IXGT20N140C3H1 [IXYS]
GenX3 1400V IGBTs w/ Diode; GenX3 1400V的IGBT W /二极管
| 型号： | IXGT20N140C3H1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 1400V IGBTs w/ Diode |
| 文件： | 总2页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
GenX3TM 1400V IGBTs
w/ Diode
VCES = 1400V
IC100 = 20A
VCE(sat) ≤ 5.0V
tfi(typ) = 32ns
IXGH20N140C3H1
IXGT20N140C3H1
High-Speed PT IGBTs
for 20 - 50 kHz Switching
TO-247 (IXGH)
Symbol
Test Conditions
Maximum Ratings
G
VCES
VCGR
TJ = 25°C to 150°C
1400
1400
V
V
C
C (Tab)
E
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC100
TC = 25°C
TC = 100°C
42
20
A
A
TO-268 (IXGT)
ICM
TC = 25°C, 1ms
108
A
G
IA
EAS
TC = 25°C
TC = 25°C
20
400
A
mJ
E
C
C (Tab)
SSOA
(RBSOA)
VGE= 15V, TJ = 125°C, RG = 5Ω
Clamped Inductive Load
ICM = 40
A
VCE ≤ VCES
G = Gate
= Collector
E = Emitter
Tab = Collector
PC
TC = 25°C
250
W
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
Features
-55 ... +150
z Optimized for Low Switching Losses
z Square RBSOA
z High Avalanche Capability
z Anti-Parallel Ultra Fast Diode
z International Standard Packages
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
Md
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.0
V
z High Frequency Power Inverters
z UPS
VCE = VCES, VGE= 0V
100 μA
TJ = 125°C, Note 1
2.0 mA
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC
= IC100, VGE = 15V, Note 1
TJ = 125°C
4.0
3.5
5.0
V
V
DS100251(03/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXGH20N140C3H1
IXGT20N140C3H1
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = IC100, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
10
17
S
Cies
Coes
Cres
1790
145
50
pF
pF
pF
∅ P
1
2
3
Qg
88
18
30
nC
nC
nC
Qge
Qgc
IC = IC100, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
19
12
ns
ns
mJ
ns
ns
Inductive load, TJ = 25°C
Terminals: 1 - Gate
3 - Emitter
2 - Collector
IC = IC100, VGE = 15V
1.35
110
32
Dim.
Millimeter
Inches
Min. Max.
VCE = 0.5 • VCES, RG = 5Ω
Min. Max.
Note 2
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Eoff
0.44
0.80 mJ
td(on)
tri
Eon
td(off)
tfi
22
13
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Inductive load, TJ = 125°C
IC = IC100, VGE = 15V
2.33
144
380
1.64
mJ
ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
VCE = 0.5 • VCES, RG = 5Ω
20.80 21.46
15.75 16.26
ns
Note 2
e
5.20
5.72 0.205 0.225
Eoff
mJ
L
L1
19.81 20.32
4.50
.780 .800
.177
RthJC
RthCK
0.50 °C/W
°C/W
∅P 3.55
3.65
.140 .144
TO-247
0.21
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
TO-268 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 20A, VGE = 0V, Note 1
3.0
V
V
TJ = 125°C
2.8
19
IRM
A
IF = 20A, VGE = 0V,
-diF/dt = 750A/μs, VR = 800V
trr
70
ns
0.9 °C/W
Terminals: 1 - Gate
3 - Emitter
2 & 4 - Collector
RthJC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
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