IRGB4086PBF [INFINEON]
PDD TRENCH IGBT; PDD TRENCH IGBT
| 型号： | IRGB4086PBF |
| 厂家： | 
Infineon |
| 描述： | PDD TRENCH IGBT |
| 文件： | 总9页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96222
IRGB4086PbF
PDP TRENCH IGBT
IRGS4086PbF
Key Parameters
Features
VCE min
300
1.90
250
150
V
V
l
Advanced Trench IGBT Technology
VCE(ON) typ. @ IC = 70A
IRP max @ TC= 25°C
TJ max
l
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
A
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for Improved Panel Efficiency
)
°C
l
l
High Repetitive Peak Current Capability
Lead Free Package
C
E
E
C
C
G
G
G
D2Pak
E
TO-220AB
IRGB4086PbF IRGS4086PbF
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
70
A
40
250
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
160
Power Dissipation
W
63
Power Dissipation
1.3
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lb in (1.1N m)
N
Thermal Resistance
Parameter
Typ.
–––
0.24
–––
Max.
0.8
–––
40
Units
°C/W
g (oz)
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Weight
Rθ
CS
Rθ
JA
6.0 (0.21)
–––
www.irf.com
1
02/02/09
IRGB/S4086PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 1 mA
Parameter
Collector-to-Emitter Breakdown Voltag 300
Min. Typ. Max. Units
BVCES
–––
–––
–––
V
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 25A
V
/ T
∆
J
∆Β
Breakdown Voltage Temp. Coefficient –––
0.29
V/°C
CES
–––
–––
1.29 1.55
1.49 1.67
1.90 2.10
2.57 2.96
VGE = 15V, ICE = 40A
VCE(on)
VGE = 15V, ICE = 70A
Static Collector-to-Emitter Voltage
–––
–––
–––
2.6
V
VGE = 15V, ICE = 120A
VGE = 15V, ICE = 70A, TJ = 150°C
VCE = VGE, ICE = 500µA
2.27
–––
-11
2.0
5.0
100
–––
–––
29
–––
5.0
VGE(th)
Gate Threshold Voltage
V
V
/ T
∆
J
∆
Gate Threshold Voltage Coefficient
–––
––– mV/°C
GE(th)
VCE = 300V, VGE = 0V
ICES
Collector-to-Emitter Leakage Current –––
25
–––
–––
100
-100
–––
–––
–––
—
µA
VCE = 300V, VGE = 0V, TJ = 100°C
VCE = 300V, VGE = 0V, TJ = 150°C
VGE = 30V
–––
–––
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
–––
–––
–––
–––
–––
—
nA
V
V
V
GE = -30V
CE = 25V, ICE = 25A
CE = 200V, IC = 25A, VGE = 15V
gfe
Qg
Qgc
td(on)
tr
S
65
nC
22
IC = 25A, VCC = 196V
36
R = 10 , L=200µH, L = 200nH
Ω
—
31
—
ns
ns
G
S
td(off)
tf
td(on)
tr
td(off)
tf
TJ = 25°C
Turn-Off delay time
Fall time
—
112
65
—
—
—
IC = 25A, VCC = 196V
Turn-On delay time
Rise time
—
30
—
R = 10 , L=200µH, L = 200nH
Ω
—
33
—
G
S
TJ = 150°C
Turn-Off delay time
Fall time
—
145
98
—
—
—
tst
VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
Shoot Through Blocking Time
100
–––
–––
ns
µJ
––– 1075 –––
EPULSE
Energy per Pulse
––– 1432 –––
––– 2250 –––
Ciss
Coss
Crss
LC
Input Capacitance
VCE = 30V
Output Capacitance
–––
–––
–––
110
58
–––
–––
–––
pF
ƒ = 1.0MHz,
See Fig.13
Reverse Transfer Capacitance
Internal Collector Inductance
5.0
Between lead,
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
13
–––
and center of die contact
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Half sine wave with duty cycle = 0.1, ton=2µsec.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recomended footprint and soldering techniques refer
to application note #AN-994.
R is measured at TJ of approximately 90°C.
θ
2
www.irf.com
IRGB/S4086PbF
240
200
160
120
80
240
200
160
120
80
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
40
40
0
0
0
4
8
12
16
0
4
8
12
16
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
240
240
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
200
160
120
80
200
160
120
80
40
40
0
0
0
4
8
12
16
0
4
8
12
16
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
240
200
10
I
= 25A
C
8
6
4
2
0
T
T
= 25°C
J
J
= 150°C
160
120
80
T
T
= 25°C
J
J
= 150°C
40
0
5
10
15
20
2
4
6
8
10
12
14
16
V
(V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
www.irf.com
3
IRGB/S4086PbF
80
70
60
50
40
30
20
10
0
300
200
100
0
ton= 2µs
Duty cycle = 0.1
Half Sine Wave
25
50
75
100
125
150
0
25
50
75
100
125
150
Case Temperature (°C)
T
, Case Temperature (°C)
C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
1600
1500
L = 220nH
C = 0.4µF
V
= 240V
CC
1400
1300
1200
1100
1000
900
1400
1200
1000
800
L = 220nH
C = variable
100°C
100°C
25°C
800
25°C
600
700
600
400
500
200
400
150 160 170 180 190 200 210 220 230 240
Collector-to-Emitter Voltage (V)
160 170 180 190 200 210 220 230
V
I , Peak Collector Current (A)
C
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
2000
1000
V
= 240V
CC
L = 220nH
t = 1µs half sine
C= 0.4µF
1600
1200
800
400
0
100
10 µs
100 µs
C= 0.3µF
C= 0.2µF
125
10
1ms
1
1
10
100
1000
25
50
75
100
150
V
(V)
CE
T , Temperature (ºC)
J
Fig 11. EPULSE vs. Temperature
Fig 12. Forward Bias Safe Operating Area
4
www.irf.com
IRGB/S4086PbF
25
20
15
10
5
10000
1000
100
I = 25A
D
V
V
V
= 240V
= 200V
= 150V
DS
DS
DS
Cies
Coes
Cres
0
10
0
20
40
60
80
100
0
100
200
300
Q
Total Gate Charge (nC)
G
V
(V)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
D = 0.50
0.20
0.1
0.10
0.05
R1
R1
R2
R2
R3
R3
τι
(sec)
Ri (°C/W)
τ
JτJ
τ
τ
Cτ
0.084697 0.000038
0.374206 0.001255
0.341867 0.013676
0.02
0.01
0.01
τ
1 τ1
τ
2 τ2
3 τ3
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
www.irf.com
5
IRGB/S4086PbF
A
RG
C
PULSE A
PULSE B
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16b. tst Test Waveforms
Fig 16a. tst and EPULSE Test Circuit
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
www.irf.com
IRGB/S4086PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
7
IRGB/S4086PbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
For GB Production
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com
IRGB/S4086PbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2009
www.irf.com
9
相关型号：
IRGB410U
Insulated Gate Bipolar Transistor, 500V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
INFINEON
IRGB420UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V,Ic=7.5A)
INFINEON
IRGB430UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A)
INFINEON
©2020 ICPDF网 联系我们和版权申明