IXGT20N100 [IXYS]
IGBT; IGBT
| 型号： | IXGT20N100 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | IGBT |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXGH 20N100 VCES
IXGT 20N100 IC25
= 1000 V
40 A
IGBT
=
VCE(sat) = 3.0 V
tfi(typ)
= 280 ns
Preliminary data
Symbol
TestConditions
MaximumRatings
TO-268
(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
1000
1000
V
G
E
TJ = 25°C to 150°C; RGE = 1 MW
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
(TAB)
TO-247 AD (IXGH)
IC25
IC90
ICM
TC = 25°C
40
20
80
A
A
A
TC = 90°C
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 47 W
Clamped inductive load, L = 100 mH
ICM = 40
@ 0.8 VCES
A
G
C
E
C (TAB)
PC
TC = 25°C
150
W
TJ
-55 ... +150
150
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TJM
Tstg
-55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
°C
°C
Features
• Internationalstandardpackages
JEDEC TO-268 surface and
JEDEC TO-247 AD
Md
Mountingtorque(M3)
1.13/10 Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
• Highcurrenthandlingcapability
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switched-modeandresonant-mode
powersupplies
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
IC = 1 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
1000
2.5
V
V
5
• Capacitordischarge
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
250
1
mA
mA
Advantages
• High power density
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
• Suitableforsurfacemounting
• Easy to mount with 1 screw,
(isolatedmountingscrewhole)
VCE(sat)
IC = IC90, VGE = 15 V
2.2
3.0
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98620B(7/00)
1 - 2
IXGH 20N100
IXGT 20N100
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
12
16
90
S
A
IC(ON)
VGE = 10V, VCE = 10V
Cies
Coes
Cres
1750
100
38
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
73
13
26
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim. Millimeter
Inches
Min. Max. Min. Max.
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
30
30
ns
ns
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 47 W
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
350
280
3.5
700 ns
700 ns
8.0 mJ
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
E
F
4.32 5.49 0.170 0.216
,
5.4
6.2 0.212 0.244
Eoff
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
td(on)
tri
30
30
ns
ns
mJ
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 47 W
J
K
1.0
1.4 0.040 0.055
10.8 11.0 0.426 0.433
Eon
td(off)
tfi
0.65
700
520
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
N
1.5 2.49 0.087 0.102
ns
,
higher TJ or increased RG
TO-268AA (D3 PAK)
Eoff
6.5
mJ
RthJC
RthCK
0.83 K/W
K/W
(TO-247)
0.25
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Min. Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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