IXGT20N120BD1 [IXYS]
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN;
| 型号： | IXGT20N120BD1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN 栅 功率控制 晶体管 |
| 文件： | 总5页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage IGBT with Diode
VCES
IC25
= 1200 V
= 40 A
IXGH 20N120BD1
IXGT 20N120BD1
VCE(sat) = 3.4 V
tfi(typ)
= 160 ns
Preliminary Data Sheet
Symbol
TestConditions
Maximum Ratings
TO-247AD
(IXGH)
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
G
C
TAB
VGES
VGEM
Continuous
Transient
20
30
V
V
E
TO-268
(IXGT)
IC25
IC110
ICM
TC = 25°C
40
20
A
A
A
TC = 110°C
TC = 25°C, 1 ms
100
G
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 10 Ω
Clamped inductive load
ICM = 80
@0.8 VCES
A
E
C (TAB)
PC
TC = 25°C
190
W
G = Gate
C = Collector
TJ
-55 ... +150
150
°C
°C
°C
E = Emitter
TAB = Collector
TJM
Tstg
-55 ... +150
Features
Md
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
z International standard packages:
JEDEC TO-247AD & TO-268
z IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
260
6/4
°C
°C
g
Maximum tab temperature
soldering SMD devices for 10s
- Rice cookers
z MOS Gate turn-on
Weight
TO-247AD/TO-268
- drive simplicity
z Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Advantages
z Saves space (two devices in one
package)
Easy to mount with 1 screw
BVCES
VGE(th)
IC = 1 µA, VGE = 0 V
1200
2.5
V
V
z
IC = 250 µA, VCE = VGE
5.0
(isolated mounting screw hole)
Reduces assembly time and cost
z
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
150 µA
µA
50
IGES
VCE = 0 V, VGE = 20 V
100 nA
VCE(sat)
IC
= 20A, VGE = 15 V
2.9
2.8
3.4
V
V
Note 2
TJ=125°C
© 2003 IXYS All rights reserved
DS98985E(07/03)
IXGH 20N120BD1
IXGT 20N120BD1
TO-247 AD Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 20A; VCE = 10 V,
Note 2.
12
18
S
Cies
Coes
Cres
1700
105
39
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
72
12
27
nC
nC
nC
Qge
Qgc
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
25
15
ns
ns
Inductive load, TJ = 25°C
IC = 20 A; VGE = 15 V
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
VCE = 0.8 VCES; RG = Roff = 10 Ω
td(off)
150
280 ns
Note 1.
tfi
Eoff
160
2.1
320 ns
3.5 mJ
td(on)
tri
25
18
ns
ns
Inductive load, TJ = 125°C
IC = 20A; VGE = 15 V
Eon
td(off)
1.9
270
mJ
ns
VCE = 0.8 VCES; RG = Roff = 10 Ω
Note 1
tfi
Eoff
360
3.5
ns
mJ
RthJC
RthCK
0.65 K/W
K/W
TO-268 Outline
(TO-247)
0.25
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
VF
IF
IF = 10 A, VGE = 0 V
3.3
10
V
A
TC = 90°C
IRM
trr
IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V
VGE = 0 V; TJ = 125°C
14
120
A
ns
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
trr
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
40
ns
RthJC
2.5 K/W
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
Notes: 1.
2.
Switching times may increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG.
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
,
13.3
13.6
e
H
L
5.45 BSC
18.70 19.10
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
1.20
1.40
.047 .055
L2
L3
L4
1.00
0.25 BSC
3.80 4.10
1.15
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 20N120BD1
IXGT 20N120BD1
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
40
35
30
25
20
15
10
5
16 0
14 0
12 0
10 0
80
60
40
20
0
VG E = 15V
VGE = 15V
13V
11V
13 V
1 1V
9V
7V
9V
7V
5V
5V
0
1
0.5
3
1.5
2
2.5
3
3.5
4
4.5
5
0
2
4
6
8
VCE - Volts
10 12 14 16 18
VCE - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Temperature Dependence of VCE(sat)
40
35
30
25
20
15
10
5
1. 4
1. 3
1. 2
1. 1
1
VG E = 15V
13V
11V
VG E = 15V
I C = 40A
9V
7V
5V
I C = 20A
0.9
0.8
0.7
I C= 10A
0 25 50 75 100 125 150
0
1
1.5
2
2.5
3
VCE - Volts
3.5
4
4.5
5
-50 -25
TJ - Degrees Centigrade
Fig. 6. Transconductance
Fig. 5. Input Admittance
80
70
60
50
40
30
20
10
27
24
21
18
15
12
9
TJ = -40ºC
25ºC
125ºC
TJ= -40ºC
25ºC
125ºC
6
3
0
0
4
5
6
7
8
9
10
0
10
20 30 40 50 60 70 80
VGE - Volts
I C - Amperes
© 2003 IXYS All rights reserved
IXGH 20N120BD1
IXGT 20N120BD1
Fig. 8. Dependence of Eoff on IC
Fig. 7. Dependence of Eoff on RG
14
12
10
8
14
12
10
8
TJ = 125ºC
VGE = 15V
I C = 40A
VCE = 960V
TJ = 125ºC
VG E = 15V
VC E = 960V
I C = 20A
R G= 56 Ohms
6
R G= 5 Ohms
6
4
4
2
I C = 10A
50
0
2
0
10
20
30
40
60
10
15
20
25
I C - Amperes
30
35
40
R G - Ohms
Fig. 9. Dependence of Eoff on Temperature
Fig. 10. Gate Charge
16
15
12
9
Solid lines - RG = 56 Ohms
Dashed lines - RG = 5 Ohms
VGE = 15V
VCE = 600V
I C= 20A
I G= 10mA
14
12
10
8
VCE = 960V
I C = 40A
I C = 20A
6
6
4
3
2
I C = 10A
0
0
0
10
20 30
40 50 60 70 80
0
25
50
75
100
125
150
Q G - nanoCoulombs
TJ - Degrees Centigrade
Fig. 12. Maximum Transient Thermal Resistance
Fig. 11. Reverse-Bias Safe Operating Area
1
90
80
70
60
50
40
30
20
10
TJ = 125 C
º
RG = 10 Ohms
dV/dT < 10V/ns
0
0.1
100
300
500
700
900
1100 1300
1
10
100
1000
VCE - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 20N120BD1
IXGT 20N120BD1
70
A
5
60
A
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
µC
60
IF 50
40
50
4
3
2
1
0
Qr
IRM
40
30
20
10
0
TVJ=150°C
TVJ=100°C
TVJ= 25°C
IF= 60A
IF= 30A
IF= 15A
IF= 60A
IF= 30A
IF= 15A
30
20
10
0
A/µs
-diF/dt
0
1
2
3
VF
V
4
100
1000
0
200 400 600 1000
A/µs
-diF/dt
Fig. 13. Forward current IF versus VF
2.0
Fig. 14. Reverse recovery charge Qr
versus -diF/dt
Fig. 15. Peak reverse current IRM
versus -diF/dt
220
120
1.2
µs
TVJ= 100°C
TVJ= 100°C
VR = 600V
ns
IF = 30A
V
200
VFR
tfr
1.5
Kf
tfr
trr
80
40
0
0.8
VFR
180
160
140
120
IF= 60A
IF= 30A
IF= 15A
1.0
IRM
0.4
0.5
Qr
0.0
0.
A/µs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
°C
A/µs
diF/dt
TVJ
-diF/dt
Fig. 16. Dynamic parameters Qr, IRM
versus TVJ
Fig. 17. Recovery time trr versus -diF/dt
Fig. 18. Peak forward voltage VFR and
tfr versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
2
3
0.465
0.179
0.256
0.0052
0.0003
0.0397
0.1
ZthJC
0.01
DSEP 30-12A/DSEC 60-12A
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 19. Transient thermal resistance junction to case
© 2003 IXYS All rights reserved
相关型号：
IXGT24N60B
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-268AA, D3PAK-3
IXYS
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