AN-9732 [FAIRCHILD]

LED Application Design Guide Using BCM Power Factor Correction (PFC) Controller for 200W Lighting System; LED应用设计指南使用BCM功率因数校正( PFC)控制器200W照明系统
AN-9732
型号: AN-9732
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

LED Application Design Guide Using BCM Power Factor Correction (PFC) Controller for 200W Lighting System
LED应用设计指南使用BCM功率因数校正( PFC)控制器200W照明系统

功率因数校正 控制器
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www.fairchildsemi.com  
AN-9732  
LED Application Design Guide Using BCM Power Factor  
Correction (PFC) Controller for 200W Lighting System  
1. Introduction  
This application note presents practical step-by-step design  
considerations for a Boundary-Conduction-Mode (BCM)  
Power-Factor-Correction (PFC) converter employing  
Fairchild PFC controller, FL7930. It includes designing the  
inductor and Zero-Current-Detection (ZCD) circuit,  
selecting the components, and closing the control loop. The  
design procedure is verified through an experimental 200W  
prototype converter.  
for another power stage controller after PFC stage or be  
transferred to the secondary side to synchronize the  
operation with PFC voltage condition. This simplifies the  
external circuit around the PFC controller and saves total  
BOM cost. The internal proprietary logic for detecting input  
voltage greatly improves the stability of PFC operation.  
Together with the maximum switching frequency clamping  
at 300KHz. FL7930 can limit inductor current within pre-  
designed value at one or two cycles of the AC-input-absent  
test to simulate a sudden blackout. Due to the startup-  
without-overshoot design, audible noise from repetitive  
OVP triggering is eliminated. Protection functions include  
output over-voltage, over-current, open-feedback, and  
under-voltage lockout.  
Unlike the Continuous Conduction Mode (CCM) technique  
often used at this power level, BCM offers inherent zero-  
current switching of the boost diodes (no reverse-recovery  
losses), which permits the use of less expensive diodes  
without sacrificing efficiency.  
The FL3930B provides an additional OVP pin that can be  
used to shut down the boost power stage when output  
voltage exceeds OVP level due to damaged resistors  
connected at the INV pin. The FL7930C provides a PFC-  
ready pin can be used to trigger other power stages when  
PFC output voltage reaches the proper level (with  
hysteresis). This signal can be used as the VCC trigger signal  
An Excel®-based design tool is available with this  
application note and the design result is shown with the  
calculation results as an example.  
Figure 1. Typical Application Circuit  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
AN-9732  
APPLICATION NOTE  
2. Operation Principle of BCM Boost PFC Converter  
The most widely used operation modes for the boost  
converter are Continuous Conduction Mode (CCM) and  
Boundary Conduction Mode (BCM). These two descriptive  
names refer to the current flowing through the energy  
storage inductor of the boost converter, as depicted in  
Figure 2. As the names indicate, the inductor current in  
CCM is continuous; while in BCM, the new switching  
period is initiated when the inductor current returns to zero,  
which is at the boundary of continuous conduction and  
discontinuous conduction operations. Even though the BCM  
operation has higher RMS current in the inductor and  
switching devices, it allows better switching condition for  
the MOSFET and the diode. As shown in Figure 2, the  
diode reverse recovery is eliminated and a fast-recovery  
diode is not needed. The MOSFET is also turned on with  
zero current, which reduces the switching loss.  
A by-product of BCM is that the boost converter runs with  
variable switching frequency that depends primarily on the  
selected output voltage, the instantaneous value of the input  
voltage, the boost inductor value, and the output power  
delivered to the load. The operating frequency changes as  
the input current follows the sinusoidal input voltage  
waveform, as shown in Figure 3. The lowest frequency  
occurs at the peak of sinusoidal line voltage.  
Figure 3. Operation Waveforms of BCM PFC  
The voltage-second balance equation for the inductor is:  
(1)  
VIN (t )tON  
VOUT VIN (t ) tOFF  
where VIN(t) is the rectified line voltage and VOUT is the  
output voltage.  
The switching frequency of BCM boost PFC converter is:  
VOUT VIN (t )  
1
1
fSW  
tON tOFF tON  
VOUT  
(2)  
VOUT VIN,PK sin  
2fLINE t  
1
Figure 2. CCM vs. BCM Control  
tON  
VOUT  
The fundamental idea of BCM PFC is that the inductor  
current starts from zero in each switching period, as shown  
in Figure 3. When the power transistor of the boost  
converter is turned on for a fixed time, the peak inductor  
current is proportional to the input voltage. Since the current  
waveform is triangular; the average value in each switching  
period is proportional to the input voltage. In a sinusoidal  
input voltage, the input current of the converter follows the  
input voltage waveform with very high accuracy and draws  
a sinusoidal input current from the source. This behavior  
makes the boost converter in BCM operation an ideal  
candidate for power factor correction.  
where VIN,PK is the amplitude of the line voltage and fLINE is  
the line frequency.  
Figure 4 shows how the MOSFET on time and switching  
frequency changes as output power decreases. When the  
load decreases, as shown in the right side of Figure 4, the  
peak inductor current diminishes with reduced MOSFET on  
time and, therefore, the switching frequency increases.  
Since this can cause severe switching losses at light-load  
condition and too-high switching frequency operation may  
occur at startup, the maximum switching frequency of  
FL7930 is limited to 300KHz.  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
2
AN-9732  
APPLICATION NOTE  
3. Startup without Overshoot and  
AC-Absent Detection  
Because feedback control speed of the PFC is typically quite  
slow, there is a gap between output voltage and feedback  
control. Therefore, Over-Voltage Protection (OVP) is  
critical at the PFC controller. Voltage dip caused by fast  
load change from light to heavy is diminished by a large  
bulk capacitor. OVP is easily triggered at startup. Switching  
starting and stopping by OVP at startup may cause audible  
noise and can increase voltage stress at startup, which may  
be higher than normal operation. This is improved if soft-  
start time is very long, but too-long start time raises the time  
needed for the output voltage to reach the rated value at  
light load. FL7930 includes a startup without overshoot  
feature. During startup, the feedback loop is controlled by  
an internal proportional gain controller and, when the output  
voltage reaches the vicinity of the rated value, changed to  
the external compensator after an internally fixed transition  
time described in the Figure 6. In short, an internal  
proportional gain controller prevents overshoot at startup;  
external conventional compensator takes over after startup.  
Figure 4. Frequency Variation of BCM PFC  
Since the design of the filter and inductor for a BCM PFC  
converter with variable switching frequency should be at  
minimum frequency condition, it is worthwhile to examine  
how the minimum frequency of BCM PFC converter  
changes with operating conditions.  
Figure 5 shows the minimum switching frequency, which  
occurs at the peak of line voltage as a function of the RMS  
line voltage for three output voltage settings. It is interesting  
that, depending on where the output voltage is set, the  
minimum switching frequency may occur at the minimum  
or at the maximum line voltage. When the output voltage is  
approximately 405V, the minimum switching frequency is  
the same for both low line (85VAC) and high line (265VAC).  
Figure 6. Startup Without Overshoot  
FL7930 eliminates AC input voltage detection to save the  
power loss caused by an input-voltage-sensing resistor array  
and to optimize THD. Therefore, no information about input  
voltage is available at the internal controller. In many cases,  
the VCC of PFC controller is supplied by an independent  
power source, like standby power, so when the electric  
power is suddenly interrupted during one or two AC line  
periods, VCC is still alive during that time and PFC output  
voltage drops. Accordingly, the control loop tries to  
compensate output voltage drop and control voltage reaches  
its maximum. When AC line input voltage is live, control  
voltage allows high switching current and creates stress on  
the MOSFET and diode. To protect against this, FL7930  
checks if the input AC voltage exists. Once controller  
verifies that the input voltage does not exist, soft-start is  
reset and waits until AC input voltage is applied again. Soft-  
start manages the turn-on time for smooth operation after  
detecting that the AC voltage is live and results in less  
voltage and current stress during startup.  
Figure 5. Minimum Switching Frequency vs. RMS Line  
Voltage (L = 200µH, POUT = 200W)  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
3
AN-9732  
APPLICATION NOTE  
Figure 8. AC-Off Operation with AC-Absent  
Detection Circuit  
Figure 7. AC-Off Operation without AC-Absent  
Detection Circuit  
4. Design Considerations  
In this section, a design procedure is presented using the  
schematic in Figure 9 as a reference. A 200W PFC  
application with universal input range is selected as a design  
example. The design specifications are:  
. Hold-up Time Requirement: Output Voltage Should Not  
Drop Below 330V During One Line Cycle  
. Output Voltage Ripple: Less than 8VPP  
. Minimum Switching Frequency: Higher than 50kHz  
. Control Bandwidth: 5~15Hz  
. Line Voltage Range: 90~265VAC (Universal Input), 50Hz  
. Nominal Output Voltage and Current: 400V/0.5A (200W)  
. VCC supplied from auxiliary power supply.  
Figure 9. Reference Circuit for Design Example of BCM Boost PFC  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
4
AN-9732  
APPLICATION NOTE  
[STEP-1] Define System Specifications  
.
.
.
.
.
.
Line Frequency Range (VLINE,MIN and VLINE,MAX  
Line Frequency (fLINE  
Output-Voltage (VOUT  
Output Load Current (IOUT  
)
)
)
)
Output Power (POUT =VOUT IOUT  
)
Estimated Efficiency ()  
To calculate the maximum input power, it is necessary to  
estimate the power conversion efficiency. At universal input  
range, efficiency is recommended at 0.9; 0.93~0.95 is  
recommended when input voltage is high.  
When input voltage is set at the minimum, input current  
becomes the maximum to deliver the same power compared  
at high line. Maximum boost inductor current can be  
detected at the minimum line voltage and at its peak.  
Inductor current can be divided into two categories; one is  
rising current when MOSFET is on and the other is output  
diode current when MOSFET is off, as shown in Figure 10.  
Figure 10. Inductor and Input Current  
Because switching frequency is much higher than line  
frequency, input current can be assumed to be constant  
during a switching period, as shown in Figure 11.  
[STEP-2] Boost Inductor Design  
The boost inductor value is determined by the output power  
and the minimum switching frequency. The minimum  
switching frequency must be higher than the maximum  
audible frequency band of 20kHz. Minimum frequency near  
20kHz can decrease switching loss with the cost of  
increased inductor size and line filter size. Too-high  
minimum frequency may increase the switching loss and  
make the system respond to noise. Selecting in the range of  
about 30~60kHz is a common choice; 40~50kHz is  
recommended with FL7930.  
The minimum switching frequency may appear at minimum  
input voltage or maximum input voltage, depending on the  
output voltage level. When PFC output voltage is less than  
405V, minimum switching appears at the maximum input  
voltage, according to application note AN-6086. Inductance  
is obtained using the minimum switching frequency:  
Figure 11. Inductor and Input Current  
With the estimated efficiency, Figure 10 and Figure 11  
inductor current peak (IL,PK), maximum input current  
(IIN,MAX), and input Root Mean Square (RMS) current  
(IIN,MAXRMS) are given as:  
2
4 POUT  
   
2VLINE  
IL,PK  
[ A ]  
L   
[ H ]  
(3)  
2 VLINE ,MIN  
2VLINE  
2VLINE  
(6)  
4 fSW ,MIN POUT 1   
VOUT  
IIN,MAX IL,PK / 2 [ A]  
IIN,MAXRMS IIN,MAX  
(4)  
(5)  
where L is boost inductance and fSW,MIN is the minimum  
switching frequency.  
/
2 [ A]  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
5
AN-9732  
APPLICATION NOTE  
The maximum on time needed to carry peak inductor  
current is calculated as:  
I
L,PK  
t
L   
[s]  
ON,MAX  
(7)  
2 V  
LINE,MIN  
Once inductance and the maximum inductor current are  
calculated, the number of turns of the boost inductor should  
be determined considering the core saturation. The  
minimum number of turns is given as:  
Figure 13. A and AW  
e
IL,PK L[ H ]  
Ae [ mm2 ] B  
NBOOST  
[Turns ]  
(8)  
where Ae is the cross-sectional area of core and B is the  
maximum flux swing of the core in Tesla. B should be set  
below the saturation flux density.  
Figure 12 shows the typical B-H characteristics of ferrite  
core from TDK (PC45). Since the saturation flux density  
(B) decreases as the temperature increases, the high  
temperature characteristics should be considered.  
RMS inductor current (IL,RMS) and current density of the coil  
(IL,DENSITY) can be given as:  
IL,PK  
IL,RMS  
[ A]  
IL,RMS  
(9)  
6
IL,DENSITY  
[ A / mm2 ]  
d
2  
(10)  
wire  
  
Nwire  
2
where dWIRE is the diameter of winding wire and NWIRE is  
the number of strands of winding wire.  
When selecting wire diameter and strands; current density,  
window area (AW, refer to Figure 13) of selected core, and  
fill factor need to be considered. Winding sequence of the  
boost inductor is relatively simple compared to a DC-DC  
converter, so fill factor can be assumed about 0.2~0.3.  
Layers cause the skin effect and proximity effect in the coil,  
so real current density may be higher than expected.  
Figure 12. Typical B-H Curves of Ferrite Core  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
6
AN-9732  
APPLICATION NOTE  
Auxiliary winding must give enough energy to trigger ZCD  
threshold to detect zero current. Minimum auxiliary winding  
turns are given as:  
[STEP-3] Inductor Auxiliary Winding Design  
Figure 14 shows the application circuit of nearby ZCD pin  
from auxiliary winding.  
1.5V NBOOST  
NAUX  
[Turns]  
(11)  
VOUT 2VLINE,MAX  
where 1.5V is the positive threshold of the ZCD pin.  
To guarantee stable operation, auxiliary winding turns are  
recommended to add 2~3 turns to the calculation result of  
Equation (11). However, too many auxiliary winding turns  
raise the negative clamping loss at high line and positive  
clamping loss at low line.  
Figure 14. Application Circuit of ZCD Pin  
The first role of ZCD winding is detecting the zero-current  
point of the boost inductor. Once the boost inductor current  
becomes zero, the effective capacitor shown at the  
MOSFET drain pin (Ceff) and the boost inductor resonate  
together. To minimize the constant turn-on time  
deterioration and turn-on loss, the gate is turned on again  
when the drain source voltage of the MOSFET (VDS)  
reaches the valley point shown in Figure 15. When input  
voltage is lower than half of the boosted output voltage,  
Zero Voltage Switching (ZVS) is possible if MOSFET turn-  
on is triggered at valley point.  
[STEP-4] ZCD Circuit Design  
If a transition time when VAUXILIARY drops from 1.4V to 0V  
is ignored from Figure 15, the needed additional delay by  
the external resistor and capacitor is one quarter of the  
resonant period. The time constant made by ZCD resistor  
and capacitor should be the same as one quarter of the  
resonant period:  
2Ceff L  
(12)  
RZCD CZCD  
4
where Ceff is the effective capacitor shown at the MOSFET  
drain pin; CZCD is the external capacitance at the ZCD pin;  
and RZCD is the external resistance at the ZCD pin.  
The second role of RZCD is the current limit of the internal  
negative clamp circuit when auxiliary voltage drops to  
negative due to MOSFET turn on. ZCD voltage is clamped  
0.65V and minimum RZCD can be given as:  
NAUX  
2VLINE,MAX 0.65V  
(13)  
NBOOST  
RZCD  
[]  
3mA  
where 3mA is the clamping capability of the ZCD pin.  
The calculation result of Equation (13) is normally higher  
than 15k. If 20kis assumed as RZCD, calculated CZCD  
from Equation (12) is around 10pF when the other  
components are assumed as conventional values used in the  
www.fairchildsemi.com  
Figure 15. ZCD Detection Waveforms  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
7
AN-9732  
APPLICATION NOTE  
field. Because most IC pins have several pF parasitic  
capacitance, CZCD can be eliminated when RZCD is higher  
than 30k. However, a small capacitor would be helpful  
when auxiliary winding suffers from operating noise.  
The PFC control loop has two conflicting goals: output  
voltage regulation and making the input current shape the  
same as input voltage. If the control loop reacts to regulate  
output voltage smoothly, as shown in Figure 16, control  
voltage varies widely with the input voltage variation. Input  
current acts to the control loop and sinusoidal input current  
shape cannot be attained. This is the reason control response  
of most PFC topologies is very slow and turn-on time over  
AC period is kept constant. This is also the reason output  
voltage ripple is made by input and output power  
relationship, not by control-loop performance.  
VIN & VOUT  
Figure 17. Inductor Current at AC Voltage Peak  
VCONTROL  
IACIN  
t
Figure 16. Input Current Deterioration by Fast Control  
If on-time is controlled constantly over one AC period,  
inductor current peak follows AC input voltage shape and  
achieves good power factor. Off-time is basically inductor  
current reset time due to the boundary mode and is  
determined by the input and output voltage difference.  
When input voltage is at its peak, the voltage difference  
between input and output voltage is small, and long turn-off  
time is necessary. When input voltage is near zero, turn-off  
time is short, as shown in Figure 17 and Figure 18. Though  
inductor current drops to zero, there is a minor delay,  
explained above. The delay can be assumed as fixed when  
AC is at line peak and zero. Near AC line peak, the inductor  
current decreasing slope is slow and inductor current slope  
is also slow during the ZCD delay. The amount of negative  
current is not much higher than the inductor current peak.  
Near the AC line zero, inductor current decreasing slope is  
very high and the amount of negative current is higher than  
positive inductor current peak because input voltage is  
almost zero.  
Figure 18. Inductor Current at AC Voltage Zero  
Negative inductor current creates zero current distortion and  
degrades the power factor. Improve this by extending turn-  
on time at the AC line input near the zero cross.  
Negative auxiliary winding voltage, when MOSFET is  
turned on, is linearly proportional to the input voltage.  
Sourcing current generated by the internal negative  
clamping circuit is also proportional to sinusoidal input  
voltage. That current is detected internally and added to the  
internal sawtooth generator, as shown in Figure 19.  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
8
AN-9732  
APPLICATION NOTE  
With the aid of IZCD, an internal sawtooth generator slope is  
changed and turn-on time varies as shown in Figure 22.  
Figure 19. ZCD Current and Sawtooth Generator  
When AC input voltage is almost zero, no negative current  
is generated from inside, but sourcing current when input  
voltage is high is used to raise the sawtooth generator slope  
and turn-on time is shorter. As a result, turn-on time when  
AC voltage is zero is longer compared to AC voltage, in  
peaks shown in Figure 20.  
Figure 22. Internal Sawtooth Wave Slope Variation  
RZCD also influences control range. Because FL7930 doesn’t  
detect input voltage, voltage-mode control value is  
determined by the turn-on time to deliver needed current to  
boost output voltage. When input voltage increases, control  
voltage decreases rapidly. For example, if input voltage  
doubles, control voltage drops to one quarter. Making  
control voltage maximum when input voltage is low and at  
full load is necessary to use the whole control range for the  
rest of the input voltage conditions. Matching maximum  
turn-on time needed at low line is calculated in Equation (7)  
and turn-on time adjustment by RZCD guarantees use of the  
full control range. RZCD for control range optimization is  
obtained as:  
Figure 20. THD Improvement  
The current that comes from the ZCD pin, when auxiliary  
voltage is negative, depends on RZCD. The second role of  
RZCD is also related with the improving the Total Harmonic  
Distortion (THD).  
2 VLINE,MIN NAUX  
0.469mA NBOOST  
28s  
tON,MAX1 tON,MAX  
RZCD  
[ ]  
(14)  
The third role of RZCD is making the maximum turn-on time  
adjustment. Depending on sourcing current from the ZCD  
pin, the maximum on-time varies as in Figure 21.  
where:  
ON,MAX is calculated by Equation (7);  
t
tON,MAX1 is maximum on-time programming 1;  
NBOOST is the winding turns of boost inductor; and  
NAUX is the auxiliary winding turns.  
RZCD calculated by Equation (13) is normally lower than the  
value calculated in Equation (14). To guarantee the needed  
turn on-time for the boost inductor to deliver rated power,  
the RZCD from Equation (13) is normally not suitable. RZCD  
should be higher than the result of Equation (14) when  
output voltage drops as a result of low line voltage.  
Figure 21. Maximum On-Time Variation vs. IZCD  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
9
AN-9732  
APPLICATION NOTE  
When input voltage is high and load is light, not much input  
current is needed and control voltage of VCOMP touches  
switching stop level, such as if FL7930 is 1V. However, in  
some applications, a PFC block is needed to operate  
normally at light load. To compensate control range  
correctly, input voltage sensing is necessary, such as with  
Fairchild’s interleaved PFC controller FAN9612, or special  
care on sawtooth generator is necessary. Without it,  
optimizing RZCD is only slightly helpful for control range.  
This is explained and depicted in the associated Excel®  
design tool “COMP Range” worksheet. To guarantee  
enough control range at high line, clamping output voltage  
lower than rated on the minimum input condition can help.  
much ripple on the output voltage may cause premature  
OVP during normal operation, the peak-to-peak ripple  
specification should be smaller than 15% of the nominal  
output voltage.  
The hold-up time should also be considered when  
determining the output capacitor as:  
2POUT tHOLD  
COUT  
[f ]  
2
(16)  
VOUT 0.5VOUT,RIPPLE  
2 VOUT,MIN  
where tHOLD is the required hold-up time and VOUT,MIN is the  
minimum output voltage during hold-up time.  
I
diode  
I
diode,ave  
I
=IOUT(1-cos(4p.fL.t))  
diode,ave  
I
OUT  
I
OUT  
V
=
OUT,ripple  
2p.fL.COUT  
V
OUT  
t
Figure 23. Output Voltage Ripple  
The voltage rating of capacitor can be obtained as:  
VOV  
P,MAX  
VST,COUT  
VOUT [V ]  
(17)  
VREF  
[STEP-5] Output Capacitor Selection  
where VOVP,MAX and VREF are the maximum tolerance  
specifications of over-voltage protection triggering voltage  
and reference voltage at error amplifier.  
The output voltage ripple should be considered when  
selecting the output capacitor. Figure 23 shows the line  
frequency ripple on the output voltage. With a given  
specification of output ripple, the condition for the output  
capacitor is obtained as:  
IOUT  
COUT  
[F ]  
(15)  
2fLINE VOUT,RIPPLE  
where VOUT,RIPPLE is the peak-to-peak output voltage ripple  
specification.  
The output voltage ripple caused by ESR of electrolytic  
capacitor is not as serious as other power converters because  
output voltage is high and load current is small. Since too  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
10  
AN-9732  
APPLICATION NOTE  
output diode turns on; a minor voltage peak can be shown at  
drain pin, which is proportional to MOSFET turn-off speed.  
MOSFET loss can be divided into three parts: conduction  
loss, turn-off loss, and discharge loss. Boundary mode  
guarantees Zero Current switching (ZCS) of MOSFET  
when turned on, so turn-on loss is negligible.  
The MOSFET RMS current and conduction loss are  
obtained as:  
4 2 V  
LINE [A]  
9VOUT  
1
6
(19)  
IQ,RMS IL,PK  
P
IQ,RMS  
2 RDS,ON [W]  
(20)  
Q,CON  
where IQ,RMS is the RMS value of MOSFET current,  
PQ,CON is the conduction loss caused by MOSFET current,  
and RDS,ON is the ON resistance of the MOSFET.  
ON resistance is described as “static ON resistance” and  
varies depending on junction temperature. That variation  
information is normally supplied as a graph in the datasheet  
and may vary by manufacturer. When calculating  
conduction loss, generally multiply three with the RDS,ON for  
more accurate estimation.  
The precise turn-off loss calculation is difficult because of  
the nonlinear characteristics of MOSFET turn off. When  
piecewise linear current and voltage of MOSFET during  
turn-off and inductive load are assumed, MOSFET turn-off  
loss is obtained as:  
1
PQ,SWOFF  
VOUT IL tOFF fSW [W]  
(21)  
2
where tOFF is the turn-off time and fSW is the switching  
frequency.  
[STEP-6] MOSFET and DIODE Selection  
Boundary mode PFC inductor current and switching  
frequency vary at every switching moment. RMS inductor  
current and average switching frequency over one AC  
period can be used instead of instantaneous values.  
Selecting the MOSFET and diode needs extensive  
knowledge and calculation regarding loss mechanisms and  
gets more complicated if proper selection of a heatsink is  
added. Sometimes the loss calculation itself is based on  
assumptions that may be far from reality. Refer to industry  
resources regarding these topics. This note shows the  
voltage rating and switching loss calculations based on the  
linear approximation.  
Individual loss portions are changed according to the input  
voltage; maximum conduction loss appears at low line  
because of high input current; and maximum switching off  
loss appears at high line because of the high switching  
frequency. Thus, resulting loss is always lower than the  
summation of the two losses calculated above.  
The voltage stress of the MOSFET is obtained as:  
VOV  
P,MAX  
Capacitive discharge loss made by effective capacitance  
VST,Q  
VOUT VDROP,DOUT [V ]  
(18)  
VREF  
shown at drain and source, which includes MOSFET COSS  
,
an externally added capacitor to reduce dv/dt and parasitic  
capacitors shown at drain pin, is also dissipated at  
MOSFET. That loss is calculated as:  
where VDROP,DOUT is the maximum forward-voltage drop of  
output diode.  
After the MOSFET is turned off, the output diode turns on  
and a large output electrolytic capacitor is shown at the  
drain pin, thus a drain voltage clamping circuit that is  
necessary on other topologies is not necessary in PFC.  
During the turn-off transient, boost inductor current changes  
the path from MOSFET to output diode and before the  
1
PQ,DISCHG  
COSS CEXT CPAR  
V2 fSW [W]  
OUT  
(22)  
2
where:  
COSS is the output capacitance of MOSFET;  
CEXT is an externally added capacitor at drain and source of  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
11  
AN-9732  
APPLICATION NOTE  
[STEP-8] Determine Current-Sense Resistor  
It is typical to set pulse-by-pulse current limit level a little  
higher than the maximum inductor current calculated by  
Equation (3). For 10% margin, the current-sensing resistor is  
selected as:  
VCS,LIM  
RCS  
[]  
(26)  
IL,PK 1.1  
Once resistance is calculated, its power loss at low line is  
calculated as:  
PRCS IQ2,RMSRCS [W]  
(27)  
Power rating of the sensing resistor is recommended a twice  
the power rating calculated in Equation (27).  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
12  
AN-9732  
APPLICATION NOTE  
increase as input voltage increases, and DC gain increases  
as load decreases, high input voltage and light load is the  
worst condition for feedback loop design.  
[STEP-9] Design Compensation Network  
The boost PFC power stage can be modeled as shown in  
Figure 24. MOSFET and diode can be changed to loss-free  
resistor model and then be modeled as a voltage-controlled  
current source supplying RC network.  
Figure 25. Control-to-Output Transfer Function for  
Different Input Voltages  
Figure 24. Small Signal Modeling of the Power Stage  
Figure 26. Control-to-Output Transfer Function for  
Different Loads  
By averaging the diode current during the half line cycle,  
the low-frequency behavior of the voltage controlled current  
source of Figure 24 is obtained as:  
Proportional and integration (PI) control with high-  
frequency pole is typically used for compensation, as shown  
in Figure 27. The compensation zero (fCZ) introduces phase  
boost, while the high-frequency compensation pole (fCP)  
attenuates the switching ripple.  
2V  
LINE   
4VOUT  
2VLINE  
L
IDOUT,AVE KSAW  
[ A]  
(28)  
where:  
The transfer function of the compensation network is  
obtained as:  
L is the boost inductance,  
VOUT is the output voltage; and  
SAW is the internal gain of sawtooth generator  
(that of FL7930 is 8.49610-6).  
K
s
1  
2fI  
s
2fCZ  
s
vCOMP  
vOUT  
Then the low-frequency, small-signal, control-to-output  
transfer function is obtained as:  
1  
2fCP  
2.5  
115mho  
CCOMP, LF CCOMP, HF  
fI   
fCZ  
fCP  
V
LINE2 RL  
vOUT  
vCOMP  
1
VOUT 2  
KSAW  
(30)  
(29)  
s
4VOUT L  
1  
1
where  
2fp  
2RCOMP CCOMP, LF  
2
where  
and RL is the output load resistance  
fp  
1
2RLCOUT  
CCOMP, LF CCOMP, HF  
in a given load condition.  
2RCOMP  
CCOMP, LF CCOMP, HF  
Figure 25 and Figure 26 show the variation of the control-  
to-output transfer function for different input voltages and  
different loads. Since DC gain and crossover frequency  
If CCOMP,LF is much larger than CCOMP,HF, fI and fCP can be  
simplified as:  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
13  
AN-9732  
APPLICATION NOTE  
The procedure to design the feedback loop is:  
2.5  
115mho  
fI   
[Hz]  
VOUT 2CCOMP, LF  
a. Determine the crossover frequency (fC) around  
1/10~1/5 of line frequency. Since the control-to-  
output transfer function of the power stage has  
-20dB/dec slope and -90o phase at the crossover  
frequency, as shown in Figure 28; it is required to  
place the zero of the compensation network (fCZ)  
around the crossover frequency so 45phase  
margin is obtained. The capacitor CCOMP,LF is  
determined as:  
(31)  
1
fCP  
[Hz]  
2RCOMP CCOMP, HF  
G
115mho  
M
KSAW  
2VOUT2 LCOUT  
VLINE  
22.5115mho  
CCOMP, LF  
[f ]  
(34)  
2
2fC  
To place the compensation zero at the crossover  
frequency, the compensation resistor is obtained as:  
1
RCOMP  
[]  
(35)  
2fC CCOMP,LF  
b. Place this compensator high-frequency pole (fCP) at  
least a decade higher than fC to ensure that it does  
not interfere with the phase margin of the voltage  
regulation loop at its crossover frequency. It should  
also be sufficiently lower than the switching  
frequency of the converter for noise to be  
effectively attenuated. The capacitor CCOMP,HF is  
determined as:  
1
CCOMP,HF  
[]  
(36)  
2fCP RCOMP  
Figure 27. Compensation Network  
The feedback resistor is chosen to scale down the output  
voltage to meet the internal reference voltage:  
RFB1  
VOUT 2.5V  
(32)  
RFB1 RFB2  
Typically, high RFB1 is used to reduce power consumption  
and, at the same time, CFB can be added to raise the noise  
immunity. The maximum CFB currently used is several nano  
farads. Adding a capacitor at the feedback loop introduces a  
pole as:  
1
fFP  
2  
RFB1 // RFB2  
CFB  
Figure 28. Compensation Network Design  
(33)  
1
[Hz]  
2RFB2 CFB  
R
R  
FB2  
R  
FB2  
FB1  
where  
R
//RFB2   
FB1  
R
FB1  
Though RFB1 is high, pole frequency made by the  
synthesized total resistance and several nano farads is  
several kilo hertz and rarely affects control-loop response.  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
14  
AN-9732  
APPLICATION NOTE  
[STEP-10] Line Filter Capacitor Selection  
It is typical to use small bypass capacitors across the bridge  
rectifier output stage to filter the switching current ripple, as  
shown in Figure 29. Since the impedance of the line filter  
inductor at line frequency is negligible compared to the  
impedance of the capacitors, the line frequency behavior of  
the line filter stage can be modeled, as shown in Figure 29.  
Even though the bypass capacitors absorb switching ripple  
current, they also generate circulating capacitor current,  
which leads the line voltage by 90o, as shown in Figure 30.  
The circulating current through the capacitor is added to the  
load current and generates displacement between line  
voltage and current.  
The displacement angle is given by:  
  
VLINE  
2 2fLINE CEQ  
tan1  
(37)  
P
OUT  
where CEQ is the equivalent capacitance that appears across  
the AC line (CEQ=CF1+CF2+CHF).  
The resultant displacement factor is:  
DF cos  
   
(38)  
Since the displacement factor is related to power factor, the  
capacitors in the line filter stage should be selected  
carefully. With a given minimum displacement factor  
(DFMIN) at full-load condition, the allowable effective input  
capacitance is obtained as:  
POUT  
CEA  
tan  
cos1  
DFMN  
  
[F]  
(39)  
  
VLINE  
2 2fLINE  
One way to determine if the input capacitor is too high or  
PFC control routine has problems is to check Power Factor  
(PF) and Total Harmonic Distortion (THD). PF is the degree  
to which input energy is effectively transferred to the load  
by the multiplication of displacement factor and THD that is  
input current shape deterioration ratio. PFC control loop  
rarely has no relation to displacement factor and input  
capacitor rarely has no impact on the input current shape. If  
PF is low (high is preferable), but THD is quite good (low is  
preferable), it can be concluded that input capacitance is too  
high and PFC controller is fine.  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
15  
AN-9732  
APPLICATION NOTE  
Figure 29. Equivalent Circuit of Line Filter Stage  
Figure 30. Line Current Displacement  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
16  
AN-9732  
APPLICATION NOTE  
Appendix 1: Use of the RDY Pin for FL7930C  
Typically, boosted output voltage from the PFC block is  
used as input voltage to the DC-DC conversion block. For  
some types of DC-DC converter, it is recommended to  
trigger operation after the input voltage raised to some level.  
For example, LLC resonant converter or forward  
converter’s input voltage is limited to some range to  
enhance performance or guarantee the stable operation.  
A fast diode, such as 1N4148, is needed to prohibit the  
emitter-base breakdown. Without that diode, when RDY  
voltage drops to VRDY,SAT after being pulled up, emitter  
voltage maintains operating voltage for LLC controller and  
almost all the voltage is applied to the emitter and base.  
Breakdown current flows from emitter, base, and drain of  
the MOSFET to the source of MOSFET. Because a large  
electrolytic capacitor is typically used at the VCC supply,  
that breakdown current flows high for a long time. In this  
case, the internal MOSFET may be damaged since the  
external small-signal bipolar junction transistor current  
capability is higher than the internal RDY MOSFET.  
The FL7930C provides a PFC-ready pin that can be used to  
trigger other power stage when PFC output voltage reaches  
the proper level.  
For that purpose, the PFC RDY pin is assigned and can be  
used as a acknowledge signal for the DC-DC conversion  
stages. When PFC output voltage rises higher than the  
internal threshold, PFC RDY output is pulled HIGH by the  
external pull-up voltage and drops to zero with hysteresis.  
Once circuit configuration is settled, voltage after  
subtracting forward-voltage drop of the diode and voltage  
drop (by the multiplication of base current and RPULLUP  
)
from the VCC of FL7930C is available for the LLC  
controller’s VCC source.  
2.240V  
VOUT,RDYH  
VOUT [V]  
VOUT [V]  
2.500V  
1.640V  
2.500V  
Another example is using RDY when the secondary side  
needs PFC voltage information. When a Cold Cathode  
Fluorescent Lamp (CCFL) is used for the backlight source  
of an LCD TV, the inverter stage to ignite CCFL can  
receive PFC output voltage directly. For that application,  
Figure 32 can be a suitable circuit configuration.  
(40)  
VOUT,RDYL  
where VOUT,RDYH is the VOUT voltage to trigger PFC RDY  
output to pull HIGH and VOUT,RDYL is the VOUT voltage to  
trigger PFC ready output to drop to zero.  
If rated VOUT is 400VDC, then VOUT,RDYH is 358VDC, and  
V
OUT,RDYL is 262VDC.  
When LLC resonant converter is assumed to connect at the  
PFC output, the RDY pin can control the VCC for the LLC  
controller, as shown in Figure 31.  
Figure 32. RDY Application Circuit Using Opto-Coupler  
With this application circuit, the minimum RPULLUP is given  
by Equation (42) and the maximum RPULLUP is limited by  
sufficient current to guarantee stable operation of the opto-  
coupler. Assuming 1mA is the typical quantity to drive  
opto-coupler, the maximum RPULLUP is:  
VPULLUP VOPTO,F  
Figure 31. RDY Application Circuit for VCC Driving  
RPULLUP  
[]  
(42)  
1mA  
RPULLUP is chosen based on the current capability of internal  
open-drain MOSFET and can be obtained as:  
where VOPTO,R is the input forward-voltage drop of the opto-  
coupler.  
VPULLUPVRDY,SAT  
RPULLUP  
[]  
(41)  
It may possible that a secondary microcontroller has  
authority to give a trigger signal to the CCFL inverter  
controller; however, after combining the microcontroller  
signal and RDY signal from the primary-side, the inverter  
stage is triggered only when the two signals meet the  
requirements at the same time.  
IRDY,SK  
where VPULLUP is the pull-up voltage, VRDY,SAT is the  
saturation voltage of the internal MOSFET, and IRDY,SK is  
the allowable sink current for the internal MOSFET.  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
17  
AN-9732  
APPLICATION NOTE  
Appendix 2: Gate Driver Design  
FL7930 directly drives the gate of the MOSFET and various  
combinations of gate driver circuits are possible. Figure 33  
and Figure 31 show the three circuits that are widely used.  
The most difficult and uncertain task in direct gate drive is  
optimizing circuit layout. Gate driving path from the OUT  
pin, resistor, MOSFET gate, and MOSFET source to the  
GND pin should be as short as possible to reduce parasitic  
inductance; which may make MOSFET on/off speed slow  
or introduce unwanted gate oscillation. Using a wider PCB  
pattern for this lane reduces parasitic inductance. To damp  
unwanted gate oscillation made by the capacitance at the  
gate pin and parasitic inductance formed by MOSFET  
internal bonding wire and PCB pattern, proper resistance  
can match the impedance at the resonant frequency. To meet  
EMI regulations or for the redundant system, fast gate speed  
can be sacrificed by increasing serial resistance between the  
gate driver and gate.  
When only one resistor is used, the turn-on and turn-off  
paths follow the same routine and turn-on and turn-off speed  
cannot be changed simultaneously. To cover this, make  
different paths by two resistors and diode if possible. Turn-  
off current flows through the diode first, instead of RON, and  
then RON and ROFF show together. Accordingly, faster turn  
off is possible. However, turn-off path using internal gate  
driver’s sinking path and current is limited by sinking  
current capability. If a PNP transistor is added between the  
gate and source of the MOSFET, the gate is shorted to  
source locally without sharing the current path to the gate  
driver. This makes the gate discharge to the much smaller  
path than that made by the controller. The possibility of  
ground bounce is reduced and power dissipation in the gate  
driver is reduced. Due to new high-speed MOSFET types  
such as SupreMOS® or SuperFET, gate speed is getting  
fast. This decreases the switching loss of the MOSFET. At  
the same time, power systems suffer from the EMI  
deterioration or noise problems, like gate oscillation.  
Therefore, sometimes a gate discharge circuit is inevitable  
to use high-speed characteristics fully.  
An optimal gate driver circuit needs intensive knowledge of  
MOSFET turn-on/off characteristics and consideration of  
the other critical performance requirements of the system.  
This is beyond the scope of this paper and many reference  
papers can be found in the industry literature.  
Figure 33. Equivalent Circuit of Line Filter Stage  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
18  
AN-9732  
APPLICATION NOTE  
Appendix 3: Experimental Verification  
t
a
c
t
f
a
t
a
(b) Output Load Change from 160W to 0W  
Figure 38. Output Dynamic Response at VIN=235VAC  
www.fairchildsemi.com  
Figure 36. Startup Performance at 95VAC, Full Load  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
19  
AN-9732  
APPLICATION NOTE  
Definition of Terms  
is the efficiency.  
is the displacement angle.  
B is the maximum flux swing of the core at nominal output power in Tesla.  
Ae is the cross-sectional area of core.  
AW is the window area of core.  
BMAX is the maximum flux density of boost inductor at maximum output power in Tesla.  
CCOMP,HF is the high-frequency compensation capacitance.  
CCOMP,LF is the low-frequency compensation capacitance.  
C
C
C
is the effective capacitance shown at the MOSFET drain pin.  
EA is the effective input capacitance to meet a given displacement factor.  
EXT is the external capacitance at drain-source to decrease the turn-off slope.  
eff  
CEQ is the equivalent input capacitance.  
CFB is the feedback capacitance parallel with RFB2  
.
C
OUT is the output capacitance.  
COSS is the output capacitance of power MOSFET.  
C
C
PAR is the parasitic capacitance at drain-source of power MOSFET.  
ZCD is the capacitance connected at ZCD pin to improve noise immunity.  
dWIRE is the diameter of boost inductor winding wire.  
DF is the displacement factor between input voltage and input current.  
fC is the crossover frequency.  
fCP is the high-frequency compensation pole to attenuate the switching ripple.  
fCZ is the compensation zero.  
f
LINE is the line frequency.  
fI is the integral gain of the compensator.  
fP is the pole frequency in the PFC power stage transfer function.  
f
SW is the switching frequency.  
fSW,MIN is the minimum switching frequency.  
I
I
CS,LIM is the pulse-by-pulse current limit level determined by sensing resistor.  
DOUT,AVE is the average current of output diode.  
IIN,MAX is the maximum input current from the AC outlet.  
IN,MAXRMS is the maximum RMS (Root Mean Square) input current from the AC outlet.  
I
IL is the inductor current at the nominal output power.  
IL,PK is the maximum peak inductor current at the nominal output power.  
I
I
L,RMS is the RMS value of the inductor current at the nominal output power.  
L,DENSITY is the current density of the boost inductor coil.  
IOUT is the nominal output current of the boost PFC stage.  
I
I
K
Q,RMS is the RMS current at the power switch.  
RDY,SK is the allowable sink current for the internal MOSFET in RDY pin.  
SAW is the internal gain of sawtooth generator (that of FL7930 is 8.49610-6).  
L is the boost inductance.  
AUX is the number of turns of auxiliary winding in boost inductor.  
N
NBOOST is the number of turns of primary winding in boost inductor.  
NWIRE is the number of strands of boost inductor winding wire.  
P
DOUT is the loss of output diode.  
POUT is the nominal output power of boost PFC stage.  
PQ,CON is conduction loss of the power MOSFET.  
P
Q,SWOFF is turn-off loss of power MOSFET.  
PQ,DISCHRGE is the drain-source capacitance discharge loss and consumed at power MOSFET.  
PQ is the total loss of power MOSFET made by PQ,CON, PQ,SWOFF, and PQ,DISCHARGE  
RCS is the power loss caused by current-sense resistance.  
RCOMP is the compensation resistance.  
.
P
RCS is the power MOSFET current-sense resistance.  
RDS,ON is the static drain-source on resistance of the power switch.  
RFB1 is the feedback resistance between the INV pin and output voltage.  
© 2011 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
Rev. 1.0.0 • 3/23/11  
20  
AN-9732  
APPLICATION NOTE  
RFB2 is the feedback resistance between the INV pin and ground.  
RL is the output load resistance in a given load condition.  
RPULLUP is the pull-up resistance between the RDY pin and pull-up voltage.  
RZCD is the resistor connected at the ZCD pin to optimize THD.  
tHOLD is the required hold-up time.  
t
OFF is the inductor current reset time.  
tON,MAX is the maximum on time fixed internally.  
ON,MAX1 is the programmed maximum on time.  
COMP is compensation pin voltage.  
t
V
VCS,LIM is power MOSFET current-sense limit voltage.  
VDROP,DOUT is the forward-voltage drop of output diode.  
VIN(t) is the rectified line voltage.  
VIN,PK is the amplitude of line voltage.  
V
LINE is RMS line voltage.  
VLINE,MAX is the maximum RMS line voltage.  
VLINE,MIN is the minimum RMS line voltage.  
V
LINE,OVP is the line OVP trip point in RMS.  
VOPTO,F is the input forward voltage drop of opto-coupler.  
VOUT is the PFC output voltage.  
V
OUT,MIN is the allowable minimum output voltage during the hold-up time.  
VOUT,RDYH is the VOUT to trigger PFC RDY out pulls high.  
VOUT,RDYL is the VOUT to trigger PFC RDY out drops to zero.  
VOUT,RIPPLE is the peak-to-peak output voltage ripple.  
V
PULLUP is the pull-up voltage for RDY pin.  
VRDY,SAT is the internal saturation voltage of RDY pin.  
V
V
REF is the internal reference voltage for the feedback input.  
OVP,MAX is the maximum tolerance of Over-Voltage Protection specification  
VST,COUT is the voltage stress at the output capacitor.  
ST,Q is the voltage stress at the power MOSFET.  
V
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
21  
AN-9732  
APPLICATION NOTE  
References  
[1] Fairchild Datasheet FAN9612, Interleaved Dual BCM, PFC Controller  
[2] Fairchild Datasheet FL7930 Critical Conduction Mode PFC Controller  
[3] Fairchild Application Note AN-6027, Design of Power Factor Correction Circuit Using FAN7530  
[4] Fairchild Application Note AN-8035, Design of Power Factor Correction Circuit Using FAN7930  
[5] Fairchild Application Note AN-6086, Design Consideration for Interleaved BCM PFC using FAN9612  
[6] Robert W. Erikson, Dragan Maksimovic, Fundamentals of Power Electronics, Second Edition, Kluwer Academic  
Publishers, 2001.  
Related Datasheets  
FL7930 — Critical Conduction Mode PFC Controller  
FAN9611 / FAN9612 — Interleaved Dual BCM PFC Controllers  
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode  
PN2222A/MMBT2222A/PZT2222A NPN General Purpose Amplifier  
FDP22N50N — 600V N-Channel MOSFET, UniFETTM  
FFPF08H60S — 8A, 600V Hyperfast Rectifier  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE  
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS  
WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b)  
support or sustain life, or (c) whose failure to perform when  
properly used in accordance with instructions for use provided  
in the labeling, can be reasonably expected to result in  
significant injury to the user.  
2. A critical component is any component of a life support device  
or system whose failure to perform can be reasonably  
expected to cause the failure of the life support device or  
system, or to affect its safety or effectiveness.  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 3/23/11  
www.fairchildsemi.com  
22  

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