IXGT24N170 [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXGT24N170 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总2页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Data
IXGH 24N170 VCES
IXGT 24N170 IC25
= 1700 V
50 A
High Voltage
IGBT
=
VCE(sat) = 3.3 V
tfi(typ)
= 290 ns
Symbol
TestConditions
Maximum Ratings
TO-268(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
1700
V
V
G
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
C (TAB)
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
50
24
150
A
A
A
TO-247AD(IXGH)
SSOA
V
= 15 V, TVJ = 125°C, RG = 5 Ω
I
= 50
A
CGlaE mped inductive load
@ 0C.8M VCES
250
TAB)
(RBSOA)
G
C
E
PC
TC = 25°C
W
G = Gate,
E=Emitter,
Features
C = Collector,
TAB = Collector
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
International standard packages
JEDEC TO-268 and
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
JEDEC TO-247 AD
z
z
Maximum Tab temperature for soldering SMD devices for 10 s
260
°C
High current handling capability
MOS Gate turn-on
Md
Mounting torque (M3)
1.13/10Nm/lb.in.
- drive simplicity
z
z
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Weight
TO-247 AD
TO-268
6
4
g
g
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
BVCES
VGE(th)
I
= 250 µA, VGE = 0 V
1700
3.0
V
z
ICC = 250 µA, VCE = VGE
5.0
V
Switched-mode and resonant-mode
power supplies
ICES
VCE = 0.8 • VCES
VGE = 0 V
T = 25°C
TJJ = 125°C
50
µA
µA
Advantages
500
z
High power density
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
z
Suitable for surface mounting
z
VCE(sat)
IC = IC90, VGE = 15 V
T = 25°C
TJJ = 125°C
2.5
3.0
3.3
V
V
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98994(01/03)
© 2003 IXYS All rights reserved
IXGH 24N170
IXGT 24N170
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
gfs
IC = IC90; V = 10 V,
18
25
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
P
IC(ON)
VGE = 10V, VCE = 10V
100
A
Cies
Coes
Cres
2400
120
33
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
e
Qg
Qge
Qgc
106
18
32
nC
nC
nC
Dim.
Millimeter
Min.
Inches
Min. Max.
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
42
39
200
250
8
ns
ns
400 ns
500 ns
12 mJ
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
IC = IC25, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Remarks: Switching times may
20.80 21.46
15.75 16.26
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
Eon
td(off)
tfi
50
55
2.0
200
360
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
TO-268 Outline
Eoff
12
mJ
RthJC
0.5 K/W
RthCK
(TO-247)
0.25
K/W
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
Min Recommended Footprint
A
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
A1
A2
b
1.15
1.9
.4
1.45
.045 .057
b2
2.1
.75
.83
C
.65
.016 .026
D
E
13.80 14.00
.543 .551
.624 .632
.524 .535
15.85 16.05
E1
13.3
13.6
e
H
L
5.45 BSC
.215 BSC
.736 .752
.094 .106
18.70 19.10
2.40
1.20
2.70
1.40
L1
.047 .055
L2
L3
L4
1.00
1.15
.039 .045
.010 BSC
0.25 BSC
3.80
4.10
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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