IXFN26N100P [IXYS]
Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET
| 型号： | IXFN26N100P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar Power MOSFET HiPerFET |
| 文件： | 总4页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM Power MOSFET
HiPerFETTM
VDSS = 1000V
ID25 = 23A
RDS(on) ≤ 390mΩ
≤ 300ns
IXFN26N100P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
trr
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
VDSS
Test Conditions
Maximum Ratings
S
TJ = 25°C to 150°C
1000
1000
V
V
G
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
S
ID25
IDM
TC = 25°C
23
65
A
A
D
D = Drain
TC = 25°C, pulse width limited by TJM
G = Gate
S = Source
IAR
TC = 25°C
TC = 25°C
13
A
J
EAS
1.0
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
20
V/ns
W
595
Features
TJ
-55 ... +150
150
°C
°C
°C
z International standard package
z Encapsulating epoxy meets
UL94V-0, flammability classification
z miniBLOC with Aluminium nitride
isolation
TJM
Tstg
-55 ... +150
TL
1.6mm (0.062 in.) from case for 10s
300
°C
z Fast recovery diode
VISOL
50/60 Hz, RMS
t = 1min
2500
3000
V~
V~
z Unclamped Inductive Switching (UIS)
rated
IISOL ≤ 1mA
t = 1s
Md
Mounting torque
Terminal connection torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
z Low package inductance
- easy to drive and to protect
Weight
30
g
Advantages
z
Easy to mount
Space savings
High power density
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 1mA
VGS = ± 30V, VDS = 0V
1000
3.5
V
V
z Switched-mode and resonant-mode
power supplies
6.5
± 200 nA
z DC-DC Converters
z Laser Drivers
IDSS
VDS = VDSS
VGS = 0V
25 μA
2.0 mA
z AC and DC motor controls
z Robotics and servo controls
TJ = 125°C
RDS(on)
VGS = 10V, ID = 13A, Note 1
390 mΩ
DS99878A(4/08)
©2008 IXYS CORPORATION, All rights reserved
IXFN26N100P
Symbol
Test Conditions
Characteristic Values
SOT-227B Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 13A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate input resistance
13
22
S
Ciss
Coss
Crss
11.9
690
60
nF
pF
pF
RGi
1.50
Ω
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 13A
RG = 1Ω (External)
45
45
72
50
ns
ns
ns
ns
Qg(on)
Qgs
197
76
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 13A
Qgd
85
RthJC
RthCS
0.21 °C/W
°C/W
0.05
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
26
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
104
1.5
trr
300 ns
IF = 13A, -di/dt = 100A/μs
QRM
IRM
1.2
12
μC
VR = 100V
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFN26N100P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
28
24
20
16
12
8
70
60
50
40
30
20
10
0
VGS = 10V
9V
VGS = 10V
9V
8V
7V
8V
7V
4
0
0
0
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
25
30
150
150
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. RDS(on) Normalized to ID = 13A Value
vs. Junction Temperature
28
24
20
16
12
8
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
9V
VGS = 10V
I D = 26A
I D = 13A
8V
7V
4
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 13A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
24
VGS = 10V
TJ = 125ºC
22
20
18
16
14
12
10
8
6
TJ = 25ºC
4
2
0
5
10 15 20 25 30 35 40 45 50 55 60 65
ID - Amperes
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
©2008 IXYS CORPORATION, All rights reserved
IXFN26N100P
Fig. 8. Transconductance
Fig. 7. Input Admittance
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
TJ = 125ºC
25ºC
- 40ºC
TJ = - 40ºC
25ºC
125ºC
0
0
0
5
10
15
20
25
30
35
40
280
10
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
1.1
35
9.0
1.2
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
80
70
60
50
40
30
20
10
0
VDS = 500V
I
I
D = 13A
G = 10mA
TJ = 125ºC
6
TJ = 25ºC
4
2
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
40
80
120
160
200
240
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.000
0.100
0.010
0.001
= 1 MHz
f
C
iss
C
oss
C
rss
10
0
5
10
15
20
25
30
0.00001
0.0001
0.001
0.01
0.1
1
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds
IXYS REF: F_26N100P(86)3-28-08-B
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