KTK596 [KEC]
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE); N沟道结FIFLD EFFFCT晶体管（电容麦克风）
| 型号： | KTK596 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE) |
| 文件： | 总3页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTK596
SEMICONDUCTOR
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
CONDENSER MICROPHONE APPLICATION.
FEATURES
B
Expecially Suited for Use in Audio, Telephone.
Capacitor Microphones.
Excellent Voltage Characteristics.
Excellent Transient Characteristics.
DIM
A
B
MILLIMETERS
3.20 MAX
O
H
M
4.30 MAX
C
0.55 MAX
_
2.40+0.15
D
E
1.27
F
2.30
_
C
+
G
H
J
14.00 0.50
0.60 MAX
1.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
E
E
K
L
1.45
SYMBOL
RATING
-20
UNIT
V
25
M
N
O
0.80
VGDO
IG
Gate-Drain Voltage
Gate Current
0.55 MAX
0.75
3
1
2
N
10
mA
mA
mW
L
1. SOURCE
2. GATE
ID
Drain Current
1
PD
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
400
3. DRAIN
Tj
150
Tstg
-55 150
TO-92M
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
SYMBOL
V(BR)GDO
VGS(OFF)
IDSS (Note)
| yfs |
TEST CONDITION
MIN.
-20
-
TYP.
MAX.
UNIT
V
IG=-100 A
-
-
-1.5
480
-
VDS=5V, ID=1 A
-0.6
-
V
VDS=5V, VGS=0
100
0.4
-
A
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
Foward Transfer Admittance
Input Capacitance
1.2
3.5
0.65
mS
pF
pF
Ciss
-
Crss
Reverse Transfer Capacitance
-
-
Note : IDSS Classification A:100 170, B:150 240, C:210 350, C1:210~310, C2:290~350, D:320 480
2002. 8. 7
Revision No : 3
1/3
KTK596
ELECTRICAL CHARACTERISTICS
(Ta=25 , VCC=4.5V, RL=1k , Cin=15pF, See Specified Test Circuit.)
CHARACTERISTIC
Voltage Gain
SYMBOL
GV
TEST CONDITION
Vin=10mV, f=1kHz
MIN.
TYP.
MAX.
-
UNIT
dB
-
-
-3.0
Reduced Voltage Characteristic
Frequency Characteristic
Input Resistance
GVV
GVF
Vin=10mV, f=1kHz VCC=4.5V 1.5V
f=1kHz 110Hz
f=1kHz
-1.2
-4.0
-1.0
-
dB
-
-
-
dB
Zin
25
-
M
ZO
Output Resistance
f=1kHz
-
700
Vin=30mV, f=1kHz
Vin=0, A curve
Total Harmonic Distortion
Output Noise Voltage
THD
VNO
-
1.0
-
%
-
-110
dB
SPECIFIED TEST CIRCUIT
Voltage gain.
Frequency Characteristic.
Distortion.
Reduced Voltage Characteristic.
1kΩ
V
CC
=4.5V
V
CC
=1.5V
33uF
15pF
A
B
V
THD
VTVM
1kΩ
OSC
For Output
Impedance
2002. 8. 7
Revision No : 3
2/3
KTK596
VNO - IDSS
THD - VIN
30
10
-110
-112
-114
-116
-118
-120
V
V
R
:V =4.5V
NO CC
THD : V =4.5V
CC
=0,A CURVE
f=1kHz
: V =5.0V
DS
i
I
DSS
=1.0kΩ
L
I
:V =5.0V
DSS DS
5
3
1
0.7
0.5
50
50
50
70 100
300
500
1k
1k
1k
0
40
80
120
160
(mV)
200
240
DRAIN CURRENT I
(µA)
INPUT VOLTAGE V
DSS
IN
G vV - IDSS
THD - IDSS
50
30
2
0
-2
-4
-6
10
7
G V :V =4.5V
v
CC
1.5V
THD : V
V
=4.5V
CC
=30mV
V
=10mV
in
in
f=1kHz
:V =5.0V
5
3
f=1kHz
: V =5.0V
DS
I
DSS DS
I
DSS
70 100
300
500
50
70 100
DRAIN C
300
DSS
500
(µA)
1k
DRAIN CURRENT I
(µA)
URRENT I
DSS
Z i - I DSS
Z o - IDSS
36
34
32
30
28
26
700
600
500
400
300
200
Z
:V =4.5V
CC
Z
:V =4.5V
CC
i
o
V
=10mV
V
=10mV
in
in
f=1kHz
:V
f=1kHz
I :V =5.0V
DSS
I
=5.0V
DS
DS
DSS
70 100
300
DSS
500
( A)
50
70 100
DRAIN CURRENT I
300
DSS
500
(µA)
1k
DRAIN CURRENT I
2002. 8. 7
Revision No : 3
3/3
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