IXGT15N120B2D1 [IXYS]
HiPerFAST IGBT; HiPerFAST IGBT
| 型号： | IXGT15N120B2D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
HiPerFASTTM IGBT
VCES
IC25
=1200 V
= 30 A
IXGH15N120B2D1
IXGT15N120B2D1
VCE(sat) = 3.3 V
Optimized for 10-20 KHz hard
switching and up to 100 KHz
resonant switching
tfi(typ)
= 137 ns
Symbol
Test Conditions
Maximum Ratings
TO-247AD
(IXGH)
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
TJ = 25°C to 150°C; RGE = 1 MΩ
V
VGES
VGEM
Continuous
Transient
20
30
V
V
G
C
TAB
E
IC25
IC90
ICM
TC = 25°C
30
15
60
A
A
A
TO-268
(IXGT)
TC = 90°C
TC = 25°C, 1 ms
G
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
ICM = 40
A
E
C (TAB)
(RBSOA)
Clamped inductive load
@ 0.8 VCES
PC
TC = 25°C
192
W
G = Gate
C = Collector
E = Emitter
TAB = Collector
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Features
Md
Mounting torque (TO-247)
1.13/10 Nm/lb.in.
z International standard packages:
JEDEC TO-247AD & TO-268
z IGBT and anti-parallel FRED in one
package
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
260
6 / 4
°C
Maximum tab temperature
soldering SMD devices for 10s
°C
z MOS Gate turn-on
- drive simplicity
z Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Weight
TO-247AD / TO-268
g
Applications
z
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Symbol
TestConditions
Characteristic Values
z
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
z
BVCES
VGE(th)
IC = 250 μA, VGE = 0 V
IC = 250 μA, VCE = VGE
1200
2.5
V
V
z
z
5.0
Switch-mode and resonant-mode
power supplies
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
100
3.5
μA
mA
Advantages
z Saves space (two devices in one
package)
Easy to mount with 1 screw
IGES
VCE = 0 V, VGE = 20 V
IC = ICE90, VGE = 15
100
3.3
nA
z
VCE(sat)
V
V
(isolated mounting screw hole)
Reduces assembly time and cost
z
TJ = 125°C
2.7
© 2005 IXYS All rights reserved
DS99492(09/05)
IXGH 15N120B2D1
IXGT 15N120B2D1
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
TO-247 AD Outline
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC90; VCE = 10 V,
12
15
S
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
Cies
1700
95
pF
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
pF
pF
Cres
38
Qg
86
13
26
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
td(on)
tri
td(off)
tfi
25
ns
ns
ns
ns
mJ
15
1 = Gate
VCE = 960 V, RG = Roff = 10 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
2 = Collector
3 = Emitter
Tab = Collector
165 240
137 255
,
Eoff
1.4
2.3
td(on)
tri
25
18
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
Eon
td(off)
tfi
0.60
260
305
2.8
mJ
ns
VCE = 960 V, RG = Roff = 10 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
ns
,
Eoff
mJ
RthJC
RthCK
0.65 K/W
K/W
TO-247
0.25
TO-268 Outline
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IF
TestConditions
min. typ. max.
TC = 100°C
15
A
VF
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V, TJ = 125°C
2.8
V
V
2.1
IRM
trr
IF = 25 A; -diF/dt = 100 A/μs, VR = 100 V
VGE = 0 V; TJ = 100°C
6
165
A
ns
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
RthJC
1.6 K/W
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
13.6
e
H
L
5.45 BSC
18.70 19.10
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
1.20
1.40
.047 .055
L2
L3
L4
1.00
0.25 BSC
3.80 4.10
1.15
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
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相关型号：
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IXYS
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