IXTK400N15X4 [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTK400N15X4 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
X4-Class
VDSS = 150V
ID25 = 400A
RDS(on) 3.1m
IXTK400N15X4
IXTX400N15X4
Power MOSFETTM
N-Channel Enhancement Mode
Avalanche Rated
TO-264P (IXTK)
Symbol
Test Conditions
Maximum Ratings
G
D
VDSS
VDGR
TJ = 25C to 175C
TJ = 25C to 175C, RGS = 1M
150
150
V
V
Tab
S
PLUS247 (IXTX)
VGSS
VGSM
Continuous
Transient
20
30
V
V
ID25
IL(RMS)
IDM
TC = 25C (Chip Capability)
External Lead Current Limit
TC = 25C, Pulse Width Limited by TJM
400
160
900
A
A
A
G
D
Tab
S
IA
EAS
TC = 25C
TC = 25C
200
3
A
J
PD
TC = 25C
1500
10
W
G = Gate
S = Source
D
= Drain
dv/dt
IS IDM, VDD VDSS, TJ 150°C
V/ns
Tab = Drain
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
C
C
C
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
Low QG
Avalanche Rated
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in
N/lb
Low Package Inductance
20..120 /4.5..27
Weight
TO-264
PLUS247
10
6
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 1mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS= 0V
150
V
V
Switch-Mode and Resonant-Mode
Power Supplies
2.5
4.5
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
200 nA
25 A
IDSS
TJ = 150C
2
mA
RDS(on)
VGS = 10V, ID = 100A, Note 1
2.4
3.1 m
© 2018 IXYS CORPORATION, All Rights Reserved
DS100905A(6/18)
IXTK400N15X4
IXTX400N15X4
Symbol
Test Conditions
Characteristic Values
TO-264 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
170
1.2
Max
A
E
Q
S
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
100
S
R
D
Q1
RGi
R1
1
2
3
L1
Ciss
Coss
Crss
14.5
3.1
nF
nF
pF
VGS = 0V, VDS = 25V, f = 1MHz
L
8.0
c
b
A1
b1
b2
Effective Output Capacitance
e
x2
Co(er)
Co(tr)
2500
9400
pF
pF
VGS = 0V
Energy related
Time related
0P
4
VDS = 0.8 • VDSS
Terminals:
1
= Gate
2,4 = Drain
= Source
BACK SIDE
3
td(on)
tr
td(off)
tf
40
22
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
180
8
RG = 1(External)
Qg(on)
Qgs
430
100
100
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.10C/W
0.15C/W
Source-Drain Diode
PLUS247TM Outline
A
Symbol
Test Conditions
Characteristic Values
E1
E
Q
A2
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
D2
R
D
IS
VGS = 0V
400
A
A
V
D1
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A , VGS = 0V, Note 1
1600
1.4
4
1
2
3
L1
L
trr
175
1.1
ns
μC
A
IF = 150A, -di/dt = 100A/s
QRM
IRM
VR = 100V, VGS = 0V
b
A1
e
12.3
3 PLCS
C
2 PLCS
b2 2 PLCS
b4
Terminals: 1 - Gate
2,4 - Drain
3 - Source
Note 1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTK400N15X4
IXTX400N15X4
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Extended Output Characteristics @ TJ = 25oC
400
350
300
250
200
150
100
50
1000
900
800
700
600
500
400
300
200
100
0
V
= 10V
GS
9V
V
= 10V
8V
GS
8V
7V
7V
6V
5V
6V
5V
0
0
0
0
0.2
0.4
0.6
0.8
1
1.2
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 200A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150oC
400
350
300
250
200
150
100
50
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10V
8V
GS
V
= 10V
GS
7V
6V
I
= 400A
D
I
= 200A
D
5V
4V
0
-50
-25
0
25
50
75
100
125
150
175
0.4
0.8
1.2
1.6
2
2.4
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 200A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
V
= 10V
GS
BV
DSS
o
T = 150 C
J
o
T = 25 C
J
V
GS(th)
100
-60
-40
-20
0
20
40
60
80
120
140
160
100
200
300
400
500
600
700
800
900
1000
TJ - Degrees Centigrade
ID - Amperes
© 2018 IXYS CORPORATION, All Rights Reserved
IXTK400N15X4
IXTX400N15X4
Fig. 7. Maximum Drain Current vs. Case Temperature
Fig. 8. Input Admittance
180
160
140
120
100
80
400
350
300
250
200
150
100
50
V
= 10V
DS
External Lead Current Limit
o
T
J
= 150 C
o
25 C
o
- 40 C
60
40
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
100
125
150
450
450
TC - Degrees Centigrade
VGS - Volts
Fig. 10. Forward Voltage Drop of Intrinsic Diode
Fig. 9. Transconductance
500
450
400
350
300
250
200
150
100
50
800
700
600
500
400
300
200
100
0
o
V
= 10V
T = - 40 C
J
DS
o
T = 25 C
J
o
25 C
o
T = 150 C
J
o
150 C
0
0
50
100
150
200
250
300
350
400
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VSD - Volts
ID - Amperes
Fig. 12. Capacitance
Fig. 11. Gate Charge
100,000
10,000
1,000
100
10
9
8
7
6
5
4
3
2
1
0
V
= 75V
DS
C
C
C
iss
I
I
= 200A
= 10mA
D
G
oss
rss
10
= 1 MHz
f
1
0
50
100
150
200
250
300
350
400
1
10
100
1,000
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK400N15X4
IXTX400N15X4
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
28
24
20
16
12
8
1000
100
10
R
Limit
)
DS(
on
25μs
100μs
External Lead Limit
1ms
o
T = 175 C
J
o
T
C
= 25 C
4
10ms
Single Pulse
DC
100ms
0
1
0
20
40
60
80
100
120
140
1
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.2
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_400N15X4 (191) 6-19-18
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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