IXGT15N120BD1 [IXYS]
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode; 低VCE （ sat）的IGBT与二极管高速IGBT与二极管
| 型号： | IXGT15N120BD1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low VCE(sat) IGBT with Diode
High Speed IGBT with Diode
VDSS
IC25 VCE(sat)
IXGH/IXGT 15N120BD1
IXGH/IXGT 15N120CD1
1200 V 30 A 3.2 V
1200 V 30 A 3.8 V
Preliminary data
TO-247AD
(IXGH)
Symbol
TestConditions
MaximumRatings
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
TJ = 25°C to 150°C; RGE = 1 MW
G
C
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
TAB
IC25
IC90
ICM
TC = 25°C
30
15
60
A
A
A
TO-268
(IXGT)
TC = 90°C
G
TC = 25°C, 1 ms
E
SSOA
VGE= 15 V, TJ = 125°C, RG = 10 W
ICM = 40
A
(RBSOA)
Clampedinductiveload
@0.8 VCES
C (TAB)
PC
TC = 25°C
150
W
G = Gate
E = Emitter
C = Collector
TAB = Collector
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Md
Mountingtorque
1.13/10 Nm/lb.in.
Features
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
260
6/4
°C
°C
g
• Internationalstandardpackages:
JEDEC TO-247AD & TO-268
• IGBT and anti-parallel FRED in one
package
• MOS Gate turn-on
- drivesimplicity
Maximumtabtemperature
soldering SMD devices for 10s
Weight
TO-247AD/TO-268
• Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
powersupplies
BVCES
VGE(th)
IC = 1 A, VGE = 0 V
1000
2.5
V
V
IC = 250 mA, VCE = VGE
5.0
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
500 mA
Advantages
2
mA
• Saves space (two devices in one
package)
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Reduces assembly time and cost
VCE(sat)
IC
= IC90, VGE = 15 V
15N120BD1
15N120CD1
3.2
3.8
V
V
Note 2
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98658A(7/00)
1 - 2
IXGH 15N120BD1
IXGH 15N120CD1
IXGT 15N120BD1
IXGT 15N120CD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
Note 2.
12
15
S
Cies
Coes
Cres
1700
155
38
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qg
69
13
26
nC
nC
nC
Dim. Millimeter
Inches
Qge
Qgc
Min. Max. Min. Max.
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
td(on)
tri
td(off)
tfi
25
15
ns
ns
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
Inductive load, TJ = 25°C
E
F
4.32 5.49 0.170 0.216
IC = IC90; VGE = 15 V
150
280 ns
5.4
6.2 0.212 0.244
VCE = 0.8 VCES; RG = Roff = 10 W
15N120BD1
15N120CD1
160
115
320 ns
190 ns
3.0 mJ
1.6 mJ
G
H
1.65 2.13 0.065 0.084
Note 1.
-
4.5
-
0.177
15N120BD1 1.75
15N120CD1 1.05
J
K
1.0
1.4 0.040 0.055
10.8 11.0 0.426 0.433
Eoff
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
td(on)
tri
25
18
ns
ns
N
1.5 2.49 0.087 0.102
Inductive load, TJ = 125°C
Eon
td(off)
tfi
1.5
270
mJ
ns
IC = IC90; VGE = 15 V
TO-268AA (D3 PAK)
VCE = 0.8 VCES; RG = Roff = 10 W
15N120BD1
15N120CD1
15N120BD1
15N120CD1
360
250
3.5
ns
mJ
mJ
mJ
Note 1
Eoff
2.1
RthJC
RthCK
0.83 K/W
K/W
TO-247
0.25
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
Symbol
VF
TestConditions
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
IF = 20 A, VGE = 0 V
2.6
2.1
2.8
V
V
.016 .026
IF = 20 A, VGE = 0 V, TJ = 125°C
D
E
E1
13.80 14.00
15.85 16.05
13.3
5.45 BSC
18.70 19.10
.543 .551
.624 .632
.524 .535
IF
TC = 25°C
TC = 90°C
33
20
V
V
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
IRM
trr
IF = 20 A; -diF/dt = 400 A/ms, VR = 600 V
VGE = 0 V; TJ = 125°C
15
A
2.40
2.70
200
ns
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
trr
IF = 1 A; -diF/dt = 100 A/ms; VR = 30 V,VGE = 0 V
40
ns
3.80
4.10
.150 .161
RthJC
1.6 K/W
Notes:
1. Switching times may increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG.
,
Min.
Recommended
Footprint
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相关型号：
IXGT20N120BD1
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN
IXYS
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