KTK5164U [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR; N沟道MOS场效应型号: | KTK5164U |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
文件: | 总3页 (文件大小:45K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KTK5164U
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
FEATURES
M
B
M
DIM MILLIMETERS
_
· 2.5 Gate Drive.
A
B
C
D
E
2.00+0.20
D
2
1
· Low Threshold Voltage : Vth=0.5∼ 1.5V.
· High Speed.
_
1.25+ 0.15
_
+
0.90 0.10
3
0.3+0.10/-0.05
_
2.10 + 0.20
· Small Package.
G
H
J
0.65
0.15+0.1/-0.06
1.30
· Enhancement-Mode.
K
L
0.00-0.10
0.70
H
_
0.42+0.10
M
N
MAXIMUM RATINGS (Ta=25℃)
0.10 MIN
N
N
K
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
VDS
VGSS
ID
RATING
60
UNIT
V
1. SOURCE
2. GATE
Gate-Source Voltage
DC Drain Current
V
±20
200
3. DRAIN
mA
mW
℃
PD
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
100
Tch
150
USM
Tstg
-55∼ 150
℃
EQUIVALENT CIRCUIT
D
Marking
Lot No.
G
Type Name
KF
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Gate Leakage Current
SYMBOL
IGSS
TEST CONDITION
MIN.
TYP. MAX. UNIT
VGS=±16V, VDS=0V
ID=100μA, VGS=0V
-
60
-
-
-
±1
-
μA
V
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Drain Cut-off Current
VDS=60V, VGS=0V
-
1
μA
V
Vth
VDS=10V, ID=1mA
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
0.5
100
-
-
1.5
-
|Yfs|
VDS=10V, ID=50mA
-
mS
RDS(ON)
Ciss
ID=50mA, VGS=2.5V
1.5
55
13
40
2
Ω
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
-
65
18
50
pF
pF
pF
Crss
Reverse Transfer Capacitance
Output Capacitance
-
Coss
-
I
=100mA
D
V
tr
ton
tf
Rise Time
-
-
-
-
8
-
-
-
-
OUT
10V
0
V
IN
Turn-on Time
14
35
75
Switching Time
nS
10µs
Fall Time
V
= 30V
DD
V
:t , t < 5ns
r
f
IN
toff
Turn-off Time
<
D.U. 1%
(Z
=50Ω)
OUT
=
2008. 8. 11
Revision No : 0
1/3
KTK5164U
ID - VDS
(LOW VOLTAGE REGION)
ID - VDS
200
160
120
80
200
160
120
80
2.2V
COMMON SOURCE
Ta=25 C
2.2V
COMMON SOURCE
Ta=25 C
2.0V
2.0V
1.8V
1.6V
1.8V
40
40
0
1.6V
V
GS
=1.4V
V
GS
=1.4V
0
0
4
8
12
16
(V)
20
0
0.4
0.8
1.2
1.6
(V)
2.0
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
DS
DS
Yfs - ID
ID - VGS
1K
COMMON
SOURCE
COMMON SOURCE
=10V
V
DS
Ta=25 C
100
10
1
V
DS
=10V
Ta=25 C
100
10
0.1
1
10
100
1
2
3
4
5
GATE-SOURCE VOTAGE V
(V)
DRAIN CURRENT I (mA)
D
GS
C - VDS
VDS(ON) - I D
500
300
300
100
COMMON SOURCE
=0
COMMON SOURCE
=0
V
GS
V
GS
f=1MHz
Ta=25 C
f=1MHz
Ta=25 C
100
C
C
iss
50
30
50
30
C
oss
rss
10
10
5
5
3
10
30
50
100
300
0.1
0.3 0.5
1
3
5
10
DS
30 50
DRAIN-SOURCE VOLTAGE V
(V)
DRAIN CURRENT I (mA)
D
2008. 8. 11
Revision No : 0
2/3
KTK5164U
t - ID
I DR - VDS
1K
300
100
30
2
1
COMMON SOURCE
=0
V
GS
t
off
Ta=25 C
0.3
0.1
t
f
D
S
t
on
t
r
10
3
I
G
DR
I
D
<
D.U. 1%
V
OUT
=
:t , t < 5ns
10V
0
V
V
r
f
IN
IN
(Z
0.03
0.01
=50Ω)
OUT
10µs
1
COMMON SOURCE
Ta=25 C
V
DD
0.3
0
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
-1.2
0.01
0.03 0.05
0.1
0.3 0.5
DRAIN CURRENT I (mA)
D
DRAIN-SOURCE VOTAGE V
DS
PD - Ta
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
2008. 8. 11
Revision No : 0
3/3
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