IXGT10N170 [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXGT10N170 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总5页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES = 1700V
IC90 = 10A
VCE(sat) ≤ 4.0V
High Voltage
IGBT
IXGH10N170
IXGT10N170
TO-247 (IXGH)
Symbol
VCES
Test Conditions
Maximum Ratings
G
TC = 25°C to 150°C
1700
1700
V
V
C
C (TAB)
E
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
TO-268 (IXGT)
IC25
IC90
ICM
TC = 25°C
20
10
70
A
A
A
G
E
TC = 90°C
C (TAB)
TC = 25°C, 1ms
SSOA
VGE = 15V, TVJ = 125°C, RG = 16Ω
Clamped inductive load
ICM = 20
A
G = Gate
E = Emitter
C
= Collector
(RBSOA)
@ 0.8 • VCES
TAB = Collector
PC
TC = 25°C
110
W
TJ
-55 ... +150
150
°C
°C
°C
Features
TJM
Tstg
z International standard packages
JEDEC TO-268 and
-55 ... +150
JEDEC TO-247 AD
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
z High current handling capability
z MOS Gate turn-on
Md
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL94V-0
flammability classification
Weight
TO-247
TO-268
6
4
g
g
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
z DC servo and robot drives
z DC choppers
Min. Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
1700
3.0
V
V
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
5.0
VCE = 0.8 • VCES
VGE = 0V
50 μA
500 μA
TJ = 125°C
TJ = 125°C
Advantages
IGES
VCE = 0V, VGE = ± 20V
±100 nA
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
VCE(sat)
IC = IC90, VGE = 15V, Note 1
2.7
3.4
4.0
V
© 2008 IXYS CORPORATION, All rights reserved
DS98992A(10/08)
IXGH10N170
IXGT10N170
Symbol
Test Conditions
Characteristic Values
TO-247 AD Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
IC = 10A, VCE = 10V, Note 1
VCE = 10V, VGE = 10V
3.8
6.3
33
S
A
IC(ON)
Cies
Coes
Cres
700
40
pF
pF
pF
1
2
3
VCE = 25V, VGE = 0V, f = 1MHz
14
Qg
32
4
nC
nC
nC
Qge
Qgc
IC = 10A, VGE = 15V, VCE = 0.5 • VCES
16
Terminals: 1 - Gate
2 - Drain
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
td(on)
tr
td(off)
tf
30
69
ns
ns
ns
ns
Resistive load, TJ = 25°C
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
IC = 10A, VGE = 15V
132
600
VCE = 850V, RG = 16Ω
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
td(on)
tri
td(off)
tfi
30
270
135
495
ns
ns
ns
ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Resistive load, TJ = 125°C
IC = 10A, VGE = 15V
20.80 21.46
15.75 16.26
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
VCE = 850V, RG = 16Ω
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
RthJC
RthCS
1.1 °C/W
°C/W
R
4.32
5.49 .170 .216
(TO-247)
0.25
TO-268 Outline
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Min Recommended Footprint
Terminals: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXGH10N170
IXGT10N170
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
20
18
16
14
12
10
8
80
70
60
50
40
30
20
10
0
VGE = 15V
13V
11V
VGE = 15V
13V
9V
11V
7V
5V
6
9V
7V
4
2
0
0.0
0.0
6
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
15
0
2
4
6
8
10
12
14
16
18
20
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
20
18
16
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 15V
13V
11V
VGE = 15V
I C = 20A
9V
I C =10A
7V
5V
6
4
I C = 5A
2
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
35
30
25
20
15
10
5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
TJ = - 40ºC
25ºC
125ºC
TJ = 25ºC
I C = 20A
10A
5A
0
7
8
9
10
11
12
13
14
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
VGE - Volts
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: G_10N170(3N)10-13-08-A
IXGH10N170
IXGT10N170
Fig. 7. Transconductance
Fig. 8. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
16
14
12
10
8
TJ = - 40ºC
VCE = 850V
I C = 10A
I G = 10mA
25ºC
125ºC
6
4
2
0
0
5
10
15
20
25
30
35
0
4
8
12
16
20
24
28
32
IC - Amperes
QG - NanoCoulombs
Fig. 10. Capacitance
Fig. 9. Reverse-Bias Safe Operating Area
1,000
100
10
22
20
18
16
14
12
10
8
C
ies
C
oes
6
TJ = 150ºC
4
RG = 16Ω
dV / dt < 10V / ns
C
= 1 MHz
f
res
2
0
200
400
600
800
1000
1200
1400
1600
1800
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
2.0
1.0
0.1
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH10N170
IXGT10N170
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
350
300
250
200
150
100
50
350
300
250
200
150
100
50
RG = 16Ω
RG = 16Ω
VGE = 15V
CE = 850V
VGE = 15V
V
VCE = 850V
TJ = 125ºC
I C = 20A
I C = 10A
TJ = 25ºC
0
0
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95
105 115 125
IC - Amperes
TJ - Degrees Centigrade
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
400
380
360
340
320
300
280
260
240
65
60
55
50
45
40
35
30
25
800
700
600
500
400
300
200
100
160
150
140
130
120
110
100
90
tr
td(on
) - - - -
tf
td(off) - - - -
TJ = 125ºC, VGE = 15V
CE = 850V
RG = 16Ω, VGE = 15V
I C = 10A
V
VCE = 850V
I C = 20A
I C = 10A
I C = 20A
10
20
30
40
50
60
70
80
90
100
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
1400
1200
1000
800
600
400
200
0
210
190
170
150
130
110
90
700
650
600
550
500
450
400
350
300
250
200
500
450
400
350
300
250
200
150
100
50
tf
td(off
) - - - -
tf
td(off
) - - - -
RG = 16Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 850V
VCE = 850V
I C = 10A
I C = 20A
TJ = 125ºC, 25ºC
0
70
10
20
30
40
50
60
70
80
90
100
4
6
8
10
12
14
16
18
20
RG - Ohms
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: G_10N170(3N)10-13-08-A
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