KTK5134S [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH); N沟道MOS场效应晶体管（超高速开关，模拟开关）
| 型号： | KTK5134S |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) |
| 文件： | 总3页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTK5134S
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
L
B
L
FEATURES
DIM
A
MILLIMETERS
ᴌ2.5 Gate Drive.
_
+
2.93 0.20
B
C
D
E
1.30+0.20/-0.15
1.30 MAX
ᴌLow Threshold Voltage : Vth=0.5ᴕ1.5V.
ᴌHigh Speed.
ᴌSmall Package.
2
3
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
1
G
H
J
0.95
0.13+0.10/-0.05
ᴌEnhancement-Mode.
K
L
0.00 ~ 0.10
0.55
P
P
0.20 MIN
1.00+0.20/-0.10
7
M
N
P
MAXIMUM RATING (Ta=25ᴱ)
M
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
VDS
VGSS
ID
RATING
30
UNIT
V
1. SOURCE
2. GATE
Gate-Source Voltage
DC Drain Current
V
ᴦ20
200
3. DRAIN
mA
mW
ᴱ
PD
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
200
SOT-23
Tch
150
Tstg
-55ᴕ150
ᴱ
EQUIVALENT CIRCUIT
D
Marking
Lot No.
G
Type Name
KD
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Gate Leakage Current
SYMBOL
IGSS
TEST CONDITION
MIN.
TYP. MAX. UNIT
VGS=ᴦ16V, VDS=0V
ID=100ỌA, VGS=0V
-
-
-
ᴦ1
ỌA
V
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Drain Cut-off Current
30
-
1
1.5
-
VDS=30V, VGS=0V
-
-
ỌA
V
Vth
VDS=3V, ID=0.1mA
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
0.5
-
|Yfs|
VDS=3V, ID=50mA
100
-
mS
RDS(ON)
Ciss
ID=50mA, VGS=2.5V
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
-
-
-
-
-
-
1.2
70
23
58
60
120
2
-
ή
pF
pF
pF
nS
nS
Crss
Reverse Transfer Capacitance
Output Capacitance
-
Coss
-
ton
Turn-on Time
Turn-off Time
-
Switching Time
VDD=3V, ID=10mA, VGS=0ᴕ2.5V
toff
-
2001. 10. 29
Revision No : 0
1/3
KTK5134S
ID - VDS
(LOW VOLTAGE REGION)
ID - VDS
0.2
0.1
0
0.2
0.1
0
2.5V
2.5V
COMMON
SOURCE
Ta=25 C
COMMON SOURCE
Ta=25 C
1.9V
1.9V
1.8V
1.8V
1.7V
1.7V
1.6V
1.5V
1.6V
1.5V
V
=1.4V
V
GS
=1.4V
GS
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
(V)
2.0
DRAIN-SOURCE VOLTAGE V
(V)
DRAIN-SOURCE VOLTAGE V
DS
DS
ID - VGS
IDR - VDS
1
1K
300
100
30
COMMON
SOURCE
DS
COMMON
SOURCE
0.5
0.3
V
=3V
V
=0
GS
Ta=25 C
D
10
3
0.1
Ta=25 C
Ta=-25 C
I
G
DR
0.05
0.03
1
S
0.3
0.01
0.1
0
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
-1.2
0
1
2
3
4
5
GATE-SOURCE VOTAGE V
(V)
DRAIN-SOURCE VOTAGE V
GS
DS
C - VDS
Yfs - ID
1K
300
100
COMMON SOURCE
=3V
V
DS
Ta=25 C
500
300
C
C
iss
50
30
oss
COMMON EMITTER
=0
f=1MHz
Ta=25 C
V
GS
C
rss
10
5
100
0.1
0.3 0.5 1.0
3.0 5.0 10
(V)
30
10
30
50
100
300 500
DRAIN-SOURCE VOLTAGE V
DRAIN CURRENT I (mA)
D
DS
2001. 10. 29
Revision No : 0
2/3
KTK5134S
VDS(ON) - ID
t - ID
1K
1K
COMMON SOURCE
=2.5V
500
300
V
DS
Ta=25 C
500
300
t
off
t
100
t
f
on
r
100
50
30
t
V
=3V
50
30
DD
I
D
V
OUT
<
D.U. 1%
V
=
2.5V
V
IN
:t , t < 5ns
r
f
IN
(Z
0
10µs
10
=50Ω)
OUT
COMMON SOURCE
Ta=25 C
V
DD
5
3
10
10
30
50
100
300 500
1
3
5
10
30 50
100
DRAIN CURRENT I (mA)
D
DRAIN CURRENT I (mA)
D
PD - Ta
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
SWITCHING TIME TEST CIRCUIT
2.5V
0
I
D
V
V
=3V
90%
OUT
DD
V
IN
2.5V
0
<
D.U. 1%
=
V
IN
10%
V
:t , t < 5ns
r
IN
f
V
DD
10µs
(Z
=50Ω)
10%
OUT
V
V
IN
OUT
COMMON SOURCE
Ta=25 C
90%
V
(ON)
DS
t
V
t
f
DD
r
t
t
on
off
2001. 10. 29
Revision No : 0
3/3
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