IRGB4059DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 超快软恢复DIODEINSULATED栅双极晶体管绝缘栅双极晶体管超快软恢复二极管
| 型号： | IRGB4059DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总10页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97072A
IRGB4059DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
C
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
Features
IC = 4.0A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.75V
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
G
E
• Square RBSOA
n-channel
• 100% of The Parts Tested for 4X Rated Current (ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
)
C
Benefits
• High Efficiency in a Wide Range of Applications
E
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
C
G
TO-220AB
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC@ TC = 25°C
IC@ TC = 100°C
ICM
8
4
16
16
8
Clamped Inductive Load Current c
ILM
A
IF@TC=25°C
IF@TC=100°C
IFM
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current d
4
16
± 20
± 30
56
28
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
V
VGE
PD @ TC =25°
PD @ TC =100°
TJ
W
°C
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Junction-to-Case - IGBT e
Junction-to-Case - Diode e
Min.
Typ.
Max.
2.70
6.30
Units
°C/W
g
RθJC
RθJC
RθCS
RθJA
Wt
Case-toSink, flat, greased surface
0.5
80
Junction-to-Ambient, typical socket mount e
Weight
1.44
1
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4/14/06
IRGB4059DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
V
V
GE = 0V,Ic =100 µA
GE = 0V, Ic = 250 µA ( 25 -175 oC )
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
600
—
—
—
—
4.0
—
—
—
—
—
—
—
—
—
—
V
CT6
∆V(BR)CES/∆TJ
0.3
V/°C
IC = 4A, VGE = 15V, TJ = 25°C
IC = 4A, VGE = 15V, TJ = 150°C
IC = 4A, VGE = 15V, TJ = 175°C
1.75 2.05
VCE(on)
Collector-to-Emitter Saturation Voltage
2.15
2.20
—
—
6.5
—
—
25
—
V
5,6,7,9,
10 ,11
VGE(th)
V
V
V
V
CE = VGE, IC = 100 µA
Gate Threshold Voltage
V
mV/°C
S
9,10,11,12
-18
2.0
1
CE = VGE, IC = 250 µA ( 25 -175 oC )
CE = 50V, IC = 4A, PW =80µs
GE = 0V,VCE = 600V
∆VGE(th)/∆TJ
gfe
Threshold Voltage temp. coefficient
Forward Transconductance
ICES
µA
Collector-to-Emitter Leakage Current
VGE = 0v, VCE = 600V, TJ =175°C
IF = 4A
280
µA
8
VFM
1.60 2.30
V
Diode Forward Voltage Drop
IF = 4A, TJ = 175°C
1.30
—
—
IGES
VGE = ± 20 V
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Ref.Fig
24
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
9
2
13
3
IC = 4A
nC VCC = 400V
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
CT1
4
6
77
118
196
33
14
75
20
—
—
—
—
—
—
—
—
—
—
35
75
110
25
10
65
15
90
120
210
20
15
85
35
240
25
10
IC = 4A, VCC = 400V, VGE = 15V
µJ RG = 100Ω, L=1mH, LS= 150nH, TJ = 25°C
Energy losses include tail and diode reverse recovery
IC = 4A, VCC = 400V
CT4
CT4
ns RG = 100Ω, L=1mH, LS= 150nH
TJ = 25°C
td(off)
tf
Turn-Off delay time
Fall time
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
IC = 4A, VCC = 400V, VGE = 15V
µJ RG = 100Ω, L=1mH, LS= 150nH, TJ = 175°C
Energy losses include tail and diode reverse recovery
IC = 4A, VCC = 400V
13,15
CT4
WF1,WF2
14,16
ns RG = 100Ω, L=1mH, LS= 150nH
TJ = 175°C
CT4
td(off)
tf
Turn-Off delay time
Fall time
WF1,WF2
Cies
Coes
Cres
Input Capacitance
VGE = 0V
22
pF
Output Capacitance
Reverse Transfer Capacitance
VCC = 30V
f = 1Mhz
TJ = 175°C, IC = 16A
VCC = 480V, Vp =600V
Rg = 100Ω, VGE = +15V to 0V
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
V
CC = 400V, Vp =600V
22, CT3
WF4
SCSOA
Short Circuir Safe Operating Area
5
µs
RG = 100Ω, VGE = +15V to 0V
TJ = 175oC
Erec
trr
Reverse recovery energy of the diode
Diode Reverse recovery time
145
55
µJ
ns
A
17,18,19
20,21
V
CC = 400V, IF = 4A
Irr
Peak Reverse Recovery Current
11
VGE = 15V, Rg = 100Ω, L=1mH, LS=150nH
WF3
Notes:
VCC = 80% (VCES), VGE = 15V, L = 100 µH, RG = 100 Ω.
Pulse width limited by max. junction temperature.
Rθ is measured at TJ approximately 90°C
Refer to AN-1086 for guide lines for measuring V(BR)CES safely
2
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IRGB4059DPbF
9
8
7
6
5
4
3
2
1
0
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
T
T
(°C)
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
10
10 µs
100 µs
1
1ms
DC
0.1
10
100
1000
1
10
100
1000
V
(V)
V
(V)
CE
CE
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VCE = 15V
Fig. 3 - Forward SOA,
TC = 25°C; TJ ≤ 175°C
16
12
8
16
12
8
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
4
4
0
0
0
2
4
6
8
0
2
4
6
8
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
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3
IRGB4059DPbF
16
80
70
60
50
40
30
20
10
0
V
= 18V
-40°C
25°C
175°C
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
12
8
4
0
0
2
4
6
8
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
V
(V)
V (V)
F
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = 80µs
tp = 80µs
20
20
18
16
14
12
10
8
18
16
14
12
10
8
I
I
I
= 2.0A
= 4.0A
= 8.0A
I
I
I
= 2.0A
= 4.0A
= 8.0A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
20
18
16
14
12
10
8
18
16
14
12
10
8
T
T
= 25°C
J
J
= 175°C
I
I
I
= 2.0A
= 4.0A
= 8.0A
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
0
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 175°C
4
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IRGB4059DPbF
1000
100
10
250
200
150
100
50
td
OFF
t
F
E
OFF
td
ON
E
ON
t
R
0
1
0
5
10
0
5
10
I
(A)
C
I
(A)
C
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 100Ω; VGE = 15V.
140
1000
100
10
E
OFF
120
100
td
OFF
E
ON
80
60
40
20
0
t
F
td
t
ON
R
1
0
25
50
75
100
125
0
25
50
75
100
125
R
(Ω)
G
R
(Ω)
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 4A; VGE = 15V
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 4A; VGE= 15V
18
16
18
16
14
12
10
8
R
10 Ω
G =
14
12
10
8
R
22 Ω
G =
R
47 Ω
G =
6
6
R
100Ω
G =
4
4
2
2
0
0
0
5
10
0
25
50
75
100
125
I
(A)
R
(Ω)
F
G
Fig. 17 - Typical Diode IRR vs. IF
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C
TJ = 175°C; IF = 4.0A
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5
IRGB4059DPbF
800
700
600
500
400
300
200
100
0
20
10Ω
22Ω
8.0A
47 Ω
15
10
5
100Ω
4.0A
2.0A
0
0
500
1000
1500
0
500
1000
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 4A; TJ = 175°C
25
20
15
10
5
25
20
15
10
5
250
200
150
100
50
10 Ω
22 Ω
47 Ω
100 Ω
0
0
0
8
10
12
14
16
18
0
5
10
V
(V)
I
(A)
GE
F
Fig. 22- Typ. VGE vs Short Circuit Time
Fig. 21 - Typical Diode ERR vs. IF
VCC=400V, TC =25°C
TJ = 175°C
1000
100
10
16
14
12
10
8
Cies
300V
400V
Coes
Cres
6
4
2
0
1
0
20
40
60
(V)
80
100
0
2
4
6
8
10
Q
, Total Gate Charge (nC)
V
G
CE
Fig. 23- Typ. Capacitance vs. VCE
Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 4A, L=600µH
6
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IRGB4059DPbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
0.02
0.01
Ri (°C/W) τι (sec)
0.932018 0.000205
1.112118 0.00129
0.657365 0.010446
τ
J τJ
τ
τ
Cτ
τ
1 τ1
τ
2 τ2
3τ3
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τi/Ri
Ci= τi/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W) τι (sec)
J τJ
τ
τ
Cτ
1.628158 0.000205
3.159113 0.00129
1.512729 0.010446
τ
1 τ1
τ
2 τ2
3τ3
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τi/Ri
0.01
0.001
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGB4059DPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
8
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IRGB4059DPbF
500
400
300
200
100
0
10
8
500
400
300
200
100
0
25
20
tr
6
15
90% test
tf
4
10
5
90% ICE
5% VCE
5% ICE
TEST
10% test current
2
5% VCE
0
0
EOFF Loss
EON Loss
-100
-5
-100
-2
11.90
12.10
12.30
-0.40
0.60
Time(µs)
1.60
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
500
50
40
30
20
10
0
10
QRR
tRR
400
300
200
100
0
5
0
VCE
ICE
10%
Peak
-5
Peak
IRR
IRR
-10
-15
-100
-10
-4.00
1.00
time (µS)
6.00
-0.05
0.05
0.15
0.25
time (µS)
WF.3- Typ. Reverse Recovery Waveform
@ TJ = 175°C using CT.4
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
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9
IRGB4059DPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
PART NUMBER
LOT CODE 1789
ASSEMBLED ON WW 19, 2000
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 0 = 2000
WEEK 19
Note: "P" in assembly lineposition
indicates "L ead - F ree"
ASSEMBLY
LOT CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/06
10
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