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IXGT16N170AH1 [IXYS]

High Voltage IGBT; 高压IGBT
IXGT16N170AH1
型号： IXGT16N170AH1
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

High Voltage IGBT
高压IGBT

晶体 晶体管 电动机控制 双极性晶体管 高压 栅
文件： 总2页 (文件大小：526K)
中文：  中文翻译
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Advance Technical Data  
IXGH/IXGT 16N170A  
IXGH/IXGT 16N170AH1  
VCES  
IC25  
= 1700 V  
16 A  
High Voltage  
IGBT  
=
VCE(sat) = 5.0 V  
tfi(typ)  
=
40 ns  
H1  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1700  
1700  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
C (TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
16  
8
40  
A
A
A
TO-247AD(IXGH)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 10Ω  
I
= 40  
A
CGlaE mped inductive load  
@ 0C.8M VCES  
10  
TAB)  
(RBSOA)  
G
C
E
tSC  
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω  
TC = 25°C  
µs  
G = Gate,  
C = Collector,  
TAB = Collector  
PC  
190  
W
E=Emitter,  
TJ  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TJM  
Tstg  
Md  
Features  
z
International standard packages  
JEDEC TO-268 and  
Mounting torque (M3)  
TO-247  
1.13/10Nm/lb.in.  
JEDEC TO-247 AD  
z
z
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10s  
300  
°C  
High current handling capability  
MOS Gate turn-on  
250  
°C  
- drive simplicity  
z
z
Weight  
TO-247  
TO-268  
6
4
g
Rugged NPT structure  
g
Molding epoxies meet UL 94 V-0  
flammability classification  
SONICTM fast recovery copack diode  
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Applications  
min. typ. max.  
z
Capacitor discharge & pulser circuits  
z
AC motor speed control  
BVCES  
VGE(th)  
I
= 250 µA, VGE = 0 V  
1700  
3.0  
V
ICC = 250 µA, V = VGE  
5.0  
V
z
DC servo and robot drives  
CE  
z
DC choppers  
z
ICES  
VCE = 0.8 • VCES  
16N170A  
50  
100  
750  
µA  
µA  
µA  
Uninterruptible power supplies (UPS)  
z
VGE = 0 V, Note 1  
16N170AH1  
Switched-mode and resonant-mode  
TJ = 125°C 16N170A  
power supplies  
16N170AH1  
1.5 mA  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100  
5.0  
nA  
Advantages  
z
High power density  
VCE(sat)  
4.0  
4.8  
V
V
z
Suitable for surface mounting  
Easy to mount with 1 screw,  
TJ = 125°C  
z
(isolated mounting screw hole)  
DS99235(10/04)  
© 2004 IXYS All rights reserved  
IXGH/IXGT 16N170A  
IXGH/IXGT 16N170AH1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = I ; VCE = 10 V  
Note 2 C25  
6
10  
S
∅ P  
Cies  
Coes  
1700  
83  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
16N170A  
16N170AH1 125  
Cres  
30  
pF  
e
Qg  
Qge  
Qgc  
65  
13  
24  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Min. Max.  
A
4.7  
2.2  
2.2  
1.0  
1.65  
2.87  
5.3  
2.54  
2.6  
1.4  
2.13  
3.12  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
A
A12  
td(on)  
tri  
td(off)  
tfi  
36  
57  
200  
40  
ns  
ns  
350 ns  
150 ns  
1.5 mJ  
Inductive load, TJ = 25°C  
IC = IC25, VGE = 15 V  
b
b
b12  
R = 10 Ω, VCE = 0.5 VCES  
C
D
E
.4  
.8  
NoG te 3  
20.80 21.46  
15.75 16.26  
Eoff  
0.9  
e
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
L
.780 .800  
.177  
.140 .144  
L1  
Inductive load, TJ = 125°C  
IC = IC25, VGE = 15 V  
∅P 3.55  
Q
R
S
3.65  
td(on)  
tri  
Eon  
38  
59  
1.5  
ns  
ns  
mJ  
mJ  
ns  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
5.49  
.170 .216  
242 BSC  
R = 10 Ω, VCE = 0.5 VCES  
NoG te 3  
16N170A  
16N170AH1 2.5  
200  
td(off)  
tfi  
TO-268 Outline  
55  
ns  
Eoff  
1.1  
mJ  
RthJC  
RthCK  
0.65 K/W  
K/W  
(TO-247)  
0.25  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol TestConditions  
VF  
IF = 20 A, VGE = 0 V  
2.5 2.95  
2.5  
V
V
Dim.  
Millimeter  
Inches  
TJ = 125°C  
Min.  
Max.  
Min. Max.  
IRM  
trr  
IF = 20 A; -diF/dt = 150 A/µs  
15  
80  
A
ns  
A
A
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
A1  
A2  
VGE = 0 V; VR = 1200 V  
b
1.15  
1.9  
.4  
1.45  
.045 .057  
IRM  
trr  
TJ = 125°C  
20  
b2  
2.1  
.75  
.83  
200  
ns  
C
.65  
.016 .026  
D
E
13.80 14.00  
.543 .551  
.624 .632  
.524 .535  
RthJC  
0.9 K/W  
15.85 16.05  
E1  
13.3  
13.6  
e
H
L
5.45 BSC  
.215 BSC  
.736 .752  
.094 .106  
Notes:1. Device must be heatsunk for high temperature leakage current  
measurements to avoid thermal runaway.  
18.70 19.10  
2.40  
1.20  
2.70  
1.40  
L1  
.047 .055  
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG.  
L2  
L3  
L4  
1.00  
1.15  
.039 .045  
.010 BSC  
0.25 BSC  
3.80  
4.10  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  

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