KTK5164S [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH); N沟道MOS场效应晶体管（超高速开关，模拟开关）
| 型号： | KTK5164S |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) |
| 文件： | 总3页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTK5164S
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
L
B
L
FEATURES
DIM
A
MILLIMETERS
_
2.5 Gate Drive.
+
2.93 0.20
B
C
D
E
1.30+0.20/-0.15
1.30 MAX
Low Threshold Voltage : Vth=0.5 1.5V.
High Speed.
2
3
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
1
Small Package.
G
H
J
0.95
Enhancement-Mode.
0.13+0.10/-0.05
K
L
0.00 ~ 0.10
0.55
P
P
0.20 MIN
1.00+0.20/-0.10
7
M
N
P
MAXIMUM RATINGS (Ta=25
CHARACTERISTIC
)
SYMBOL
VDS
VGSS
ID
RATING
60
UNIT
V
M
Drain-Source Voltage
Gate-Source Voltage
1. SOURCE
2. GATE
V
20
DC Drain Current
200
mA
mW
3. DRAIN
PD
Drain Power Dissipation
Channel Temperature
200
Tch
150
SOT-23
Tstg
Storage Temperature Range
-55 150
EQUIVALENT CIRCUIT
D
Marking
Lot No.
G
Type Name
KM
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Gate Leakage Current
SYMBOL
IGSS
TEST CONDITION
16V, VDS=0V
MIN.
TYP. MAX. UNIT
VGS
=
-
60
-
-
-
1
-
A
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Drain Cut-off Current
ID=100 A, VGS=0V
V
VDS=60V, VGS=0V
-
1
A
Vth
VDS=10V, ID=1mA
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
0.5
100
-
-
1.5
-
V
|Yfs|
VDS=10V, ID=50mA
-
mS
RDS(ON)
Ciss
ID=50mA, VGS=2.5V
1.5
55
13
40
2
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
-
65
18
50
pF
pF
pF
Crss
Reverse Transfer Capacitance
Output Capacitance
-
Coss
-
I
=100mA
D
V
tr
ton
tf
Rise Time
-
-
-
-
8
-
-
-
-
OUT
10V
0
V
IN
Turn-on Time
14
35
75
Switching Time
nS
10µs
Fall Time
V
= 30V
DD
V
:t , t < 5ns
r
f
IN
toff
Turn-off Time
<
D.U. 1%
(Z
=50Ω)
OUT
=
2002. 10. 17
Revision No : 1
1/3
KTK5164S
ID - VDS
(LOW VOLTAGE REGION)
ID - VDS
200
160
120
80
200
160
120
80
2.2V
COMMON SOURCE
Ta=25 C
2.2V
COMMON SOURCE
Ta=25 C
2.0V
2.0V
1.8V
1.6V
1.8V
40
40
0
1.6V
V
GS
=1.4V
V
GS
=1.4V
0
0
4
8
12
16
(V)
20
0
0.4
0.8
1.2
1.6
(V)
2.0
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
DS
DS
Yfs - ID
ID - VGS
1K
COMMON
SOURCE
COMMON SOURCE
=10V
V
DS
Ta=25 C
100
10
1
V
DS
=10V
Ta=25 C
100
10
0.1
1
10
100
1
2
3
4
5
GATE-SOURCE VOTAGE V
(V)
DRAIN CURRENT I (mA)
D
GS
C - VDS
VDS(ON) - I D
500
300
300
100
COMMON SOURCE
=0
COMMON SOURCE
=0
V
GS
V
GS
f=1MHz
Ta=25 C
f=1MHz
Ta=25 C
100
C
C
iss
50
30
50
30
C
oss
rss
10
10
5
5
3
10
30
50
100
300
0.1
0.3 0.5
1
3
5
10
DS
30 50
DRAIN-SOURCE VOLTAGE V
(V)
DRAIN CURRENT I (mA)
D
2002. 10. 17
Revision No : 1
2/3
KTK5164S
t - ID
I DR - VDS
1K
300
100
30
2
1
COMMON SOURCE
=0
V
GS
t
off
Ta=25 C
0.3
0.1
t
f
D
S
t
on
t
r
10
3
I
G
DR
I
D
<
D.U. 1%
V
OUT
=
:t , t < 5ns
10V
0
V
V
r
f
IN
IN
(Z
0.03
0.01
=50Ω)
OUT
10µs
1
COMMON SOURCE
V
Ta=25 C
DD
0.3
0
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
-1.2
0.01
0.03 0.05
0.1
0.3 0.5
DRAIN CURRENT I (mA)
D
DRAIN-SOURCE VOTAGE V
DS
PD - Ta
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
2002. 10. 17
Revision No : 1
3/3
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