AN-9732 [FAIRCHILD]
LED Application Design Guide Using BCM Power Factor Correction (PFC) Controller for 200W Lighting System; LED应用设计指南使用BCM功率因数校正( PFC)控制器200W照明系统![AN-9732](http://pdffile.icpdf.com/pdf1/p00194/img/icpdf/AN-973_1096955_icpdf.jpg)
型号: | AN-9732 |
厂家: | ![]() |
描述: | LED Application Design Guide Using BCM Power Factor Correction (PFC) Controller for 200W Lighting System |
文件: | 总22页 (文件大小:2690K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
www.fairchildsemi.com
AN-9732
LED Application Design Guide Using BCM Power Factor
Correction (PFC) Controller for 200W Lighting System
1. Introduction
This application note presents practical step-by-step design
considerations for a Boundary-Conduction-Mode (BCM)
Power-Factor-Correction (PFC) converter employing
Fairchild PFC controller, FL7930. It includes designing the
inductor and Zero-Current-Detection (ZCD) circuit,
selecting the components, and closing the control loop. The
design procedure is verified through an experimental 200W
prototype converter.
for another power stage controller after PFC stage or be
transferred to the secondary side to synchronize the
operation with PFC voltage condition. This simplifies the
external circuit around the PFC controller and saves total
BOM cost. The internal proprietary logic for detecting input
voltage greatly improves the stability of PFC operation.
Together with the maximum switching frequency clamping
at 300KHz. FL7930 can limit inductor current within pre-
designed value at one or two cycles of the AC-input-absent
test to simulate a sudden blackout. Due to the startup-
without-overshoot design, audible noise from repetitive
OVP triggering is eliminated. Protection functions include
output over-voltage, over-current, open-feedback, and
under-voltage lockout.
Unlike the Continuous Conduction Mode (CCM) technique
often used at this power level, BCM offers inherent zero-
current switching of the boost diodes (no reverse-recovery
losses), which permits the use of less expensive diodes
without sacrificing efficiency.
The FL3930B provides an additional OVP pin that can be
used to shut down the boost power stage when output
voltage exceeds OVP level due to damaged resistors
connected at the INV pin. The FL7930C provides a PFC-
ready pin can be used to trigger other power stages when
PFC output voltage reaches the proper level (with
hysteresis). This signal can be used as the VCC trigger signal
An Excel®-based design tool is available with this
application note and the design result is shown with the
calculation results as an example.
Figure 1. Typical Application Circuit
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
AN-9732
APPLICATION NOTE
2. Operation Principle of BCM Boost PFC Converter
The most widely used operation modes for the boost
converter are Continuous Conduction Mode (CCM) and
Boundary Conduction Mode (BCM). These two descriptive
names refer to the current flowing through the energy
storage inductor of the boost converter, as depicted in
Figure 2. As the names indicate, the inductor current in
CCM is continuous; while in BCM, the new switching
period is initiated when the inductor current returns to zero,
which is at the boundary of continuous conduction and
discontinuous conduction operations. Even though the BCM
operation has higher RMS current in the inductor and
switching devices, it allows better switching condition for
the MOSFET and the diode. As shown in Figure 2, the
diode reverse recovery is eliminated and a fast-recovery
diode is not needed. The MOSFET is also turned on with
zero current, which reduces the switching loss.
A by-product of BCM is that the boost converter runs with
variable switching frequency that depends primarily on the
selected output voltage, the instantaneous value of the input
voltage, the boost inductor value, and the output power
delivered to the load. The operating frequency changes as
the input current follows the sinusoidal input voltage
waveform, as shown in Figure 3. The lowest frequency
occurs at the peak of sinusoidal line voltage.
Figure 3. Operation Waveforms of BCM PFC
The voltage-second balance equation for the inductor is:
(1)
VIN (t )tON
VOUT VIN (t ) tOFF
where VIN(t) is the rectified line voltage and VOUT is the
output voltage.
The switching frequency of BCM boost PFC converter is:
VOUT VIN (t )
1
1
fSW
tON tOFF tON
VOUT
(2)
VOUT VIN,PK sin
2 fLINE t
1
Figure 2. CCM vs. BCM Control
tON
VOUT
The fundamental idea of BCM PFC is that the inductor
current starts from zero in each switching period, as shown
in Figure 3. When the power transistor of the boost
converter is turned on for a fixed time, the peak inductor
current is proportional to the input voltage. Since the current
waveform is triangular; the average value in each switching
period is proportional to the input voltage. In a sinusoidal
input voltage, the input current of the converter follows the
input voltage waveform with very high accuracy and draws
a sinusoidal input current from the source. This behavior
makes the boost converter in BCM operation an ideal
candidate for power factor correction.
where VIN,PK is the amplitude of the line voltage and fLINE is
the line frequency.
Figure 4 shows how the MOSFET on time and switching
frequency changes as output power decreases. When the
load decreases, as shown in the right side of Figure 4, the
peak inductor current diminishes with reduced MOSFET on
time and, therefore, the switching frequency increases.
Since this can cause severe switching losses at light-load
condition and too-high switching frequency operation may
occur at startup, the maximum switching frequency of
FL7930 is limited to 300KHz.
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
2
AN-9732
APPLICATION NOTE
3. Startup without Overshoot and
AC-Absent Detection
Because feedback control speed of the PFC is typically quite
slow, there is a gap between output voltage and feedback
control. Therefore, Over-Voltage Protection (OVP) is
critical at the PFC controller. Voltage dip caused by fast
load change from light to heavy is diminished by a large
bulk capacitor. OVP is easily triggered at startup. Switching
starting and stopping by OVP at startup may cause audible
noise and can increase voltage stress at startup, which may
be higher than normal operation. This is improved if soft-
start time is very long, but too-long start time raises the time
needed for the output voltage to reach the rated value at
light load. FL7930 includes a startup without overshoot
feature. During startup, the feedback loop is controlled by
an internal proportional gain controller and, when the output
voltage reaches the vicinity of the rated value, changed to
the external compensator after an internally fixed transition
time described in the Figure 6. In short, an internal
proportional gain controller prevents overshoot at startup;
external conventional compensator takes over after startup.
Figure 4. Frequency Variation of BCM PFC
Since the design of the filter and inductor for a BCM PFC
converter with variable switching frequency should be at
minimum frequency condition, it is worthwhile to examine
how the minimum frequency of BCM PFC converter
changes with operating conditions.
Figure 5 shows the minimum switching frequency, which
occurs at the peak of line voltage as a function of the RMS
line voltage for three output voltage settings. It is interesting
that, depending on where the output voltage is set, the
minimum switching frequency may occur at the minimum
or at the maximum line voltage. When the output voltage is
approximately 405V, the minimum switching frequency is
the same for both low line (85VAC) and high line (265VAC).
Figure 6. Startup Without Overshoot
FL7930 eliminates AC input voltage detection to save the
power loss caused by an input-voltage-sensing resistor array
and to optimize THD. Therefore, no information about input
voltage is available at the internal controller. In many cases,
the VCC of PFC controller is supplied by an independent
power source, like standby power, so when the electric
power is suddenly interrupted during one or two AC line
periods, VCC is still alive during that time and PFC output
voltage drops. Accordingly, the control loop tries to
compensate output voltage drop and control voltage reaches
its maximum. When AC line input voltage is live, control
voltage allows high switching current and creates stress on
the MOSFET and diode. To protect against this, FL7930
checks if the input AC voltage exists. Once controller
verifies that the input voltage does not exist, soft-start is
reset and waits until AC input voltage is applied again. Soft-
start manages the turn-on time for smooth operation after
detecting that the AC voltage is live and results in less
voltage and current stress during startup.
Figure 5. Minimum Switching Frequency vs. RMS Line
Voltage (L = 200µH, POUT = 200W)
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
3
AN-9732
APPLICATION NOTE
Figure 8. AC-Off Operation with AC-Absent
Detection Circuit
Figure 7. AC-Off Operation without AC-Absent
Detection Circuit
4. Design Considerations
In this section, a design procedure is presented using the
schematic in Figure 9 as a reference. A 200W PFC
application with universal input range is selected as a design
example. The design specifications are:
. Hold-up Time Requirement: Output Voltage Should Not
Drop Below 330V During One Line Cycle
. Output Voltage Ripple: Less than 8VPP
. Minimum Switching Frequency: Higher than 50kHz
. Control Bandwidth: 5~15Hz
. Line Voltage Range: 90~265VAC (Universal Input), 50Hz
. Nominal Output Voltage and Current: 400V/0.5A (200W)
. VCC supplied from auxiliary power supply.
Figure 9. Reference Circuit for Design Example of BCM Boost PFC
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
4
AN-9732
APPLICATION NOTE
[STEP-1] Define System Specifications
.
.
.
.
.
.
Line Frequency Range (VLINE,MIN and VLINE,MAX
Line Frequency (fLINE
Output-Voltage (VOUT
Output Load Current (IOUT
)
)
)
)
Output Power (POUT =VOUT IOUT
)
Estimated Efficiency ()
To calculate the maximum input power, it is necessary to
estimate the power conversion efficiency. At universal input
range, efficiency is recommended at 0.9; 0.93~0.95 is
recommended when input voltage is high.
When input voltage is set at the minimum, input current
becomes the maximum to deliver the same power compared
at high line. Maximum boost inductor current can be
detected at the minimum line voltage and at its peak.
Inductor current can be divided into two categories; one is
rising current when MOSFET is on and the other is output
diode current when MOSFET is off, as shown in Figure 10.
Figure 10. Inductor and Input Current
Because switching frequency is much higher than line
frequency, input current can be assumed to be constant
during a switching period, as shown in Figure 11.
[STEP-2] Boost Inductor Design
The boost inductor value is determined by the output power
and the minimum switching frequency. The minimum
switching frequency must be higher than the maximum
audible frequency band of 20kHz. Minimum frequency near
20kHz can decrease switching loss with the cost of
increased inductor size and line filter size. Too-high
minimum frequency may increase the switching loss and
make the system respond to noise. Selecting in the range of
about 30~60kHz is a common choice; 40~50kHz is
recommended with FL7930.
The minimum switching frequency may appear at minimum
input voltage or maximum input voltage, depending on the
output voltage level. When PFC output voltage is less than
405V, minimum switching appears at the maximum input
voltage, according to application note AN-6086. Inductance
is obtained using the minimum switching frequency:
Figure 11. Inductor and Input Current
With the estimated efficiency, Figure 10 and Figure 11
inductor current peak (IL,PK), maximum input current
(IIN,MAX), and input Root Mean Square (RMS) current
(IIN,MAXRMS) are given as:
2
4 POUT
2VLINE
IL,PK
[ A ]
L
[ H ]
(3)
2 VLINE ,MIN
2VLINE
2VLINE
(6)
4 fSW ,MIN POUT 1
VOUT
IIN,MAX IL,PK / 2 [ A]
IIN,MAXRMS IIN,MAX
(4)
(5)
where L is boost inductance and fSW,MIN is the minimum
switching frequency.
/
2 [ A]
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
5
AN-9732
APPLICATION NOTE
The maximum on time needed to carry peak inductor
current is calculated as:
I
L,PK
t
L
[s]
ON,MAX
(7)
2 V
LINE,MIN
Once inductance and the maximum inductor current are
calculated, the number of turns of the boost inductor should
be determined considering the core saturation. The
minimum number of turns is given as:
Figure 13. A and AW
e
IL,PK L[ H ]
Ae [ mm2 ] B
NBOOST
[Turns ]
(8)
where Ae is the cross-sectional area of core and B is the
maximum flux swing of the core in Tesla. B should be set
below the saturation flux density.
Figure 12 shows the typical B-H characteristics of ferrite
core from TDK (PC45). Since the saturation flux density
(B) decreases as the temperature increases, the high
temperature characteristics should be considered.
RMS inductor current (IL,RMS) and current density of the coil
(IL,DENSITY) can be given as:
IL,PK
IL,RMS
[ A]
IL,RMS
(9)
6
IL,DENSITY
[ A / mm2 ]
d
2
(10)
wire
Nwire
2
where dWIRE is the diameter of winding wire and NWIRE is
the number of strands of winding wire.
When selecting wire diameter and strands; current density,
window area (AW, refer to Figure 13) of selected core, and
fill factor need to be considered. Winding sequence of the
boost inductor is relatively simple compared to a DC-DC
converter, so fill factor can be assumed about 0.2~0.3.
Layers cause the skin effect and proximity effect in the coil,
so real current density may be higher than expected.
Figure 12. Typical B-H Curves of Ferrite Core
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
6
AN-9732
APPLICATION NOTE
Auxiliary winding must give enough energy to trigger ZCD
threshold to detect zero current. Minimum auxiliary winding
turns are given as:
[STEP-3] Inductor Auxiliary Winding Design
Figure 14 shows the application circuit of nearby ZCD pin
from auxiliary winding.
1.5V NBOOST
NAUX
[Turns]
(11)
VOUT 2VLINE,MAX
where 1.5V is the positive threshold of the ZCD pin.
To guarantee stable operation, auxiliary winding turns are
recommended to add 2~3 turns to the calculation result of
Equation (11). However, too many auxiliary winding turns
raise the negative clamping loss at high line and positive
clamping loss at low line.
Figure 14. Application Circuit of ZCD Pin
The first role of ZCD winding is detecting the zero-current
point of the boost inductor. Once the boost inductor current
becomes zero, the effective capacitor shown at the
MOSFET drain pin (Ceff) and the boost inductor resonate
together. To minimize the constant turn-on time
deterioration and turn-on loss, the gate is turned on again
when the drain source voltage of the MOSFET (VDS)
reaches the valley point shown in Figure 15. When input
voltage is lower than half of the boosted output voltage,
Zero Voltage Switching (ZVS) is possible if MOSFET turn-
on is triggered at valley point.
[STEP-4] ZCD Circuit Design
If a transition time when VAUXILIARY drops from 1.4V to 0V
is ignored from Figure 15, the needed additional delay by
the external resistor and capacitor is one quarter of the
resonant period. The time constant made by ZCD resistor
and capacitor should be the same as one quarter of the
resonant period:
2 Ceff L
(12)
RZCD CZCD
4
where Ceff is the effective capacitor shown at the MOSFET
drain pin; CZCD is the external capacitance at the ZCD pin;
and RZCD is the external resistance at the ZCD pin.
The second role of RZCD is the current limit of the internal
negative clamp circuit when auxiliary voltage drops to
negative due to MOSFET turn on. ZCD voltage is clamped
0.65V and minimum RZCD can be given as:
NAUX
2VLINE,MAX 0.65V
(13)
NBOOST
RZCD
[ ]
3mA
where 3mA is the clamping capability of the ZCD pin.
The calculation result of Equation (13) is normally higher
than 15k. If 20k is assumed as RZCD, calculated CZCD
from Equation (12) is around 10pF when the other
components are assumed as conventional values used in the
www.fairchildsemi.com
Figure 15. ZCD Detection Waveforms
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
7
AN-9732
APPLICATION NOTE
field. Because most IC pins have several pF parasitic
capacitance, CZCD can be eliminated when RZCD is higher
than 30k. However, a small capacitor would be helpful
when auxiliary winding suffers from operating noise.
The PFC control loop has two conflicting goals: output
voltage regulation and making the input current shape the
same as input voltage. If the control loop reacts to regulate
output voltage smoothly, as shown in Figure 16, control
voltage varies widely with the input voltage variation. Input
current acts to the control loop and sinusoidal input current
shape cannot be attained. This is the reason control response
of most PFC topologies is very slow and turn-on time over
AC period is kept constant. This is also the reason output
voltage ripple is made by input and output power
relationship, not by control-loop performance.
VIN & VOUT
Figure 17. Inductor Current at AC Voltage Peak
VCONTROL
IACIN
t
Figure 16. Input Current Deterioration by Fast Control
If on-time is controlled constantly over one AC period,
inductor current peak follows AC input voltage shape and
achieves good power factor. Off-time is basically inductor
current reset time due to the boundary mode and is
determined by the input and output voltage difference.
When input voltage is at its peak, the voltage difference
between input and output voltage is small, and long turn-off
time is necessary. When input voltage is near zero, turn-off
time is short, as shown in Figure 17 and Figure 18. Though
inductor current drops to zero, there is a minor delay,
explained above. The delay can be assumed as fixed when
AC is at line peak and zero. Near AC line peak, the inductor
current decreasing slope is slow and inductor current slope
is also slow during the ZCD delay. The amount of negative
current is not much higher than the inductor current peak.
Near the AC line zero, inductor current decreasing slope is
very high and the amount of negative current is higher than
positive inductor current peak because input voltage is
almost zero.
Figure 18. Inductor Current at AC Voltage Zero
Negative inductor current creates zero current distortion and
degrades the power factor. Improve this by extending turn-
on time at the AC line input near the zero cross.
Negative auxiliary winding voltage, when MOSFET is
turned on, is linearly proportional to the input voltage.
Sourcing current generated by the internal negative
clamping circuit is also proportional to sinusoidal input
voltage. That current is detected internally and added to the
internal sawtooth generator, as shown in Figure 19.
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
8
AN-9732
APPLICATION NOTE
With the aid of IZCD, an internal sawtooth generator slope is
changed and turn-on time varies as shown in Figure 22.
Figure 19. ZCD Current and Sawtooth Generator
When AC input voltage is almost zero, no negative current
is generated from inside, but sourcing current when input
voltage is high is used to raise the sawtooth generator slope
and turn-on time is shorter. As a result, turn-on time when
AC voltage is zero is longer compared to AC voltage, in
peaks shown in Figure 20.
Figure 22. Internal Sawtooth Wave Slope Variation
RZCD also influences control range. Because FL7930 doesn’t
detect input voltage, voltage-mode control value is
determined by the turn-on time to deliver needed current to
boost output voltage. When input voltage increases, control
voltage decreases rapidly. For example, if input voltage
doubles, control voltage drops to one quarter. Making
control voltage maximum when input voltage is low and at
full load is necessary to use the whole control range for the
rest of the input voltage conditions. Matching maximum
turn-on time needed at low line is calculated in Equation (7)
and turn-on time adjustment by RZCD guarantees use of the
full control range. RZCD for control range optimization is
obtained as:
Figure 20. THD Improvement
The current that comes from the ZCD pin, when auxiliary
voltage is negative, depends on RZCD. The second role of
RZCD is also related with the improving the Total Harmonic
Distortion (THD).
2 VLINE,MIN NAUX
0.469mA NBOOST
28s
tON,MAX1 tON,MAX
RZCD
[ ]
(14)
The third role of RZCD is making the maximum turn-on time
adjustment. Depending on sourcing current from the ZCD
pin, the maximum on-time varies as in Figure 21.
where:
ON,MAX is calculated by Equation (7);
t
tON,MAX1 is maximum on-time programming 1;
NBOOST is the winding turns of boost inductor; and
NAUX is the auxiliary winding turns.
RZCD calculated by Equation (13) is normally lower than the
value calculated in Equation (14). To guarantee the needed
turn on-time for the boost inductor to deliver rated power,
the RZCD from Equation (13) is normally not suitable. RZCD
should be higher than the result of Equation (14) when
output voltage drops as a result of low line voltage.
Figure 21. Maximum On-Time Variation vs. IZCD
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
9
AN-9732
APPLICATION NOTE
When input voltage is high and load is light, not much input
current is needed and control voltage of VCOMP touches
switching stop level, such as if FL7930 is 1V. However, in
some applications, a PFC block is needed to operate
normally at light load. To compensate control range
correctly, input voltage sensing is necessary, such as with
Fairchild’s interleaved PFC controller FAN9612, or special
care on sawtooth generator is necessary. Without it,
optimizing RZCD is only slightly helpful for control range.
This is explained and depicted in the associated Excel®
design tool “COMP Range” worksheet. To guarantee
enough control range at high line, clamping output voltage
lower than rated on the minimum input condition can help.
much ripple on the output voltage may cause premature
OVP during normal operation, the peak-to-peak ripple
specification should be smaller than 15% of the nominal
output voltage.
The hold-up time should also be considered when
determining the output capacitor as:
2POUT tHOLD
COUT
[f ]
2
(16)
VOUT 0.5VOUT,RIPPLE
2 VOUT,MIN
where tHOLD is the required hold-up time and VOUT,MIN is the
minimum output voltage during hold-up time.
I
diode
I
diode,ave
I
=IOUT(1-cos(4p.fL.t))
diode,ave
I
OUT
I
OUT
V
=
OUT,ripple
2p.fL.COUT
V
OUT
t
Figure 23. Output Voltage Ripple
The voltage rating of capacitor can be obtained as:
VOV
P,MAX
VST,COUT
VOUT [V ]
(17)
VREF
[STEP-5] Output Capacitor Selection
where VOVP,MAX and VREF are the maximum tolerance
specifications of over-voltage protection triggering voltage
and reference voltage at error amplifier.
The output voltage ripple should be considered when
selecting the output capacitor. Figure 23 shows the line
frequency ripple on the output voltage. With a given
specification of output ripple, the condition for the output
capacitor is obtained as:
IOUT
COUT
[F ]
(15)
2 fLINE VOUT,RIPPLE
where VOUT,RIPPLE is the peak-to-peak output voltage ripple
specification.
The output voltage ripple caused by ESR of electrolytic
capacitor is not as serious as other power converters because
output voltage is high and load current is small. Since too
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
10
AN-9732
APPLICATION NOTE
output diode turns on; a minor voltage peak can be shown at
drain pin, which is proportional to MOSFET turn-off speed.
MOSFET loss can be divided into three parts: conduction
loss, turn-off loss, and discharge loss. Boundary mode
guarantees Zero Current switching (ZCS) of MOSFET
when turned on, so turn-on loss is negligible.
The MOSFET RMS current and conduction loss are
obtained as:
4 2 V
LINE [A]
9 VOUT
1
6
(19)
IQ,RMS IL,PK
P
IQ,RMS
2 RDS,ON [W]
(20)
Q,CON
where IQ,RMS is the RMS value of MOSFET current,
PQ,CON is the conduction loss caused by MOSFET current,
and RDS,ON is the ON resistance of the MOSFET.
ON resistance is described as “static ON resistance” and
varies depending on junction temperature. That variation
information is normally supplied as a graph in the datasheet
and may vary by manufacturer. When calculating
conduction loss, generally multiply three with the RDS,ON for
more accurate estimation.
The precise turn-off loss calculation is difficult because of
the nonlinear characteristics of MOSFET turn off. When
piecewise linear current and voltage of MOSFET during
turn-off and inductive load are assumed, MOSFET turn-off
loss is obtained as:
1
PQ,SWOFF
VOUT IL tOFF fSW [W]
(21)
2
where tOFF is the turn-off time and fSW is the switching
frequency.
[STEP-6] MOSFET and DIODE Selection
Boundary mode PFC inductor current and switching
frequency vary at every switching moment. RMS inductor
current and average switching frequency over one AC
period can be used instead of instantaneous values.
Selecting the MOSFET and diode needs extensive
knowledge and calculation regarding loss mechanisms and
gets more complicated if proper selection of a heatsink is
added. Sometimes the loss calculation itself is based on
assumptions that may be far from reality. Refer to industry
resources regarding these topics. This note shows the
voltage rating and switching loss calculations based on the
linear approximation.
Individual loss portions are changed according to the input
voltage; maximum conduction loss appears at low line
because of high input current; and maximum switching off
loss appears at high line because of the high switching
frequency. Thus, resulting loss is always lower than the
summation of the two losses calculated above.
The voltage stress of the MOSFET is obtained as:
VOV
P,MAX
Capacitive discharge loss made by effective capacitance
VST,Q
VOUT VDROP,DOUT [V ]
(18)
VREF
shown at drain and source, which includes MOSFET COSS
,
an externally added capacitor to reduce dv/dt and parasitic
capacitors shown at drain pin, is also dissipated at
MOSFET. That loss is calculated as:
where VDROP,DOUT is the maximum forward-voltage drop of
output diode.
After the MOSFET is turned off, the output diode turns on
and a large output electrolytic capacitor is shown at the
drain pin, thus a drain voltage clamping circuit that is
necessary on other topologies is not necessary in PFC.
During the turn-off transient, boost inductor current changes
the path from MOSFET to output diode and before the
1
PQ,DISCHG
COSS CEXT CPAR
V2 fSW [W]
OUT
(22)
2
where:
COSS is the output capacitance of MOSFET;
CEXT is an externally added capacitor at drain and source of
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
11
AN-9732
APPLICATION NOTE
[STEP-8] Determine Current-Sense Resistor
It is typical to set pulse-by-pulse current limit level a little
higher than the maximum inductor current calculated by
Equation (3). For 10% margin, the current-sensing resistor is
selected as:
VCS,LIM
RCS
[]
(26)
IL,PK 1.1
Once resistance is calculated, its power loss at low line is
calculated as:
PRCS IQ2,RMSRCS [W]
(27)
Power rating of the sensing resistor is recommended a twice
the power rating calculated in Equation (27).
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
12
AN-9732
APPLICATION NOTE
increase as input voltage increases, and DC gain increases
as load decreases, high input voltage and light load is the
worst condition for feedback loop design.
[STEP-9] Design Compensation Network
The boost PFC power stage can be modeled as shown in
Figure 24. MOSFET and diode can be changed to loss-free
resistor model and then be modeled as a voltage-controlled
current source supplying RC network.
Figure 25. Control-to-Output Transfer Function for
Different Input Voltages
Figure 24. Small Signal Modeling of the Power Stage
Figure 26. Control-to-Output Transfer Function for
Different Loads
By averaging the diode current during the half line cycle,
the low-frequency behavior of the voltage controlled current
source of Figure 24 is obtained as:
Proportional and integration (PI) control with high-
frequency pole is typically used for compensation, as shown
in Figure 27. The compensation zero (fCZ) introduces phase
boost, while the high-frequency compensation pole (fCP)
attenuates the switching ripple.
2V
LINE
4VOUT
2VLINE
L
IDOUT,AVE KSAW
[ A]
(28)
where:
The transfer function of the compensation network is
obtained as:
L is the boost inductance,
VOUT is the output voltage; and
SAW is the internal gain of sawtooth generator
(that of FL7930 is 8.49610-6).
K
s
1
2 fI
s
2 fCZ
s
vCOMP
vOUT
Then the low-frequency, small-signal, control-to-output
transfer function is obtained as:
1
2 fCP
2.5
115mho
CCOMP, LF CCOMP, HF
fI
fCZ
fCP
V
LINE2 RL
vOUT
vCOMP
1
VOUT 2
KSAW
(30)
(29)
s
4VOUT L
1
1
where
2 fp
2 RCOMP CCOMP, LF
2
where
and RL is the output load resistance
fp
1
2 RLCOUT
CCOMP, LF CCOMP, HF
in a given load condition.
2 RCOMP
CCOMP, LF CCOMP, HF
Figure 25 and Figure 26 show the variation of the control-
to-output transfer function for different input voltages and
different loads. Since DC gain and crossover frequency
If CCOMP,LF is much larger than CCOMP,HF, fI and fCP can be
simplified as:
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
13
AN-9732
APPLICATION NOTE
The procedure to design the feedback loop is:
2.5
115mho
fI
[Hz]
VOUT 2 CCOMP, LF
a. Determine the crossover frequency (fC) around
1/10~1/5 of line frequency. Since the control-to-
output transfer function of the power stage has
-20dB/dec slope and -90o phase at the crossover
frequency, as shown in Figure 28; it is required to
place the zero of the compensation network (fCZ)
around the crossover frequency so 45 phase
margin is obtained. The capacitor CCOMP,LF is
determined as:
(31)
1
fCP
[Hz]
2 RCOMP CCOMP, HF
G
115mho
M
KSAW
2VOUT2 LCOUT
VLINE
22.5115mho
CCOMP, LF
[f ]
(34)
2
2fC
To place the compensation zero at the crossover
frequency, the compensation resistor is obtained as:
1
RCOMP
[ ]
(35)
2 fC CCOMP,LF
b. Place this compensator high-frequency pole (fCP) at
least a decade higher than fC to ensure that it does
not interfere with the phase margin of the voltage
regulation loop at its crossover frequency. It should
also be sufficiently lower than the switching
frequency of the converter for noise to be
effectively attenuated. The capacitor CCOMP,HF is
determined as:
1
CCOMP,HF
[ ]
(36)
2 fCP RCOMP
Figure 27. Compensation Network
The feedback resistor is chosen to scale down the output
voltage to meet the internal reference voltage:
RFB1
VOUT 2.5V
(32)
RFB1 RFB2
Typically, high RFB1 is used to reduce power consumption
and, at the same time, CFB can be added to raise the noise
immunity. The maximum CFB currently used is several nano
farads. Adding a capacitor at the feedback loop introduces a
pole as:
1
fFP
2
RFB1 // RFB2
CFB
Figure 28. Compensation Network Design
(33)
1
[Hz]
2 RFB2 CFB
R
R
FB2
R
FB2
FB1
where
R
//RFB2
FB1
R
FB1
Though RFB1 is high, pole frequency made by the
synthesized total resistance and several nano farads is
several kilo hertz and rarely affects control-loop response.
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
14
AN-9732
APPLICATION NOTE
[STEP-10] Line Filter Capacitor Selection
It is typical to use small bypass capacitors across the bridge
rectifier output stage to filter the switching current ripple, as
shown in Figure 29. Since the impedance of the line filter
inductor at line frequency is negligible compared to the
impedance of the capacitors, the line frequency behavior of
the line filter stage can be modeled, as shown in Figure 29.
Even though the bypass capacitors absorb switching ripple
current, they also generate circulating capacitor current,
which leads the line voltage by 90o, as shown in Figure 30.
The circulating current through the capacitor is added to the
load current and generates displacement between line
voltage and current.
The displacement angle is given by:
VLINE
2 2 fLINE CEQ
tan1
(37)
P
OUT
where CEQ is the equivalent capacitance that appears across
the AC line (CEQ=CF1+CF2+CHF).
The resultant displacement factor is:
DF cos
(38)
Since the displacement factor is related to power factor, the
capacitors in the line filter stage should be selected
carefully. With a given minimum displacement factor
(DFMIN) at full-load condition, the allowable effective input
capacitance is obtained as:
POUT
CEA
tan
cos1
DFMN
[F]
(39)
VLINE
2 2 fLINE
One way to determine if the input capacitor is too high or
PFC control routine has problems is to check Power Factor
(PF) and Total Harmonic Distortion (THD). PF is the degree
to which input energy is effectively transferred to the load
by the multiplication of displacement factor and THD that is
input current shape deterioration ratio. PFC control loop
rarely has no relation to displacement factor and input
capacitor rarely has no impact on the input current shape. If
PF is low (high is preferable), but THD is quite good (low is
preferable), it can be concluded that input capacitance is too
high and PFC controller is fine.
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
15
AN-9732
APPLICATION NOTE
Figure 29. Equivalent Circuit of Line Filter Stage
Figure 30. Line Current Displacement
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
16
AN-9732
APPLICATION NOTE
Appendix 1: Use of the RDY Pin for FL7930C
Typically, boosted output voltage from the PFC block is
used as input voltage to the DC-DC conversion block. For
some types of DC-DC converter, it is recommended to
trigger operation after the input voltage raised to some level.
For example, LLC resonant converter or forward
converter’s input voltage is limited to some range to
enhance performance or guarantee the stable operation.
A fast diode, such as 1N4148, is needed to prohibit the
emitter-base breakdown. Without that diode, when RDY
voltage drops to VRDY,SAT after being pulled up, emitter
voltage maintains operating voltage for LLC controller and
almost all the voltage is applied to the emitter and base.
Breakdown current flows from emitter, base, and drain of
the MOSFET to the source of MOSFET. Because a large
electrolytic capacitor is typically used at the VCC supply,
that breakdown current flows high for a long time. In this
case, the internal MOSFET may be damaged since the
external small-signal bipolar junction transistor current
capability is higher than the internal RDY MOSFET.
The FL7930C provides a PFC-ready pin that can be used to
trigger other power stage when PFC output voltage reaches
the proper level.
For that purpose, the PFC RDY pin is assigned and can be
used as a acknowledge signal for the DC-DC conversion
stages. When PFC output voltage rises higher than the
internal threshold, PFC RDY output is pulled HIGH by the
external pull-up voltage and drops to zero with hysteresis.
Once circuit configuration is settled, voltage after
subtracting forward-voltage drop of the diode and voltage
drop (by the multiplication of base current and RPULLUP
)
from the VCC of FL7930C is available for the LLC
controller’s VCC source.
2.240V
VOUT,RDYH
VOUT [V]
VOUT [V]
2.500V
1.640V
2.500V
Another example is using RDY when the secondary side
needs PFC voltage information. When a Cold Cathode
Fluorescent Lamp (CCFL) is used for the backlight source
of an LCD TV, the inverter stage to ignite CCFL can
receive PFC output voltage directly. For that application,
Figure 32 can be a suitable circuit configuration.
(40)
VOUT,RDYL
where VOUT,RDYH is the VOUT voltage to trigger PFC RDY
output to pull HIGH and VOUT,RDYL is the VOUT voltage to
trigger PFC ready output to drop to zero.
If rated VOUT is 400VDC, then VOUT,RDYH is 358VDC, and
V
OUT,RDYL is 262VDC.
When LLC resonant converter is assumed to connect at the
PFC output, the RDY pin can control the VCC for the LLC
controller, as shown in Figure 31.
Figure 32. RDY Application Circuit Using Opto-Coupler
With this application circuit, the minimum RPULLUP is given
by Equation (42) and the maximum RPULLUP is limited by
sufficient current to guarantee stable operation of the opto-
coupler. Assuming 1mA is the typical quantity to drive
opto-coupler, the maximum RPULLUP is:
VPULLUP VOPTO,F
Figure 31. RDY Application Circuit for VCC Driving
RPULLUP
[ ]
(42)
1mA
RPULLUP is chosen based on the current capability of internal
open-drain MOSFET and can be obtained as:
where VOPTO,R is the input forward-voltage drop of the opto-
coupler.
VPULLUPVRDY,SAT
RPULLUP
[]
(41)
It may possible that a secondary microcontroller has
authority to give a trigger signal to the CCFL inverter
controller; however, after combining the microcontroller
signal and RDY signal from the primary-side, the inverter
stage is triggered only when the two signals meet the
requirements at the same time.
IRDY,SK
where VPULLUP is the pull-up voltage, VRDY,SAT is the
saturation voltage of the internal MOSFET, and IRDY,SK is
the allowable sink current for the internal MOSFET.
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
17
AN-9732
APPLICATION NOTE
Appendix 2: Gate Driver Design
FL7930 directly drives the gate of the MOSFET and various
combinations of gate driver circuits are possible. Figure 33
and Figure 31 show the three circuits that are widely used.
The most difficult and uncertain task in direct gate drive is
optimizing circuit layout. Gate driving path from the OUT
pin, resistor, MOSFET gate, and MOSFET source to the
GND pin should be as short as possible to reduce parasitic
inductance; which may make MOSFET on/off speed slow
or introduce unwanted gate oscillation. Using a wider PCB
pattern for this lane reduces parasitic inductance. To damp
unwanted gate oscillation made by the capacitance at the
gate pin and parasitic inductance formed by MOSFET
internal bonding wire and PCB pattern, proper resistance
can match the impedance at the resonant frequency. To meet
EMI regulations or for the redundant system, fast gate speed
can be sacrificed by increasing serial resistance between the
gate driver and gate.
When only one resistor is used, the turn-on and turn-off
paths follow the same routine and turn-on and turn-off speed
cannot be changed simultaneously. To cover this, make
different paths by two resistors and diode if possible. Turn-
off current flows through the diode first, instead of RON, and
then RON and ROFF show together. Accordingly, faster turn
off is possible. However, turn-off path using internal gate
driver’s sinking path and current is limited by sinking
current capability. If a PNP transistor is added between the
gate and source of the MOSFET, the gate is shorted to
source locally without sharing the current path to the gate
driver. This makes the gate discharge to the much smaller
path than that made by the controller. The possibility of
ground bounce is reduced and power dissipation in the gate
driver is reduced. Due to new high-speed MOSFET types
such as SupreMOS® or SuperFET™, gate speed is getting
fast. This decreases the switching loss of the MOSFET. At
the same time, power systems suffer from the EMI
deterioration or noise problems, like gate oscillation.
Therefore, sometimes a gate discharge circuit is inevitable
to use high-speed characteristics fully.
An optimal gate driver circuit needs intensive knowledge of
MOSFET turn-on/off characteristics and consideration of
the other critical performance requirements of the system.
This is beyond the scope of this paper and many reference
papers can be found in the industry literature.
Figure 33. Equivalent Circuit of Line Filter Stage
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
18
AN-9732
APPLICATION NOTE
Appendix 3: Experimental Verification
t
a
c
t
f
a
t
a
(b) Output Load Change from 160W to 0W
Figure 38. Output Dynamic Response at VIN=235VAC
www.fairchildsemi.com
Figure 36. Startup Performance at 95VAC, Full Load
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
19
AN-9732
APPLICATION NOTE
Definition of Terms
is the efficiency.
is the displacement angle.
B is the maximum flux swing of the core at nominal output power in Tesla.
Ae is the cross-sectional area of core.
AW is the window area of core.
BMAX is the maximum flux density of boost inductor at maximum output power in Tesla.
CCOMP,HF is the high-frequency compensation capacitance.
CCOMP,LF is the low-frequency compensation capacitance.
C
C
C
is the effective capacitance shown at the MOSFET drain pin.
EA is the effective input capacitance to meet a given displacement factor.
EXT is the external capacitance at drain-source to decrease the turn-off slope.
eff
CEQ is the equivalent input capacitance.
CFB is the feedback capacitance parallel with RFB2
.
C
OUT is the output capacitance.
COSS is the output capacitance of power MOSFET.
C
C
PAR is the parasitic capacitance at drain-source of power MOSFET.
ZCD is the capacitance connected at ZCD pin to improve noise immunity.
dWIRE is the diameter of boost inductor winding wire.
DF is the displacement factor between input voltage and input current.
fC is the crossover frequency.
fCP is the high-frequency compensation pole to attenuate the switching ripple.
fCZ is the compensation zero.
f
LINE is the line frequency.
fI is the integral gain of the compensator.
fP is the pole frequency in the PFC power stage transfer function.
f
SW is the switching frequency.
fSW,MIN is the minimum switching frequency.
I
I
CS,LIM is the pulse-by-pulse current limit level determined by sensing resistor.
DOUT,AVE is the average current of output diode.
IIN,MAX is the maximum input current from the AC outlet.
IN,MAXRMS is the maximum RMS (Root Mean Square) input current from the AC outlet.
I
IL is the inductor current at the nominal output power.
IL,PK is the maximum peak inductor current at the nominal output power.
I
I
L,RMS is the RMS value of the inductor current at the nominal output power.
L,DENSITY is the current density of the boost inductor coil.
IOUT is the nominal output current of the boost PFC stage.
I
I
K
Q,RMS is the RMS current at the power switch.
RDY,SK is the allowable sink current for the internal MOSFET in RDY pin.
SAW is the internal gain of sawtooth generator (that of FL7930 is 8.49610-6).
L is the boost inductance.
AUX is the number of turns of auxiliary winding in boost inductor.
N
NBOOST is the number of turns of primary winding in boost inductor.
NWIRE is the number of strands of boost inductor winding wire.
P
DOUT is the loss of output diode.
POUT is the nominal output power of boost PFC stage.
PQ,CON is conduction loss of the power MOSFET.
P
Q,SWOFF is turn-off loss of power MOSFET.
PQ,DISCHRGE is the drain-source capacitance discharge loss and consumed at power MOSFET.
PQ is the total loss of power MOSFET made by PQ,CON, PQ,SWOFF, and PQ,DISCHARGE
RCS is the power loss caused by current-sense resistance.
RCOMP is the compensation resistance.
.
P
RCS is the power MOSFET current-sense resistance.
RDS,ON is the static drain-source on resistance of the power switch.
RFB1 is the feedback resistance between the INV pin and output voltage.
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev. 1.0.0 • 3/23/11
20
AN-9732
APPLICATION NOTE
RFB2 is the feedback resistance between the INV pin and ground.
RL is the output load resistance in a given load condition.
RPULLUP is the pull-up resistance between the RDY pin and pull-up voltage.
RZCD is the resistor connected at the ZCD pin to optimize THD.
tHOLD is the required hold-up time.
t
OFF is the inductor current reset time.
tON,MAX is the maximum on time fixed internally.
ON,MAX1 is the programmed maximum on time.
COMP is compensation pin voltage.
t
V
VCS,LIM is power MOSFET current-sense limit voltage.
VDROP,DOUT is the forward-voltage drop of output diode.
VIN(t) is the rectified line voltage.
VIN,PK is the amplitude of line voltage.
V
LINE is RMS line voltage.
VLINE,MAX is the maximum RMS line voltage.
VLINE,MIN is the minimum RMS line voltage.
V
LINE,OVP is the line OVP trip point in RMS.
VOPTO,F is the input forward voltage drop of opto-coupler.
VOUT is the PFC output voltage.
V
OUT,MIN is the allowable minimum output voltage during the hold-up time.
VOUT,RDYH is the VOUT to trigger PFC RDY out pulls high.
VOUT,RDYL is the VOUT to trigger PFC RDY out drops to zero.
VOUT,RIPPLE is the peak-to-peak output voltage ripple.
V
PULLUP is the pull-up voltage for RDY pin.
VRDY,SAT is the internal saturation voltage of RDY pin.
V
V
REF is the internal reference voltage for the feedback input.
OVP,MAX is the maximum tolerance of Over-Voltage Protection specification
VST,COUT is the voltage stress at the output capacitor.
ST,Q is the voltage stress at the power MOSFET.
V
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
21
AN-9732
APPLICATION NOTE
References
[1] Fairchild Datasheet FAN9612, Interleaved Dual BCM, PFC Controller
[2] Fairchild Datasheet FL7930 Critical Conduction Mode PFC Controller
[3] Fairchild Application Note AN-6027, Design of Power Factor Correction Circuit Using FAN7530
[4] Fairchild Application Note AN-8035, Design of Power Factor Correction Circuit Using FAN7930
[5] Fairchild Application Note AN-6086, Design Consideration for Interleaved BCM PFC using FAN9612
[6] Robert W. Erikson, Dragan Maksimovic, Fundamentals of Power Electronics, Second Edition, Kluwer Academic
Publishers, 2001.
Related Datasheets
FL7930 — Critical Conduction Mode PFC Controller
FAN9611 / FAN9612 — Interleaved Dual BCM PFC Controllers
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode
PN2222A/MMBT2222A/PZT2222A NPN General Purpose Amplifier
FDP22N50N — 600V N-Channel MOSFET, UniFETTM
FFPF08H60S — 8A, 600V Hyperfast Rectifier
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b)
support or sustain life, or (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
© 2011 Fairchild Semiconductor Corporation
Rev. 1.0.0 • 3/23/11
www.fairchildsemi.com
22
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00210/img/page/AN-973_1186317_files/AN-973_1186317_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00210/img/page/AN-973_1186317_files/AN-973_1186317_2.jpg)
AN-9735
Design Guideline for LED Lamp Control Using Primary-Side Regulated Flyback Converter, FAN103 & FSEZ1317
FAIRCHILD
![](http://pdffile.icpdf.com/pdf2/p00213/img/page/AN-973_1201706_files/AN-973_1201706_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00213/img/page/AN-973_1201706_files/AN-973_1201706_2.jpg)
AN-9737
Design Guideline for Single-Stage Flyback AC-DC Converter Using FL6961 for LED Lighting
FAIRCHILD
![](http://pdffile.icpdf.com/pdf2/p00210/img/page/AN-973_1186318_files/AN-973_1186318_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00210/img/page/AN-973_1186318_files/AN-973_1186318_2.jpg)
AN-9738
Design Guideline on 150W Power Supply for LED Street Lighting Design Using FL7930B and FAN7621S
FAIRCHILD
![](http://pdffile.icpdf.com/pdf2/p00213/img/page/AN-974_1201707_files/AN-974_1201707_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00213/img/page/AN-974_1201707_files/AN-974_1201707_2.jpg)
AN-9741
Design Guideline for LED Lamp Control Using Primary-Side Regulated Flyback Converter, FL103M
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明