AN-9738 [FAIRCHILD]

Design Guideline on 150W Power Supply for LED Street Lighting Design Using FL7930B and FAN7621S; 对150W电源设计指南LED路灯设计中的应用FL7930B和FAN7621S
AN-9738
型号: AN-9738
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Design Guideline on 150W Power Supply for LED Street Lighting Design Using FL7930B and FAN7621S
对150W电源设计指南LED路灯设计中的应用FL7930B和FAN7621S

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www.fairchildsemi.com  
AN-9738  
Design Guideline on 150W Power Supply for LED  
Street Lighting Design Using FL7930B and FAN7621S  
Introduction  
This application note describes a 150W rating design  
guideline for LED street lighting. The application design  
consists of CRM PFC and LLC SRC with high power factor  
and high power conversion efficiency using FL7930B and  
FAN7621S. To verify the validity of the application board  
and scheme, a demonstration board 150W (103V/1.46A)  
ACꢀDC converter was implemented and its results are  
presented in this application note. In CRM active PFC, the  
most popular topology is a boost converter. This is because  
boost converters can have continuous input current that can  
be manipulated with peak current mode control techniques  
to force peak current to track changes in line voltage. The  
FAN7930B is an active Power Factor Correction (PFC)  
controller for boost PFC applications that operate in critical  
conduction mode (CRM). Since it was first introduced in  
early 1990s, LLCꢀSRC (series resonant converter) has  
became a most popular topology because of its outstanding  
performance in areas such as the output regulation of  
switching frequency, ZVS capability for entire load range,  
low turnꢀoff current, small resonant components using the  
integrated transformer, zero current switching (ZCS), and no  
reverse recovery loss on secondary rectifier. Figure 1 shows  
the typical application circuit, with the CRM PFC converter  
in the front end and the LLC SRC DCꢀDC converter in the  
back end. FL7930B and FAN7621S achieve high efficiency  
with medium power for 150W rating applications where  
CRM and LLC SRC operation with a twoꢀstage shows best  
performance. CRM boost PFC converters can achieve better  
efficiency with light and medium power rating than  
Continuous Conduction Mode (CCM) boost PFC  
converters. These benefits result from the elimination of the  
reverseꢀrecovery losses of the boost diode and ZeroꢀCurrent  
Switching (ZCS). The LLC SRC DCꢀDC converter achieves  
higher efficiency than the conventional hard switching  
converter. The FL7930B provides a controlled onꢀtime to  
regulate the output DC voltage and achieves natural power  
factor correction. The FAN7621S includes a highꢀside gate  
driver circuit, accurate currentꢀcontrolled oscillator,  
frequency ꢀlimit circuit, softꢀstart, and builtꢀin protections.  
The highꢀside gate drive circuit has a commonꢀmode noise  
cancellation capability, which guarantees stable operation  
with excellent noise immunity. Using Zero Voltage  
Switching (ZVS) dramatically reduces switching losses and  
significantly improves efficiency. ZVS also reduces  
switching noise noticeably, which allows a smallꢀsized  
Electromagnetic Interference (EMI) filter.  
Figure 1. Typical Application Circuit  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
ANꢀ9738  
APPLICATION NOTE  
1. Basic Operation of BCM PFC Pre-Regulator  
The most widely used operation modes for the boost  
converter are Continuous Conduction Mode (CCM) and  
Boundary Conduction Mode (BCM). These two descriptive  
names refer to the current flowing through the energy  
storage inductor of the boost converter, as depicted in  
Figure 2. As the names indicate, the inductor current in  
CCM is continuous; while in BCM, the new switching  
period is initiated when the inductor current returns to zero,  
which is at the boundary of continuous conduction and  
discontinuous conduction operations. Even though the BCM  
operation has higher RMS current in the inductor and  
switching devices, it allows better switching condition for  
the MOSFET and the diode. As shown in Figure 2, the  
diode reverse recovery is eliminated and a fastꢀrecovery  
diode is not needed. The MOSFET is also turned on with  
zero current, which reduces the switching loss.  
A side effect of BCM is that the boost converter runs with  
variable switching frequency that depends primarily on the  
selected output voltage, the instantaneous value of the input  
voltage, the boost inductor value, and the output power  
delivered to the load. The operating frequency changes as  
the input current follows the sinusoidal input voltage  
waveform, as shown in Figure 3. The lowest frequency  
occurs at the peak of sinusoidal line voltage.  
ID  
IL  
L
VOUT  
VLINE  
IDS  
VIN  
Line Filter  
Figure 3. Operation Waveforms of BCM PFC  
The voltageꢀsecond balance equation for the inductor is:  
(1)  
VIN (t )tON  
=
(
VOUT VIN (t ) tOFF  
)
where VIN(t) is the rectified line voltage and VOUT is the  
output voltage.  
The switching frequency of BCM boost PFC converter is:  
1
1
VOUT VIN (t )  
fSW  
=
=
tON + tOFF tON  
VOUT  
(2)  
VOUT VIN ,PK sin  
(2  
π ⋅ fLINE t  
)
1
tON  
=
VOUT  
Figure 2. CCM vs. BCM Control  
where VIN,PK is the amplitude of the line voltage and fLINE is  
the line frequency.  
The fundamental idea of BCM PFC is that the inductor  
current starts from zero in each switching period, as shown  
in Figure 3. When the power transistor of the boost  
converter is turned on for a fixed time, the peak inductor  
current is proportional to the input voltage. Since the current  
waveform is triangular; the average value in each switching  
period is proportional to the input voltage. In a sinusoidal  
input voltage, the input current of the converter follows the  
input voltage waveform with very high accuracy and draws  
a sinusoidal input current from the source. This behavior  
makes the boost converter in BCM operation an ideal  
candidate for power factor correction.  
Figure 4 shows how the MOSFET onꢀtime and switching  
frequency change as output power decreases. When the load  
decreases, as shown in the right side of Figure 4, the peak  
inductor current diminishes with reduced MOSFET onꢀtime  
and, therefore, the switching frequency increases. Since this  
can cause severe switching losses at lightꢀload condition and  
tooꢀhigh switching frequency operation may occur at  
startup, the maximum switching frequency of FL7930B is  
limited to 300kHz.  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
2
ANꢀ9738  
APPLICATION NOTE  
IL  
Average of input  
current  
VGS  
Figure 5. Half-Bridge, LC Series Resonant Converter  
fSW  
To overcome the limitation of series resonant converters, the  
LLC resonant converter has been proposed. The LLC  
resonant converter is a modified LC series resonant  
converter implemented by placing a shunt inductor across  
the transformer primary winding, as depicted in Figure 6.  
When this topology was first presented, it did not receive  
much attention due to the counterintuitive concept that  
increasing the circulating current in the primary side with a  
shunt inductor can be beneficial to circuit operation.  
However, it can be very effective in improving efficiency  
for highꢀinput voltage applications where the switching loss  
is more dominant than the conduction loss.  
t
Figure 4. Frequency Variation of BCM PFC  
Since the design of the filter and inductor for a BCM PFC  
converter with variable switching frequency should be at  
minimum frequency condition, it is worthwhile to examine  
how the minimum frequency of BCM PFC converter  
changes with operating conditions.  
In most practical designs, this shunt inductor is realized  
using the magnetizing inductance of the transformer. The  
circuit diagram of LLC resonant converter looks much the  
same as the LC series resonant converter: the only  
difference is the value of the magnetizing inductor. While  
the series resonant converter has a magnetizing inductance  
larger than the LC series resonant inductor (Lr), the  
magnetizing inductance in an LLC resonant converter is just  
3~8 times Lr, which is usually implemented by introducing  
an air gap in the transformer.  
2. Consideration of LLC Resonant  
Converter  
The attempt to obtain everꢀincreasing power density in  
switchedꢀmode power supplies has been limited by the size  
of passive components. Operation at higher frequencies  
considerably reduces the size of passive components, such  
as transformers and filters; however, switching losses have  
been an obstacle to highꢀfrequency operation. To reduce  
switching losses and allow highꢀfrequency operation,  
resonant switching techniques have been developed. These  
techniques process power in a sinusoidal manner and the  
switching devices are softly commutated. Therefore, the  
switching losses and noise can be dramatically reduced.  
Figure 6. Half-Bridge LLC Resonant Converter  
Among various kinds of resonant converters, the simplest and  
most popular is the LC series resonant converter, where the  
rectifierꢀload network is placed in series with the LC resonant  
network, as depicted in Figure 5. In this configuration, the  
resonant network and the load act as a voltage divider. By  
changing the frequency of driving voltage Vd, the impedance  
of the resonant network changes. The input voltage is split  
between this impedance and the reflected load. Since it is a  
voltage divider, the DC gain of a LC series resonant converter  
is always <1. At lightꢀload condition, the impedance of the  
load is large compared to the impedance of the resonant  
network; all the input voltage is imposed on the load. This  
makes it difficult to regulate the output at light load.  
Theoretically, frequency should be infinite to regulate the  
output at no load.  
An LLC resonant converter has many advantages over a  
series resonant converter. It can regulate the output over  
wide line and load variations with a relatively small  
variation of switching frequency. It can achieve zero voltage  
switching (ZVS) over the entire operating range. All  
essential parasitic elements; including the junction  
capacitances of all semiconductor devices, the leakage  
inductance, and magnetizing inductance of the transformer;  
are utilized to achieve soft switching.  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
3
ANꢀ9738  
APPLICATION NOTE  
This application note presents design considerations for an  
LLC resonant halfꢀbridge converter employing Fairchild’s  
FAN7621S. It includes explanation of the LLC resonant  
converter operation principles, designing the transformer  
and resonant network, and selecting the components. The  
stepꢀbyꢀstep design procedure, explained with a design  
example, helps design the LLC resonant converter. 0 shows  
a simplified schematic of a halfꢀbridge LLC resonant  
converter, where Lm is the magnetizing inductance that acts  
as a shunt inductor, Lr is the series resonant inductor, and Cr  
is the resonant capacitor. Figure 8 illustrates the typical  
waveforms of the LLC resonant converter. It is assumed that  
the operation frequency is the same as the resonance  
frequency, determined by the resonance between Lr and Cr.  
Since the magnetizing inductor is relatively small, a  
considerable amount of magnetizing current (Im) exists,  
which freewheels in the primary side without being  
involved in the power transfer. The primaryꢀside current (Ip)  
is the sum of the magnetizing current and the secondaryꢀside  
current referred to the primary.  
Figure 7. Schematic of Half-Bridge LLC  
Resonant Converter  
Ip  
Im  
In general, the LLC resonant topology consists of the three  
stages shown in 0; squareꢀwave generator, resonant  
network, and rectifier network.  
IDS1  
The squareꢀwave generator produces a squareꢀwave  
voltage, Vd, by driving switches Q1 and Q2 alternately  
with 50% duty cycle for each switch. A small dead time  
is usually introduced between the consecutive  
transitions. The squareꢀwave generator stage can be  
built as a fullꢀbridge or halfꢀbridge type.  
ID  
VIN  
Vd  
The resonant network consists of a capacitor, leakage  
inductances, and the magnetizing inductance of the  
transformer. The resonant network filters the higher  
harmonic currents. Essentially, only sinusoidal current  
is allowed to flow through the resonant network even  
though a squareꢀwave voltage is applied. The current  
(Ip) lags the voltage applied to the resonant network  
(that is, the fundamental component of the squareꢀwave  
voltage (Vd) applied to the halfꢀbridge totem pole),  
which allows the MOSFETs to be turned on with zero  
voltage. As shown in Figure 8, the MOSFET turns on  
while the voltage across the MOSFET is zero by  
flowing current through the antiꢀparallel diode.  
Vgs1  
Vgs2  
Figure 8. Typical Waveforms of Half-Bridge LLC  
Resonant Converter  
The filtering action of the resonant network allows the use  
of the fundamental approximation to obtain the voltage gain  
of the resonant converter, which assumes that only the  
fundamental component of the squareꢀwave voltage input to  
the resonant network contributes to the power transfer to the  
output. Because the rectifier circuit in the secondary side  
acts as an impedance transformer, the equivalent load  
resistance is different from actual load resistance. Figure 9  
shows how this equivalent load resistance is derived. The  
primaryꢀside circuit is replaced by a sinusoidal current  
source, Iac, and a square wave of voltage, VRI, appears at the  
input to the rectifier. Since the average of |Iac| is the output  
current, Io, Iac, is obtained as:  
The rectifier network produces DC voltage by  
rectifying the AC current with rectifier diodes and a  
capacitor. The rectifier network can be implemented as  
a fullꢀwave bridge or a centerꢀtapped configuration with  
capacitive output filter.  
π Io  
2
Iac  
=
sin(ωt)  
(3)  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
4
ANꢀ9738  
APPLICATION NOTE  
and VRI is given as:  
Cr  
Lr  
Vd  
+
+
VO  
+
VRI = +Vo if sin(  
ω
t) > 0  
VIN  
(4)  
(5)  
VRI  
Lm  
VRI = −Vo if sin(  
ω
t) < 0  
Ro  
-
-
-
where Vo is the output voltage.  
Np:Ns  
The fundamental component of VRI is given as:  
8n2  
π 2  
Rac  
=
Ro  
n=Np/Ns  
4Vo  
F
VRI  
=
sin(ωt)  
π
F
Cr  
Lr  
VRo  
Since harmonic components of VRI are not involved in the  
power transfer, AC equivalent load resistance can be  
calculated by dividing VRIF by Iac as:  
F
Rac  
Vd  
F
(nVRI  
)
Lm  
F
Figure 10. AC Equivalent Circuit for LLC  
Resonant Converter  
VRI  
Iac  
8 Vo  
8
Rac =  
=
=
Ro  
(6)  
π 2 Io π 2  
With the equivalent load resistance obtained in Equation 7,  
the characteristics of the LLC resonant converter can be  
derived. Using the AC equivalent circuit of Figure 10, the  
voltage gain, M, is obtained as:  
Considering the transformer turns ratio (n=Np/Ns), the  
equivalent load resistance shown in the primary side is  
obtained as:  
8n2  
π 2  
4n V  
π
o sin(  
ωt)  
F
F
VRO  
n VRI  
Vd  
2n Vo  
Vin  
(7)  
Rac =  
Ro  
M =  
=
=
=
F
F
4 V  
Vd  
in sin(  
ωt)  
π
2
By using the equivalent load resistance, the AC equivalent  
circuit is obtained, as illustrated in Figure 10, where VdF and  
VROF are the fundamental components of the driving voltage,  
Vd and reflected output voltage, VRO (nVRI), respectively.  
(8)  
ω
ωo  
(
)2 (m 1)  
=
ω2  
ω
ω2  
(
1) + j  
(
1)(m 1)Q  
2
2
ωp  
ωo ωo  
pk  
Iac  
where:  
Lp = Lm + Lr , Rac  
8n2  
Lp  
Ro , m =  
Lr  
=
=
π 2  
Lr  
1
1
1
Q =  
,
ωo  
, ωp =  
Cr Rac  
LrCr  
LpCr  
As can be seen in Equation (8), there are two resonant  
frequencies. One is determined by Lr and Cr, while the other  
is determined by Lp and Cr.  
Equation (8) shows the gain is unity at resonant frequency  
(ωo), regardless of the load variation, which is given as:  
π
=
I  
2
Iac  
=
o sin(wt)  
2
(m 1) ωp  
2n Vo  
M =  
=
=1 atω = ωo  
(9)  
2
2
V
ωo ωp  
in  
4V  
F
VRI  
o sin(wt)  
The gain of Equation (8) is plotted in Figure 11 for different  
Q values with m=3, fo=100kHz, and fp=57kHz. As observed  
in Figure 11, the LLC resonant converter shows gain  
characteristics that are almost independent of the load when  
the switching frequency is around the resonant frequency, fo.  
This is a distinct advantage of LLCꢀtype resonant converter  
over the conventional series resonant converter. Therefore,  
it is natural to operate the converter around the resonant  
frequency to minimize the switching frequency variation.  
π
Figure 9. Derivation of Equivalent Load Resistance Rac  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
5
ANꢀ9738  
APPLICATION NOTE  
The operating range of the LLC resonant converter is  
limited by the peak gain (attainable maximum gain), which  
is indicated with ‘Q’ in Figure 11. Note that the peak  
voltage gain does not occur at fo or fp. The peak gain  
frequency, where the peak gain is obtained, exists between  
fp and fo, as shown in Figure 11. As Q decreases (as load  
decreases), the peak gain frequency moves to fp and higher  
peak gain is obtained. Meanwhile, as Q increases (as load  
increases), the peak gain frequency moves to fo and the peak  
gain drops; the fullꢀload condition should be worst case for  
the resonant network design.  
be divided into two categories; rising current when the  
MOSFET is on and output diode current when the MOSFET  
is off, as shown in Figure 12.  
1
1
fo  
=
fp  
=
2
π LrCr  
2π  
LpCr  
Figure 12. Inductor and Input Current  
Lr / Cr  
Q =  
Because switching frequency is much higher than line  
frequency, input current can be assumed to be constant  
during a switching period, as shown in Figure 133.  
Rac  
M@ f =1  
o
Figure 11. Typical Gain Curves of LLC Resonant  
Converter (m=3)  
3. Design Considerations  
Figure 13. Inductor and Input Current  
This design procedure uses the schematic in Figure 1 as a  
reference. A 150W street lighting application with universal  
input range is selected as a design example. The design  
specifications are:  
With the estimated efficiency, Figure 12 and Figure 13,  
inductor current peak (IL,PK), maximum input current  
(IIN,MAX), and input Root Mean Square (RMS) current  
(IIN,MAXRMS) are given as:  
Line Voltage Range: 85VA~277VAC (50Hz)  
Output of Converter: 103V/1.46A (150W)  
PFC Output Voltage: 430V  
4
POUT  
I L ,PK  
=
[ A ]  
(10)  
η ⋅  
2
VLINE ,MIN  
IIN,MAX = IL,PK  
/
2
[ A]  
2 [ A]  
(11)  
(12)  
Overall Efficiency: 90% (PFC: 95%, LLC: 95%)  
IIN,MAXRMS = IIN,MAX  
/
3.1 PFC Section  
STEP-1] Define System Specification  
(Design Example) Input voltage range is universal input,  
output load is 465mA, and estimated efficiency is selected  
as 0.9.  
[
Line Frequency Range (VLINE,MIN and VLINE,MAX  
Line Frequency (fLINE  
OutputꢀVoltage (VOUT  
Output Load Current (IOUT  
Output Power (POUT =VOUT × IOUT  
Estimated Efficiency (  
)
)
)
VLINE ,MIN = 85VAC , VLINE,MAX = 277VAC  
fLINE = 50Hz  
)
VOUT = 430V , IOUT = 465mA  
)
η
= 0.9  
η
)
4P  
4430V 0.465A  
0.92 85  
OUT  
To calculate the maximum input power, it is necessary to  
estimate the power conversion efficiency. At universal input  
range, efficiency is recommended at 0.9; 0.93~0.95 is  
recommended when input voltage is high. When input  
voltage is set at the minimum, input current becomes the  
maximum to deliver the same power compared at high line.  
Maximum boost inductor current can be detected at the  
minimum line voltage and at its peak. Inductor current can  
IL,PK  
=
=
= 7.392A  
η
=
2 VLINE,MIN  
IL,PK  
7.392A  
IIN,MAX  
=
= 3.696A  
2
2
IIN,MAX  
3.696A  
IIN,MAXRMS  
=
=
= 2.613A  
2
2
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
6
ANꢀ9738  
APPLICATION NOTE  
When selecting wire diameter and strands; current density,  
window area (AW, refer to Figure 14) of the selected core,  
and fill factor need to be considered. The winding sequence  
of the boost inductor is relatively simple compared to a DCꢀ  
DC converter, so fill factor can be assumed about 0.2~0.3.  
[STEP-2] Boost Inductor Design  
The boost inductor value is determined by the output power  
and the minimum switching frequency. The minimum  
switching frequency must be higher than the maximum  
audible frequency band of 20kHz. Minimum frequency near  
20kHz can decrease switching loss with the cost of  
increased inductor size and line filter size. Tooꢀhigh  
minimum frequency may increase the switching loss and  
make the system respond to noise. Selecting in the range of  
about 30~60kHz is a common choice; 40~50kHz is  
recommended with FL7930B.  
Layers cause the skin effect and proximity effect in the coil,  
so real current density may be higher than expected.  
The minimum switching frequency may appear at minimum  
input voltage or maximum input voltage, depending on the  
output voltage level. When PFC output voltage is less than  
430V, minimum switching appears at the maximum input  
voltage (see Fairchild application note ANꢀ6086). Inductance  
is obtained using the minimum switching frequency:  
2
η⋅  
(
2
VLINE  
)
L =  
[ H ]  
2
VLINE  
(13)  
4
fSW,MIN POUT  
1
+
Figure 14. Typical B-H Curves of Ferrite Core  
VOUT  
2VLINE  
where L is boost inductance and fSW,MIN is the minimum  
switching frequency.  
The maximum onꢀtime needed to carry peak inductor  
current is calculated as:  
I L,PK  
tON,MAX = L ⋅  
[s]  
(14)  
2 VLINE, MIN  
Once inductance and the maximum inductor current are  
calculated, the turn number of the boost inductor should be  
determined considering the core saturation. The minimum  
number of turns is given as:  
Figure 15. A and AW  
e
IL,PK L[ H ]  
Ae [ mm2 ] ⋅ ꢀB  
(Design Example) Since the output voltage is 430V, the  
minimum frequency occurs at highꢀline (277VAC) and fullꢀ  
load condition. Assuming the efficiency is 90% and  
selecting the minimum frequency as 50kHz, the inductor  
value is obtained as:  
NBOOST  
[Turns ]  
(15)  
where Ae is the crossꢀsectional area of the core and B is  
the maximum flux swing of the core in Tesla. B should be  
set below the saturation flux density.  
2
η⋅  
fSW ,MIN P  
(
2
VLINE  
)
L =  
Figure 14 shows the typical BꢀH characteristics of a ferrite  
core from TDK (PC45). Since the saturation flux density  
(B) decreases as the temperature increases, the highꢀ  
temperature characteristics should be considered.  
2
VLINE  
4
1
+
OUT  
VOUT  
2
VLINE  
2
0
.
9
(
2
×
277  
)
=
= 307.2[H ]  
2
277  
4
50  
103  
200  
1
+
RMS inductor current (IL,RMS) and current density of the coil  
(IL,DENSITY) can be given as:  
430  
2
277  
Assuming EER3019N core (PLꢀ7, Ae=137mm2) is used and  
setting B as 0.3T, the primary winding should be:  
IL,PK  
IL,RMS  
=
[ A]  
IL,RMS  
(16)  
(17)  
6
IL,PK L[ H ]  
Ae [ mm2 ] ⋅ ꢀB  
7.392 307  
137 0.3  
NBOOST  
=
= 55[T ]  
IL,DENSITY  
=
[ A / mm2  
]
d
2  
wire  
The number of turns (NBOOST) of the boost inductor is  
determined as 55 turns.  
π⋅  
Nwire  
2
where dWIRE is the diameter of winding wire and NWIRE is  
the number of strands of winding wire.  
When 0.10mm diameter and 50ꢀstrand wire is used, RMS  
current of inductor coil and current density are:  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
7
ANꢀ9738  
APPLICATION NOTE  
IL,PK  
Auxiliary winding must give enough energy to trigger ZCD  
threshold to detect zero current. Minimum auxiliary winding  
turns are given as:  
7
.
392  
IL,RMS  
=
=
=
3.017 [ A]  
6
6
IL,RMS  
3.017  
IL,DENSITY  
=
=
=7. ]  
68 [ A/ mm2  
2  
1.5  
V NBOOST  
2
π⋅  
(0.1  
/
2
)
50  
d
wire  
π⋅  
Nwire  
NAUX  
[Turns]  
2
(18)  
VOUT  
2VLINE,MAX  
where 1.5V is the positive threshold of the ZCD pin.  
[STEP-3] Inductor Auxiliary Winding Design  
To guarantee stable operation, it is recommended to add 2~3  
turns to the auxiliary winding turns calculated in Equation  
(18). However, too many auxiliary winding turns raise the  
negative clamping loss at high line and positive clamping  
loss at low line.  
Figure 16 shows the application circuit of the nearby ZCD  
pin from auxiliary winding.  
(Design Example) 55 turns are selected as boost inductor  
turns and auxiliary winding turns are calculated as:  
1
.
5
V NBOOST  
VLINE,MAX 4302 277  
1.5 55  
NAUX  
=
=2.15[Turns]  
VOUT  
2
Choice should be around 4~5 turns after adding 2~3 turns.  
[STEP-4] ZCD Circuit Design  
Figure 16. Application Circuit of ZCD Pin  
If a transition time when VAUXILIARY drops from 1.4V to 0V  
is ignored from Figure 17, the necessary additional delay by  
the external resistor and capacitor is one quarter of the  
resonant period. The time constant made by ZCD resistor  
and capacitor should be the same as one quarter of the  
resonant period:  
The first role of ZCD winding is detecting the zeroꢀcurrent  
point of the boost inductor. Once the boost inductor current  
becomes zero, the effective capacitance (Ceff) at the  
MOSFET drain pin and the boost inductor resonate  
together. To minimize the constant turnꢀon time  
deterioration and turnꢀon loss, the gate is turned on again  
when the drain source voltage of the MOSFET (VDS)  
reaches the valley point shown in Figure 17. When input  
voltage is lower than half of the boosted output voltage,  
Zero Voltage Switching (ZVS) is possible if MOSFET turnꢀ  
on is triggered at valley point.  
2
π Ceff L  
(19)  
RZCD CZCD  
=
4
where Ceff is the effective capacitance at the MOSFET drain  
pin; CZCD is the external capacitance at the ZCD pin; and  
RZCD is the external resistance at the ZCD pin.  
The second role of RZCD is the current limit of the internal  
negative clamp circuit when auxiliary voltage drops to  
negative due to MOSFET turn on. ZCD voltage is clamped  
0.65V and minimum RZCD can be given as:  
NAUX  
2
VLINE,MAX  
mA  
0.65V  
NBOOST  
(20)  
RZCD  
[]  
3
where 3mA is the clamping capability of the ZCD pin.  
The calculation result of Equation (20) is normally higher  
than 15k. If 20kis assumed as RZCD, calculated CZCD  
from Equation (19) is around 10pF when the other  
components are assumed as conventional values used in the  
field. Because most IC pins have several pF of parasitic  
capacitance, CZCD can be eliminated when RZCD is higher  
than 30k. However, a small capacitor would be helpful  
when auxiliary winding suffers from operating noise.  
The PFC control loop has two conflicting goals: output  
voltage regulation and making the input current shape the  
same as input voltage. If the control loop reacts to regulate  
output voltage smoothly, as shown in Figure 18, control  
www.fairchildsemi.com  
Figure 17. ZCD Detection Waveforms  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
8
ANꢀ9738  
APPLICATION NOTE  
voltage varies widely with the input voltage variation. Input  
current acts to the control loop and sinusoidal input current  
shape cannot be attained. This is the reason control response  
of most PFC topologies is very slow and turnꢀon time over  
AC period is kept constant. This is also the reason output  
voltage ripple is made by input and output power  
relationship, not by controlꢀloop performance.  
Figure 18. Input Current Deterioration by Fast Control  
Figure 20. Inductor Current at AC Voltage Zero  
If onꢀtime is controlled constantly over one AC period, the  
inductor current peak follows AC input voltage shape and  
achieves good power factor. Offꢀtime is basically inductor  
current reset time due to Boundary Mode and is determined  
by the input and output voltage difference. When input  
voltage is at its peak, the voltage difference between input  
and output voltage is small and long turnꢀoff time is  
necessary. When input voltage is near zero, turnꢀoff time is  
short, as shown in Figure 19 and Figure 20. Though  
inductor current drops to zero, the minor delay is explained  
above. The delay can be assumed as fixed when AC is at  
line peak and zero. Near AC line peak, the inductor current  
decreasing slope is slow and inductor current slope is also  
slow during the ZCD delay. The amount of negative current  
is not much higher than the inductor current peak. Near the  
AC line zero, inductor current decreasing slope is very high  
and the amount of negative current is higher than positive  
inductor current peak because input voltage is almost zero.  
Negative inductor current creates zeroꢀcurrent distortion and  
degrades the power factor. Improve this by extending turnꢀ  
on time at the AC line input near the zero cross.  
Negative auxiliary winding voltage, when the MOSFET is  
turned on, is linearly proportional to the input voltage.  
Sourcing current generated by the internal negative  
clamping circuit is also proportional to sinusoidal input  
voltage. That current is detected internally and added to the  
internal sawtooth generator, as shown in Figure 21.  
Figure 21. ZCD Current and Sawtooth Generator  
When the AC input voltage is almost zero, no negative  
current is generated from inside, but sourcing current when  
input voltage is high is used to raise the sawtooth generator  
slope and turnꢀon time is shorter. As a result, turnꢀon time  
when AC voltage is zero is longer compared to AC voltage,  
in peaks shown in Figure 22.  
Figure 19. Inductor Current at AC Voltage Peak  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
9
ANꢀ9738  
APPLICATION NOTE  
control voltage decreases rapidly. For example, if input  
voltage doubles, control voltage drops to one quarter.  
Making control voltage maximum when input voltage is low  
and at full load is necessary to use the whole control range  
for the rest of the input voltage conditions. Matching  
maximum turnꢀon time needed at low line is calculated in  
Equation (14) and turnꢀon time adjustment by RZCD  
guarantees use of the full control range. RZCD for control  
range optimization is obtained as:  
2
0
VLINE,MIN N AUX  
.469 mANBOOST  
28 s  
tON ,MAX tON ,MAX  
RZCD  
[]  
(21)  
1
Figure 22. THD Improvement  
The current that comes from the ZCD pin, when auxiliary  
voltage is negative, depends on RZCD. The second role of  
RZCD is also related to improving the Total Harmonic  
Distortion (THD).  
where:  
tON,MAX is calculated by Equation (14)  
tON,MAX1 is maximum onꢀtime programming 1;  
NBOOST is the winding turns of boost inductor; and  
NAUX is the auxiliary winding turns.  
;
The third role of RZCD is making the maximum turnꢀon time  
adjustment. Depending on sourcing current from the ZCD  
pin, the maximum onꢀtime varies as in Figure 23.  
RZCD calculated by Equation (20) is normally lower than the  
value calculated in Equation (21). To guarantee the needed  
turn onꢀtime for the boost inductor to deliver rated power,  
the RZCD from Equation (20) is normally not suitable. RZCD  
should be higher than the result of Equation (21) when  
output voltage drops as a result of low line voltage.  
When input voltage is high and load is light, not much input  
current is needed and control voltage of VCOMP touches  
switching stop level, such as if FL7930B is 1V. However, in  
some applications, a PFC block is needed to operate  
normally at light load. To compensate control range  
correctly, input voltage sensing is necessary, such as with  
Fairchild’s interleaved PFC controller FAN9612, or special  
care on sawtooth generator is necessary. To guarantee  
enough control range at high line, clamping output voltage  
lower than rated on the minimum input condition can help.  
Figure 23. Maximum On-Time Variation vs. IZCD  
With the aid of IZCD, an internal sawtooth generator slope is  
changed and turnꢀon time varies as shown in Figure 24.  
(Design Example) Minimum RZCD for clamping capability  
is calculated as:  
NAUX  
2
VLINE,MAX 0.65V  
NBOOST  
RZCD  
3
mA  
5
34  
2
277  
0.65  
V
=
=18.9 kꢂ  
3
mA  
Minimum RZCD for control range is calculated as:  
2
VLINE,MIN N AUX  
.469 mANBOOST  
28 s  
tON ,MAX tON,MAX  
RZCD  
0
1
28 s 85  
42 s10.9 s 0.469 mA55  
2
5  
=
= 20.97 kꢂ  
Figure 24. Internal Sawtooth Wave Slope Variation  
A choice close to the value calculated by the control range is  
recommended. 39kis chosen in this case.  
RZCD also influences control range. Because FL7930B  
doesn’t detect input voltage, voltageꢀmode control value is  
determined by the turnꢀon time to deliver the needed current  
to boost output voltage. When input voltage increases,  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
10  
ANꢀ9738  
APPLICATION NOTE  
[STEP-5] Output Capacitor Selection  
(Design Example) With the ripple specification of 8Vpꢀp  
,
the capacitor should be:  
The output voltage ripple should be considered when  
selecting the output capacitor. Figure 25 shows the line  
frequency ripple on the output voltage. With a given  
specification of output ripple, the condition for the output  
capacitor is obtained as:  
IOUT  
0
π⋅50  
.
465  
CO  
=
=185 [F ]  
2
π⋅ fLINE VOUT,ripple  
2
8  
Since minimum allowable output voltage during one cycle  
line (20ms) dropꢀouts is 330V, the capacitor should be:  
2
× POUT tHOLD  
IOUT  
CO  
COUT  
[ f ]  
(22)  
2
2
(
VOUT  
0
.
5
⋅ ꢀVOUT ,ripple  
)
VOUT ,MIN  
2
π ⋅ fLINE ⋅ ꢀVOUT ,RIPPLE  
3
2
200  
20 ×10  
where VOUT,RIPPLE is the peakꢀtoꢀpeak output voltage ripple  
specification.  
=
= 110 [ F ]  
2
2
(430  
0
.
5
8
)
330  
To meet both conditions, the output capacitor must be  
larger than 140F. A 240F capacitor is selected for the  
output capacitor.  
The output voltage ripple caused by the ESR of the  
electrolytic capacitor is not as serious as other power  
converters because output voltage is high and load current is  
small. Since too much ripple on the output voltage may  
cause premature OVP during normal operation, the peakꢀtoꢀ  
peak ripple specification should be smaller than 15% of the  
nominal output voltage.  
The voltage stress of selected capacitor is calculated as:  
2.730  
2.500  
VOVP  
,MAX VOUT  
VST,COUT  
=
=
430 =469.5 [V ]  
VREF  
The holdꢀup time should also be considered when  
determining the output capacitor as:  
[STEP-6] MOSFET and DIODE Selection  
Selecting the MOSFET and diode requires extensive  
knowledge and calculation regarding loss mechanisms and  
gets more complicated if proper selection of a heatsink is  
added. Sometimes the loss calculation itself is based on  
assumptions that may be far from reality. Refer to industry  
resources regarding these topics. This note shows the  
voltage rating and switching loss calculations based on a  
linear approximation.  
2
POUT tHOLD  
COUT  
[ f ]  
(23)  
2
2
(
VOUT  
0
.
5
VOUT,RIPPLE  
)
VOUT,MIN  
where tHOLD is the required holdꢀup time and VOUT,MIN is the  
minimum output voltage during holdꢀup time.  
I
diode  
The voltage stress of the MOSFET is obtained as:  
VOV  
P,MAX  
VST ,Q  
=
VOUT +VDROP,DOUT [V ]  
(25)  
VREF  
where VDROP,DOUT is the maximum forwardꢀvoltage drop of  
output diode.  
I
diode,ave  
I
=IOUT(1ꢀcos(4p.fL.t))  
diode,ave  
After the MOSFET is turned off, the output diode turns on  
and a large output electrolytic capacitance is shown at the  
drain pin; thus a drain voltage clamping circuit that is  
necessary on other topologies is not necessary in PFC.  
During the turnꢀoff transient, boost inductor current changes  
the path from MOSFET to output diode. Before the output  
diode turns on; a minor voltage peak can be shown at drain  
pin, which is proportional to MOSFET turnꢀoff speed.  
I
OUT  
I
OUT  
2p.fL.COUT  
V
=
OUT,ripple  
V
OUT  
t
MOSFET loss can be divided into three parts: conduction  
loss, turnꢀoff loss, and discharge loss. Boundary mode  
guarantees Zero Current Switching (ZCS) of the MOSFET  
when turned on, so turnꢀon loss is negligible.  
Figure 25. Output Voltage Ripple  
The voltage rating of capacitor can be obtained as:  
VOV  
P,MAX  
VST ,COUT  
=
VOUT [V ]  
The MOSFET RMS current and conduction loss are  
obtained as:  
(24)  
VREF  
where VOVP,MAX and VREF are the maximum tolerance  
specifications of overꢀvoltage protection triggering voltage  
and reference voltage at error amplifier, respectively.  
4 2 VLINE  
1
6
(26)  
(27)  
IQ,RMS = IL,PK  
[ A]  
9
π⋅VOUT  
2
PQ,CON  
=
(
IQ,RMS  
)
RDS,ON [W ]  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
11  
ANꢀ9738  
APPLICATION NOTE  
The average diode current and power loss are obtained as:  
IOUT  
where IQ,RMS is the RMS value of MOSFET current,  
PQ,CON is the conduction loss caused by MOSFET current,  
and RDS,ON is the ON resistance of the MOSFET.  
IDOUT,AVE  
=
[ A]  
(31)  
η
On resistance is described as “static on resistance” and  
varies depending on junction temperature. That variation  
information is normally supplied as a graph in the datasheet  
and may vary by manufacturer. When calculating  
conduction loss, generally multiply three by the RDS,ON for  
more accurate estimation.  
PDOUT=VDROP,DOUTIDOUT,AVE [W]  
(32)  
where VDROP,DOUT is the forward voltage drop of diode.  
(Design Example) Internal reference at the feedback pin is  
2.5V and maximum tolerance of OVP trigger voltage is  
2.730V. If Fairchild’s FDPF17N60NT MOSFET and  
FFPF08H60S diode are selected, VD,FOR is 2.1V at 8A,  
25°C, maximum RDS,ON is 0.34at drain current is 17A,  
and maximum COSS is 32pF at drainꢀsource voltage is 480V.  
The precise turnꢀoff loss calculation is difficult because of  
the nonlinear characteristics of MOSFET turnꢀoff. When  
piecewise linear current and voltage of MOSFET during  
turnꢀoff and inductive load are assumed, MOSFET turnꢀoff  
loss is obtained as:  
VOV  
MAX VOUT +VDROP,DIODE  
1
2
P,  
VST,Q  
=
P
=
VOUT IL tOFF fSW [W]  
(28)  
Q,SWOFF  
VREF  
2.73  
2.50  
=
430  
+
2
.
1
=
471  
.
6
[V ]  
where tOFF is the turnꢀoff time and fSW is the switching  
frequency.  
2  
1
6
4
9
2
VLINE  
Boundary Mode PFC inductor current and switching  
frequency vary at every switching moment. RMS inductor  
current and average switching frequency over one AC  
period can be used instead of instantaneous values.  
P
=
(
)
IL,PK  
RDS,ON  
Q,CON  
π⋅VOUT  
2  
1
6
4
9
2
85  
=
7.  
392  
(
0
.
34  
)
=
2
.23[W ]  
π⋅430  
Individual loss portions are changed according to the input  
voltage; maximum conduction loss appears at low line  
because of high input current; and maximum switching off  
loss appears at high line because of the high switching  
frequency. The resulting loss is always lower than the  
summation of the two losses calculated above.  
1
2
PQ,SWOFF  
=
VOUT I L tOFF fSW  
1
2
=
430  
2
.613  
50 ns(50 k /  
0.  
8
) =  
1.755 [W ]  
1
PQ,DISCHG  
=
(
COSS +CEXT +CPAR  
)
VO2UT fSW  
2
Capacitive discharge loss made by effective capacitance  
1
2
=
32 p4302 (50k / 0.8 ) =0.184[W ]  
shown at drain and source, which includes MOSFET COSS  
,
an externally added capacitor to reduce dv/dt and parasitic  
capacitance shown at drain pin, is also dissipated at  
MOSFET. That loss is calculated as:  
Diode average current and forwardꢀvoltage drop loss as:  
IOUT  
0.5  
IDOUT,AVE  
=
=
=0.56[ A]  
η
0.9  
1
2
P
=
(
COSS +CEXT +CPAR  
)
VO2UTfSW [W]  
(29)  
PDOUT,LOSS =VDOUT,FOR IDOUT,AVE  
= 2.1 0.56 =1.46[W ]  
Q,DISCHG  
where:  
COSS is the output capacitance of MOSFET;  
CEXT is an externally added capacitance at drain and source  
of MOSFET; and  
[STEP-7] Determine Current-Sense Resistor  
It is typical to set pulseꢀbyꢀpulse current limit level a little  
higher than the maximum inductor current calculated by  
Equation (10). For 10% margin, the currentꢀsensing resistor  
is selected as:  
CPAR is the parasitic capacitance shown at drain pin.  
Because the COSS is a function of the drain and source  
voltage, it is necessary to refer to graph data showing the  
relationship between COSS and voltage.  
VCS,LIM  
RCS  
=
[]  
(33)  
IL,PK 1.1  
Estimate the total power dissipation of MOSFET as the sum  
of three losses:  
Once resistance is calculated, its power loss at low line is  
calculated as:  
P = PQ,CON +PQ,SWOFF+PQ,DISCHG[W]  
(30)  
Q
P
RCS =IQ2,RMSRCS [W]  
(34)  
Diode voltage stress is the same as the output capacitor  
stress calculated in Equation (24).  
Power rating of the sensing resistor is recommended a twice  
the power rating calculated in Equation (34).  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
12  
ANꢀ9738  
APPLICATION NOTE  
(
VLINE  
2 RL  
)
vOUT  
vCOMP  
1
(Design Example) Maximum inductor current is 4.889A  
and sensing resistor is calculated as:  
= KSAW  
(36)  
s
4
VOUT L  
1
+
2
π f p  
VCS,LIM  
pk  
0.8  
7.392 1.1  
RCS  
=
=
= 0.098[]  
2
where  
and RL is the output load resistance in a  
f p  
=
I
1.1  
ind  
2
π⋅ RLCOUT  
given load condition.  
Choosing 0.1as RCS, power loss is calculated as:  
PRCS,LOSS = IQ2,RMSRCS 4362  
=2. 0.098 =0.58[W]  
Figure 27 and Figure 28 show the variation of the controlꢀ  
toꢀoutput transfer function for different input voltages and  
different loads. Since DC gain and crossover frequency  
increase as input voltage increases, and DC gain increases  
as load decreases, high input voltage and light load is the  
worst condition for feedback loop design.  
Recommended power rating of sensing resistor is 1.19W.  
[STEP-8] Design Compensation Network  
The boost PFC power stage can be modeled as shown in  
Figure 26 MOSFET and diode can be changed to lossꢀfree  
resistor model and then modeled as a voltageꢀcontrolled  
current source supplying RC network.  
Figure 27. Control-to-Output Transfer Function for  
Different Input Voltages  
Figure 28. Control-to-Output Transfer Function for  
Different Loads  
Figure 26. Small Signal Modeling of the Power Stage  
Proportional and integration (PI) control with highꢀ  
frequency pole is typically used for compensation, as shown  
in Figure 29. The compensation zero (fCZ) introduces phase  
boost, while the highꢀfrequency compensation pole (fCP)  
attenuates the switching ripple.  
By averaging the diode current during the half line cycle,  
the lowꢀfrequency behavior of the voltage controlled current  
source of Figure 26 is obtained as:  
2
VLINE  
2
VLINE  
L
IDOUT,AVE = KSAW  
[ A]  
(35)  
4VOUT  
The transfer function of the compensation network is  
obtained as:  
where:  
L is the boost inductance;  
VOUT is the output voltage; and  
s
1
1
+
+
vCOMP  
vOUT  
2
π
s
fI  
2
2
π fCZ  
s
=
KSAW is the internal gain of sawtooth generator (that of  
(37)  
FL7930B is 8.496×10ꢀ6).  
π fCP  
Then the lowꢀfrequency, smallꢀsignal, controlꢀtoꢀoutput  
transfer function is obtained as:  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
13  
ANꢀ9738  
APPLICATION NOTE  
2
VOUT  
.
5
115mho  
CCOMP, LF +CCOMP, HF  
Typically, high RFB1 is used to reduce power consumption  
and CFB can be added to raise the noise immunity. The  
maximum CFB currently used is several nano farads. Adding  
a capacitor at the feedback loop introduces a pole as:  
fI =  
fCZ  
fCP  
2
π⋅  
(
)
1
where  
=
=
2
2
π⋅RCOMPCCOMP, LF  
1
1
fFP  
=
2
π⋅  
(
RFB // RFB CFB  
)
CCOMP, LF CCOMP, HF  
1
2
(40)  
π⋅RCOMP  
1
CCOMP, LF +C  
[Hz]  
COMP, HF   
2
π⋅ RFB CFB  
2
If CCOMP,LF is much larger than CCOMP,HF, fI and fCP can be  
simplified as:  
RFB RFB  
1
2
where  
(
RFB // RFB  
)
=
1
2
RFB + RFB  
1
2
.
2
.
5
115mho  
π⋅CCOMP, LF  
fI  
[ Hz]  
Though RFB1 is high, pole frequency made by the  
synthesized total resistance and several nano farads is  
several kilo hertz and rarely affects controlꢀloop response  
VOUT  
2
(38)  
1
fCP  
[Hz]  
2
π⋅RCOMP CCOMP, HF  
The procedure to design the feedback loop is:  
a. Determine the crossover frequency (fC) around 1/10 ~  
1/5 of line frequency. Since the controlꢀtoꢀoutput  
transfer function of the power stage has ꢀ20dB/dec  
slope and ꢀ90o phase at the crossover frequency; it is  
required to place the zero of the compensation network  
(fCZ) around the crossover frequency so 45° phase  
margin is obtained. The capacitor CCOMP,LF is  
determined as:  
G
= 115mho  
M
KSAW  
(
VLINE  
2
)
2 2  
VOUT LCOUT  
.5 115mho  
CCOMP, LF  
[ f ]  
(41)  
2
2
(
2
π fC  
)
To place the compensation zero at the crossover  
frequency, the compensation resistor is obtained as:  
1
RCOMP  
=
[]  
(42)  
2πfC CCOMP,LF  
b. Place this compensator highꢀfrequency pole (fCP) at  
least a decade higher than fC to ensure that it does not  
interfere with the phase margin of the voltage  
regulation loop at its crossover frequency. It should also  
be sufficiently lower than the switching frequency of  
the converter for noise to be effectively attenuated. The  
capacitor CCOMP,HF is determined as:  
1
CCOMP,HF  
=
[]  
Figure 29. Compensation Network  
(43)  
2πfCP RCOMP  
The feedback resistor is chosen to scale down the output  
voltage to meet the internal reference voltage:  
RFB  
1
VOUT  
= 2.5V  
(39)  
RFB + RFB  
1
2
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
14  
ANꢀ9738  
APPLICATION NOTE  
[STEP-9] Line Filter Capacitor Selection  
(Design Example) If RFB1 is 11.7M, then RFB2 is:  
It is typical to use small bypass capacitors across the bridge  
rectifier output stage to filter the switching current ripple, as  
shown in Figure 30. Since the impedance of the line filter  
inductor at line frequency is negligible compared to the  
impedance of the capacitors, the line frequency behavior of  
the line filter stage can be modeled, as shown in Figure 30.  
Even though the bypass capacitors absorb switching ripple  
current, they also generate circulating capacitor current,  
which leads the line voltage by 90o, as shown in Figure 31.  
The circulating current through the capacitor is added to the  
load current and generates displacement between line  
voltage and current.  
2.5V  
2.5  
RFB2  
=
RFB1  
=
11.7×106 = 68kꢂ  
VOUT 2.5V  
4302.5  
Choosing the crossover frequency (control bandwidth) at  
15Hz, CCOMP,LF is obtained as:  
KSAW  
2VOUT 2 L COUT  
(
VLINE  
)
2 2.5115  
mho  
CCOMP  
,
LF  
2
(
2
π
fC  
)
6
2
6
8.496 ×10−  
24302 199 ×106 240 ×10−  
(
230  
)
2.5115×10−  
=
= 823nF  
2
6
(
2π  
15  
)
Actual CCOMP,LF is determined as 1000nF since it is the  
closest value among the offꢀtheꢀshelf capacitors. RCOMP is  
obtained as:  
The displacement angle is given by:  
2
1
1
η⋅  
(
VLINE  
)
2π⋅ fLINECEQ  
θ =tan1  
RCOMP  
=
=
=12.8kꢂ  
(44)  
2π  
fC CCOMP,LF  
2π  
15823×109  
P
OUT  
Selecting the highꢀfrequency pole as 150Hz, CCOMP,HF is  
obtained as:  
where CEQ is the equivalent capacitance that appears across  
the AC line (CEQ=CF1+CF2+CHF).  
1
1
The resultant displacement factor is:  
CCOMP,HF  
=
=
= 82nF  
2π  
fCP RCOMP  
2π  
15012.8×103  
( )  
DF=cosθ  
(45)  
These components result in a control loop with a bandwidth  
of 19.5Hz and phase margin of 45.6°. The actual bandwidth is  
a little larger than the asymptotic design.  
Since the displacement factor is related to power factor, the  
capacitors in the line filter stage should be selected  
carefully. With a given minimum displacement factor  
(DFMIN) at fullꢀload condition, the allowable effective input  
capacitance is obtained as:  
P
cos1  
(
DFMN  
)
)
 
[F]  
OUT  
CEA  
<
tan  
(
2
η⋅  
(
VLINE  
)
2π⋅ fLINE  
(46)  
One way to determine if the input capacitor is too high or  
PFC control routine has problems is to check Power Factor  
(PF) and Total Harmonic Distortion (THD). PF is the degree  
to which input energy is effectively transferred to the load  
by the multiplication of displacement factor and THD that is  
input current shape deterioration ratio. PFC control loop  
rarely has no relation to displacement factor and input  
capacitor rarely has no impact on the input current shape. If  
PF is low (high is preferable), but THD is quite good (low is  
preferable), it can be concluded that input capacitance is too  
high and PFC controller is fine.  
(Design Example) Assuming the minimum displacement  
factor at full load is 0.98, the equivalent input capacitance is  
obtained as:  
P
1
OUT  
CEA  
<
tan  
(
cos−  
(
DFMN  
)
)
2
η⋅  
(
VLINE  
)
2 πfLINE  
200  
1
<
tan  
(
cos−  
(0  
.
98  
))  
=
1.6  
F  
2
0
.
9
(277  
)
2 π50  
Thus, the sum of the capacitors on the input side should be  
smaller than 2.0ꢁF.  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
15  
ANꢀ9738  
APPLICATION NOTE  
[STEP-10] Define System Specifications  
Estimated Efficiency (Eff): The power conversion  
efficiency must be estimated to calculate the maximum  
input power with a given maximum output power. If no  
reference data is available, use Eff = 0.88~0.92 for lowꢀ  
voltage output applications and Eff = 0.92~0.96 for highꢀ  
voltage output applications. With the estimated efficiency,  
the maximum input power is given as:  
P
o
P =  
(47)  
in  
Eff  
min  
Input Voltage Range (Vin  
and Vinmax): The maximum  
input voltage would be the nominal PFC output voltage as:  
max  
Vin  
= VO.PFC  
(48)  
Even though the input voltage is regulated as constant by  
PFC preꢀregulator, it drops during the holdꢀup time. The  
minimum input voltage considering the holdꢀup time  
requirement is given as:  
Figure 30. Equivalent Circuit of Line Filter Stage  
2P THU  
min  
2
in  
V
= VO.PFC −  
(49)  
in  
CDL  
where VO.PFC is the nominal PFC output voltage, THU is a  
holdꢀup time, and CDL is the DC link bulk capacitor.  
(Design Example) Assuming the efficiency is 92%,  
P
150  
o
P =  
=
= 163W  
in  
Eff 0.92  
2P THU  
min  
2
in  
Vin = VO.PFC  
CDL  
216330×103  
240×106  
= 4302 −  
= 379V  
[STEP-11] Determine Maximum and Minimum  
Voltage Gains of the Resonant Network  
As discussed in the previous section, it is typical to operate  
the LLC resonant converter around the resonant frequency  
(fo) to minimize switching frequency variation. Since the  
input of the LLC resonant converter is supplied from PFC  
output voltage, the converter should be designed to operate  
at fo for the nominal PFC output voltage.  
θ
Figure 31. Line Current Displacement  
3.2 LLC SRC Section  
In this section, a design procedure is presented using the  
schematic in Figure 1 as a reference. An integrated  
transformer with center tap, secondary side is used and input  
is supplied from Power Factor Correction (PFC) preꢀ  
regulator. A DCꢀDC converter with 150W/103V output is  
selected as a design example. The design specifications are:  
As observed in Equation (9), the gain at fo is a function of m  
(m=Lp/Lr). The gain at fo is determined by choosing that  
value of m. While a higher peak gain can be obtained with a  
small m value, too small m value results in poor coupling of  
the transformer and deteriorates the efficiency. It is typical  
to set m to be 3~7, which results in a voltage gain of 1.1~1.2  
at the resonant frequency (fo).  
Nominal input voltage: 400VDC (output of PFC stage)  
Output: 103V/1.46A (150W)  
Holdꢀup time requirement: 30ms (50Hz line freq.)  
DC link capacitor of PFC output: 240ꢁF  
With the chosen m value, the voltage gain for the nominal  
PFC output voltage is obtained as:  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
16  
ANꢀ9738  
APPLICATION NOTE  
8
n2 Vo2  
m
M min  
=
(53)  
Rac =  
(50)  
π 2  
P
o
m 1  
@f=fo  
(Design Example)  
8n2 (Vo +VF )2 81.932 103.92  
which would be the minimum gain because the nominal  
PFC output voltage is the maximum input voltage (Vinmax).  
Rac  
=
=
= 217ꢂ  
π 2  
P
π 2 150  
o
The maximum voltage gain is given as:  
[STEP-14] Design the Resonant Network  
max  
V
M max  
=
M min  
in  
(51)  
min  
With the m value chosen in STEPꢀ11, read the proper Q  
value from the peak gain curves in Figure 33 that allows  
enough peak gain. Considering the load transient and stable  
zeroꢀvoltageꢀswitching (ZVS) operation, 10~20% margin  
should be introduced on the maximum gain when  
determining the peak gain. Once the Q value is determined,  
the resonant parameters are obtained as:  
V
in  
(Design Example) The ratio (m) between Lp and Lr is  
chosen as 5. The minimum and maximum gains are  
obtained as:  
V
m
5
min  
RO  
M
=
=
=
=1.12  
max  
1
m 1  
51  
V
in  
Cr =  
(54)  
2
2πQfo Rac  
max  
min  
Vin  
Vin  
400  
M max  
=
mmin  
=
1.12 = 1.31  
341  
1
Lr =  
(55)  
(2π  
fo )2 Cr  
Gain (M)  
Peak Gain  
(Available Maximum Gain)  
Lp = m Lr  
(56)  
1.31  
min  
Mmax  
for VIN  
(Design Example)  
As calculated in STEPꢀ11, the maximum voltage gain  
max) for the minimum input voltage (Vinmin) is 1.31. With  
15% margin, a peak gain of 1.51 is required. has been  
chosen as 5 in STEPꢀ11 and is obtained as 0.38 from the  
for  
VIN  
( VO.PFC  
max  
(
M
1.12  
Mmin  
m
)
Q
peak gain curves in Figure 33. By selecting the resonant  
frequency as 100kHz, the resonant components are  
determined as:  
m
M =  
= 1.12  
m 1  
1
1
fs  
C
=
=
=19 nF  
r
fo  
3
2
πQ f R  
2
π ⋅  
0.38  
100  
×
10  
217  
o
ac  
Figure 32. Maximum Gain / Minimum Gain  
1
1
Lr =  
=
=133 H  
9
2
(
2
πfo )2 Cr  
(
2
π×100  
×
10 3  
)
19  
×
10 −  
[STEP-12] Determine the Transformer Turns  
Ratio (n=Np/Ns)  
Lp = mLr = 665 H  
With the minimum gain (Mmin) obtained in STEPꢀ11, the  
transformer turns ratio is given as:  
max  
Np  
V
n =  
=
M min  
in  
(52)  
Ns 2(Vo +VF  
)
where VF is the secondaryꢀside rectifier diode voltage drop.  
(Design Example) assuming VF is 0.9V:  
max  
Np  
Vin  
430  
n =  
=
Mmin  
=
1.12 = 2.06  
Ns 2(VO +VF )  
2(103+ 0.9)  
[STEP-13] Calculate Equivalent Load  
Resistance  
Figure 33. Resonant Network Design Using the  
Peak Gain (Attainable Maximum Gain) Curve for m=5  
With the transformer turns ratio obtained from Equation  
(52), the equivalent load resistance is obtained as:  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
17  
ANꢀ9738  
APPLICATION NOTE  
[STEP-15] Design the Transformer  
The worst case for the transformer design is the minimum  
switching frequency condition, which occurs at the  
minimum input voltage and fullꢀload condition. To obtain  
the minimum switching frequency, plot the gain curve using  
gain Equation (8) and read the minimum switching  
frequency. The minimum number of turns for the  
transformer primaryꢀside is obtained as:  
n(Vo +VF )  
min  
Np  
=
(57)  
2 fsmin MV B A  
e
where Ae is the crossꢀsectional area of the transformer  
core in m2 and B is the maximum flux density swing in  
Tesla, as shown in Figure 34. If there is no reference data,  
use B =0.3~0.4 T.  
n (Vo+VF)/MV  
Figure 35. Gain Curve  
VRI  
1/(2fs)  
[STEP-16] Transformer Construction  
ꢀn (Vo+VF)/MV  
Parameters Lp and Lr of the transformer were determined in  
STEPꢀ14. Lp and Lr can be measured in the primary side  
with the secondaryꢀside winding open circuited and short  
circuited, respectively. Since LLC converter design requires  
a relatively large Lr, a sectional bobbin is typically used, as  
shown in Figure 36, to obtain the desired Lr value. For a  
sectional bobbin, the number of turns and winding  
configuration are the major factors determining the value of  
Lr, while the gap length of the core does not affect Lr much.  
Lp can be controlled by adjusting the gap length. Table 1.  
shows measured Lp and Lr values with different gap lengths.  
A gap length of 0.05mm obtains values for Lp and Lr closest  
to the designed parameters.  
B  
B
Figure 34. Flux Density Swing  
Choose the proper number of turns for the secondary side  
that results in primaryꢀside turns larger than Npmin as:  
min  
Np = nNs > Np  
(58)  
N p  
(Design Example) EER3542 core (Ae=107mm2) is selected  
for the transformer. From the gain curve of Figure 35, the  
minimum switching frequency is obtained as 82KHz. The  
minimum primaryꢀside turns of the transformer is given as:  
N s2  
N s1  
n(Vo +VF )  
min  
Np  
=
2 fs minB1.11Ae  
1.93×103.9  
=
= 26turns  
2×82×103 0.41.11107×106  
min  
Figure 36. Sectional Bobbin  
Choose Ns so that the resultant Np is larger than Np  
:
min  
N p = n Ns =1.93×14 = 27 < N p  
Table 1. Measured Lp and Lr with Different Gap  
Lengths  
min  
N p = n Ns =1.93×15 = 29 < N p  
Gap Length  
Lp  
Lr  
min  
N p = n Ns =1.93×16 = 31> N p  
0.0mm  
0.05mm  
0.10mm  
0.15mm  
0.20mm  
0.25mm  
2,295ꢁH  
943ꢁH  
630ꢁH  
488ꢁH  
419ꢁH  
366ꢁH  
123ꢁH  
122ꢁH  
min  
N p = n Ns =1.93×17 = 33 > N p  
min  
N p = n Ns =1.93×18 = 35 > N p  
118ꢁH  
min  
N p = n Ns =1.93×19 = 37 > N p  
117ꢁH  
115ꢁH  
114ꢁH  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
18  
ANꢀ9738  
APPLICATION NOTE  
The nominal voltage of the resonant capacitor in normal  
operation is given as:  
(Design Example)  
Final Resonant Network Design  
max  
RMS  
V
2 ICr  
2π fo Cr  
nom  
in  
Even though the integrated transformer approach in LLC  
resonant converter design can implement the magnetic  
components in a single core and save one magnetic  
component, the value of Lr is not easy to control in real  
transformer design. Resonant network design sometimes  
requires iteration with a resultant Lr value after the  
transformer is built. The resonant capacitor value is also  
changed since it should be selected among offꢀtheꢀshelf  
capacitors. The final resonant network design is summarized  
in Table 2. and the new gain curves are shown in Figure 37.  
VC  
+
(60)  
r
2
However, the resonant capacitor voltage increases higher  
than this at overload condition or load transient. Actual  
capacitor selection should be based on the OverꢀCurrent  
Protection (OCP) trip point. With the OCP current, IOCP, the  
maximum resonant capacitor voltage is obtained as:  
max  
V
IOCP  
2π fo Cr  
nom  
in  
VC  
+
(61)  
r
2
Table 2. Final Resonant Network Design Parameters  
Parameters  
Initial Design  
Final Design  
(Design Example)  
Lp  
Lr  
665µH  
133H  
19nF  
100kHz  
5
691µH  
122µH  
22nF  
96kHz  
5
π
IO  
n(Vo +VF )  
4 2 foMv (Lp Lr )  
1
RMS  
2
IC  
[
]2 +[  
]
r
Eff  
2 2n  
Cr  
1
π
1.4  
1.93(103  
3
+
0.9)  
500  
2
2
fo  
=
[
]
+
[
]
×10  
6
0.92  
2 2 1.93  
4 2  
96  
×
10  
1.12  
m
=1.12A  
Q
0.38  
0.3  
M at fo  
1.12  
1.12  
The peak current in the primary side in normal operation is:  
peak  
rms  
Minimum  
Frequency  
IC  
= 2 IC  
=1.58A  
75kHz  
74.4kHz  
r
r
peak  
OCP level is set to 2.5A with 50% margin on ICr  
:
RMS  
max  
2
IC  
r
Vin  
nom  
VC  
+
r
2
2 π fo Cr  
430  
2
2 1.18  
=
+
= 340V  
2⋅  
π
96×103 22×109  
max  
Vin  
IOCP  
π fo Cr  
max  
VC  
+
r
2
2⋅  
2.5  
π
96×103 22×109  
430  
2
=
+
= 403.3V  
2⋅  
A 630V rated lowꢀESR film capacitor is selected for the  
resonant capacitor.  
[STEP-18] Rectifier Network Design  
When the center tap winding is used in the transformer  
secondary side, the diode voltage stress is twice of the  
output voltage expressed as:  
Figure 37. Gain Curve of the Final Resonant  
Network Design  
[STEP-17] Select the Resonant Capacitor  
VD = 2(Vo + VF )  
(62)  
When choosing the resonant capacitor, the current rating  
should be considered because a considerable amount of  
current flows through the capacitor. The RMS current  
through the resonant capacitor is given as:  
The RMS value of the current flowing through each rectifier  
diode is given as:  
π
4
RMS  
ID  
=
Io  
(63)  
1
π
2 2n  
Io  
n(Vo +VF )  
4 2 foMV (Lp Lr )  
RMS  
2
IC  
[
]2 +[  
]
(59)  
r
Eff  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
19  
ANꢀ9738  
APPLICATION NOTE  
Meanwhile, the ripple current flowing through output  
capacitor is given as:  
π
2 2  
Io  
π
2 8  
8
RMS  
2
ICo  
= (  
)2 Io  
=
Io  
(64)  
The voltage ripple of the output capacitor is:  
π
2
Vo = Io RC  
(65)  
where RC is the effective series resistance (ESR) of the  
output capacitor and the power dissipation is the output  
capacitor is:  
P
= (ICoRMS )2 RC  
(66)  
Loss.Co  
(Design Example) The voltage stress and current stress of  
the rectifier diode are:  
Figure 38. Typical Circuit Configuration for RT Pin  
Softꢀstart prevents excessive inrush current and overshoot of  
output voltage during startup, increases the voltage gain of  
the resonant converter progressively. Since the voltage gain  
of the resonant converter is reversely proportional to the  
switching frequency, softꢀstart is implemented by sweeping  
down the switching frequency from an initial high  
frequency (f ISS) until the output voltage is established, as  
illustrated in Figure 39. The softꢀstart circuit is made by  
connecting RC series network on the RT pin as shown in  
Figure 38. FAN7621S also has an internal softꢀstart for 3ms  
to reduce the current overshoot during the initial cycles,  
which adds 40KHz to the initial frequency of the external  
softꢀstart circuit, as shown in Figure 39. The actual initial  
frequency of the softꢀstart is given as:  
VD = 2(Vo +VF ) = 2(103+0.9) = 207.8V  
π
4
RMS  
ID  
=
Io =1.14A  
The 600V/8A ultraꢀfast recovery diode is selected for the  
rectifier, considering the voltage overshoot caused by the  
stray inductance.  
The RMS current of the output capacitor is:  
π
2 8  
8
π
Io  
RMS  
2
IC  
=
(
)2 Io  
=
Io = 0.584A  
o
2 2  
When two electrolytic capacitors with ESR of 100mare  
used in parallel, the output voltage ripple is given as:  
π
2
π
2
0.1  
Vo = Io RC = ⋅1.46( ) = 0.114V  
2
5.2k5.2kꢂ  
f ISS = (  
+
)×100+ 40 (kHz)  
The loss in electrolytic capacitors is:  
(69)  
P
= (IC RMS )2 RC = 0.5842 0.05 = 0.017W  
Rmin  
RSS  
Loss,Co  
o
It is typical to set the initial frequency of softꢀstart (f ISS) at  
2~3 times of the resonant frequency (fo).  
The softꢀstart time is determined by the RC time constant:  
[STEP-19] Control Circuit Configuration  
tSS  
= 3 ~ 4( RSS CSS )  
(70)  
Figure 38 shows the typical circuit configuration for the RT  
pin of FAN7621S, where the optoꢀcoupler transistor is  
connected to the RT pin to control the switching frequency.  
The minimum switching frequency occurs when the optoꢀ  
coupler transistor is fully tuned off, which is given as:  
5.2kꢂ  
Rmin  
fmin  
=
×100(kHz)  
(67)  
Assuming the saturation voltage of optoꢀcoupler transistor is  
0.2V, the maximum switching frequency is determined as:  
5.2k4.68kꢂ  
fmax = (  
+
)×100(kHz)  
(68)  
Rmin  
Rmax  
Figure 39. Frequency Sweep of the Soft-Start  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
20  
ANꢀ9738  
APPLICATION NOTE  
(Design Example) The minimum frequency is 75kHz in  
(Design Example) Since the OCP level is determined as  
STEPꢀ15. Rmin is determined as:  
2.5A in STEPꢀ17 and the OCP threshold voltage is ꢀ0.6V, a  
sensing resistor of 0.24  
set to 100ns (1/100 of switching period) with 1k  
and 100pF capacitor.  
is used. The RC time constant is  
100KHz  
Rmin  
=
× 5.2Kꢂ = 6.93Kꢂ  
resistor  
fmin  
Considering the output voltage overshoot during transient  
(10%) and the controllability of the feedback loop, the  
maximum frequency is set as 140kHz. Rmax is determined as:  
[STEP-21] Voltage and Current Feedback  
Power supplies for LED lighting must be controlled by  
Constant Current (CC) Mode as well as a Constant Voltage  
(CV) Mode. Because the forwardꢀvoltage drop of LED  
varies with the junction temperature and the current also  
increases greatly consequently, devices can be damaged.  
4.68Kꢂ  
Rmax  
=
fo ×1.40  
100KHz  
5.2Kꢂ  
Rmin  
(
)
4.68Kꢂ  
96KHz ×1.40 5.2Kꢂ  
=
= 7.88Kꢂ  
(
)
Figure 42 shows an example of a CC and CV Mode  
feedback circuit for singleꢀoutput LED power supply.  
During normal operation, CC Mode is dominant and the CV  
control circuit does not activate as long as the feedback  
voltage is lower than reference voltage, which means that  
CV control circuit only acts as OVP for abnormal modes.  
100KHz  
6.93Kꢂ  
Setting the initial frequency of softꢀstart as 250kHz (2.5  
times of the resonant frequency), the softꢀstart resistor RSS is  
given as:  
5.2Kꢂ  
RSS  
=
fISS 40KHz  
100KHz  
5.2Kꢂ  
Rmin  
(
)
(Design Example) The output voltage (VO) is 103V in  
design target. VO is determined as:  
5.2Kꢂ  
=
= 3.85Kꢂ  
250KHz 40KHz 5.2Kꢂ  
RFU  
(
)
Vo = 2.5(1+  
)
100KHz  
6.93Kꢂ  
RFL  
Set the upperꢀside feedback resistance (RFU) as 330K  
is determined as:  
. RFL  
[STEP-20] Current Sensing and Protection  
FAN7621S senses lowꢀside MOSFET drain current as a  
negative voltage, as shown in Figure 40. and Figure 41.  
Halfꢀwave sensing allows low power dissipation in the  
sensing resistor, while fullꢀwave sensing has less switching  
noise in the sensing signal. Typically, an RC lowꢀpass filter  
is used to filter out the switching noise in the sensing signal.  
The RC time constant of the lowꢀpass filter should be  
1/100~1/20 of the switching period.  
2.5× RFU 2.5×330Kꢂ  
RFL  
=
=
= 8.2Kꢂ  
(Vo 2.5)  
(103 2.5)  
The output current (ILED) is 1.46A in design target.  
Assuming the sensing resistor (RSENSE) of 0.1 and  
feedback resistor (R202) of 47K  
resistor R203 is determined as:  
are used, the input  
VSENSE × R202  
(
RSENSE × ILED )× R202  
R
203  
=
=
0.36  
0.36  
(0.1×1.46)×47Kꢂ  
=
=19Kꢂ  
0.36  
Figure 40. Half-Wave Sensing  
Figure 42. Example of CC and CV Feedback Circuit  
Figure 41. Full-Wave Sensing  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
21  
ANꢀ9738  
APPLICATION NOTE  
4. Schematic of the Evaluation Board  
G P . 6 1  
G S . 0 1  
FAN7621S  
c c V L . 2 1  
1
3
2
1
3
5
4
0 1  
8
9
7
6
1
2
CS19  
220nF  
RS33  
47k  
J6  
4
VLED  
ISENSE  
VAUX  
VFB  
1
2
3
4
5
6
7
8
Vꢀ  
LM358/ON  
2
1
OUT  
8
RS35  
13k  
3
+
V+  
U6A  
9
10  
11  
12  
DS2  
LL4148  
RS42  
RS44  
R46  
0.1  
CS6  
33uF/25V  
RS40  
100k  
RS41  
4.7k  
RS49  
1k  
N.C  
N.C  
CON12  
U7  
TL431  
RS55  
120k  
DS3  
LL4148  
RS57  
330k  
CS25  
220nF  
RS56  
47k  
4
Vꢀ  
LM358/ON  
6
7
OUT  
5
+
8
V+  
U6B  
RS59  
8.2k  
VAUX  
Figure 43. Evaluation Board Schematic  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
22  
ANꢀ9738  
APPLICATION NOTE  
Dimensions: 240 (W) × 80 (H) [mm]  
Figure 44. Top View of Evaluation Board  
Figure 45. Bottom View of Evaluation Board  
5. Bill of Materials  
Item No.  
Qty  
Reference  
Part Reference  
Description (Manufacturer)  
1
2
1
1
1
5
3
1
1
2
1
2
1
1
1
1
1
6
2
BD1  
600V/8A  
3PIN  
Bridge Diode (Fairchild Semiconductor)  
Connector  
CN1  
3
CP1  
630V22nF  
33µF/25V  
120µF/450V  
680p/25V  
0.1µF/25V  
1µF/25V  
Film Capacitor  
4
CP2,CP6,CP13,CP21  
SMD Tantal Capacitor  
Electrolytic Capacitor  
SMD Capacitor 2012  
SMD Capacitor 2012  
SMD Capacitor 2012  
SMD Capacitor 2012  
SMD Capacitor 2012  
Electrolytic Capacitor  
SMD Capacitor 2012  
SMD Capacitor 2012  
Film Capacitor  
5
CP4,CP5,CP8  
6
CP7  
7
CP9  
CP10,CP14  
CP11  
8
9
470pF/25V  
33µF/25V  
10µF/16V  
12nF/25V  
100pF/26V  
0.68µF/630V  
100p/25V  
47µF/200V  
470nF/400V  
220nF/25V  
10  
11  
12  
13  
14  
15  
16  
17  
CP15,CP16  
CP17  
CP18  
CP19  
CP20  
CP22  
SMD Capacitor 2012  
Electrolytic Capacitor  
Film Capacitor  
CS1,CS2,CS5,CS6,CS7,CS8  
CS3,CS4  
CS19,CS25  
SMD Capacitor 2012  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
23  
ANꢀ9738  
APPLICATION NOTE  
Item No.  
Qty  
Reference  
Part Reference  
Description (Manufacturer)  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
2
3
1
1
1
4
5
2
1
2
1
2
1
2
1
3
4
1
5
6
1
2
5
CS9,CS10  
220p/400V  
220nF/400V  
100nF/50V  
4.7µF/400V  
600V/8A  
Ceramic Capacitor  
Film Capacitor  
CS11  
C1  
SMD Capacitor 3216  
Ceramic Capacitor  
Hyperfast2 Diode  
Fast Rectifier Diode  
SMD General Purpose Diode  
UltraꢀFast Diode  
Fuse  
C2  
DP1  
DS1,DP2,DP3,DP5  
1000V/1A  
100V/200mA  
600V/20A  
FS101  
DS2,DS3,DP4,DP6,DP7  
D1,D2  
F1  
J1,J6  
12PIN  
Connector  
J2  
LF1,LF2  
2PIN  
Connector  
10mH/2.3A  
650V/11A  
600V/7A  
CommonꢀMode Filter  
MOSFET  
M1  
M2,M3  
MOSFET  
PC1  
Photo Copuler  
40V/1A  
Photo Coupler  
Q1,Q3,Q4  
Q2,U3,U4,U5  
RP1  
SMD NPN Transitor  
SMD PNP Transitor  
SMD Resistor 2012  
SMD Resistor 3216  
SMD Resistor 3216  
Watt Resistor  
40V/200mA  
390kꢂ/25V  
1M/ꢂ50V  
4.3Mꢂ/50V  
68Kꢂ/2W  
0ꢂ/50V  
RS1,RS2,RP2,RS3,RP9  
RP3,RP4,RP13,RP14,RP20,RP21  
RP5  
RP6,RP7  
RP8,RP11  
RP30,RP32,RP36  
RP10,RP26  
RP12  
SMD Resistor 3216  
SMD Resistor 2012  
SMD Resistor 3216  
SMD Resistor 2012  
SMD Resistor 3216  
SMD Resistor 2012  
SMD Resistor 2012  
SMD Resistor 3216  
SMD Resistor 2012  
SMD Resistor 2012  
SMD Resistor 2012  
SMD Resistor 2012  
SMD Resistor 2012  
SMD Resistor 2012  
SMD Resistor 2012  
SMD Resistor 3216  
Watt Resistor  
10kꢂ/25V  
10kꢂ/50V  
33kꢂ/25V  
24kꢂ/50V  
47kꢂ/25V  
2.7ꢂ/25V  
10ꢂ/50V  
41  
42  
43  
44  
45  
2
1
3
1
4
RP15,RS33,RS56  
RP16  
RP17,RP19  
RP22,RP34  
RP18  
10ꢂ/25V  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
1
1
2
1
1
2
2
1
2
1
1
1
1
1
4.7ꢂ/25V  
10kꢂ/25V  
8.2kꢂ/25V  
1.8Kꢂ/25V  
5.1kꢂ/25V  
3ꢂ/25V  
RP23  
RP24,RS59  
RP25  
RP27  
RP28,RP35  
RP29,RP31  
RP33  
75kꢂ/50V  
0.1ꢂ/5W  
RP37,RS49  
RP38A  
1kꢂ/50V  
SMD Resistor 3216  
Watt Resistor  
0.1ꢂ/1W  
RS35  
13kꢂ/25V  
100kꢂ/25V  
4.7kꢂ/25V  
0.1ꢂ/2W  
SMD Resistor 2012  
SMD Resistor 2012  
SMD Resistor 2013  
Watt Resistor  
RS40  
RS41  
RS42  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
24  
ANꢀ9738  
APPLICATION NOTE  
Item No.  
Qty  
Reference  
Part Reference  
Description (Manufacturer)  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
2
1
1
1
1
1
1
1
1
2
1
1
RS44,R46  
RS55  
RS57  
TM1  
NC  
NC  
120kꢂ/25V  
330kꢂ/25V  
EER3019Nꢀ10  
EER3543ꢀ16  
FL7930B  
SMD Resistor 2012  
SMD Resistor 2012  
PFC Inductor  
TM2  
LLC Transformer  
CRM PFC Controller  
LLC Resonant Controller  
OPꢀAMP  
U1  
U2  
FAN7621S  
LM358  
U6  
U7  
KA431  
Shunt Regulator  
Zener Diode 18V  
Zener Diode 6.8V  
Varistor 470V  
ZDP1,ZDP3  
ZDP2  
ZNR1  
MMSZ5248  
MMSZ5235  
10D471  
Related Datasheets  
FL7930B — SingleꢀStage Flyback and Boundary Mode PFC Controller for Lighting  
FAN7621S — Controller for Resonant Half Bridge  
FDPF17N60NT — 600V NꢀChannel MOSFET, UniFET™2  
FDPF7N60NZ — 600V NꢀChannel MOSFET, UniFET™2  
Author  
WonSeok, Kang  
Power Conversion Korea  
Senior System and Application Engineer  
Wonseok.kang@fairchildsemi.com  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE  
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS  
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS  
WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b)  
support or sustain life, or (c) whose failure to perform when  
properly used in accordance with instructions for use provided  
in the labeling, can be reasonably expected to result in  
significant injury to the user.  
2. A critical component is any component of a life support device  
or system whose failure to perform can be reasonably  
expected to cause the failure of the life support device or  
system, or to affect its safety or effectiveness.  
© 2011 Fairchild Semiconductor Corporation  
Rev. 1.0.0 • 4/20/11  
www.fairchildsemi.com  
25  

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