IRGB4055PBF [INFINEON]
Advanced Trench IGBT Technology; 先进的沟道IGBT技术
| 型号： | IRGB4055PBF |
| 厂家： | 
Infineon |
| 描述： | Advanced Trench IGBT Technology |
| 文件： | 总7页 (文件大小：621K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97058
IRGB4055PbF
Key Parameters
PDP TRENCH IGBT
Features
VCE min
300
V
l
Advanced Trench IGBT Technology
VCE(ON) typ. @ 110A
1.70
V
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
I
RP max @ TC= 25°C c
270
150
A
°C
TM
l
)
TJ max
l
l
High repetitive peak current capability
Lead Free package
C
G
E
TO-220AB
n-channel
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Absolute Maximum Ratings
Max.
±30
Parameter
Gate-to-Emitter Voltage
Units
V
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
110
A
60
270
c
Repetitive Peak Current
Power Dissipation
255
W
102
Power Dissipation
2.04
Linear Derating Factor
Operating Junction and
W/°C
°C
TJ
-40 to + 150
TSTG
Storage Temperature Range
300
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
x
x
10lb in (1.1N m)
N
Thermal Resistance
Parameter
d
Typ.
–––
Max.
0.49
Units
°C/W
Rθ
Junction-to-Case
JC
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1
10/13/05
IRGB4055PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 1 mA
Reference to 25°C, ICE = 1mA
Parameter
Collector-to-Emitter Breakdown Voltage 300
Breakdown Voltage Temp. Coefficient
Static Collector-to-Emitter Voltage
Min. Typ. Max. Units
BVCES
∆Β
–––
–––
V
∆
VCES/ TJ
–––
–––
–––
–––
–––
2.6
0.23
––– V/°C
e
GE = 15V, ICE = 35A
V
1.10 1.30
1.70 2.10
V
V
V
V
V
e
e
VGE = 15V, ICE = 110A
GE = 15V, ICE = 200A
VCE(on)
V
2.35
1.95
–––
-11
–––
–––
5.0
VGE = 15V, ICE = 110A, TJ = 150°C
VCE = VGE, ICE = 1mA
VGE(th)
Gate Threshold Voltage
∆
∆
VGE(th)/ TJ
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
100
––– mV/°C
VCE = 300V, VGE = 0V
ICES
2.0
25
µA
VCE = 300V, VGE = 0V, TJ = 150°C
100
–––
–––
100
V
GE = 30V
VGE = -30V
CE = 25V, ICE = 35A
VCE = 200V, IC = 35A, VGE = 15V
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
––– -100
V
gfe
Qg
Qgc
tst
38
132
42
–––
–––
–––
–––
S
nC
e
Gate-to-Collector Charge
Ω
V
CC = 240V, VGE = 15V, RG= 5.1
L = 220nH, C= 0.40µF, VGE = 15V
CC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
Ω,
Shoot Through Blocking Time
–––
ns
µJ
–––
–––
705
915
–––
–––
V
EPULSE
Energy per Pulse
VCC = 240V, RG= 5.1
GE = 0V
TJ = 100°C
V
Ciss
Coss
Crss
LC
Input Capacitance
––– 4280 –––
VCE = 30V
Output Capacitance
–––
–––
–––
200
125
5.0
–––
–––
–––
pF
ƒ = 1.0MHz,
Between lead,
See Fig.13
Reverse Transfer Capacitance
Internal Collector Inductance
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
13
–––
and center of die contact
Notes:
Half sine wave with duty cycle = 0.25, ton=1µsec.
R is measured at TJ of approximately 90°C.
θ
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRGB4055PbF
200
150
100
50
200
150
100
50
Top
V
= 18V
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
GE
GE
V
GE
V
GE
V
GE
V
GE
V
GE
V
GE
Bottom
V
GE
Bottom
V
GE
0
0
0.0
0.5
1.0
1.5
2.0
(V)
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
(V)
2.5
3.0
3.5
V
V
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
200
200
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
V
V
GE
GE
V
V
GE
GE
V
V
150
100
50
150
100
50
GE
GE
V
V
GE
GE
Bottom
V
Bottom
V
GE
GE
0
0
0.0
0.5
1.0
1.5
2.0
(V)
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
(V)
2.5
3.0
3.5
V
V
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
20
300
I
= 35A
C
T
= 25°C
J
250
200
150
100
50
15
10
5
T
= 150°C
J
T = 25°C
J
T = 150°C
J
10µs PULSE WIDTH
10 15
0
0
5
10
15
20
0
5
V
(V)
V
Gate-to-Emitter Voltage (V)
GE
GE,
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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3
IRGB4055PbF
120
300
280
260
240
220
200
180
160
140
120
100
80
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Limited By Package
100
80
60
40
20
0
60
40
20
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Case Temperature (°C)
Fig 8. Typical Repetitive Peak Current vs. Case
Temperature
T
, Case Temperature (°C)
C
Fig 7. Maximum Collector Current vs. Case Temperature
1000
1000
V
= 240V
L = 220nH
C = 0.4µF
CC
900
800
700
600
500
400
300
200
900
800
700
600
500
400
300
L = 220nH
C = variable
100°C
100°C
25°C
25°C
160 170 180 190 200 210 220 230
150 160 170 180 190 200 210 220 230 240
Collector-to-Emitter Voltage (V)
I , Peak Collector Current (A)
c
V
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
1200
1000
OPERATION IN THIS AREA
V
= 240V
CC
LIMITED BY V (on)
CE
L = 220nH
t = 1µs half sine
C= 0.4µF
1000
800
600
400
200
1µsec
100
10
1
10µsec
C= 0.3µF
C= 0.2µF
100µsec
25
50
75
100
125
150
1
10
100
1000
T , Temperature (ºC)
J
V
(V)
CE
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRGB4055PbF
100000
10000
1000
100
16
14
12
10
8
V
= 0V,
= C
f = 1 MHZ
+ C , C
GS
C
C
C
SHORTED
ce
ies
res
oes
ge
gd
I
= 30A
= 35A
= C
C
gc
= C + C
ce
I
gc
C
Cies
6
Coes
Cres
4
2
10
0
0
50
100
150
200
0
25
50
75
100
125
150
V
, Collector-toEmitter-Voltage(V)
CE
Q
, Total Gate Charge (nC)
G
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.02
0.01
0.001
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGB4055PbF
A
RG
C
PULSEA
PULSEB
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
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IRGB4055PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB package is not recommended for Surface Mount Application.
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
procedures, which by their nature do not include qualification to
all possible or even all widely used applications. Without
limitation, we have not qualified our product for medical use or
applications involving hi-reliability applications. Customers are
encouraged to and responsible for qualifying product to their
own use and their own application environments, especially
where particular features are critical to operational performance
or safety. Please contact your IR representative if you have
specific design or use requirements or for further information.
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/05
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