IXGR72N60C3 [IXYS]
Insulated Gate Bipolar Transistor;
| 型号： | IXGR72N60C3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总6页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
TM
VCES
IC110
VCE(sat)
tfi(typ)
= 600V
= 35A
£ 2.7V
= 55ns
GenX3 600V IGBT
IXGR72N60C3
(Electrically Isolated Tab)
High-Speed Low-Vsat PT IGBT
40-100 kHz Switching
ISOPLUS 247TM
Symbol
VCES
Test Conditions
Maximum Ratings
TJ = 25C to 150C
600
600
V
V
VCGR
TJ = 25C to 150C, RGE = 1M
G
C
E
Isolated Tab
VGES
VGEM
Continuous
Transient
20
30
V
V
G = Gate
E = Emitter
C = Collector
IC25
IC110
ICM
TC = 25C
TC = 110C
TC = 25C, 1ms
80
35
A
A
A
400
IA
TC = 25C
TC = 25C
50
A
Features
EAS
500
mJ
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
SSOA
VGE = 15V, TVJ = 125C, RG = 2
Clamped Inductive Load
ICM = 150
A
Optimized for Low Switching Losses
Square RBSOA
(RBSOA)
VCE VCES
PC
TC = 25C
200
W
Isolated Mounting Surface
Avalanche Rated
2500V Electrical Isolation
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Advantages
High Power Density
VISOL
50/60 Hz, 1 Minute
Mounting Force
2500
V~
Low Gate Drive Requirement
FC
20..120/4.5..27
5
N/lb
g
Weight
Applications
High Frequency Power Inverters
UPS
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
BVCES
IC = 250A, VGE = 0V
600
V
V
VGE(th)
ICES
IC = 250A, VCE = VGE
3.0
5.5
VCE = VCES, VGE = 0V
300 A
mA
100 nA
TJ = 125C
TJ = 125C
1
IGES
VCE = 0V, VGE = 20V
VCE(sat)
IC = 50A, VGE = 15V
2.10
1.65
2.70
V
V
DS100607(04/14)
© 2014 IXYS CORPORATION, All Rights Reserved
IXGR72N60C3
Symbol
Test Conditions
Characteristic Values
ISOPLUS247 (IXGR) Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 50A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
33
55
S
Cies
Coes
Cres
4780
330
pF
pF
pF
117
Qg
175
33
nC
nC
nC
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
72
td(on)
tri
27
37
ns
ns
Inductive Load, TJ = 25C
1
2
3
- Gate
- Collector
- Emitter
Eon
td(off)
tfi
1.03
77
mJ
ns
IC = 50A, VGE = 15V
130
110
VCE = 480V, RG = 2Note 2
55
ns
Eoff
0.48
0.95 mJ
td(on)
tri
26
36
ns
ns
Inductive Load, TJ =1 25C
Eon
td(off)
tfi
1.48
120
124
0.93
mJ
ns
IC = 50A, VGE = 15V
VCE = 480V, RG = 2Note 2
ns
Eoff
mJ
RthJC
RthCS
0.62 C/W
C/W
0.15
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGR72N60C3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
100
90
80
70
60
50
40
30
20
10
0
350
300
250
200
150
100
50
VGE = 15V
13V
VGE = 15V
13V
11V
11V
9V
9V
7V
7V
5V
5V
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
2
4
6
8
10
12
14
150
8.0
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
JunctionTemperature
Fig. 3. Output Characteristics @ TJ = 125ºC
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
100
90
80
70
60
50
40
30
20
10
0
VGE = 15V
13V
VGE = 15V
11V
9V
I C = 100A
I C = 50A
7V
5V
I C = 25A
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
25
50
75
100
125
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
TJ = 25ºC
TJ = 125ºC
25ºC
I C = 100A
- 40ºC
50A
25A
6
7
8
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
VGE - Volts
VGE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
IXGR72N60C3
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
14
12
10
8
90
80
70
60
50
40
30
20
10
0
TJ = - 40ºC
VCE = 300V
I
I
C = 50A
G = 10mA
25ºC
125ºC
6
4
2
0
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
140
160
180
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
160
140
120
100
80
10,000
1,000
100
C
ies
C
oes
res
60
C
40
TJ = 125ºC , RG = 2Ω
dv / dt < 10V / ns
= 1 MHz
f
20
0
10
100
200
300
400
VCE - Volts
500
600
0
5
10
15
20
25
30
35
40
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGR72N60C3
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
5.6
4.8
4.0
3.2
2.4
1.6
0.8
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
E
E
on - - - -
off
E
V
E
on - - - -
off
T
J
= 125ºC , V = 15V
GE
R
G
= 2
V
Ω
= 15V
GE
V
= 480V
CE
= 480V
CE
I
= 100A
C
T
= 125ºC, 25ºC
J
I
= 50A
C
20
30
40
50
60
70
80
90
100
2
3
4
5
6
7
8
9
10
11 12
13 14
15
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
190
180
170
160
150
140
130
120
110
100
90
500
450
400
350
300
250
200
150
100
50
3.5
5.6
4.8
4.0
3.2
2.4
1.6
0.8
0.0
t f i
t
d(off) - - - -
E
E
on - - - -
3.0
2.5
2.0
1.5
1.0
0.5
0.0
off
= 2ꢀ
T
J
= 125ºC, V = 15V
GE
R
VGE = 15V
G
V
= 480V
CE
VCE = 480V
IC = 100A
I
= 100A
C
I
= 50A
C
I
= 50A
115
C
0
25
35
45
55
65
75
85
95
105
125
2
3
4
5
6
7
8
9
10 11 12 13 14 15
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
160
140
120
100
80
125
115
105
95
180
150
t f i
t
d(off) - - - -
tf i
t
d(off) - - - -
160
140
120
100
80
140
130
120
110
100
90
R
G
= 2Ω , V = 15V
GE
R
G
= 2Ω , VGE = 15V
V
= 480V
CE
VCE = 480V
T
J
= 125ºC
I
= 100A
C
I
= 50A
C
85
60
T
J
= 25ºC
70
60
75
40
80
20
70
40
65
20
30
40
50
60
80
90
100
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
IC - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
IXGR72N60C3
Fig. 18. Inductive Turn-on
Fig. 19. Inductive Turn-on
Switching Times vs. Gate Resistance
Switching Times vs. Collector Current
160
140
120
100
80
60
55
50
45
40
35
30
25
110
100
90
80
70
60
50
40
30
20
10
38
36
34
32
30
28
26
24
22
20
18
t r i
t
d(on) - - - -
t r i
td(on) - - - -
T
J
= 125ºC, V = 15V
GE
R
G
= 2ꢀ , V = 15V
GE
V
= 480V
CE
V
= 480V
CE
I
= 100A
C
T
J
= 25ºC, 125ºC
60
40
I
= 50A
8
C
20
2
3
4
5
6
7
9
10 11 12 13 14 15
20
30
40
50
60
70
80
90
100
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
120
110
100
90
35
34
33
32
31
30
29
28
27
26
25
t r i
t
d(on) - - - -
R
G
= 2Ω , V = 15V
GE
V
= 480V
CE
80
I
= 100A
C
70
60
50
40
30
I
= 50A
C
20
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_72N60C3(8D)11-25-09-C
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