IXGT10N170A [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXGT10N170A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总5页 (文件大小：571K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXGH 10N170A
IXGT 10N170A
VCES
IC25
= 1700 V
10 A
High Voltage
IGBT
=
VCE(sat) = 6.0 V
tfi(typ)
=
35 ns
Preliminary Data Sheet
Symbol
TestConditions
Maximum Ratings
TO-268(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
1700
V
V
G
VGES
VGEM
Continuous
Transient
20
30
V
V
E
C (TAB)
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
10
5
20
A
A
A
TO-247AD(IXGH)
SSOA
V
= 15 V, TVJ = 125°C, RG = 22Ω
I
= 20
A
CGlaE mped inductive load
@ 0C.8M VCES
TAB)
(RBSOA)
G
C
E
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω
10
µs
G = Gate,
C = Collector,
TAB = Collector
E=Emitter,
PC
TC = 25°C
140
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
Md
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
300 °C
z
z
z
High current handling capability
Veryhighfrequency
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
MOS Gate turn-on
- drive simplicity
Weight
TO-247
TO-268
6
4
g
z
z
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
g
Applications
z
Pulser circuits
Symbol
TestConditions
Characteristic Values
z
AC motor speed control
(TJ = 25°C, unless otherwise specified)
z
min. typ. max.
DC servo and robot drives
z
DC choppers
z
BVCES
VGE(th)
I
= 250 µA, VGE = 0 V
1700
3.0
V
Uninterruptible power supplies (UPS)
ICC = 250 µA, V = VGE
5.0
V
z
CE
Switched-mode and resonant-mode
power supplies
ICES
VCE = 0.8 • VCES
VGE = 0 V
T = 25°C
25
µA
µA
Note 1 TJJ = 125°C
500
Advantages
IGES
VCE = 0 V, VGE = 20 V
IC = IC90, VGE = 15 V
100
6.0
nA
z
High power density
z
VCE(sat)
T = 25°C
TJJ = 125°C
4.5
5.2
V
V
Suitable for surface mounting
Easy to mount with 1 screw,
z
(isolated mounting screw hole)
DS98991B(11/03)
© 2003 IXYS All rights reserved
IXGH 10N170A
IXGT 10N170A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = I ; VCE = 20 V
Note 2 C25
3
5
S
∅ P
Cies
Coes
Cres
650
40
22
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
QG
QGE
QGC
29
5
10
nC
nC
nC
e
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A12
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
td(on)
tri
td(off)
tfi
46
57
190
35
ns
ns
360 ns
ns
A
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
RG = 22 Ω, VCE = 0.5 VCES
b
b
b12
C
D
E
.4
.8
Eoff
0.38
0.8 mJ
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
48
59
ns
ns
mJ
ns
L1
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
RG = 22 Ω, VCE = 0.5 VCES
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
Eon
1.2
R
S
5.49
.170 .216
242 BSC
td(off)
200
6.15 BSC
tfi
40
ns
Eoff
0.6
mJ
TO-268 Outline
RthJC
RthCK
0.89 K/W
K/W
(TO-247)
0.25
Notes:1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
A1
A2
b
1.15
1.9
.4
1.45
.045 .057
b2
2.1
.75
.83
C
.65
.016 .026
D
E
13.80 14.00
.543 .551
.624 .632
.524 .535
15.85 16.05
E1
13.3
13.6
e
H
L
5.45 BSC
.215 BSC
.736 .752
.094 .106
18.70 19.10
2.40
1.20
2.70
1.40
L1
.047 .055
L2
L3
L4
1.00
1.15
.039 .045
.010 BSC
0.25 BSC
3.80
4.10
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGH 10N170A
IXGT 10N170A
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
10
9
8
7
6
5
4
3
2
40
35
30
25
20
15
10
5
VG E = 17V
15V
VG E = 17V
9V
15V
13V
13V
11V
7V
1 1V
9V
1
7V
25
0
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
30
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Temperature Dependence of VCE(sat)
2.6
2.4
2.2
2
10
9
8
7
6
5
4
3
2
VG E = 17V
15V
VG E = 15V
13V
9V
7V
11V
I C = 10A
1. 8
1. 6
1. 4
1. 2
I C= 5A
I C= 2.5A
1
1
0.8
0
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
6
7
8
9
10
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
Fig. 6. Input Admittance
15
12 . 5
10
12
11
10
9
TJ = 25 C
º
8
I C = 10A
7.5
5
7
6
TJ= 125
25
-40
º
C
5A
5
º
C
2.5
0
º
C
4
2.5A
3
5
6
7
8
9
10
11 12
13 14
15
4
5
6
7
8
9
VGE - Volts
VGE - Volts
© 2003 IXYS All rights reserved
IXGH 10N170A
IXGT 10N170A
Fig. 8. Dependence of Eoff on RG
Fig. 7. Transconductance
8
7
6
5
4
3
2
1.3
1.2
1.1
TJ = -40
º
C
C
º
TJ = 125 C
G E = 15V
C E = 1360V
V
V
25
º
I C = 20A
º
125 C
1
0.9
0.8
0.7
0.6
0.5
0.4
I C = 10A
I C = 5A
1
0
0
4
0
2 . 5
5
7 . 5
10
12 . 5
15
2 0
3 0
0
20
40
60
80
100
120
140
R G - Ohms
I C - Amperes
Fig. 9. Dependence of Eoff on IC
Fig. 10. Dependence of Eoff on Temperature
1. 6
1. 4
1. 2
1
1. 4
1. 3
1. 2
1. 1
1
Solid lines - RG = 120 Ohms
Dashed lines - RG = 20 Ohms
º
TJ = 125 C
VGE = 15V
CE = 850V
VG E = 15V
C E = 850V
V
V
I C = 20A
0.9
0.8
0.7
0.6
0.5
0.4
R G = 120 Ohms
0.8
0.6
0.4
0.2
R G= 20 Ohms
I C = 10A
25
I C = 5A
125
6
8
10
12
14
16
18
0
50
75
100
150
TJ - Degrees Centigrade
I C - Amperes
Fig. 11. Gate Charge
Fig. 12. Capacitance
15
12
9
10 0 0
10 0
10
VCE = 600V
I C = 5A
I G = 10mA
C
ies
f = 1MHz
6
C
oes
3
C
res
0
5
10
15
2 0
2 5
0
5
10
15
20
25
30
35
40
VCE - Volts
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGH 10N170A
IXGT 10N170A
Fig. 13. Maxim um T ransient T herm al Resistance
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1
10
100
1000
Pulse Width - milliseconds
© 2003 IXYS All rights reserved
相关型号：
IXGT20N120BD1
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN
IXYS
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