IXTK40P50P [IXYS]
P-Channel Enhancement Mode Avalanche Rated; P沟道增强型额定雪崩
| 型号： | IXTK40P50P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | P-Channel Enhancement Mode Avalanche Rated |
| 文件： | 总5页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarPTM
Power MOSFETs
VDSS = - 500V
ID25 = - 40A
IXTK40P50P
IXTX40P50P
RDS(on)
≤
230mΩ
P-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXTK)
G
D
S
Symbol
VDSS
Test Conditions
Maximum Ratings
Tab
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
- 500
- 500
V
V
VDGR
PLUS247 (IXTX)
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
- 40
A
A
- 120
G
IA
TC = 25°C
TC = 25°C
- 40
3.5
A
J
D
S
Tab
EAS
G = Gate
S = Source
D
= Drain
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
V/ns
W
Tab = Drain
890
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Features
z International Standard Packages
z Rugged PolarPTM Process
z Avalanche Rated
Md
Mounting Force
Mounting Torque
(PLUS247)
(TO-264)
20..120/4.5..27
N/lb.
Nm/lb.in.
1.13/10
Weight
PLUS247
TO-264
6
10
g
g
z Fast Intrinsic Diode
z Low Package Inductance
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
- 500
- 2.0
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = - 250μA
VDS = VGS, ID = -1mA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
Applications
- 4.0
z
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
±100 nA
z
z
IDSS
- 50 μA
z
TJ = 125°C
- 250 μA
z
Current Regulators
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
230 mΩ
DS99935C(01/13)
© 2012 IXYS CORPORATION, All Rights Reserved
IXTK40P50P
IXTX40P50P
Symbol
Test Conditions
Characteristic Values
TO-264 AA Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ. Max.
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = - 25V, f = 1MHz
23
38
S
Ciss
Coss
Crss
11.5
1150
93
nF
pF
pF
td(on)
tr
td(off)
tf
37
59
90
34
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
1.12
2.39
2.90
5.13
2.89
2.10
1.42
2.69
3.09
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
Qg(on)
Qgs
205
55
nC
nC
nC
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
75
c
D
E
e
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.83
.021
1.020
.780
.033
1.030
.786
RthJC
RthCS
0.14 °C/W
°C/W
0.15
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
Source-Drain Diode
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Symbol
Test Conditions
Characteristic Values
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IS
VGS = 0V
- 40
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = - 20A, VGS = 0V, Note 1
-160
- 3.0
PLUS247TM Outline
trr
QRM
IRM
477
14.5
- 61
ns
μC
A
IF = - 20A, -di/dt = -150A/μs
VR = -100V, VGS = 0V
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTK40P50P
IXTX40P50P
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-40
-35
-30
-25
-20
-15
-10
-5
VGS = -10V
- 7V
VGS = -10V
- 7V
- 6V
- 6V
- 5V
- 5V
0
0
-5
-10
-15
-20
-25
-30
0
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = - 20A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
-40
-35
-30
-25
-20
-15
-10
-5
2.4
VGS = -10V
- 7V
VGS = -10V
2.0
1.6
1.2
0.8
0.4
I D = - 40A
- 6V
I D = - 20A
- 5V
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = - 20A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
-45
-40
-35
-30
-25
-20
-15
-10
-5
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = -10V
TJ = 125ºC
TJ = 25ºC
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
© 2012 IXYS CORPORATION, All Rights Reserved
IXTK40P50P
IXTX40P50P
Fig. 7. Input Admittance
Fig. 8. Transconductance
70
60
50
40
30
20
10
0
-70
-60
-50
-40
-30
-20
-10
0
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
0
-10
-20
-30
-40
-50
-60
-70
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
-140
-120
-100
-80
-60
-40
-20
0
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
VDS = - 250V
I
I
D = - 20A
G = -1mA
TJ = 125ºC
TJ = 25ºC
0
20
40
60
80
100
120
140
160
180
200
220
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1000
-
100,000
10,000
1,000
100
f = 1 MHz
RDS(on) Limit
C
iss
100
-
25µs
100µs
C
oss
-
10
1ms
10ms
100ms
- 1
TJ = 150ºC
C = 25ºC
Single Pulse
DC
C
rss
-30
T
10
-
0.1
-
0
-5
-10
-15
-20
-25
-35
-40
-
-
1000
10
100
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK40P50P
IXTX40P50P
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS REF: T_40P50P(B9) 03-06-08-A
© 2012 IXYS CORPORATION, All Rights Reserved
相关型号：
IXTK46N50L
Power Field-Effect Transistor, 46A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
IXYS
IXTK550N055T2
Power Field-Effect Transistor, 550A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
IXYS
IXTK5N250
Power Field-Effect Transistor, 5A I(D), 2500V, 8.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
IXYS
IXTK75N30
Power Field-Effect Transistor, 75A I(D), 300V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
IXYS
IXTK75N30
Power Field-Effect Transistor, 75A I(D), 300V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明