IXGT20N120B [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXGT20N120B |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总5页 (文件大小：574K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES
IC25
= 1200 V
= 40 A
IXGH 20N120B
IXGT 20N120B
High Voltage IGBT
VCE(sat) = 3.4 V
tfi(typ)
= 160 ns
Preliminary Data Sheet
TO-268
(IXGT)
Symbol
TestConditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
1200
V
V
G
VGES
VGEM
Continuous
Transient
20
30
V
V
E
C(TAB)
TAB)
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
40
20
80
A
A
A
TO-247 AD (IXGH)
SSOA
V
= 15 V, TVJ = 125°C, RG = 10 Ω
I
= 80
A
(RBSOA)
CGlaE mped inductive load
@ 0C.8M VCES
190
G
C
E
PC
TC = 25°C
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate,
C = Collector,
TAB = Collector
E = Emitter,
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Maximum Tab temperature for soldering SMD devices for 10 s
260
°C
Features
z
High Voltage IGBT for resonant
power supplies
Md
Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in.
- Induction heating
Weight
TO-247 AD
TO-268
6
4
g
g
- Rice cookers
z
International standard packages
JEDEC TO-268 surface and
JEDEC TO-247 AD
z
z
Low switching losses, low V(sat)
MOS Gate turn-on
- drive simplicity
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Advantages
BVCES
VGE(th)
I
= 250 µA, VGE = 0 V
1200
2.5
V
ICC = 250 µA, V = VGE
5
V
z
High power density
CE
z
Suitable for surface mounting
z
ICES
VCE = VCES
TJ = 25°C
TJ = 125°C
50
µA
Easy to mount with 1 screw,
(isolated mounting screw hole)
IGES
VCE = 0 V, VGE = 20 V
IC = 20A, VGE = 15 V
100
nA
VCE(sat)
2.9
2.8
3.4
3.8
V
V
© 2003 IXYS All rights reserved
DS98986D(05/03)
IXGH 20N120B
IXGT 20N120B
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = 20A; VCE = 10 V,
12
18
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
∅ P
Cies
Coes
Cres
1700
95
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
35
Qg
Qge
Qgc
72
12
27
nC
nC
nC
e
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
td(on)
tri
td(off)
tfi
25
15
150
160
2.1
ns
ns
280 ns
320 ns
3.5 mJ
A
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
IC = 20 A, VGE = 15 V
b
VCE = 0.8 VCES, RG = Roff = 10 Ω
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Eoff
20.80 21.46
15.75 16.26
td(on)
tri
Eon
td(off)
tfi
25
18
0.9
270
360
ns
ns
mJ
ns
ns
e
5.20
5.72 0.205 0.225
L
19.81 20.32
4.50
.780 .800
.177
L1
Inductive load, TJ = 125°C
IC = 20A, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
∅P 3.55
Q
R
S
3.65
.140 .144
5.89
4.32
6.15 BSC
6.40 0.232 0.252
5.49
.170 .216
242 BSC
Eoff
3.5
mJ
TO-268 Outline
RthJC
RthCK
0.65 K/W
K/W
(TO-247)
0.25
Min Recommended Footprint
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
A1
A2
b
1.15
1.9
.4
1.45
.045 .057
b2
C
2.1
.75
.83
.65
.016 .026
D
13.80 14.00
.543 .551
.624 .632
.524 .535
E
15.85 16.05
E1
13.3
13.6
e
H
L
5.45 BSC
.215 BSC
.736 .752
.094 .106
18.70 19.10
2.40
1.20
2.70
1.40
L1
.047 .055
L2
L3
L4
1.00
1.15
.039 .045
.010 BSC
0.25 BSC
3.80
4.10
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 20N120B
IXGT 20N120B
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
40
35
30
25
20
15
10
5
16 0
14 0
12 0
10 0
80
60
40
20
0
VG E = 15V
13 V
VGE = 15V
13V
11V
9V
7V
1 1V
9V
7V
5V
5V
0
1
0.5
3
1.5
2
2.5
3
3.5
4
4.5
5
0
2
4
6
8
10 12 14 16 18
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Temperature Dependence of VCE(sat)
40
35
30
25
20
15
10
5
1. 4
1. 3
1. 2
1. 1
1
VG E = 15V
13V
VG E = 15V
I C = 40A
11V
9V
7V
5V
I C = 20A
0.9
0.8
0.7
I C= 10A
0 25 50 75 100 125 150
0
1
1.5
2
2.5
3
3.5
4
4.5
5
-50 -25
VCE - Volts
TJ - Degrees Centigrade
Fig. 6. Transconductance
Fig. 5. Input Admittance
80
70
60
50
40
30
20
10
27
24
21
18
15
12
9
TJ = -40ºC
25ºC
125ºC
TJ= -40ºC
25ºC
6
125ºC
3
0
0
4
5
6
7
8
9
10
0
10
20 30 40 50 60 70 80
VGE - Volts
I C - Amperes
© 2003 IXYS All rights reserved
IXGH 20N120B
IXGT 20N120B
Fig. 8. Dependence of Eoff on IC
Fig. 7. Dependence of Eoff on RG
14
12
10
8
14
12
10
8
TJ = 125ºC
VG E = 15V
VC E = 960V
I C= 40A
TJ = 125ºC
VGE = 15V
VCE = 960V
I C= 20A
R G= 56 Ohms
6
R G = 5 Ohms
6
4
4
2
I C= 10A
0
2
0
10
20
30
40
50
60
10
15
20
25
30
35
40
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Eoff on Temperature
Fig. 10. Gate Charge
16
14
12
10
8
15
12
9
Solid lines - RG = 56 Ohms
Dashed lines - RG = 5 Ohms
VGE = 15V
VCE = 600V
I C= 20A
I G= 10mA
VCE = 960V
I C = 40A
I C = 20A
6
6
4
3
2
I C = 10A
0
0
0
10
20 30
40 50 60 70 80
0
25
50
75
100
125
150
Q G - nanoCoulombs
TJ - Degrees Centigrade
Fig. 11. Capacitance
Fig. 12. Reverse-Bias Safe Operating Area
90
10000
1000
10 0
f = 1M Hz
80
70
60
50
40
30
20
10
TJ = 125 C
º
RG = 10 Ohms
dV/dT < 10V/ns
C
i es
C
C
oes
res
10
0
0
5
10
15
20 25 30 35 40
100
300
500
700
900
1100 1300
VCE - Volts
VCE - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 20N120B
IXGT 20N120B
F ig . 13. M aximu m Tran sien t Th ermal R esistan ce
1
0.1
1
10
100
1000
Pulse Width - milliseconds
© 2003 IXYS All rights reserved
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