IXGT15N120B [IXYS]

HiPerFAST IGBT; HiPerFAST IGBT


型号：	IXGT15N120B
厂家：	IXYS CORPORATION
描述：	HiPerFAST IGBT HiPerFAST IGBT 双极性晶体管
文件：	总4页 (文件大小：172K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFAST^TMIGBT

V_CES= 1200 V

IXGH 15N120B

IXGT 15N120B

I_C25

30 A

V_CE(sat)= 3.2 V

t_fi(typ)= 160 ns

TO-268(IXGT)

Symbol

TestConditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

1200

V_GES

V_GEM

Continuous

Transient

±20

±30

C (TAB)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1 ms

TO-247AD(IXGH)

SSOA

= 15 V, T_VJ= 125°C, R_G= 10 Ω

= 40

(RBSOA)

C^Gla^Emped inductive load

@ 0^C.8^MV_CES

150

P_C

T_C= 25°C

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate,

C = Collector,

TAB = Collector

E = Emitter,

Maximum Lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Maximum Tab temperature for soldering SMD devices for 10 s

260

°C

Features

International standard packages

JEDEC TO-268 surface and

JEDEC TO-247 AD

Low switching losses, low V_(sat)

MOS Gate turn-on

- drive simplicity

M_d

Mounting torque (M3)

1.13/10Nm/lb.in.

Weight

TO-247 AD

TO-268

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

BV_CES

V_GE(th)

= 250 µA, V_GE= 0 V

1200

2.5

I^C_C= 250 µA, V = V_GE

Switched-mode and resonant-mode

power supplies

I_CES

V_CE= V

T = 25°C

T_J^J= 125°C

100

µA

V_GE= 0^CV^ES

3.5 mA

Advantages

High power density

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

3.2

Suitable for surface mounting

V_CE(sat)

I_C= I_C90, V_GE= 15 V

Easy to mount with 1 screw,

(isolated mounting screw hole)

T_J= 125°C

2.5

98659-A (7-02)

IXGH 15N120B

IXGT 15N120B

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

TO-247 AD Outline

I_C= I_C90; V = 10 V,

Pulse test, t ^C≤^E300 µs, duty cycle ≤ 2 %

∅ P

C_ies

C_oes

C_res

1720

V_CE= 25 V, V_GE= 0 V, f = 1 MHz

I_C= I_C90, V_GE= 15 V, V_CE= 0.5 V_CES

Q_g

Q_ge

Q_gc

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A¹₂

4.7

2.2

1.0

1.65

2.87

5.3

2.54

2.6

1.4

2.13

3.12

.185 .209

.087 .102

.059 .098

.040 .055

.065 .084

.113 .123

.016 .031

.819 .845

.610 .640

t_d(on)

t_ri

t_d(off)

t_fi

180

160

1.75

280 ns

320 ns

3.0 mJ

Inductive load, T_J= 25°C

I_C= I_C90, V = 15 V

_CE= 0.8 ^GV^E_CES, R_G= R_off= 10 Ω

b¹₂

Remarks: Switching times may

increase for V_CE(Clamp) > 0.8 • V_CES

higher T_Jor increased R_G

20.80 21.46

E_off

15.75 16.26

5.20

5.72 0.205 0.225

t_d(on)

t_ri

E_on

t_d(off)

t_fi

0.60

300

360

19.81 20.32

.780 .800

Inductive load, T_J= 125°C

I_C= I_C90, V_GE= 15 V

V_CE= 0.8 V_CES, R_G= R_off= 10 Ω

4.50

3.65

.177

∅P 3.55

.140 .144

5.89

4.32

6.40 0.232 0.252

5.49

.170 .216

6.15 BSC

242 BSC

Remarks: Switching times may

increase for V_CE(Clamp) > 0.8 • V_CES

higher T_Jor increased R_G

E_off

3.5

TO-268 Outline

R_thJC

R_thCK

0.83 K/W

K/W

(TO-247)

0.25

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

4.9

2.7

.02

5.1

2.9

.25

.193 .201

.106 .114

.001 .010

Min Recommended Footprint

A₁

A₂

1.15

1.9

1.45

.045 .057

b₂

2.1

.75

.83

.65

.016 .026

13.80 14.00

.543 .551

.624 .632

.524 .535

15.85 16.05

E₁

13.3

13.6

5.45 BSC

.215 BSC

.736 .752

.094 .106

18.70 19.10

2.40

1.20

2.70

1.40

.047 .055

1.00

1.15

.039 .045

.010 BSC

0.25 BSC

3.80

4.10

.150 .161

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

IXGH 15N120B

IXGT 15N120B

150

125

100

V_GE= 15V

T_J= 25^oC

T_J= 25^OC

13V

11V

_GS= 15V

13V

11V

V_CE- Volts

Fig.1. SaturationVoltageCharacteristics@25^oC

Fig.2. ExtendedOutputCharacteristics

1.6

T_J= 125^OC

V_GE= 15V

I_C= 30A

1.4

V_GS= 15V

13V

1.2

11V

I_C= 15A

I_C= 7.5A

1.0

0.8

0.6

0.4

-25

25 50 75 100 125 150

V_CE- Volts

T_J- Degrees C

Fig.3. SaturationVoltageCharacteristics@125^oC

Fig.4. TemperatureDependenceofVCE(sat)

10000

T_J= 125^oC

1000

100

T_J= 25^oC

T_J= -40^oC

10 15 20 25 30 35 40

V_GE- Volts

V_CE- Volts

IXG_15N120B-P1

Fig.5. AdmittanceCurves

Fig.6. CapacitanceCurves

IXGH 15N120B

IXGT 15N120B

T_J= 125°C

R_G= 10Ω

E_(OFF)

I_C= 30A

E_(OFF)

I_C= 15A

I_C= 7.5A

E_(OFF)

R_G- Ohms

I_C- Amperes

Fig. 7. Dependence of tfi and E_OFFon I_C.

Fig. 8. Dependence of tfi and E_OFFon R_G.

100

_C= 15A

V_CE= 600V

T_J= -55 to +125°C

R_G= 10Ω

dV/dt < 5V/ns

0.1

200

400

600

800 1000 1200

Q_g- nanocoulombs

V_CE- Volts

Fig. 9. Gate Charge

Fig.10. Turn-offSafeOperatingArea

0.1

D=0.5

D=0.2

D=0.1

D=0.05

D=0.02

D=0.01

0.01

0.001

Single pulse

0.0001

D = Duty Cycle

0.00001

0.001

0.01

0.1

Fig.11. TransientThermalResistance^{Pulse Width - Seconds}

IXGH15N120B-P2

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

IXGT15N120B [IXYS]

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