IRGB30B60KPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRGB30B60KPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总13页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95356
IRGB30B60KPbF
IRGS30B60K
IRGSL30B60K
VCES = 600V
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
IC = 50A, TC=100°C
at TJ=175°C
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
G
• Square RBSOA.
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.95V
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• TO-220 is available in PbF as Lead-Free
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
IRGS30B60K
TO-262
IRGSL30B60K
TO-220AB
IRGB30B60KPbF
Absolute Maximum Ratings
Parameter
Max.
600
Units
V
Collector-to-Emitter Voltage
VCES
78
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
IC @ TC = 25°C
50
A
IC @ TC = 100°C
120
ICM
120
ILM
RMS Isolation Voltage, Terminal to Case, t=1 min.
Gate-to-Emitter Voltage
2500
±20
V
VISOL
VGE
Maximum Power Dissipation
370
W
PD @ TC = 25°C
Maximum Power Dissipation
180
PD @ TC = 100°C
Operating Junction and
-55 to +175
TJ
Storage Temperature Range
°C
TSTG
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
0.41
–––
62
Units
°C/W
Junction-to-Case- IGBT
RθJC
Case-to-Sink, flat, greased surface
0.50
–––
Rθ
CS
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, Steady State)
RθJA
–––
40
Rθ
JA
Weight
1.44
–––
g
Wt
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1
9/22/04
IRGB30B60KPbF, IRGS/L30B60K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 500µA
Ref.Fig.
V(BR)CES
600
—
—
—
—
3.5
—
—
—
—
—
—
—
—
V
∆
∆
V(BR)CES/ TJ
VCE(on)
VGE(th)
VGE = 0V, IC = 1mA (25°C-150°C)
Temperature Coeff. of Breakdown Voltage
0.40
—
V/°C
IC = 30A, VGE = 15V, TJ = 25°C
IC = 30A, VGE = 15V, TJ = 150°C
IC = 30A, VGE = 15V, TJ = 175°C
1.95 2.35
2.40 2.75
5,6,7
Collector-to-Emitter Voltage
V
8,9,10
2.6
4.5
-10
18
2.95
5.5
—
V
V
CE = VGE, IC = 250µA
Gate Threshold Voltage
V
mV/°C
S
8,9,10
11
∆
V
∆
GE(th)/ TJ
CE = VGE, IC = 1.0mA (25°C-150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
VCE = 50V, IC = 50A, PW = 80µs
VGE = 0V, VCE = 600V
gfe
—
5.0
250
ICES
IGES
V
GE = 0V, VCE = 600V, TJ = 150°C
VGE = 0V, VCE = 600V, TJ = 175°C
GE = ±20V, VCE = 0V
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
1000 2000 µA
1830 3000
V
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
17
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Qg
IC = 30A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
102
153
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
VCC = 400V
14
21
nC
µJ
ns
CT1
VGE = 15V
44
66
IC = 30A, VCC = 400V
350
825
620
955
CT4
CT4
V
GE = 15V, RG = 10Ω, L = 200µH
TJ = 25°C
1175 1575
IC = 30A, VCC = 400V
46
28
60
39
Ω
VGE = 15V, RG = 10 , L = 200µH
Rise time
td(off)
tf
TJ = 25°C
Turn-Off delay time
185
31
200
40
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 30A, VCC = 400V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
635 1085
1150 1350
1785 2435
CT4
12,14
WF1,WF2
13,15
CT4
Ω
VGE = 15V, RG = 10 , L = 200µH
µJ
ns
TJ = 150°C
IC = 30A, VCC = 400V
46
28
60
39
V
GE = 15V, RG = 10Ω, L = 200µH
Rise time
td(off)
tf
TJ = 150°C
Turn-Off delay time
205
32
235
42
WF1
Fall time
WF2
LE
Internal Emitter Inductance
Input Capacitance
7.5
—
nH Measured 5mm from package
GE = 0V
Cies
Coes
Cres
RBSOA
V
1750 2500
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
160
60
255
90
pF
16
f = 1.0MHz
TJ = 150°C, IC = 120A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG =10Ω
TJ = 150°C, Vp = 600V, RG = 10
VCC=360V,VGE = +15V to 0V
FULL SQUARE
4
CT2
CT3
WF3
WF3
Ω
SCSOA
Short Circuit Safe Operating Area
Peak Short Circuit Collector Current
10
—
—
µs
A
ISC (Peak)
—
200
—
Note to
ꢀ are on page 13
2
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IRGB30B60KPbF, IRGS/L30B60K
80
70
60
50
40
30
20
10
0
400
350
300
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
100
10
1000
100
10
1
10 µs
100 µs
1ms
DC
0.1
1
1
10
100
(V)
1000
10000
10
100
(V)
1000
V
CE
V
CE
Fig. 4 - Reverse Bias SOA
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
TJ = 150°C; VGE =15V
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3
IRGB30B60KPbF, IRGS/L30B60K
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
0
1
2
3
4
5
0
1
2
3
4
5
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
60
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
V
50
40
30
20
10
0
GE
V
GE
V
GE
V
GE
0
1
2
3
4
5
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
4
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IRGB30B60KPbF, IRGS/L30B60K
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 15A
= 30A
= 60A
I
I
I
= 15A
= 30A
= 60A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 8 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
250
200
150
100
50
20
18
16
14
12
10
8
T
T
= 25°C
J
J
= 150°C
I
I
I
= 15A
= 30A
= 60A
CE
CE
CE
6
T
= 150°C
J
4
T
= 25°C
15
2
J
0
0
0
5
10
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typ. Transfer Characteristics
TJ = 150°C
VCE = 50V; tp = 10µs
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5
IRGB30B60KPbF, IRGS/L30B60K
1000
100
10
3000
2500
2000
1500
1000
500
td
OFF
E
OFF
E
ON
td
ON
t
F
t
R
0
0
20
40
(A)
60
80
0
20
40
60
80
I
C
I
(A)
C
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L=200µH; VCE= 400V,
RG= 10Ω; VGE= 15V
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V
RG= 10Ω; VGE= 15V
10000
1000
100
3000
2500
2000
1500
1000
500
E
OFF
td
OFF
E
ON
td
ON
t
F
t
R
10
0
0
25
50
75
100
125
0
25
50
75
100
125
R
( )
Ω
R
( )
Ω
G
G
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 30A; VGE= 15V
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 400V
ICE= 30A; VGE= 15V
6
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IRGB30B60KPbF, IRGS/L30B60K
10000
1000
100
16
14
200V
Cies
12
10
8
400V
6
Coes
Cres
4
2
0
10
0
25
Q
50
75
100
125
0
20
40
60
80
100
, Total Gate Charge (nC)
G
V
(V)
CE
Fig. 16- Typ. Capacitance vs. VCE
Fig. 17 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 30A; L = 600µH
10
1
D = 0.50
0.20
0.1
R1
R1
R2
R2
0.10
Ri (°C/W) τi (sec)
τ
J τJ
τ
0.200
0.000428
τ
0.05
Cτ
1 τ1
Ci= τi/Ri
τ
0.01
0.001
0.0001
0.02
0.01
2τ2
0.209
0.013031
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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7
IRGB30B60KPbF, IRGS/L30B60K
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
ICM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
8
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IRGB30B60KPbF, IRGS/L30B60K
700
600
500
400
300
200
100
0
70
60
50
40
30
20
10
0
700
600
500
400
300
200
100
0
35
30
25
20
15
10
5
90% ICE
tf
TEST CURRENT
90% test current
5% VCE
tr
10% test current
5% VCE
5% ICE
0
Eon Loss
Eoff Loss
-100
-5
-100
-10
-0.20 0.00 0.20 0.40 0.60 0.80
15.90 16.00
16.10 16.20
Time (µs)
16.30
Time(µs)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
600
500
400
300
200
100
0
300
250
200
150
100
50
ICE
VCE
0
-5.00
0.00
5.00
time (µS)
10.00 15.00
Fig. WF3- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
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9
IRGB30B60KPbF, IRGS/L30B60K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMB LED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
INTE RNAT IONAL
RECT IFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S EMBLY
LOT CODE
LINE C
10
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IRGB30B60KPbF, IRGS/L30B60K
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T H IS IS AN IR F 530S WIT H
L OT CODE 8024
P AR T N U MB E R
IN T E R N AT IONAL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L INE "L "
F 530S
DAT E CODE
YE AR 0 = 2000
WE E K 02
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT CODE
L INE
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
F 530S
L OGO
D AT E COD E
P
=
D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
AS S E MB L Y
L OT COD E
YE AR
W E E K 02
A = AS S E MB L Y S IT E COD E
0 = 2000
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11
IRGB30B60KPbF, IRGS/L30B60K
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
E XAMPLE : THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW 19, 1997
RECTIFIER
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
Note: "P" in assembly line
pos ition indicates "Lead-Free"
AS S E MBL Y
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WE EK 19
A= ASSEMBLY SITE CODE
12
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IRGB30B60KPbF, IRGS/L30B60K
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
3.90 (.153)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω.
This is only applied to TO-220AB package.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
ꢀ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/04
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13
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