KTK5133S [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH); N沟道MOS场效应晶体管（超高速开关，模拟开关）
| 型号： | KTK5133S |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) |
| 文件： | 总3页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTK5133S
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
L
B
L
FEATURES
DIM
A
MILLIMETERS
ᴌ2.5 Gate Drive.
_
+
2.93 0.20
B
C
D
E
1.30+0.20/-0.15
1.30 MAX
ᴌLow Threshold Voltage : Vth=0.5ᴕ1.5V.
ᴌHigh Speed.
ᴌSmall Package.
2
3
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
1
G
H
J
0.95
0.13+0.10/-0.05
ᴌEnhancement-Mode.
K
L
0.00 ~ 0.10
0.55
P
P
0.20 MIN
1.00+0.20/-0.10
7
M
N
P
MAXIMUM RATING (Ta=25ᴱ)
M
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
VDS
VGSS
ID
RATING
30
UNIT
V
1. SOURCE
2. GATE
Gate-Source Voltage
DC Drain Current
V
ᴦ20
150
3. DRAIN
mA
mW
ᴱ
PD
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
200
SOT-23
Tch
150
Tstg
-55ᴕ150
ᴱ
EQUIVALENT CIRCUIT
D
Marking
Lot No.
G
Type Name
KC
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Gate Leakage Current
SYMBOL
IGSS
TEST CONDITION
MIN.
TYP. MAX. UNIT
VGS=ᴦ16V, VDS=0V
ID=100ỌA, VGS=0V
-
-
-
ᴦ1
ỌA
V
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Drain Cut-off Current
30
-
1
VDS=30V, VGS=0V
-
-
ỌA
V
Vth
VDS=3V, ID=0.1mA
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
0.5
-
1.5
-
|Yfs|
VDS=10V, ID=80mA
100
-
mS
RDS(ON)
Ciss
ID=40mA, VGS=2.5V
-
-
-
-
-
-
3.7
7.0
2.3
5.9
84
275
5.2
-
ή
pF
pF
pF
nS
nS
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
Crss
Reverse Transfer Capacitance
Output Capacitance
-
Coss
-
ton
Turn-on Time
Turn-off Time
-
Switching Time
VDD=15V, ID=80mA, VGS=0ᴕ4V
toff
-
2001. 10. 29
Revision No : 0
1/3
KTK5133S
I F - VSD
ID - VDS
0.16
0.12
0.08
0.04
0
0.3
0.1
V
=0
GS
3.5V
4.0V
2.5V
0.05
0.03
V
GS
=1.5V
0.01
0
0.2
0.4
0.6
0.8
1.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
DRAIN-SOURCE VOLTAGE V
(V)
DIODE FORWARD VOLTAGE V
(V)
DS
SD
ID - VGS
Yfs - ID
1
0.30
0.25
V
=10V
DS
V
DS
=10V
0.5
0.3
Ta=-25 C
Ta=25 C
0.20
0.15
0.10
0.05
0.1
0.05
0.03
0.01
0.01
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0.03 0.05
0.1
0.3 0.5
GATE-SOURCE VOTAGE V
(V)
DRAIN CURRENT I (A)
D
GS
C - VDS
RDS (on) - ID
500
300
10
f=1MHz
Ta=75 C
Ta=25 C
Ta=-25 C
5
3
100
C
iss
C
oss
50
30
C
rss
8
V
=2.5V
DS
1
10
0
2
4
6
10 12 14 16 18 20
(V)
0.01
0.03 0.05
0.1
0.3 0.5
DRAIN CURRENT I (A)
DRAIN-SOURCE VOLTAGE V
D
DS
2001. 10. 29
Revision No : 0
2/3
KTK5133S
t - ID
P
- Ta
D
0.30
0.25
0.20
0.15
0.10
0.05
0
1K
V
=15V
=4V
DS
V
GS
500
300
t
d(off)
t
f
100
t
r
50
30
t
d(on)
10
0.01
0
20
40
60
80 100 120 140 160
0.03
0.05
0.1
0.2
DRAIN CURRENT I (A)
AMBIENT TEMPERATURE Ta ( C)
D
SWITCHING TIME TEST CIRCUIT
V
=15V
DD
I
=80mA
D
R
=187.5Ω
L
V
IN
V
D
OUT
PW=10µs
<
D.U. 1%
=
G
V
IN
4V
0V
KTK5133S
P.G
50Ω
S
2001. 10. 29
Revision No : 0
3/3
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