IRGB420U [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A); 绝缘栅双极晶体管（ VCES = 500V ， VGE @ = 15V ， IC = 7.5A ）
| 型号： | IRGB420U |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A) |
| 文件： | 总6页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.784A
IRGB420U
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast IGBT
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
VCES = 500V
V
CE(sat) ≤ 3.0V
G
@VGE = 15V, IC = 7.5A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
500
14
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
IC @ TC = 100°C
7.5
28
A
ICM
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
28
VGE
±20
5.0
60
V
mJ
W
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
2.1
—
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
0.50
—
—
80
—
2.0 (0.07)
—
g (oz)
Revision 0
C-575
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IRGB420U
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
500
20
—
—
—
—
—
V
V
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
0.47
2.4
3.1
2.7
—
—
V/°C VGE = 0V, IC = 1.0mA
IC = 7.5A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
3.0
—
VGE = 15V
—
V
IC = 14A
See Fig. 2, 5
—
—
IC = 7.5A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-10
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
1.2 2.0
—
S
VCE = 100V, IC = 7.5A
VGE = 0V, VCE = 500V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
250
1000
µA
VGE = 0V, VCE = 500V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Min. Typ. Max. Units
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
3.7
6.5
28
23
5.6
9.8
—
IC = 7.5A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
11
—
IC = 7.5A, VCC = 400V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
Fall Time
72 110
96 140
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.13
0.08
—
—
mJ
ns
See Fig. 9, 10, 11, 14
0.21 0.28
td(on)
tr
td(off)
tf
26
12
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 7.5A, VCC = 400V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 10, 14
Turn-Off Delay Time
Fall Time
120
140
0.35
7.5
330
47
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
5.9
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Pulse width 5.0µs,
single shot.
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
RG= 50Ω, ( See fig. 13a )
C-576
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IRGB420U
20
16
For both:
Triangular w ave:
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
G ate drive as spe cified
Powe r Dissipa tion = 1 4W
Clamp voltage:
80% of rated
Square w ave:
60% of rated
12
8
voltage
Ideal diodes
4
0
0.1
1
10
100
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=I PK
)
100
10
1
100
10
T
= 150°C
J
T
= 25°C
J
T
= 150°C
T
J
= 25°C
J
1
0 .1
V
= 100V
V
= 15V
C C
G E
20µs P ULSE W IDTH
5µs PULSE W IDTH
0.01
5
10
15 20
1
10
V
, G ate-to-E mitter Voltage (V)
VCE , Collector-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-577
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IRGB420U
1 5
1 2
9
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
= 15V
V
= 15V
G E
G E
80µs PULSE W IDTH
I
= 15A
C
I
I
= 7.5A
= 4.0A
C
C
6
3
0
-60 -40 -20
0
20
40
60
80 100 120 140 160
25
50
75
100
125
150
T
C
, Case Tem perature (°C)
TC , Case Temperature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
t
(THERMAL RESPONSE)
2
Notes:
1. D uty factor D
=
t
/ t
1
2
2. P eak T = P
x Z
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-578
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IRGB420U
20
16
12
8
700
V
C
C
C
= 0V,
f = 1MHz
V
I
= 400V
= 7.5A
GE
ies
res
oes
CE
C
= C + C
,
C
SHORTED
ge
gc
ce
= C
gc
600
500
400
300
200
100
0
= C + C
ce
gc
C
ies
C
oes
C
res
4
0
1
10
100
0
4
8
12
16
VC E , Collector-to-Emitter Voltage (V)
Q G , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
0.22
0.21
0.20
0.19
0.18
0.17
10
V
V
T
I
= 400V
= 15V
Ω
= 50
= 15V
= 400V
R
V
V
G
CC
G E
C
G E
CC
=
25°C
= 7.5A
C
1
I
= 15A
C
I
I
= 7.5A
= 4.0A
C
C
0.1
0.01
20
30
40
50
60
-60 -40 -20
0
20
40
60
80 100 120 140 160
R G , Gate Resistance (
)
T , Case Temperature (°C)
C
Ω
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-579
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IRGB420U
1.0
1000
100
10
Ω
R
T
V
V
= 50
V
T
= 20V
= 125°C
G
G E
= 150°C
= 400V
= 15V
C
J
CC
G E
0.8
0.6
0.4
0.2
0.0
SAFE OP ERA TING AREA
1
0.1
1
10
100
1000
0
4
8
12
16
V
, C olle ctor-to-E m itter V oltage (V )
I
, Collector-to-E mitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
Refer to Section D for the following:
Appendix A: Section D - page D-3
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1 - JEDEC Outline TO-220AB
Section D - page D-12
C-580
To Order
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