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KTK596S [KEC]

N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE); N沟道结FIFLD EFFFCT晶体管（电容麦克风）
KTK596S
型号： KTK596S
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE)
N沟道结FIFLD EFFFCT晶体管（电容麦克风）

晶体 晶体管
文件： 总5页 (文件大小：49K)
中文：  中文翻译
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KTK596S  
SEMICONDUCTOR  
N CHANNEL JUNCTION FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
CONDENSER MICROPHONE APPLICATION.  
FEATURES  
E
L
B
L
Expecially Suited for Use in Audio, Telephone.  
Capacitor Microphones.  
DIM MILLIMETERS  
_
+
2.93 0.20  
A
B
C
D
E
1.30+0.20/-0.15  
1.30 MAX  
0.45+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
Excellent Voltage Characteristics.  
Excellent Transient Characteristics.  
2
3
1
G
H
J
0.95  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
K
L
P
P
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
SYMBOL  
RATING  
-20  
UNIT  
V
VGDO  
IG  
M
Gate-Drain Voltage  
Gate Current  
10  
mA  
mA  
mW  
1. SOURCE  
2. DRAIN  
3. GATE  
ID  
Drain Current  
1
PD  
Drain Power Dissipation  
Junction Temperature  
Storage Temperature Range  
150  
Tj  
150  
Tstg  
-55 150  
SOT-23  
Marking  
I
Rank  
DSS  
Lot No.  
Type Name  
F
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Gate-Drain Breakdown Voltage  
Gate-Source Cut-off Voltage  
Drain Current  
SYMBOL  
V(BR)GDO  
VGS(OFF)  
IDSS (Note)  
| yfs |  
TEST CONDITION  
MIN.  
TYP.  
-
MAX.  
UNIT  
V
IG=-100 A  
-20  
-
-
-1.5  
320  
-
VDS=5V, ID=1 A  
-0.6  
-
V
VDS=5V, VGS=0  
150  
0.4  
-
A
VDS=5V, VGS=0, f=1kHz  
VDS=5V, VGS=0, f=1MHz  
VDS=5V, VGS=0, f=1MHz  
Foward Transfer Admittance  
Input Capacitance  
1.2  
3.5  
0.65  
mS  
pF  
pF  
Ciss  
-
Crss  
Reverse Transfer Capacitance  
-
-
Note : IDSS Classification Y(1) : 150~240, GR(2) : 210~320  
2002. 9. 17  
Revision No : 3  
1/5  
KTK596S  
ELECTRICAL CHARACTERISTICS  
(Ta=25 , VCC=4.5V, RL=1k , Cin=15pF, See Specified Test Circuit.)  
CHARACTERISTIC  
Voltage Gain  
SYMBOL  
GV  
TEST CONDITION  
Vin=10mV, f=1kHz  
MIN.  
TYP.  
MAX.  
-
UNIT  
dB  
-
-
-3.0  
Reduced Voltage Characteristic  
Frequency Characteristic  
Input Resistance  
GVV  
GVF  
Vin=10mV, f=1kHz VCC=4.5V 1.5V  
f=1kHz 110Hz  
f=1kHz  
-1.2  
-4.0  
-1.0  
-
dB  
-
-
-
dB  
Zin  
25  
-
M
ZO  
Output Resistance  
f=1kHz  
-
700  
Vin=30mV, f=1kHz  
Vin=0, A curve  
Total Harmonic Distortion  
Output Noise Voltage  
THD  
VNO  
-
1.0  
-
%
-
-110  
dB  
SPECIFIED TEST CIRCUIT  
Voltage gain.  
Frequency Characteristic.  
Distortion.  
Reduced Voltage Characteristic.  
1kΩ  
V
CC  
=4.5V  
V
CC  
=1.5V  
33uF  
15pF  
A
B
V
THD  
VTVM  
1kΩ  
OSC  
For Output  
Impedance  
2002. 9. 17  
Revision No : 3  
2/5  
KTK596S  
ID - VDS  
ID - VGS  
300  
250  
200  
150  
100  
50  
350  
300  
V
=5V  
I
=200µA  
DS  
DSS  
V
=0  
GS  
250  
200  
V
=-0.1V  
GS  
150  
100  
V
GS  
=-0.2V  
=-0.3V  
50  
0
V
=-0.4V  
6
V
GS  
GS  
0
0
100  
1
1
2
3
4
5
7
8
9
10  
-0.7 -0.6  
-0.5 -0.4  
-0.3 -0.2  
-0.1  
(V)  
0
DRAIN-SOURCE VOLTAGE V  
(V)  
GATE-SOURCE VOLTAGE V  
GS  
DS  
yfs - I DSS  
VGS(off) - IDSS  
3
1
-1  
V
=5V  
=0V  
DS  
V
I
=5V  
DS  
=1µA  
V
GS  
D
f=1kHz  
-0.5  
-0.3  
0.5  
0.3  
-0.1  
200  
300  
(µA)  
400 500  
100  
200  
300  
(µA)  
400 500  
DRAIN CURRENT I  
DRAIN CURRENT I  
DSS  
DSS  
Ciss - VDS  
Crss - VDS  
10  
3
1
V
GS  
=0  
V
=0  
GS  
f=1MHz  
f=1MHz  
5
3
0.5  
0.3  
1
3
5
10  
20  
1
3
5
10  
20  
DRAIN-SOURCE VOLTAGE V  
(V)  
DRAIN-SOURCE VOLTAGE V  
(V)  
DS  
DS  
2002. 9. 17  
Revision No : 3  
3/5  
KTK596S  
GV - IDSS  
GVV - IDSS  
2
0
2
0
G
I
: V =4.5V  
CC  
V
V
in  
=10mV  
R =1.0kΩ  
L
f=1kHz  
: V =5.0V  
DS  
-2  
DSS  
-4  
-2  
-4  
-6  
G
I
: V =4.5V  
CC  
1.5V  
VV  
-6  
V
in  
=10mV  
f=1kHz  
-8  
: V =5.0V  
DS  
DSS  
-10  
100  
200  
300  
(µA)  
400 500  
100  
200  
DRAIN CURRENT I  
300  
400 500  
DRAIN CURRENT I  
(µA)  
DSS  
DSS  
THD - IDSS  
ZIN - IDSS  
5
3
36  
34  
32  
Z
: V =4.5V  
CC  
THD : V =4.5V  
CC  
IN  
V
=10mV  
V
=30mV  
in  
f=1kHz  
: V =5.0V  
in  
f=1kHz  
: V =5.0V  
I
I
DSS  
DS  
DSS  
DS  
30  
28  
26  
1
0.5  
0.3  
100  
200  
DRAIN CURRENT I  
300  
(µA)  
400 500  
100  
200  
300  
(µA)  
400 500  
DRAIN CURRENT I  
DSS  
DSS  
ZO - IDSS  
VNO - IDSS  
700  
600  
500  
400  
300  
-112  
-114  
-116  
Z
O
: V =4.5V  
CC  
V
NO  
: V =4.5V  
CC  
V
in  
=10mV  
V =0, A curve  
in  
R =1.0kΩ  
L
f=1kHz  
I
: V =5.0V  
DS  
I
: V =5.0V  
DS  
DSS  
DSS  
-118  
-120  
100  
200  
300  
(µA)  
400 500  
100  
200  
300  
(µA)  
400 500  
DRAIN CURRENT I  
DRAIN CURRENT I  
DSS  
DSS  
2002. 9. 17  
Revision No : 3  
4/5  
KTK596S  
THD - VIN  
PD - Ta  
30  
10  
200  
150  
100  
50  
THD : V =4.5V  
CC  
f=1kHz  
I
: V =5.0V  
DS  
DSS  
5
3
1
0.5  
0
0
40  
80  
120  
160  
(mV)  
200  
0
25  
50  
75  
100  
125  
150  
175  
INPUT VOLTAGE V  
IN  
AMBIENT TEMPERATURE Ta ( C)  
2002. 9. 17  
Revision No : 3  
5/5  

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