IXGT16N170A [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXGT16N170A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Data
IXGH 16N170A
IXGT 16N170A
VCES
IC25
= 1700 V
16 A
High Voltage
IGBT
=
VCE(sat) = 5.0 V
tfi(typ)
=
40 ns
Symbol
TestConditions
Maximum Ratings
TO-268(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
1700
V
V
G
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
C (TAB)
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
16
8
40
A
A
A
TO-247AD(IXGH)
SSOA
V
= 15 V, TVJ = 125°C, RG = 10Ω
I
= 40
A
CGlaE mped inductive load
@ 0C.8M VCES
TAB)
(RBSOA)
G
C
E
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω
10
µs
G = Gate,
C = Collector,
TAB = Collector
E=Emitter,
PC
TC = 25°C
190
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
Md
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
300 °C
z
z
High current handling capability
MOS Gate turn-on
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
- drive simplicity
z
z
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Weight
TO-247
TO-268
6
4
g
g
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
Symbol
TestConditions
Characteristic Values
z
DC servo and robot drives
(TJ = 25°C, unless otherwise specified)
z
min. typ. max.
DC choppers
z
Uninterruptible power supplies (UPS)
z
BVCES
VGE(th)
I
= 250 µA, VGE = 0 V
1700
3.0
V
Switched-mode and resonant-mode
ICC = 250 µA, VCE = VGE
5.0
V
power supplies
ICES
VCE = 0.8 • VCES
VGE = 0 V
T = 25°C
50
µA
µA
Note 1 TJJ = 125°C
750
Advantages
z
High power density
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
z
Suitable for surface mounting
z
VCE(sat)
IC = IC90, VGE = 15 V
T = 25°C
TJJ = 125°C
4.0
4.8
5.0
V
V
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98993(01/03)
© 2003 IXYS All rights reserved
IXGH 16N170A
IXGT 16N170A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = I ; VCE = 10 V
Note 2 C25
6
10
S
P
Cies
Coes
Cres
1700
83
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
30
Qg
Qge
Qgc
65
13
24
nC
nC
nC
e
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
td(on)
tri
td(off)
tfi
36
57
200
40
ns
ns
350 ns
150 ns
1.5 mJ
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
R = 10 Ω, VCE = 0.8 VCES
NoG te 3
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Eoff
0.9
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
38
59
ns
ns
mJ
ns
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
Eon
1.5
R = 10 Ω, VCE = 0.8 VCES
NoG te 3
R
S
4.32
5.49
.170 .216
242 BSC
td(off)
200
6.15 BSC
tfi
55
ns
Eoff
1.1
mJ
TO-268 Outline
RthJC
RthCK
0.65 K/W
K/W
(TO-247)
0.25
Notes:1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
A1
A2
b
1.15
1.9
.4
1.45
.045 .057
b2
2.1
.75
.83
C
.65
.016 .026
D
E
13.80 14.00
.543 .551
.624 .632
.524 .535
15.85 16.05
E1
13.3
13.6
e
H
L
5.45 BSC
.215 BSC
.736 .752
.094 .106
18.70 19.10
2.40
1.20
2.70
1.40
L1
.047 .055
L2
L3
L4
1.00
1.15
.039 .045
.010 BSC
0.25 BSC
3.80
4.10
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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