KTK597E [KEC]
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE); N沟道结FIFLD EFFFCT晶体管(电容麦克风)型号: | KTK597E |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE) |
文件: | 总5页 (文件大小:47K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KTK597E
SEMICONDUCTOR
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
CONDENSER MICROPHONE APPLICATION.
FEATURES
E
B
Expecially Suited for Use in Audio, Telephone.
Capacitor Microphones.
MILLIMETERS
_
DIM
A
+
1.60 0.10
D
_
+
0.85 0.10
Excellent Voltage Characteristics.
Excellent Transient Characteristics.
2
1
B
_
+
0.70 0.10
C
D
E
3
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
G
H
0.50
_
0.13+0.05
J
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
J
SYMBOL
RATING
-20
UNIT
V
VGDO
IG
Gate-Drain Voltage
Gate Current
1. SOURCE
10
mA
mA
mW
2. DRAIN
3. GATE
ID
Drain Current
1
PD
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
100
Tj
150
Tstg
-55 150
ESM
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
SYMBOL
V(BR)GDO
VGS(OFF)
IDSS (Note)
| yfs |
TEST CONDITION
MIN.
TYP.
-
MAX.
UNIT
V
IG=-100 A
-20
-
-
-1.5
320
-
VDS=5V, ID=1 A
-0.6
-
V
VDS=5V, VGS=0
150
0.4
-
A
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
Foward Transfer Admittance
Input Capacitance
1.2
3.5
0.65
mS
pF
pF
Ciss
-
Crss
Reverse Transfer Capacitance
-
-
Note : IDSS Classification Y(1):150~240, GR(2):210~320
Marking
I
Rank
DSS
Type Name
F
2002. 9. 17
Revision No : 2
1/5
KTK597E
ELECTRICAL CHARACTERISTICS
(Ta=25 , VCC=4.5V, RL=1k , Cin=15pF, See Specified Test Circuit.)
CHARACTERISTIC
Voltage Gain
SYMBOL
GV
TEST CONDITION
Vin=10mV, f=1kHz
MIN.
TYP.
MAX.
-
UNIT
dB
-
-
-3.0
Reduced Voltage Characteristic
Frequency Characteristic
Input Resistance
GVV
GVF
Vin=10mV, f=1kHz VCC=4.5V 1.5V
f=1kHz 110Hz
f=1kHz
-1.2
-4.0
-1.0
-
dB
-
-
-
dB
Zin
25
-
M
ZO
Output Resistance
f=1kHz
-
700
Vin=30mV, f=1kHz
Vin=0, A curve
Total Harmonic Distortion
Output Noise Voltage
THD
VNO
-
1.0
-
%
-
-110
dB
SPECIFIED TEST CIRCUIT
Voltage gain.
Frequency Characteristic.
Distortion.
Reduced Voltage Characteristic.
1kΩ
V
CC
=4.5V
V
CC
=1.5V
33uF
15pF
A
B
V
THD
VTVM
1kΩ
OSC
For Output
Impedance
2002. 9. 17
Revision No : 2
2/5
KTK597E
ID - VDS
ID - VGS
300
250
200
150
100
50
350
300
V
=5V
I
=200µA
DS
DSS
V
=0
GS
250
200
V
=-0.1V
GS
150
100
V
GS
=-0.2V
=-0.3V
50
0
V
=-0.4V
6
V
GS
GS
0
0
100
1
1
2
3
4
5
7
8
9
10
-0.7 -0.6
-0.5 -0.4
-0.3 -0.2
-0.1
(V)
0
DRAIN-SOURCE VOLTAGE V
(V)
GATE-SOURCE VOLTAGE V
GS
DS
yfs - I DSS
VGS(off) - IDSS
3
1
-1
V
=5V
=0V
DS
V
I
=5V
DS
=1µA
V
GS
D
f=1kHz
-0.5
-0.3
0.5
0.3
-0.1
200
300
(µA)
400 500
100
200
300
(µA)
400 500
DRAIN CURRENT I
DRAIN CURRENT I
DSS
DSS
Ciss - VDS
Crss - VDS
10
3
1
V
GS
=0
V
=0
GS
f=1MHz
f=1MHz
5
3
0.5
0.3
1
3
5
10
20
1
3
5
10
20
DRAIN-SOURCE VOLTAGE V
(V)
DRAIN-SOURCE VOLTAGE V
(V)
DS
DS
2002. 9. 17
Revision No : 2
3/5
KTK597E
GV - IDSS
GVV - IDSS
2
0
2
0
G
I
: V =4.5V
CC
V
V
in
=10mV
R =1.0kΩ
L
f=1kHz
: V =5.0V
DS
-2
DSS
-4
-2
-4
-6
G
I
: V =4.5V
CC
1.5V
VV
-6
V
in
=10mV
f=1kHz
-8
: V =5.0V
DS
DSS
-10
100
200
300
(µA)
400 500
100
200
DRAIN CURRENT I
300
400 500
DRAIN CURRENT I
(µA)
DSS
DSS
THD - IDSS
ZIN - IDSS
5
3
36
34
32
Z
: V =4.5V
CC
THD : V =4.5V
CC
IN
V
=10mV
V
=30mV
in
f=1kHz
: V =5.0V
in
f=1kHz
: V =5.0V
I
I
DSS
DS
DSS
DS
30
28
26
1
0.5
0.3
100
200
DRAIN CURRENT I
300
(µA)
400 500
100
200
300
(µA)
400 500
DRAIN CURRENT I
DSS
DSS
ZO - IDSS
VNO - IDSS
700
600
500
400
300
-112
-114
-116
Z
O
: V =4.5V
CC
V
NO
: V =4.5V
CC
V
in
=10mV
V =0, A curve
in
R =1.0kΩ
L
f=1kHz
I
: V =5.0V
DS
I
: V =5.0V
DS
DSS
DSS
-118
-120
100
200
300
(µA)
400 500
100
200
300
(µA)
400 500
DRAIN CURRENT I
DRAIN CURRENT I
DSS
DSS
2002. 9. 17
Revision No : 2
4/5
KTK597E
THD - VIN
PD - Ta
30
10
175
150
120
100
75
THD : V =4.5V
CC
f=1kHz
I
: V =5.0V
DS
DSS
5
3
50
1
25
0.5
0
0
40
80
120
160
(mV)
200
0
25
50
75
100
125
150
175
INPUT VOLTAGE V
IN
AMBIENT TEMPERATURE Ta ( C)
2002. 9. 17
Revision No : 2
5/5
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