IRGB4064DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 超快软恢复DIODEINSULATED栅双极晶体管绝缘栅双极晶体管超快软恢复二极管
| 型号： | IRGB4064DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总10页 (文件大小：371K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97113
IRGB4064DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
C
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
IC = 10A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.6V
G
E
n-channel
C
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
E
C
G
TO-220AB
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
600
20
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC@ TC = 25°C
IC@ TC = 100°C
ICM
10
40
Clamped Inductive Load Current c
ILM
40
A
IF@TC=25°C
IF@TC=100°C
IFM
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current d
20
10
40
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
±20
±30
101
50
V
VGE
PD @ TC =25°
PD @ TC =100°
TJ
W
°C
Maximum Power Dissipation
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
Junction-to-Case - IGBT e
Junction-to-Case - Diode e
Min.
Typ.
–––
Max.
1.49
3.66
–––
62
Units
RθJC
RθJC
RθCS
RθJA
Wt
–––
–––
–––
–––
–––
°C/W
Case-to-Sink, flat, greased surface
0.50
–––
Junction-to-Ambient, typical socket mount e
Weight
1.44
g
1
www.irf.com
11/28/06
IRGB4064DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
600
—
—
—
—
4.0
—
—
—
—
—
—
—
—
0.47
1.6
1.9
2.0
—
—
—
V
VGE = 0V, IC = 100µA
CT6
∆V(BR)CES/∆TJ
V/°C VGE = 0V, IC = 500µA (-55°C-175°C)
IC = 10A, VGE = 15V, TJ = 25°C
1.91
—
VCE(on)
Collector-to-Emitter Saturation Voltage
V
IC = 10A, VGE = 15V, TJ = 150°C
IC = 10A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 275µA
5,6,7,9,
10 ,11
—
VGE(th)
∆VGE(th)/∆TJ
gfe
Gate Threshold Voltage
6.5
—
V
9,10,11,12
Threshold Voltage temp. coefficient
Forward Transconductance
-11
6.9
—
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
CE = 50V, IC = 10A, PW = 80µs
µA VGE = 0V, VCE = 600V
—
S
V
ICES
Collector-to-Emitter Leakage Current
25
—
328
2.5
1.7
—
V
GE = 0V, VCE = 600V, TJ = 175°C
8
VFM
Diode Forward Voltage Drop
3.1
—
V
IF = 10A
IF = 10A, TJ = 175°C
IGES
Gate-to-Emitter Leakage Current
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Ref.Fig
24
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
21
5.3
8.9
29
32
8.0
13
71
308
339
37
23
90
30
—
IC = 10A
nC VGE = 15V
VCC = 400V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
CT1
IC = 10A, VCC = 400V, VGE = 15V
µJ RG = 22Ω, L = 1.0mH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 10A, VCC = 400V, VGE = 15V
200
229
27
CT4
CT4
15
ns RG = 22Ω, L = 1.0mH, TJ = 25°C
td(off)
tf
Turn-Off delay time
Fall time
79
21
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
99
IC = 10A, VCC = 400V, VGE = 15V
µJ RG=22Ω, L=1.0mH, TJ = 175°C
Energy losses include tail & diode reverse recovery
IC = 10A, VCC = 400V, VGE = 15V
13,15
CT4
316
415
27
—
—
WF1,WF2
14,16
—
16
—
ns RG = 22Ω, L = 1.0mH, TJ = 175°C
CT4
td(off)
tf
Turn-Off delay time
Fall time
98
—
WF1,WF2
33
—
Cies
Coes
Cres
Input Capacitance
594
49
—
pF VGE = 0V
22
Output Capacitance
Reverse Transfer Capacitance
—
VCC = 30V
17
—
f = 1.0Mhz
TJ = 175°C, IC = 40A
VCC = 480V, Vp =600V
Rg = 22Ω, VGE = +15V to 0V
4
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
CT2
5
—
—
µs
V
CC = 400V, Vp =600V
22, CT3
WF4
Rg = 22Ω, VGE = +15V to 0V
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
191
62
—
—
—
µJ TJ = 175°C
17,18,19
20,21
ns VCC = 400V, IF = 10A
Irr
Peak Reverse Recovery Current
16
A
VGE = 15V, Rg = 22Ω, L=1.0mH
WF3
Notes:
VCC = 80% (VCES), VGE = 15V, L = 28 µH, RG = 22 Ω.
Pulse width limited by max. junction temperature.
Rθ is measured at TJ approximately 90°C
Refer to AN-1086 for guidelines for measuring V(BR)CES safely
2
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IRGB4064DPbF
24
20
16
12
8
120
100
80
60
40
20
0
4
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
10
0
20 40 60 80 100 120 140 160 180
T
T
(°C)
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
10µsec
100µsec
10
1msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
100
(V)
1000
1
10
100
1000
V
V
(V)
CE
CE
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VCE = 15V
Fig. 3 - Forward SOA,
TC = 25°C; TJ ≤ 175°C
40
30
20
10
0
40
30
20
10
0
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
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3
IRGB4064DPbF
40
80
70
60
50
40
30
20
10
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
-40°C
25°C
175°C
GE
GE
GE
GE
GE
30
20
10
0
0
2
4
6
8
10
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
V
(V)
V (V)
F
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = 80µs
tp = 80µs
20
20
18
16
14
12
10
8
18
16
14
12
10
8
I
I
I
= 5.0A
= 10A
= 20A
I
I
I
= 5.0A
= 10A
= 20A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
20
18
16
14
12
10
8
40
30
20
10
0
T
T
= 25°C
J
J
= 175°C
I
I
I
= 5.0A
= 10A
= 20A
CE
CE
CE
6
4
2
0
5
10
15
20
0
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 175°C
4
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IRGB4064DPbF
1000
100
10
600
500
400
300
200
100
0
td
OFF
t
F
E
OFF
td
ON
t
R
E
ON
16
1
0
4
8
12
(A)
20
24
0
4
8
12
(A)
16
20
24
I
C
I
C
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 22Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 22Ω; VGE = 15V.
350
1000
100
10
E
OFF
300
250
200
150
100
50
E
ON
td
OFF
td
ON
t
F
t
R
0
0
25
50
75
100
125
0
25
50
75
100
125
R
(Ω)
G
R
(Ω)
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 10A; VGE = 15V
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 10A; VGE= 15V
24
20
16
12
8
20
R
10 Ω
G =
16
12
8
R
22 Ω
G =
R
47 Ω
G =
R
100Ω
G =
4
4
0
0
0
4
8
12
(A)
16
20
24
0
25
50
75
100
125
I
R
(Ω)
F
G
Fig. 17 - Typical Diode IRR vs. IF
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C
TJ = 175°C; IF = 10A
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5
IRGB4064DPbF
20
900
800
700
600
500
400
300
10Ω
20A
22Ω
47 Ω
15
10
5
100Ω
10A
5.0A
0
200
400
600
800 1000 1200
0
500
1000
1500
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 10A; TJ = 175°C
80
16
300
250
200
150
100
50
T
sc
R
R
10Ω
G =
70
60
50
40
30
20
10
0
14
12
10
8
I
sc
22Ω
47Ω
G =
R
R
G =
6
100Ω
4
G =
2
0
0
8
10
12
(V)
14
16
0
2
4
6
8
10 12 14 16 18 20 22
(A)
V
I
GE
F
Fig. 22- Typ. VGE vs Short Circuit Time
Fig. 21 - Typical Diode ERR vs. IF
VCC=400V, TC =25°C
TJ = 175°C
1000
100
10
16
Cies
14
12
10
8
300V
400V
Coes
Cres
6
4
2
0
1
0
4
8
12
16
20
24
0
20
40
60
(V)
80
100
Q
, Total Gate Charge (nC)
G
V
CE
Fig. 23- Typ. Capacitance vs. VCE
Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 10A, L=600µH
6
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IRGB4064DPbF
10
1
D = 0.50
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τι (sec)
0.20
0.10
τJ
0.007362
0
τC
τJ
τ1
τ
0.342317 0.000048
0.647826 0.000192
0.493231 0.001461
τ
τ
3 τ3
τ4
2τ2
τ1
τ4
0.1
0.05
0.02
0.01
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
, Rectangular Pulse Duration (sec)
0.001
0.01
t
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
0.1
0.02
0.01
Ri (°C/W) τι (sec)
1.939783 0.000975
1.721867 0.006135
τJ
τ
Cτ
τJ
τ1
τ
2τ2
τ1
Ci= τi/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGB4064DPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
8
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IRGB4064DPbF
500
400
300
200
100
0
10
8
TEST CURRENT
tf
25
350
275
200
125
50
tr
20
90% test current
90% ICE
6
15
4
10
5% ICE
10% test current
2
5% VCE
5
5% VCE
Eoff Loss
0
Eon Loss
0
-25
-0.04
0.06
0.16
-0.1
0.1
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
110
450
10
VC
-25
-100
-175
-250
-325
-400
-475
QRR
5
90
70
375
300
225
150
75
tRR
0
IC
-5
50
Peak
IRR
-10
10%
30
Peak
IRR
-15
10
-20
-10
0
-0.05
0.15
0.35
-5
0
5
10
time (µS)
Time (uS)
WF.3- Typ. Reverse Recovery Waveform
@ TJ = 175°C using CT.4
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
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9
IRGB4064DPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
PART NUMBER
LOT CODE 1789
ASSEMBLED ON WW 19, 2000
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 0 = 2000
WEEK 19
Note: "P" in assembly lineposition
indicates "L ead - F ree"
ASSEMBLY
LOT CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/06
10
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