KTK5134S_12 [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR; N沟道MOS场效应
| 型号： | KTK5134S_12 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总3页 (文件大小：751K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTK5134S
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
L
B
L
FEATURES
DIM MILLIMETERS
_
+
A
B
C
D
E
2.93 0.20
· 2.5 Gate Drive.
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
· Low Threshold Voltage : Vth=0.5∼ 1.5V.
· High Speed.
2
3
1
G
H
J
· Small Package.
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
· Enhancement-Mode.
K
L
Q
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
Q
0.1 MAX
MAXIMUM RATING (Ta=25℃)
M
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
VDS
VGSS
ID
RATING
30
UNIT
V
1. SOURCE
2. GATE
3. DRAIN
Gate-Source Voltage
DC Drain Current
V
±20
200
mA
mW
℃
PD
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
200
SOT-23
Tch
150
Tstg
-55∼ 150
℃
EQUIVALENT CIRCUIT
D
Marking
Lot No.
G
Type Name
KD
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Gate Leakage Current
SYMBOL
IGSS
TEST CONDITION
MIN.
TYP. MAX. UNIT
VGS=±16V, VDS=0V
ID=100μA, VGS=0V
-
-
-
±1
μA
V
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Drain Cut-off Current
30
-
1
1.5
-
VDS=30V, VGS=0V
-
-
μA
V
Vth
VDS=3V, ID=0.1mA
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
0.5
-
|Yfs|
VDS=3V, ID=50mA
100
-
mS
RDS(ON)
Ciss
ID=50mA, VGS=2.5V
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
-
-
-
-
-
-
1.2
70
23
58
60
120
2
-
Ω
pF
pF
pF
nS
nS
Crss
Reverse Transfer Capacitance
Output Capacitance
-
Coss
-
ton
Turn-on Time
Turn-off Time
-
Switching Time
VDD=3V, ID=10mA, VGS=0∼ 2.5V
toff
-
2001. 10. 29
Revision No : 0
1/3
KTK5134S
2001. 10. 29
Revision No : 0
2/3
KTK5134S
2001. 10. 29
Revision No : 0
3/3
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