IXFN27N80Q [IXYS]
HiPerFET Power MOSFETs Q-Class; HiPerFET功率MOSFET Q系列
| 型号： | IXFN27N80Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q-Class |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
PowerMOSFETs
V
I
= 800
= 27
V
A
IXFN 27N80Q
DSS
D25
RDS(on) = 320 mΩ
Q-Class
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
D
G
Preliminarydatasheet
S
S
miniBLOC,SOT-227B(IXFN)
Symbol
TestConditions
Maximum Ratings
E153432
S
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
G
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
±20
±30
V
V
VGSM
S
D
ID25
IDM
IAR
TC = 25°C
27
108
27
A
A
A
TC = 25°C, pulse width limited by TJM
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
PD
TC = 25°C
520
W
Features
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
• Internationalstandardpackage
• Epoxy meet
-55 ... +150
UL94V-0,flammabilityclassification
• miniBLOCwithAluminiumnitride
isolation
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
• IXYS advanced low Qg process
• Ruggedpolysilicongatecellstructure
• UnclampedInductiveSwitching(UIS)
rated
Md
Mountingtorque
Terminalconnectiontorque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
• Lowpackageinductance
• FastintrinsicRectifier
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
• DC-DC converters
• Batterychargers
min.
typ.
max.
• Switched-modeandresonant-mode
power supplies
VDSS
VGH(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
800
2.5
V
V
• DC choppers
• Temperatureandlightingcontrols
4.5
±100 nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100
2
µA
mA
• Easy to mount
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
0.32
Ω
• Space savings
• High power density
© 2001 IXYS All rights reserved
98813 (04/01)
IXFN 27N80Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B
VDS = 10 V; ID = 0.5 ID25, pulse test
20
27
S
Ciss
Coss
Crss
7600
750
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
120
td(on)
tr
td(off)
tf
20
28
50
13
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
M4 screws (4x) supplied
RG = 1 Ω (External),
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
Qg(on)
Qgs
170
4
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
7
nCE
F
4.09
4.29
0.161
0.587
0.169
0.595
14.91
15.11
Qgd
65
G30.12
H
30.30
1.186
1.193
38.00
38.23
1.496
1.505
J
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
RthJC
RthCK
0.24K/W
K/W
K
0.05
L
0.76
0.84
0.030
0.496
0.033
0.506
M
12.60
12.85
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
4.95
5.97
0.195
1.045
0.235
1.059
Q
26.54
26.90
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
24.59
-0.05
25.07
0.1
0.968
0.987
0.004
U
-0.002
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
27
A
A
ISM
Repetitive;
pulse width limited by TJM
108
VSD
IF = IS, VGS = 0 V,
Note 1
1.5
V
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
250
ns
µC
A
QRM
IRM
1.3
8
Note 1:
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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