IRGB4056DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGB4056DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总10页 (文件大小：763K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97188
IRGB4056DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology
C
VCES = 600V
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
IC = 12A, TC = 100°C
• SquareRBSOA
G
tSC ≥ 5µs, TJ(max) = 175°C
• 100% of the parts tested for 4X rated current (ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tightparameterdistribution
)
E
VCE(on) typ. = 1.55V
n-channel
• LeadFreePackage
Benefits
C
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• RuggedtransientPerformanceforincreasedreliability
• ExcellentCurrentsharinginparalleloperation
• Low EMI
E
C
G
TO-220AB
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
600
V
IC @ TC = 25°C
24
IC @ TC = 100°C
12
48
ICM
Clamped Inductive Load Current
ILM
48
A
IF @ TC = 25°C
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
24
IF @ TC = 100°C
12
IFM
48
VGE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
±20
±30
140
70
V
PD @ TC = 25°C
W
PD @ TC = 100°C
TJ
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
80
Max.
1.07
3.66
–––
Units
°C/W
RθJC (IGBT)
RθJC (Diode)
RθCS
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
1
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02/24/06
IRGB4056DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
CT6
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 100µA
V(BR)CES
600
—
—
—
—
4.0
—
—
—
—
—
—
—
—
0.30
1.55
1.90
1.97
—
—
V
∆V(BR)CES/∆TJ
V
GE = 0V, IC = 1mA (25°C-175°C)
CT6
Temperature Coeff. of Breakdown Voltage
—
V/°C
IC = 12A, VGE = 15V, TJ = 25°C
IC = 12A, VGE = 15V, TJ = 150°C
IC = 12A, VGE = 15V, TJ = 175°C
5,6,7
1.85
—
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
V
9,10,11
—
V
V
V
CE = VGE, IC = 350µA
Gate Threshold Voltage
6.5
—
V
mV/°C
S
9, 10,
∆
∆
VGE(th)/ TJ
CE = VGE, IC = 1.0mA (25°C - 175°C)
CE = 50V, IC = 12A, PW = 80µs
11, 12
Threshold Voltage temp. coefficient
Forward Transconductance
-18
gfe
7.7
—
ICES
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 12A
Collector-to-Emitter Leakage Current
2.0
25
µA
475
2.10
1.61
—
—
VFM
IGES
8
Diode Forward Voltage Drop
3.10
—
V
IF = 12A, TJ = 175°C
VGE = ±20V
Gate-to-Emitter Leakage Current
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
24
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
IC = 12A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
25
7.0
11
38
11
16
118
273
391
40
24
94
31
—
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
V
GE = 15V
CT1
nC
µJ
ns
VCC = 400V
IC = 12A, VCC = 400V, VGE = 15V
RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 12A, VCC = 400V, VGE = 15V
CT4
CT4
75
225
300
31
Ω
G = 22 , L = 200µH, LS = 150nH, TJ = 25°C
R
17
td(off)
tf
Turn-Off delay time
Fall time
83
24
Eon
Eoff
Etotal
td(on)
tr
IC = 12A, VCC = 400V, VGE=15V
13, 15
CT4
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
185
355
540
30
Ω
RG=22 , L=100µH, LS=150nH, TJ = 175°C
—
µJ
ns
pF
Energy losses include tail & diode reverse recovery
IC = 12A, VCC = 400V, VGE = 15V
RG = 22Ω, L = 200µH, LS = 150nH
TJ = 175°C
WF1, WF2
14, 16
CT4
—
—
18
—
td(off)
tf
WF1
Turn-Off delay time
Fall time
102
41
—
WF2
—
Cies
Coes
Cres
V
GE = 0V
23
Input Capacitance
765
52
—
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
23
—
f = 1.0Mhz
TJ = 175°C, IC = 48A
4
V
CC = 480V, Vp =600V
Rg = 22Ω, VGE = +15V to 0V
CC = 400V, Vp =600V
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
CT2
V
22, CT3
WF4
5
—
—
µs
Rg = 22Ω, VGE = +15V to 0V
TJ = 175°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
280
68
—
—
—
µJ
ns
A
17, 18, 19
20, 21
WF3
VCC = 400V, IF = 12A
Ω
VGE = 15V, Rg = 22 , L =200µH, Ls = 150nH
Irr
Peak Reverse Recovery Current
19
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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IRGB4056DPbF
25
20
15
10
5
150
125
100
75
50
25
0
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
T
(°C)
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10µsec
10
100µsec
1msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
1
10
100
(V)
1000
10000
10
100
(V)
1000
V
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
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3
IRGB4056DPbF
45
80
70
60
50
40
30
20
10
0
V
= 18V
GE
40
35
30
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
-40°c
25°C
175°C
0
0
1
2
3
4
5
6
7
8
0.0
1.0
2.0
(V)
3.0
4.0
V
F
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = 80µs
tp = 80µs
20
18
16
14
12
20
18
16
14
12
I
I
I
= 6.0A
= 12A
= 24A
I
I
I
= 6.0A
= 12A
= 24A
CE
CE
CE
CE
CE
CE
10
8
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
50
40
30
20
10
0
20
18
16
14
12
10
8
T = 25°C
J
T
= 175°C
J
I
I
I
= 6.0A
CE
CE
CE
= 12A
= 24A
6
4
2
0
0
5
10
15
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
CE = 50V; tp = 10µs
TJ = 175°C
V
4
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IRGB4056DPbF
800
700
600
500
400
300
200
100
0
1000
100
10
td
t
OFF
E
OFF
F
td
ON
E
ON
t
R
1
0
10
20
30
5
10
15
(A)
20
25
I
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V
TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V
500
1000
450
400
E
OFF
350
300
td
OFF
100
250
200
150
100
50
E
ON
t
F
td
ON
t
R
10
0
25
50
Rg (
75
100
125
0
25
50
75
(Ω)
100
125
R
G
Ω
)
Fig. 16 - Typ. Switching Time vs. RG
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V
25
25
Ω
10
R
G =
20
15
10
5
20
15
10
5
Ω
22
R
G =
Ω
47
R
G =
Ω
100
R
G =
0
0
10
20
30
0
25
50
75
Ω)
100
125
I
(A)
R
(
F
G
Fig. 17 - Typ. Diode IRR vs. IF
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
TJ = 175°C
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5
IRGB4056DPbF
1400
1200
1000
800
25
20
15
10
5
24A
10Ω
22Ω
47Ω
12A
600
100Ω
400
6.0A
200
0
0
500
1000
1500
0
500
1000
1500
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typ. Diode QRR vs. diF/dt
CC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 12A; TJ = 175°C
V
120
20
18
16
14
12
10
8
400
Ω
R
= 10
G
110
100
90
80
70
60
50
40
30
20
350
300
250
200
150
100
50
Ω
= 22
R
G
Ω
= 47
R
G
Ω
R
= 100
G
6
4
2
0
0
8
10
12
14
(V)
16
18
0
10
20
30
I
(A)
V
GE
F
Fig. 22 - VGE vs. Short Circuit Time
Fig. 21 - Typ. Diode ERR vs. IF
VCC = 400V; TC = 25°C
TJ = 175°C
16
14
12
10
8
10000
1000
100
V
V
= 300V
= 400V
CES
CES
Cies
6
4
Coes
Cres
2
0
10
0
5
10
15
20
25
30
0
20
40
60
(V)
80
100
Q
, Total Gate Charge (nC)
V
G
CE
Fig. 24 - Typical Gate Charge vs. VGE
Fig. 23 - Typ. Capacitance vs. VCE
ICE = 12A; L = 600µH
VGE= 0V; f = 1MHz
6
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IRGB4056DPbF
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.1
0.02
0.01
τ
J τJ
τ
τ
Cτ
0.358
0.424
0.287
0.000171
0.001361
0.009475
τ
1τ1
τ
2 τ2
3τ3
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
0.1
0.02
0.01
Ri (°C/W) τi (sec)
τ0.821094 0.000233
τ
J τJ
τ
τC
τ
1τ1
τ
2 τ2
3τ3
1.913817 0.001894
0.926641 0.014711
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGB4056DPbF
L
L
80 V
VCC
DUT
DUT
480V
0
Rg
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4x
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
C force
400µH
R =
I
CM
D1
10K
C sense
DUT
VCC
G force
DUT
0.0075µ
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
8
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IRGB4056DPbF
500
400
300
200
100
0
25
20
15
10
5
500
400
300
200
100
0
50
40
30
tr
tf
TEST
20
90% ICE
90% test
5% ICE
10
10% test
5% VCE
5% VCE
0
0
EOFF Loss
EON
-100
-5
-100
-10
-0.50 0.00 0.50 1.00 1.50 2.00
11.70 11.80 11.90 12.00 12.10
Time(µs)
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
25
500
400
300
200
100
0
250
200
150
100
50
20
QRR
15
tRR
10
VCE
5
0
ICE
-5
-10
-15
-20
-25
10%
Peak
IRR
Peak
IRR
0
-100
-50
-0.05
0.05
0.15
-5.00
0.00
5.00
10.00
time (µS)
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
@ TJ = 175°C using Fig. CT.4
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9
IRGB4056DPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/06
10
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