IXGT22N170 [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXGT22N170 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Data
IXGH 22N170 VCES
IXGT 22N170 IC25
= 1700 V
40 A
High Voltage
IGBT
=
VCE(sat) = 3.3 V
tfi(typ)
= 290 ns
Symbol
TestConditions
Maximum Ratings
TO-268(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
1700
1700
V
TJ = 25°C to 150°C; RGE = 1 MΩ
V
G
VGES
VGEM
Continuous
Transient
20
30
V
V
E
C (TAB)
IC25
IC90
ICM
TC = 25°C
44
22
A
A
A
TO-247AD(IXGH)
TC = 90°C
TC = 25°C, 1 ms
130
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5 Ω
ICM = 50
@ 0.8 VCES
A
TAB)
Clamped inductive load
G
C
E
PC
TC = 25°C
210
W
G = Gate,
E=Emitter,
Features
C = Collector,
TAB = Collector
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
z International standard packages
JEDEC TO-268 and
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
°C
°C
JEDEC TO-247 AD
z High current handling capability
z MOS Gate turn-on
260
Md
Mounting torque (TO-247)
1.13/10
Nm/lb.in.7
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Weight
TO-247 AD
TO-268
6
4
g
g
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
BVCES
VGE(th)
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
1700
3.0
V
V
5.0
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
50
500
µA
µA
Advantages
z High power density
IGES
VCE = 0 V, VGE = 20 V
IC = IC90, VGE = 15 V
100
3.0
nA
V
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
VCE(sat)
TJ = 25°C
2.0
DS99325(02/05)
© 2005 IXYS All rights reserved
IXGH 22N170
IXGT 22N170
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
20
S
A
∅ P
IC(ON)
VGE = 10V, VCE = 10V
100
Cies
Coes
Cres
1900
96
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
26
e
Qg
85
13
26
nC
nC
nC
Dim.
Millimeter
Min.
Inches
Min. Max.
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
42
39
ns
ns
ns
ns
mJ
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
IC = IC25, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
TBD
TBD
TBD
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
20.80 21.46
15.75 16.26
,
Eoff
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
50
55
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Eon
td(off)
tfi
2.0
VCE = 0.8 VCES, RG = Roff = 5 Ω
TBD
TBD
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
TO-268 Outline
Eoff
TBD
mJ
RthJC
0.6 K/W
RthCK
(TO-247)
0.25
K/W
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
Min Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
13.6
e
H
L
5.45 BSC
18.70 19.10
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
1.20
1.40
.047 .055
L2
L3
L4
1.00
0.25 BSC
3.80 4.10
1.15
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
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