STU411D [SAMHOP]
Dual Enhancement Mode Field Effect Transistor (N and P Channel); 双增强模式场效应晶体管（ N和P沟道）
| 型号： | STU411D |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | Dual Enhancement Mode Field Effect Transistor (N and P Channel) |
| 文件： | 总11页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Green
Product
STU411D
Ver 1.0
a
S mHop Microelectronics Corp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRODUCT SUMMARY (N-Channel)
PRODUCT SUMMARY (P-Channel)
RDS(ON) (mΩ) Max
RDS(ON) (mΩ) Max
VDSS
ID
VDSS
ID
3± @ VGS=10V
4± @ VGS=4.5V
48 @ VGS=-10V
68 @ VGS=-4.5V
15A
40V
-1±A
-40V
D1
D2
D1/D2
G1
G2
S 1
G1
S 2
P-ch
S 2
S 1
N-ch
G2
TO-252-4L
°
ABSOLUTE MAXIMUM RATINGS TC=±5 C unless otherwise noted
)
(
Symbol
VDS
Parameter
Units
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
V
V
40
±±0
15
-40
±±0
-1±
VGS
°
TC=±5 C
A
A
Drain Current-Continuous a
ID
°
TC=70 C
1±
43
8
-10
-36
15
b
IDM
A
-Pulsed
Sigle Pulse Avalanche Energy d
EAS
mJ
W
W
°
TC=±5 C
11
Maximum Power Dissipation a
PD
°
TC=70 C
6.7
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case a
1±
60
R
°C/W
°C/W
JC
JA
a
R
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Sep,04,±008
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1
STU411D
Ver 1.0
°
N-Channel ELECTRICAL CHARACTERISTICS TC=25 C unless otherwise noted
)
(
4
Symbol
Parameter
Typ
Min
Max Units
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= 20V , VDS=0V
40
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
uA
uA
1
10
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
1.25
3
1.5
25
32
17
VGS(th)
VDS=VGS , ID=250uA
VGS=10V , ID=15A
VGS=4.5V , ID=13A
VDS=5V , ID=15A
V
32
42
m ohm
m ohm
S
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
c
DYNAMIC CHARACTERISTICS
pF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
c
CISS
623
95
VDS=20V,VGS=0V
f=1.0MHz
COSS
CRSS
56
SWITCHING CHARACTERISTICS
ns
ns
ns
ns
tD(ON)
10.5
10.6
39
Turn-On Delay Time
VDD=20V
ID=1A
t
r
Rise Time
VGS=10V
RGEN=3.3 ohm
tD(OFF)
Turn-Off Delay Time
Fall Time
t
f
9.6
9.5
nC
VDS=20V,ID=15A,VGS=10V
VDS=20V,ID=15A,VGS=4.5V
Total Gate Charge
Qg
4.5
1.6
2.3
nC
nC
nC
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=20V,ID=15A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
2.2
1.2
Maximum Continuous Drain-Source Diode Forward Current
b
Diode Forward Voltage
VGS=0V,IS=2.2A
A
V
IS
0.78
VSD
Sep,04,2008
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2
STU411D
Ver 1.0
°
P-Channel ELECTRICAL CHARACTERISTICS TC=25 C unless otherwise noted
)
(
4 Symbol
Parameter
Min
Typ
Max Units
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V , ID=-250uA
VDS=-32V , VGS=0V
VGS= 20V , VDS=0V
-40
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
uA
uA
-1
10
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
-1.25
-3
-1.6
38
52
9
VGS(th)
VDS=VGS , ID=-250uA
VGS=-10V , ID=-12A
VGS=-4.5V , ID=-10A
VDS=-5V , ID=-12A
V
48
68
m ohm
m ohm
S
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
c
DYNAMIC CHARACTERISTICS
pF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
c
CISS
895
138
67
VDS=-20V,VGS=0V
f=1.0MHz
COSS
CRSS
SWITCHING CHARACTERISTICS
ns
ns
ns
ns
tD(ON)
14
14
Turn-On Delay Time
VDD=-20V
ID=-1A
t
r
Rise Time
VGS=-10V
RGEN=3 ohm
tD(OFF)
54
10
Turn-Off Delay Time
Fall Time
t
f
14.5
7
nC
VDS=-20V,ID=-12A,VGS=-10V
VDS=-20V,ID=-12A,VGS=-4.5V
Total Gate Charge
Qg
nC
nC
nC
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
2.1
3.4
VDS=-20V,ID=-12A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
A
V
IS
-2.0
-1.2
b
-0.77
Diode Forward Voltage
VGS=0V,IS=-2.0A
VSD
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
_
c.Guaranteed by design, not subject to production testing.
°
d.Starting TJ=25 C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)
Sep,04,2008
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3
STU411D
Ver 1.0
N-Channel
40
20
16
V
V
GS =10V
GS =4.5V
V
GS =4V
32
24
16
V
V
GS =3.5V
Tj=125 C
25
12
-55 C
8
4
0
GS =3V
8
0
V
GS =2.5V
2
0
0.8
1.6
2.4
3.2
4.0
4.8
0
0.5
1
1.5
2.5
3
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
72
60
1.5
1.4
VGS =4.5V
ID=13A
48
36
1.3
VGS =4.5V
VGS =10V
1.2
24
12
VGS =10V
ID=15A
1.1
1.0
0.0
0
1
8
16
24
32
40
150
0
125
25
50
75
100
°
Tj( C )
°
Tj, Junction Temperature( C )
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.2
1.15
ID=250uA
VDS =VG S
ID=250uA
1.1
1.0
1.10
1.05
1.00
0.95
0.90
0.9
0.8
0.7
0.6
0.5
0.85
0
-50
25 50
-50 -25
0
25 50
75 100 125 150
-25
125 150
75 100
°
Tj, Junction Temperature( C )
°
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,04,2008
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4
STU411D
Ver 1.0
84
70
56
42
28
20.0
10.0
ID=15A
125 C
5.0
125 C
75 C
25 C
75 C
25 C
14
1.0
0
0
2
4
6
8
10
1.6
2.0
0
0.4
0.8
1.2
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
1200
10
VDS=20V
1000
800
8
ID=15A
Ciss
6
4
600
400
Coss
Crss
2
0
200
0
0
5
10
15
20
25
30
6
0
2
4
8
10
12
14 16
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
1000
100
10
100
10
t
i
1
m
0
i
u
L
s
)
1
N
0
0
O
u
(
s
R DS
TD(off)
1
m
s
1
0
m
s
D
C
Tr
Tf
TD(on)
1
VG S =10V
S ingle P ulse
Tc=25 C
VDS=20V,ID=1A
VGS=10V
1
0.1
1
3
10
60 100
0.1
1
10
100
Rg, Gate Resistance(Ω)
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,04,2008
www.samhop.com.tw
5
STU411D
Ver 1.0
(BR )DSS
15V
t
p
DR IVE R
L
V
DS
D.U .T
R
+
G
V
DD
-
I
A
AS
20V
0.01
t
p
I
AS
duct
In
i
ncl
U
ed
am
p
ve ave
W
f rms
o
t
Te
s
d
uct
In
Ci cu t
r i
i
ncl
U
ed
am
p
ve
Figure 13b.
Figure 13a.
2
1
D=0.5
0.2
0.1
0.1
0.05
DM
P
0.02
0.01
1
t
2
t
1. R ӰJA (t)=r (t) * R ӰJA
2. R ӰJA=S ee Datasheet
3. TJM-TA = PDM* R ӰJA (t)
4. Duty Cycle, D=t1/t2
S INGLE PULS E
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Sep,04,2008
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6
STU411D
Ver 1.0
P-Channel
20
15
12
9
VGS=-10V
VGS=-4.5V
16
12
VGS=-3.5V
Tj=125 C
-55 C
25 C
6
3
0
8
4
0
VGS=-8V
VGS=-3V
2.5
0
0.5
1
1.5
2
3
0
0.8
1.6
2.4
3.2
4.0
4.8
-VDS, Drain-to-Source Voltage(V)
-VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
1.5
100
80
1.4
1.3
1.2
1.1
1.0
0.0
VGS=-10V
ID=-12A
VGS=-4.5V
VGS=-10V
60
40
VGS=-4.5V
ID=-10A
20
0
1
4
8
12
16
20
0
25
50
75
100
125
°
150
°
Tj( C )
-ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.15
1.3
ID=-250uA
VDS=VGS
1.2
1.10
1.05
1.00
ID=-250uA
1.1
1.0
0.9
0.8
0.95
0.90
0.85
0.7
0.6
75 100
-50 -25
0
25 50
125 150
-50 -25
0
25 50
75 100 125 150
°
Tj, Junction Temperature( C )
°
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,04,2008
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7
STU411D
Ver 1.0
120
20.0
10.0
ID=-12A
100
80
25 C
125 C
60
40
75 C
125 C
75 C
25 C
20
1.0
0
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
-VGS, Gate-to-Source Voltage(V)
-VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
1200
10
Ciss
VDS=-20V
8
1000
800
ID=-12A
6
600
400
4
Coss
2
0
200
Crss
0
0
5
10
15
20
25
30
6
0
2
4
8
10
12
14 16
-VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
1000
100
10
100
10
t
i
m
i
1
L
0
)
0
u
N
s
TD(off)
O
(
R DS
1
m
s
1
0
TD(on)
m
Tr
s
D
C
Tf
1
VG S =-10V
S ingle P ulse
Tc=25 C
VDS=-20V,ID=-1A
VGS=-10V
1
1
0.1
6
10
60 100
0.1
1
10
100
Rg, Gate Resistance(Ω)
-VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,04,2008
www.samhop.com.tw
8
STU411D
Ver 1.0
(BR )DSS
15V
t
p
DR IVE R
L
V
DS
D.U .T
R
+
G
V
DD
-
I
A
AS
20V
0.01
t
p
I
AS
duct
In
i
ncl
U
ed
am
p
ve ave
W
f rms
o
t
Te
s
d
uct
In
Ci cu t
r i
i
ncl
U
ed
am
p
ve
Figure 13b.
Figure 13a.
2
1
D=0.5
0.2
0.1
0.1
0.05
DM
P
1
t
0.02
0.01
2
t
1. R ӰJA (t)=r (t) * R ӰJA
2. R ӰJA=S ee Datasheet
3. TJM-TA = PDM* R ӰJA (t)
4. Duty Cycle, D=t1/t2
S INGLE PULS E
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Sep,04,2008
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9
STU411D
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
E
TO-252-4L
A
b2
C
L3
1
D1
D
E1
H
1
2
3
4
5
DETAIL "A"
L4
b1
b
e
L2
L
A1
DETAIL "A"
L1
MILLIMETERS
INCHES
MAX
SYMBOLS
MIN
MAX
MIN
0.087
0.000
0.017
0.025
0.205
0.018
0.236
0.205
0.252
0.173
0.050
0.370
0.055
0.108
0.020
0.035
0.025
A
A1
b
2.200
0.000
0.440
0.635
5.210
0.450
6.000
5.200
6.400
4.400
1.270
9.400
1.397
2.743
0.508
0.890
0.640
2.387
0.127
0.680
0.787
5.460
0.584
6.223
5.515
6.731
5.004
0.094
0.005
0.027
0.031
0.215
0.023
0.245
0.217
0.265
0.197
b1
b2
C
D
D1
E
E1
e
BSC
BSC
H
10.400
1.770
0.409
0.070
L
REF.
REF.
0.050
REF.
REF.
1.270
L1
L2
L3
L4
1.010
0.040
10°
°
°
°
10
0
0
°
°
7
REF.
1
7
REF.
Sep,04,2008
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10
STU411D
Ver 1.0
TO-252-4L Tape and Reel Data
TO-252-4L Carrier Tape
K0
T
°
6 Max
A0
SECTION A-A
°
SECTION B-B
4 Max
P1
P2
D1
FEED DIRECTION
D0
E
A
A
P0
UNIT:р
K0
D1
P1
P2
PACKAGE
A0
B0
D0
E1
E2
P0
T
ӿ1.5
+ 0.1
TO-252
(16 р*
6.96
²0.1
10.49
²0.1
2.79
²0.1
16.0
²0.3
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
1.75
²0.1
ӿ2
-
0
TO-252-4L Reel
T
S
G
V
R
H
W
H
UNIT:р
T
N
W
R
M
S
G
K
V
TAPE SIZE
REEL SIZE
ӿ13.0
17.0
+ 1.5
ӿ330
² 0.5
2.0
²0.5
ӿ97
² 1.0
2.2
10.6
16 р
ӿ 330
+
-
0.5
0.2
-
0
Sep,04,2008
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11
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