IRGB20B60PD1 [INFINEON]
SMPS IGBT; SMPS IGBT
| 型号： | IRGB20B60PD1 |
| 厂家： | 
Infineon |
| 描述： | SMPS IGBT |
| 文件： | 总10页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94613A
IRGB20B60PD1
SMPS IGBT
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
VCE(on) typ. = 2.05V
@ VGE = 15V IC = 13.0A
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
Equivalent MOSFET
Parameters
G
Features
RCE(on) typ. = 158mΩ
ID (FET equivalent) = 20A
E
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
n-channel
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
E
C
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
G
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
600
V
VCES
IC @ TC = 25°C
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
40
22
IC @ TC = 100°C
ICM
80
80
A
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
10
4
16
±20
V
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
215
W
86
-55 to +150
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
TSTG
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
0.58
5.0
Units
°C/W
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
Rθ (Diode)
JC
RθCS
0.50
–––
80
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
–––
Rθ
JA
2 (0.07)
–––
g (oz)
1
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12/10/03
IRGB20B60PD1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Internal Gate Resistance
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 500µA
Ref.Fig
4, 5,6,8,9
7,8,9
V(BR)CES
600
—
—
—
—
—
—
3.0
—
—
—
—
—
—
—
—
0.32
4.3
—
V
V/°C
Ω
∆V(BR)CES/∆TJ
VGE = 0V, IC = 1mA (25°C-125°C)
1MHz, Open Collector
—
RG
—
IC = 13A, VGE = 15V
2.05
2.50
2.65
3.30
4.0
2.35
2.80
3.00
3.70
5.0
—
VCE(on)
IC = 20A, VGE = 15V
Collector-to-Emitter Saturation Voltage
V
IC = 13A, VGE = 15V, TJ = 125°C
IC = 20A, VGE = 15V, TJ = 125°C
VGE(th)
∆VGE(th)/∆TJ
gfe
IC = 250µA
Gate Threshold Voltage
V
mV/°C
S
V
V
CE = VGE, IC = 1.0mA
Threshold Voltage temp. coefficient
Forward Transconductance
-11
19
CE = 50V, IC = 40A, PW = 80µs
—
ICES
VGE = 0V, VCE = 600V
Collector-to-Emitter Leakage Current
1.0
250
—
µA
VGE = 0V, VCE = 600V, TJ = 125°C
IF = 4.0A, VGE = 0V
0.1
mA
V
VFM
IGES
Diode Forward Voltage Drop
1.5
1.8
1.7
±100
10
IF = 4.0A, VGE = 0V, TJ = 125°C
VGE = ±20V, VCE = 0V
1.4
Gate-to-Emitter Leakage Current
—
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge (turn-on)
Conditions
Ref.Fig
17
IC = 13A
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
68
24
102
36
Qgc
V
CC = 400V
VGE = 15V
IC = 13A, VCC = 390V
CT1
Gate-to-Collector Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
nC
µJ
ns
Qge
10
15
Eon
CT3
CT3
95
140
145
285
26
Ω
Eoff
VGE = +15V, RG = 10 , L = 200µH
100
195
20
Etotal
td(on)
tr
TJ = 25°C
IC = 13A, VCC = 390V
V
GE = +15V, RG = 10Ω, L = 200µH
5.0
115
6.0
165
150
315
19
7.0
135
8.0
215
195
410
25
td(off)
tf
TJ = 25°C
Turn-Off delay time
Fall time
Eon
IC = 13A, VCC = 390V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
CT3
11,13
Eoff
V
GE = +15V, RG = 10Ω, L = 200µH
TJ = 125°C
C = 13A, VCC = 390V
µJ
ns
Etotal
td(on)
tr
WF1,WF2
CT3
I
Ω
VGE = +15V, RG = 10 , L = 200µH
6.0
125
13
8.0
140
17
12,14
td(off)
tf
TJ = 125°C
WF1,WF2
Turn-Off delay time
Fall time
Cies
Coes
Cres
Coes eff.
Coes eff. (ER)
V
V
GE = 0V
16
15
Input Capacitance
Output Capacitance
1560
95
—
CC = 30V
—
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
Effective Output Capacitance (Energy Related)
20
—
pF f = 1Mhz
VGE = 0V, VCE = 0V to 480V
83
—
61
—
TJ = 150°C, IC = 80A
CC = 480V, Vp =600V
3
V
RBSOA
Reverse Bias Safe Operating Area
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
FULL SQUARE
CT2
Ω
Rg = 22 , VGE = +15V to 0V
trr
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 4.0A, VR = 200V,
—
28
38
42
57
ns
nC
A
19
21
—
—
—
—
—
di/dt = 200A/µs
Qrr
IF = 4.0A, VR = 200V,
di/dt = 200A/µs
40
60
70
105
5.2
6.7
Irr
IF = 4.0A, VR = 200V,
di/dt = 200A/µs
2.9
3.7
19,20,21,22
CT5
Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ. / IC, where VCE(on) typ. = 2.05V and IC = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
ꢀ Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES
.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES
.
2
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IRGB20B60PD1
45
40
35
30
25
20
15
10
5
250
200
150
100
50
0
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
T
T
(°C)
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
40
35
30
25
20
15
10
5
V
= 15V
GE
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
0
0
10
100
(V)
1000
0
1
2
3
4
5
6
V
(V)
CE
V
CE
Fig. 3 - Reverse Bias SOA
Fig. 4 - Typ. IGBT Output Characteristics
TJ = 150°C; VGE =15V
TJ = -40°C; tp = 80µs
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
V
= 15V
V
= 18V
GE
GE
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
TJ = 25°C; tp = 80µs
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3
IRGB20B60PD1
10
9
8
7
6
5
4
3
2
1
0
450
400
350
I
I
I
= 20A
= 13A
= 8.0A
CE
CE
CE
T
= 25°C
J
300
250
200
150
100
50
T
= 125°C
J
0
0
5
10
15
20
0
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 7 - Typ. Transfer Characteristics
CE = 50V; tp = 10µs
Fig. 8 - Typical VCE vs. VGE
V
TJ = 25°C
10
9
8
7
6
5
4
3
2
1
0
100
10
1
I
I
I
= 20A
CE
CE
CE
= 13A
T = 150°C
J
= 8.0A
T = 125°C
J
T = 25°C
J
0.1
0
5
10
15
20
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - V
(V)
FM
V
(V)
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typ. Diode Forward Characteristics
TJ = 125°C
tp = 80µs
350
300
250
200
150
100
50
1000
E
ON
td
OFF
100
td
E
ON
OFF
t
F
10
1
t
R
0
0
5
10
15
20
25
0
5
10
15
(A)
20
25
I
(A)
I
C
C
Fig. 11 - Typ. Energy Loss vs. IC
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 10Ω; VGE = 15V.
TJ = 125°C; L = 200µH; VCE = 390V, RG = 10Ω; VGE = 15V.
Diode clamp used: 8ETH06 (See C.T.3)
Diode clamp used: 8ETH06 (See C.T.3)
4
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IRGB20B60PD1
1000
100
10
250
200
150
100
50
td
OFF
E
ON
E
td
OFF
ON
t
F
t
R
1
0
10
20
(
30
40
0
5
10
15
20
25
30
35
R
)
Ω
R
(
)
Ω
G
G
Fig. 14 - Typ. Switching Time vs. RG
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 13A; VGE = 15V
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 13A; VGE = 15V
Diode clamp used: 8ETH06 (See C.T.3)
Diode clamp used: 8ETH06 (See C.T.3)
12
10
8
10000
Cies
1000
6
Coes
100
4
2
Cres
0
10
0
100 200 300 400 500 600 700
(V)
0
20
40
60
(V)
80
100
V
CE
V
CE
Fig. 16- Typ. Capacitance vs. VCE
Fig. 15- Typ. Output Capacitance
VGE= 0V; f = 1MHz
Stored Energy vs. VCE
1.6
1.5
1.4
1.3
1.2
1.1
1
16
14
12
10
8
400V
6
0.9
0.8
0.7
0.6
4
2
0
-50
0
50
100
150
200
0
10 20 30 40 50 60 70 80
T , Junction Temperature (°C)
Q
, Total Gate Charge (nC)
J
G
Fig. 18 - Normalized Typical VCE(on) vs.
Junction Temperature
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 13A
ICE = 13A; VGE = 15V
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5
IRGB20B60PD1
14
12
10
8
50
45
40
35
30
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
I
F
I
I
= 8.0A
= 4.0A
F
F
6
4
25
2
VR = 200V
TJ = 125°C
TJ = 25°C
20
0
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 20 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Reverse Recovery vs. dif/dt
200
1000
VR= 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 21 - Typical Stored Charge vs. dif/dt
Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
6
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IRGB20B60PD1
1
D = 0.50
0.20
0.10
0.1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
R1
τ
0.0076
0.2696
0.1568
0.1462
0.000001
0.000270
0.001386
0.015586
τ
J τJ
τ
Cτ
0.05
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.02
0.01
0.1
τ
J τJ
τ
τ
Cτ
1.779
0.000226
1 τ1
Ci= τi/Ri
τ
2τ2
3.223
0.001883
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGB20B60PD1
L
L
VCC
80 V
DUT
DUT
0
480V
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
V
CC
R =
L
I
CM
PFC diode
DUT /
DRIVER
VCC
DUT
VCC
Rg
Rg
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.3 - Switching Loss Circuit
REVERSE RECOVERY CIRCUIT
V
= 200V
R
Ω
0.01
L = 70µH
D.U.T.
D
dif/dt
ADJUST
IRFP250
G
S
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
8
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IRGB20B60PD1
450
400
350
300
250
200
150
100
50
18
16
14
12
10
8
450
400
350
300
250
200
150
100
50
45
40
TEST CURRENT
35
tf
30
25
tr
90% ICE
90% test current
20
5% VCE
5% ICE
10% test current
15
6
4
10
5% VCE
5
2
0
0
0
0
Eon Loss
Eoff Loss
-50
-5
-50
-2
7.75
7.85
7.95
Time (µs)
8.05
8.15
-0.20 0.00 0.20 0.40 0.60 0.80
Time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 125°C using Fig. CT.3
@ TJ = 125°C using Fig. CT.3
3
t
rr
I
F
t
t
a
b
0
4
Q
rr
2
I
0.5
I
RRM
RRM
5
di(rec)M/dt
0.75
I
RRM
1
di /dt
f
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
and IRRM
trr X IRRM
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. WF3 - Reverse Recovery Waveform and
Definitions
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9
IRGB20B60PD1
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1 - GATE
1
2
3
2 -COLLECTOR
3 EMITTER
4 - COLLECTOR
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/03
10
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