IRGB4045DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGB4045DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总10页 (文件大小：781K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97269
IRGB4045DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
C
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
IC = 6.0A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.7V
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of the Parts Tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
G
E
n-channel
C
Benefits
E
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
C
G
TO-220AB
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Units
V
Max.
600
12
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC@ TC = 25°C
IC@ TC = 100°C
ICM
6.0
20
Clamped Inductive Load Current c
20
ILM
A
8.0
IF@TC=25°C
IF@TC=100°C
IFM
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current d
4.0
20
± 20
± 30
77
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
V
VGE
PD @ TC =25°
PD @ TC =100°
TJ
W
39
°C
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT e
Junction-to-Case - Diode e
Min.
Typ.
—
Max.
1.94
6.30
—
Units
RθJC
RθJC
RθCS
RθJA
—
—
—
—
—
°C/W
Case-to-Sink, flat, greased surface
0.5
—
Junction-to-Ambient, typical socket mount e
62
1
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11/28/06
IRGB4045DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
VGE = 0V, Ic =100 µA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
V
CT6
V
GE = 0V, Ic = 250µA ( 25 -175 oC )
∆V(BR)CES/∆TJ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
—
—
—
0.36
1.7
—
2.0
—
V/°C
IC = 6.0A, VGE = 15V, TJ = 25°C
IC = 6.0A, VGE = 15V, TJ = 150°C
VCE(on)
2.07
V
5,6,7,9,
10 ,11
—
2.14
—
—
IC = 6.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 150µA
VGE(th)
Gate Threshold Voltage
4.0
6.5
V
9,10,11,12
CE = VGE, IC = 250µA ( 25 -175 oC )
-13
V
∆VGE(th)/∆TJ
gfe
Threshold Voltage temp. coefficient
Forward Transconductance
—
—
—
—
—
25
mV/°C
S
5.8
—
VCE = 25V, IC = 6.0A, PW =80µs
VGE = 0V,VCE = 600V
ICES
µA
Collector-to-Emitter Leakage Current
V
GE = 0V, VCE = 600V, TJ =175°C
—
—
—
250
8
VFM
IF = 6.0A
1.60 2.30
V
Diode Forward Voltage Drop
—
—
1.30
—
—
IF = 6.0A, TJ = 175°C
VGE = ± 20 V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Ref.Fig
24
Qg
IC = 6.0A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
3.1
6.4
56
19.5
4.65
9.6
86
143
229
35
15
93
22
—
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
V
V
CC = 400V
GE = 15V
nC
µJ
ns
CT1
IC = 6.0A, VCC = 400V, VGE = 15V
G = 47Ω, L=1mH, LS= 150nH, TJ = 25°C
R
122
178
27
CT4
CT4
Energy losses include tail and diode reverse recovery
IC = 6.0A, VCC = 400V
11
RG = 47Ω, L=1mH, LS= 150nH
td(off)
tf
75
TJ = 25°C
Turn-Off delay time
Fall time
17
Eon
Eoff
Etotal
td(on)
tr
IC = 6.0A, VCC = 400V, VGE = 15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
140
189
329
26
13,15
CT4
R
G = 47Ω, L=1mH, LS= 150nH, TJ = 175°C
—
µJ
ns
—
Energy losses include tail and diode reverse recovery
IC = 6.0A, VCC = 400V
WF1,WF2
14,16
—
12
R
G = 47Ω, L=1mH, LS= 150nH
—
CT4
td(off)
tf
95
TJ = 175°C
Turn-Off delay time
Fall time
—
WF1,WF2
32
—
Cies
Coes
Cres
V
V
GE = 0V
Input Capacitance
350
29
—
23
pF
µs
CC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
10
—
f = 1Mhz
TJ = 175°C, IC = 20A
4
V
CC = 500V, Vp =600V
RG = 100Ω, VGE = +15V to 0V
CC = 400V, Vp =600V
RG = 100Ω, VGE = +15V to 0V
µJ TJ = 175oC
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
V
22, CT3
WF4
SCSOA
Erec
Short Circuit Safe Operating Area
5
—
—
—
Reverse recovery energy of the diode
Diode Reverse recovery time
178
74
—
17,18,19
VCC = 400V, IF = 6.0A
GE = 15V, Rg = 47Ω, L=1mH, LS=150nH
ns
A
trr
Irr
—
—
—
—
20,21
WF3
V
Peak Reverse Recovery Current
12
Notes:
VCC = 80% (VCES), VGE = 15V, L = 1.0mH, RG = 47Ω.
Pulse width limited by max. junction temperature.
Rθ is measured at TJ approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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IRGB4045DPbF
14
12
10
8
80
70
60
50
40
30
20
10
0
6
4
2
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
T
(°C)
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
10µsec
100µsec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0
0.1
10
100
(V)
1000
1
10
100
1000
V
(V)
CE
V
CE
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VCE = 15V
Fig. 3 - Forward SOA,
TC = 25°C; TJ ≤ 175°C
20
15
10
5
20
15
10
5
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
GE
GE
V
V
GE
GE
V
GE
V
GE
GE
V
GE
Bottom V
Bottom
V
GE
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
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3
IRGB4045DPbF
20
20
18
16
14
12
10
8
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
V
GE
V
GE
V
GE
Bottom
V
15
10
5
GE
-40°C
25°C
175°C
6
4
2
0
0
0
2
4
6
8
10
0.0
1.0
2.0
3.0
V
(V)
F
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = 80µs
tp = 80µs
10
10
8
6
4
2
0
8
6
4
2
0
I
I
I
= 3.0A
= 6.0A
= 12A
I
I
I
= 3.0A
= 6.0A
= 12A
CE
CE
CE
CE
CE
CE
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
20
10
8
18
16
14
12
10
8
T
= 25°C
J
T
= 175°C
J
I
I
I
= 3.0A
CE
CE
CE
6
= 6.0A
= 12A
4
6
4
2
2
0
0
4
6
8
10
12
14
16
5
10
15
20
V
Gate-to-Emitter Voltage (V)
V
(V)
GE,
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 175°C
4
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IRGB4045DPbF
400
350
300
250
200
150
100
50
1000
100
10
td
OFF
t
F
E
OFF
td
ON
t
R
E
ON
1
0
2
4
6
I
8
10
12
14
2
4
6
8
10
12
14
I
(A)
C
(A)
C
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 47Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47Ω; VGE = 15V.
220
200
1000
100
10
E
OFF
180
td
OFF
160
t
F
E
ON
140
120
100
80
td
ON
t
R
60
1
0
25
50
Rg (
75
100
125
0
25
50
75
100
125
Ω
( )
R
G
Ω
)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 6.0A; VGE= 15V
22
20
18
16
14
12
10
8
30
25
Ω
10
R
G =
20
15
10
5
Ω
22
R
G =
Ω
47
R
R
G =
Ω
100
G =
6
0
0
25
50
75
Ω)
100
125
2
4
6
8
10
12
14
I
(A)
R
(
F
G
Fig. 17 - Typical Diode IRR vs. IF
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C
TJ = 175°C; IF = 6.0A
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5
IRGB4045DPbF
20
18
16
14
12
10
8
1200
1000
800
12A
22
10
Ω
Ω
47
Ω
6.0A
600
100
Ω
400
3.0A
200
6
0
500
1000
1500
0
200
400
600
800 1000 1200
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 6.0A; TJ = 175°C
50
350
20
300
250
200
150
100
50
T
sc
40
30
20
10
15
Ω
Ω
R
R
= 10
G
G
I
sc
= 22
10
5
Ω
= 47
R
G
Ω
R
= 100
G
0
2
4
6
8
10
12
14
8
10
12
14
(V)
16
18
I
(A)
V
F
GE
Fig. 22- Typ. VGE vs. Short Circuit Time
Fig. 21 - Typical Diode ERR vs. IF
VCC=400V, TC =25°C
TJ = 175°C
1000
100
10
16
14
12
10
8
Cies
V
V
= 400V
= 300V
CES
CES
Coes
Cres
6
4
2
1
0
0
100
200
V
300
(V)
400
500
0
2
4
6
8
10
12
14
Q
, Total Gate Charge (nC)
CE
G
Fig. 23- Typ. Capacitance vs. VCE
Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 6.0A, L=600µH
6
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IRGB4045DPbF
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.0415
0.7262
0.7721
0.4016
0.000005
0.000076
0.000810
0.004929
τ
0.1
τ
J τJ
τ
Cτ
0.02
0.01
τ
1τ1
τ
τ
2τ2
3τ3
4τ4
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
0.20
0.10
1
R1
R1
R2
R2
R3
R3
R4
R4
0.05
Ri (°C/W) τi (sec)
0.2195
1.7733
2.9352
1.3704
0.000023
0.000165
0.001493
0.013255
τ
τ
J τJ
τ
Cτ
0.02
0.01
1τ1
Ci= τi/Ri
τ
τ
τ
3τ3
4τ4
0.1
0.01
2τ2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGB4045DPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
8
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IRGB4045DPbF
600
500
400
300
200
100
0
12
10
8
600
500
400
300
200
100
0
30
25
tr
TEST
CURRENT
20
tf
90% test
current
15
6
90% ICE
10
4
10% test
current
5% ICE
5% VCE
5
2
5% VCE
0
0
Eoff Loss
Eon Loss
-5
-100
-100
-2
4.3
4.5
4.7
-0.2
0
0.2 0.4 0.6 0.8
1
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
500
100
15
80
70
60
50
40
30
20
10
0
VCE
450
400
350
300
250
200
150
100
50
0
-100
-200
10
5
QRR
tRR
0
10%
Peak
IRR
ICE
-300 Peak
IRR
-5
-400
-10
-15
-20
-500
-10
-20
-600
0
-0.05
0.05
0.15
0.25
-2 -1 0 1 2 3 4 5 6 7 8
time (µS)
Time (uS)
WF.3- Typ. Diode Recovery Waveform
@ TJ = 175°C using CT.4
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
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9
IRGB4045DPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/06
10
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