  
3000  
V~  
V~  
•Rugged polysilicon gate cell structure  
•Avalanche rated  
• Guaranteed FBSOA  
•Low package inductance  
•Fast intrinsic Rectifier  
IISOL ≤ 1mA  
t = 1s  
Md  
Mounting torque  
Terminal connection torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
Advantages  
• Easy to mount  
• Space savings  
• High power density  
Symbol  
BVDSS  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
Applications  
VGS = 0V, ID = 3mA  
85  
V
• DC-DC converters  
• Battery chargers  
• Switched-mode and resonant-mode  
power supplies  
• DC choppers  
• Temperature and lighting controls  
VGS(th)  
IGSS  
VDS = VGS, ID = 8mA  
2.0  
4.0  
V
VGS = ±20V, VDS = 0V  
±200  
nA  
IDSS  
VDS = VDSS  
VGS = 0V  
100  
2
μA  
mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 100A, Note 1  
4.4 mΩ  
DS98747B(12/08)  
© 2008 IXYS Corporation, All rights reserved  
IXFN280N085  
Symbol  
Test Conditions  
Characteristic Values  
miniBLOC, SOT-227 B  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
60  
100  
S
Ciss  
Coss  
Crss  
19  
6.4  
3.2  
nF  
nF  
nF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
40  
150  
112  
60  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 60A  
RG = 1Ω (External)  
M4 screws (4x) supplied  
Qg(on)  
Qgs  
Qgd  
580  
77  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min.  
Min.  
Max.  
Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
280  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
E
F
4.09  
14.91  
4.29  
15.11  
0.161  
0.587  
0.169  
0.595  
0.05  
G
H
30.12  
38.00  
30.30  
38.23  
1.186  
1.496  
1.193  
1.505  
J
K
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
L
M
0.76  
12.60  
0.84  
12.85  
0.030  
0.496  
0.033  
0.506  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
Q
4.95  
26.54  
5.97  
26.90  
0.195  
1.045  
0.235  
1.059  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
T
U
24.59  
-0.05  
25.07  
0.1  
0.968  
-0.002  
0.987  
0.004  
IS  
VGS = 0V  
280  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1120  
1.2  
trr  
200  
ns  
μC  
A
IF = 50A, -di/dt = 100A/μs, VR = 50V  
QRM  
IRM  
0.76  
8.00  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN280N085  
Fig. 2. Output Characteristics  
@ 125ºC  
Fig. 1. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
5V  
5V  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
350  
1.1  
0.0  
-50  
-50  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 140A Value  
vs. Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 140A Value  
vs. Drain Current  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
I D = 280A  
I D = 140A  
TJ = 25ºC  
0
50  
100  
150  
200  
250  
300  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 6. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
220  
200  
180  
160  
140  
120  
100  
80  
External Lead Current Limit  
TJ = 125ºC  
TJ = 25ºC  
60  
40  
50  
25  
20  
0
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
-25  
0
25  
50  
75  
100  
125  
VSD - Volts  
TC - Degrees Centigrade  
© 2008 IXYS Corporation, All rights reserved  
IXYS REF: F_280N085(9Y-N17)12-02-08-A  
IXFN280N085  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
60  
40  
40  
20  
20  
0
0
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
100  
10  
1
VDS = 43V  
= 1 MHz  
f
I
I
D = 100A  
G = 10mA  
C
iss  
C
oss  
C
rss  
30  
0
5
10  
15  
20  
25  
35  
40  
0
50 100 150 200 250 300 350 400 450 500 550 600  
QG - NanoCoulombs  
VDS - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFN280N085  
Fig. 12. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
10,000  
1,000  
100  
10  
10,000  
1,000  
100  
10  
R
Limit  
R
Limit  
DS(on)  
DS(on)  
25µs  
100µs  
1ms  
100µs  
1ms  
External-Lead Limit  
External-Lead Limit  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
T
T
= 150ºC  
= 25ºC  
T
T
= 150ºC  
= 75ºC  
J
J
C
C
Single Pulse  
Single Pulse  
1
1
1
10  
100  
1
10  
100  
VDS - Volts  
VDS - Volts  
© 2008 IXYS Corporation, All rights reserved  
IXYS REF: F_280N085(9Y-N17)12-02-08-A  

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