KTK5162S [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH); N沟道MOS场效应晶体管（超高速开关，模拟开关）
| 型号： | KTK5162S |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) |
| 文件： | 总3页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTK5162S
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
L
B
L
EATURES
DIM
A
MILLIMETERS
ᴌ2.5 Gate Drive.
_
+
2.93 0.20
B
C
D
E
1.30+0.20/-0.15
1.30 MAX
ᴌLow Threshold Voltage : Vth=0.5ᴕ1.5V.
ᴌHigh Speed.
ᴌSmall Package.
2
3
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
1
G
H
J
0.95
0.13+0.10/-0.05
ᴌEnhancement-Mode.
K
L
0.00 ~ 0.10
0.55
P
P
0.20 MIN
1.00+0.20/-0.10
7
M
N
P
MAXIMUM RATINGS (Ta=25ᴱ)
M
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
VDS
VGSS
ID
RATING
60
UNIT
V
1. SOURCE
2. GATE
Gate-Source Voltage
DC Drain Current
V
ᴦ20
100
3. DRAIN
mA
mW
ᴱ
PD
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
200
SOT-23
Tch
150
Tstg
-55ᴕ150
ᴱ
EQUIVALENT CIRCUIT
D
Marking
Lot No.
G
Type Name
KF
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Gate Leakage Current
SYMBOL
IGSS
TEST CONDITION
MIN.
TYP. MAX. UNIT
VGS=ᴦ16V, VDS=0V
ID=100ỌA, VGS=0V
-
60
-
-
-
ᴦ1
ỌA
V
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Drain Cut-off Current
-
1
VDS=60V, VGS=0V
-
ỌA
V
Vth
VDS=3V, ID=0.1mA
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
0.5
85
-
-
1.5
-
|Yfs|
VDS=10V, ID=50mA
120
22
6.2
1.5
4.4
10
105
mS
RDS(ON)
Ciss
ID=10mA, VGS=2.5V
40
-
ή
pF
pF
pF
nS
nS
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
-
Crss
Reverse Transfer Capacitance
Output Capacitance
-
-
Coss
-
-
ton
Turn-on Time
Turn-off Time
-
-
Switching Time
VDD=25V, ID=50mA, VGS=0ᴕ2.5V
toff
-
-
2001. 10. 29
Revision No : 0
1/3
KTK5162S
ID - VGS
(LOW VOLTAGE REGION)
ID - VDS
0.20
0.10
0.08
0.06
0.04
0.02
0
COMMON SOURCE
Ta=25 C
COMMON SOURCE
=10V
0.18
0.16
0.14
0.12
V
SD
0.10
0.08
0.06
0.04
0.02
0
2.5V
V
=2.0V
GS
0
0.2
0.4
0.6
0.8
(V)
1.0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
(V)
DS
GS
Yfs - ID
I F - VSD
0.3
0.1
1
COMMON SOURCE
=0
COMMON SOURCE
V
GS
V
=3V
DS
0.5
0.3
0.05
0.03
0.1
0.05
0.03
0.01
0.01
0.03 0.05
0.1
0.3
0.4 0.5
0.6 0.7 0.8 0.9
1.0 1.1 1.2
(V)
DRAIN CURRENT I (A)
D
DIODE FORWARD VOTAGE V
SD
C - VDS
RDS(ON) - I D
30
50
30
COMMON SOURCE
=0
f=1MHz
Ta=25 C
COMMON SOURCE
GS
Ta=25 C
V
V
=2.5V
GS
10
C
iss
5
3
Coss
10
5
C
rss
1
0.5
0.3 0.5
1
3
5
10
30
0
5
10 15 20 25 30 35 40 45 50
DRAIN-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (mA)
D
DS
2001. 10. 29
Revision No : 0
2/3
KTK5162S
PD - Ta
t - ID
350
1K
V
=25V
=10V
DD
V
500
300
GS
300
250
200
150
100
50
t
off
100
t
f
50
30
t
r
10
5
t
on
0
0.01
0.03
0.05
0.1
0
20
40
60
80 100 120 140 160
DRAIN CURRENT I (A)
AMBIENT TEMPERATURE Ta ( C)
D
SWITCHING TIME TEST CIRCUIT
V
=25V
DD
I
=500mA
D
R
=500Ω
L
V
IN
V
D
OUT
PW=10µs
<
D.U. 1%
=
G
V
IN
10V
0V
KTK5162S
P.G
50Ω
S
2001. 10. 29
Revision No : 0
3/3
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