IRGB4065PBF [INFINEON]
PDP TRENCH IGBT; PDP TRENCH IGBT
| 型号： | IRGB4065PBF |
| 厂家： | 
Infineon |
| 描述： | PDP TRENCH IGBT |
| 文件： | 总9页 (文件大小：786K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97059B
IRGB4065PbF
IRGS4065PbF
PDP TRENCH IGBT
Features
l
Advanced Trench IGBT Technology
Key Parameters
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
High repetitive peak current capability
Lead Free package
VCE min
300
V
V
A
TM
VCE(ON) typ. @ IC = 70A
IRP max @ TC= 25°C c
TJ max
1.75
l
)
205
150
l
l
°C
C
C
C
E
E
C
G
G
C
G
TO-220
D2Pak
IRGS4065DPbF
E
IRGB4065DPbF
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on) andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
70
A
40
205
178
Power Dissipation
W
71
Power Dissipation
1.4
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lb in (1.1N m)
N
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
–––
0.50
–––
–––
0.70
–––
62
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D2Pak
°C/W
40
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1
09/05/06
IRGB/S4065PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 1.0 mA
Parameter
Collector-to-Emitter Breakdown Voltage 300
Min. Typ. Max. Units
BVCES
–––
–––
V
Reference to 25°C, ICE = 1.0 mA
∆ΒVCES/∆TJ
Breakdown Voltage Temp. Coefficient
Static Collector-to-Emitter Voltage
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
–––
—
0.23
–––
V/°C
VGE = 15V, ICE = 25A e
1.20 1.40
1.35 –––
1.75 2.10
VGE = 15V, ICE = 40A e
VGE = 15V, ICE = 70A e
VGE = 15V, ICE = 120A e
VGE = 15V, ICE = 70A, TJ = 150°C
VCE = VGE, ICE = 500µA
VCE(on)
V
V
2.35
2.00
–––
-11
2.0
50
–––
–––
5.0
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ
ICES
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
––– mV/°C
V
CE = 300V, VGE = 0V
VCE = 300V, VGE = 0V, TJ = 150°C
GE = 30V
VGE = -30V
CE = 25V, ICE = 25A
25
–––
100
-100
–––
–––
–––
—
µA
V
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
–––
–––
26
nA
V
gfe
Qg
Qgc
td(on)
tr
S
VCE = 200V, IC = 25A, VGE = 15V
See Fig. 14
62
nC
20
IC = 25A, VCC = 180V
RG = 10Ω, L=200µH, LS= 150nH
TJ = 25°C
30
—
26
—
ns
ns
td(off)
tf
td(on)
tr
td(off)
tf
Turn-Off delay time
Fall time
—
170
160
30
—
—
—
IC = 25A, VCC = 180V
RG = 10Ω, L=200µH, LS= 150nH
TJ = 150°C
Turn-On delay time
Rise time
—
—
—
28
—
Turn-Off delay time
Fall time
—
250
310
–––
—
—
—
tst
VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40µF, VGE = 15V
Shoot Through Blocking Time
100
–––
ns
µJ
–––
–––
875
975
–––
–––
EPULSE
VCC = 240V, RG= 5.1Ω, TJ = 25°C
Energy per Pulse
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
Ciss
Coss
Crss
LC
Input Capacitance
––– 2200 –––
VCE = 30V
Output Capacitance
–––
–––
–––
110
55
–––
–––
–––
pF
ƒ = 1.0MHz,
See Fig.13
Reverse Transfer Capacitance
Internal Collector Inductance
5.0
Between lead,
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
13
–––
and center of die contact
Notes:
Half sine wave with duty cycle = 0.25, ton=1µsec.
R is measured at TJ of approximately 90°C.
θ
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRGB/S4065PbF
280
240
200
160
120
80
280
240
200
160
120
80
TOP
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
TOP
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
V
V
GE
GE
V
V
GE
GE
V
V
GE
GE
V
V
GE
GE
BOTTOM
V
BOTTOM
V
GE
GE
40
40
0
0
0
2
4
6
8
10 12 14 16
(V)
0
2
4
6
8
10 12 14 16
(V)
V
V
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
360
280
TOP
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
TOP
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
V
V
320
280
240
200
160
120
80
GE
GE
240
200
160
120
80
V
V
GE
GE
V
V
GE
GE
V
V
GE
GE
BOTTOM
V
BOTTOM
V
GE
GE
40
40
0
0
0
2
4
6
8
10 12 14 16
(V)
0
2
4
6
8
10 12 14 16
(V)
V
V
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
600
500
20
I
= 25A
C
15
10
5
400
300
200
100
0
T
= 25°C
J
T
T
= 25°C
T
= 125°C
J
J
J
= 150°C
0
0
5
10
15
20
0
5
10
15
20
V
, Gate-to-Emitter Voltage (V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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3
IRGB/S4065PbF
80
70
60
50
40
30
20
10
0
220
200
180
160
140
120
100
80
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
60
40
20
0
0
25
50
75
100
125
150
25
50
75
100
125
150
Case Temperature (°C)
T
, Case Temperature (°C)
C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
1000
1000
V
= 240V
L = 220nH
C = 0.4µF
CC
900
800
700
600
500
400
300
200
L = 220nH
C = variable
900
800
700
600
500
400
100°C
100°C
25°C
25°C
160 170 180 190 200 210 220 230
150 160 170 180 190 200 210 220 230 240
Collector-to-Emitter Voltage (V)
I , Peak Collector Current (A)
C
V
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
1400
1000
OPERATION IN THIS AREA
V
= 240V
CC
LIMITED BY V (on)
CE
L = 220nH
t = 1µs half sine
1200
1000
800
C= 0.4µF
10µsec
100
100µsec
C= 0.3µF
C= 0.2µF
600
10
1msec
400
200
1
25
50
75
100
125
150
1
10
100
1000
T , Temperature (ºC)
V
(V)
J
CE
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRGB/S4065PbF
100000
10000
1000
100
25
20
15
10
5
V
= 0V,
= C
f = 1 MHZ
+ C , C
GS
I
= 25A
C
C
C
C
SHORTED
ies
res
oes
ge
gd
ce
= C
gc
= C + C
ce
gc
V
V
V
= 240V
CE
= 200V
= 150V
CE
CE
Cies
Coes
Cres
0
10
0
10 20 30 40 50 60 70 80
, Total Gate Charge (nC)
0
50
100
150
200
250
300
Q
G
V
, Collector-toEmitter-Voltage(V)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
D = 0.50
0.20
0.1
0.10
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.05
0.0239
0.1179
0.3264
0.2324
0.000011
0.000047
0.000922
0.004889
τ
τ
J τJ
τ
0.02
0.01
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2τ2
3τ3
4τ4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRGB/S4065PbF
A
RG
C
PULSEA
PULSEB
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
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IRGB/S4065PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
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TO-220AB package is not recommended for Surface Mount Application.
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7
IRGB/S4065PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
25
8
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IRGB/S4065PbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
26.40 (1.039)
24.40 (.961)
4
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product, and
no specifications or features are implied whether by industry
custom, sampling or otherwise. We qualify our products in
accordance with our internal practices and procedures, which by
their nature do not include qualification to all possible or even all
widely used applications. Without limitation, we have not qualified
our product for medical use or applications involving hi-reliability
applications. Customers are encouraged to and responsible for
qualifying product to their own use and their own application
environments, especially where particular features are critical to
operational performance or safety. Please contact your IR
representative if you have specific design or use requirements or
for further information.
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/06
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9
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